POWER SEMICONDUCTOR

DEVICES AND CIRCUITS

Asea Brown Boveri Symposia

1991 Power Semiconductor Devices and Circuits Edited by Andre A. Jaecklin

Brown Boveri Symposia previously published:

1969 Flow Research on Blading, Edited by L. S. Dzung

1971 Real-Time Control of Electric Power Systems, Edited by E. Handschin

1973 High-Temperature Materials in Gas Turbines, Edited by P. R. Sahm and M. O. Speidel

1975 Nonemissive Electrooptic Displays, Edited by A. R. Kmetz and F. K. von Willisen

1977 Current Interruption in High-Voltage Networks, Edited by K. Raga/ler

1979 Surges in High-Voltage Networks, Edited by K. Ragaller

1981 Semiconductor Devices for Power Conditioning, Edited by R. Sittig and P. Roggwiller

1983 Corrosion in Power Generating Equipment, Edited by M. O. Speidel and A. Atrens

1985 Computer Systems for Process Control, Edited by Reinhold Giith

1987 Process Technologies for Water Treatment, Edited by Samuel Stucki

POWER SEMICONDUCTOR

DEVICES AND CIRCUITS

Edited by

Andre A. Jaecklin Asea Brown Boveri Corporate Research

Baden, Switzerland

SPRINGER SCIENCE+BUSINESS MEDIA, LLC

L1brary of Congress Catalog1ng-1n-Pub11cat1on Data

Power semiconductor devices and Clrcults I edited by Andre A. Jaeck 1 in.

p. cm. -- (Asea Brown Boveri symposia seriesl "Proceedlngs of an International Symposium on Power Semiconductor

Devices and Circuits, held September 26-27,1991, in Baden-Dattwl1, Switzerland"--T.p. verso.

Includes bibl iographical references and index. ISBN 978-1-4613-6463-4 ISBN 978-1-4615-3322-1 (eBook) DOI 10.1007/978-1-4615-3322-1 1. Power semlconductors--Congresses. 2. Electronic apparatus and

appliances--Power supply--Congresses. 1. Jaecklin, Andre A. II. International Symposium on Power Semiconductor Devices and C1rcuits (1991 Baden, SWitzerland, and Dattw1l, Switzerlandl III. Series. TK7871.85.P667 1992 621.317--dc20 92-42064

CIP

Proceedings of an International Symposium on Power Semiconductor Devices and Circuits, held September 26-27, 1991, in Baden-Dăttwil, Switzerland

ISBN 978-1-4613-6463-4

© 1992 Springer Science+Business Media New York Originally published by Plenum Press, New York in 1992

Softcover reprint of the hardcover lst edition 1992

AlI rights reserved

No part of this book may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming,

recording, or otherwise, without written permission from the Publisher

FOREWORD

This symposium was the sCientific-technical event of the centennial celebration of the Asea Brown Boveri Switzerland. The purpose was to assess the present state of the art as well as shaping the basis for future progress in the area of power devices and related power circuits.

The merger of Brown Boveri (BBC) with Asea to Asea Brown Boveri (ABB) three years ago gave new stimulus and enriched the technical substance of the symposium. By 1991, 100 years after the formation of BBC in Switzerland as a single company, this organization has been decentralized, forming 35 independent ABB companies. One of them -ABB Semiconductors Ltd. - directly deals with the power semiconductor business. These significant changes reflect the changes in the market place: increased competition and higher customer expectations have to be fulfilled.

In line with the core business activities of ABB and with the concept of sustainable development, it is natural for ABB to be active in the area of power devices and circuits. Increased awareness towards energy conservation is one of the main drives for these activities. User friendliness is another drive: integration of intelligent functions, e.g. protection and/or increased direct computer interfacing of the power circuits. Therefore, also the R&D activities related to the subject of thIs symposium will in the future be characterized by an even stronger coupling with the market needs. For the members of the R&D Laboratories this means improved customer partnership beyond operational excellence.

The symposium has been attended by 107 partIcIpants from 11 countries. It was a great pleasure to welcome leading scientist from many prominent institutions from allover the world as well as competent speCialists in the field of ABB, thus providing a unique opportunity for high level discussions.

We express our sincere thanks to: • the authors, who made major contributions to the success of this

symposium and also for their effort reflected in the excellent papers contained in this volume.

• to all the other participants for their contributions to lively discussions.

• to the collaborators of ETH Zurich, Professor H. Baltes and especially to the Vice PreSident for Research, Professor R. Hutter, for hIs collaboration and contrIbutions to the success of this symposium.

v

FOREWORD vi

• to Dr. A. Jaecklin and Dr. J. Gobrecht from ABB Corporate Research Switzerland, for their careful layout of the scientific program.

We also would like to recognize the special efforts of Mr. H. P. Kaufmann and his staff of ABB Corporate Research Switzerland for the smooth running of the administrative side of this meeting.

Maurice Campagna Director of ABB Corp. Research Switzerland

PREFACE

The subjects of power semiconductor devices and the circuits associated with them have had an impact going far beyond the significance of the hardware itself. Their influence is ubiquitous and involves many facets like a steady supply of undistorted electrical power and efficient, pollution-free public transportation. Our way of life has been penetrated so deeply that their impact goes unnoticed in most cases.

Twenty years ago, the activity "Power Semiconductor Devices" has been started within this Research Center. Exactly ten years ago, a similar Symposium has taken place, entitled "Semiconductor Devices for Power Conditioning". Looking back at this event reveils a tremendous amount of progress made in ten years :

- Conventional thyristors with very high switching power have been an issue at that time. By now, these devices have attained a rather mature state, and in various areas they are even gradually being replaced.

- The very first high power Gate Turn-Off thyristors (GTO) were just emerging from the laboratory, and they were not yet available to the general public. In the meantime, almost all high power applications are dominated by turn-off devices which has meant a significant step toward the utopia of an ideal switch. The consequence was that such a switch, combining turn-on and tum-off in a single unit, has triggered almost a revolution in applications of power electroniCS. For the first time, concepts like the inverter driven locomotive became attractive solutions, both technically and economically.

- One of the most important facts is probably that, in 1981, people were at best dreaming to combine bipolar devices with field effect control, but there was no viable proposal how to achieve that. In the meantime, such elements have grown to be a class by itself. Already, devices like the Insulated Gate Bipolar Transistor (IGBT) have found their way to the marketplace. On the other hand, there is the MOS-Controlled Thyristor (MCT) which - on a small scale still - exhibits a very promising behaviour in the laboratory. This subject is one of the important topiCS in the present context. The belief is that, again, we may be at the verge of new revolution of power electronics with a significant impact in the foreseeable future.

The evolution of semiconductor devices has acted as a promoter of new solutions for power electronics and for the associated applications in the past. We expect them to continue being a most valuable source of

vii

viii PREFACE

innovations. Hence, the goal of this Symposium was to assess the future potential of this field, based on the present state of the art of both power semiconductor devices and the circuits associated with them.

We had the pleasure to welcome some of the most prominent leading scientists and engineers in these fields who have presented their view and who were ready to discuss freely about the future trends expected.

Taking into account the increasing interaction between power semiconductor device concepts, their realization, and their circuit applications, the Symposium has been split into four subject areas:

The first part, entitled Modern Power Devices, starts with an illustration of the increasing need to apply Very Large Scale Integration (VLSI) technology to power devices. Subsequently, device concepts including turn-off are presented and discussed. The most radical one for high power applications, the MOS-controlled thyristor, is expected to have a very high potential.

The subject Simulation has been treated separately because advanced software tools are presently available which can give a very essential support for the realization of the final devices, thus helping to reduce the costly technological effort or to predict critical device phenomena.

In the context of Circuits and Control Concepts, the interactions between turn -off devices and converters in general and more specifically between optically fired thyristors and their applications are conSidered. On the low end of the power rating, this includes the integration of the control circuit on the power device.

The chapter Future Trends attempts to give an outlook on recent developments in the field of power electronics on the one hand and on hybrid integration of circuits and devices as well as on the potential of future semiconductor materials on the other hand.

An edited, slightly shortened version of the discussions following each individual paper has been added to the text.

It is a pleasure to thank all the authors for their enthusiastic participation at the Symposium and especially for the careful preparation of their contributions. The high quality of their work is reflected in this volume. Additional thanks go to the four session chairman for their competent gUiding, mainly through the discussions.

The efforts of Dr. R. W. Meier who has paved the way and secured the support needed and of Dr. J. Gobrecht who has assisted in setting up the program are gratefully acknowledged. Mrs. B. Saring and Mrs. M. Gerber were responsible for the extensive secretarial work. Sincere thanks are expressed them - as well as to many other individuals - who have helped to make this Symposium a successful event.

A. A. Jaecklin Editor

CONTENTS

PARTICIPANTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. xi

MODERN POWER DEVICES

TECHNOWGY FOR HIGH-POWER DEVICES ..................... 1 T.Ohmi

THE MOS CON1ROLLED THYRISTOR AND ITS LIMITS ............. 31 F. Bauer

HIGH-POWER REVERSE CONDUCTING GTO .................... 63 P. Streit

REVIEW OF POWER DEVICES CONCEPTS ...................... 83 R. Sittig

SIMULATION

TOOL INTEGRATION FOR POWER DEVICE MODELING INCLUDING 3D ASPECTS. . . . . . . . . . . . . . . . . . . . . . . . . . .. III

R.W. Dutton and J.D. Plummer

THE USE OF CAD TOOLS IN POWER DEVICE OPTIMIZATION W. Fichtner. J. Burgler. H. Dettmer. N. Hitschfeld.

K. Kells. H. Lendenmann. S. Muller. and M. Westermann

139

MODELING THE LIMIT OF STABLE DEVICE BEHAVIOUR. . . . . . . . .. 161 K. Lilja

CIRCUITS AND CONTROL CONCEPTS

COMPARATIVE STUDY OF HIGH POWER DEVICES IN CONVERTER CIRCUITS . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 197

H.-Ch. Skudelny. A. Mertens. and J.-G. Langer

ix

x CONTENTS

HVDC VALVES WITH LIGlIT-TRIGGERED 1HYRISTORS ........... 239 B.E. Danielsson

INTELLIGENT POWER INTEGRATED CIRCUITS ................. 271 J.-M. Peter

FUTURE TRENDS

RESONANT LINKS; A NEW FAMILY OF CONVERTER TOPOLOGIES FOR SOLID STATE POWER CONVERSION ............... 291

T.A. Lipo and D.M. Divan

ADVANCED POWER MODULES FOR DRIVES AND AUTOMATION .................................... 317

H.-J. Krokoszinski and S. Kjellnas

APPLICATION OF HIGH POWER ELECTRONICS IN ELECTRICAL POWER TRANSMISSION SYSTEMS. . . . . . . . . . . . . . . . . . . . . 351

A. Ekstrom

NEW MATERIALS BEYOND SILICON FOR POWER DEVICES. . . . . . .. 377 B.J. Baliga

INDEX ................................................ 391

PARTICIPANTS

Dr. C. Abbas Prof. Dr. L. Abraham Mr. G. Anzalone Dr. H. Asal

Dr. B. Astrand Dr. M. Bakowski Prof. Dr. B.J. Ballga Prof. Dr. H. Baltes Dr. F. Bauer Dr. R. Bayerer Mr. J.O. Boeriis Mr. W.U. Bohll Dr. F. Bonzanigo Dr. P. Bordignon

Mr. H.J. Bossi Mr. H. Braunsdorfer Dr. B. Breitholz Mr. K. Brisby Prof. Dr. M. Campagna Mr. M. Ciappa Dr. G. Corbett Mr. S. Corsi

Mr. G. Crawshaw Dr. B. Danielsson Prof. Dr. N. de Rooij

Prof. Dr. R. Dutton Prof. Dr. A. Ekstr6m Mr. P. Etter Prof. Dr. W. Fichtner Dr. K. Funk Prof. Dr. W. Gerlach Dr. J. Gobrecht Dr. H. Griining Dr. G. Giith

Institut fUr Kommunikationstechnik. CH-8092 Zurich

Universitat der Bundeswehr Munchen. D-8014 Neubiberg

Ministero Difeso Marina. 1-00100 Roma Elektrizitats-Gesellschaft Laufenburg AG. CH-4335 Laufenburg

ABB HAFO AB. S-175 26 J analla Swedish Institute of Microelectronics. S-16421 Kista

North Carolina State University. Raleigh NC 27 695. USA ETII Zurich. CH-8093 Zurich

ABB Semiconductor AG. CH-5405 Dattwi1

ABB IXYS. D-6840 Lampertheim

ABB Semiconductor AB. CH-5600 Lenzburg

ABB Transportation AG. CH -8050 Zurich

ETII Zurich. CH-8092 Zurich Ansaldo Industria SpA. Power Electronics and Motor Division. 1-20 126 Milano ABB Drives AG. CH-5300 Turgi

Wiener Stadtwerke/Elektrizitatswerke. A-1095 Wien

ABB Corp. Research. S-721 78 Vasteras

ABB Semiconductor AG. CH-5600 Lenzburg

ABB Corporate Research. CH-5405 Dattwil ETII Zurich. CH-8092 ZUrich

ABB Industri SpA. 1-20099 Sesto S.Giovanni ENEL Centro di ricerca di automatic. 1-20093 Cologno Monzese/Milan Brush Traction Ld .. UK-Loughborough LEll ILJ ABB Power Systms AB. S-771 01 Ludvika IMT Institute de Microtechnique de I'Universite. CH-2007 Neuchatel Stanford Univerity. USA-Stanford. CA 94315

Royal Institute Techn. Stockholm. S-IO 044 Stockholm

ABB Transportation. CH-5300 Turgi ETH Zurich. CH-8092 Zurich

TAG Semiconductors Ltd .• CH-8048 Zurich

TV Berlin. D-lOoo Berlin 12

ABB Corporate Research. CH-5405 D1I.ttwil

ABB Corp. Research. CH-5405 D1I.ttwll

ABB Power Systems AG. CH-5405 D1I.ttwil

xi

xii

Mr. L. Halbo Mr. D. Halvorsen Dr. M. Hiusler Mr. Ch. Hauswirth Dr. M. Held Mr. J. Holm

Prof. Dr. R. HUtter Dr. A.A. JaeckHn Mr. C.M. Johnson Dr. B.K. Krokoszlnskl

Mr. J. Langer Mr. K. LnJa Prof. Dr. T.P. Lipo Dr. R.W. Meier Prof. Dr. A. Menth Mr. A. Mertens Mr. D. Metzner

Dr. G. Moraw Dr. J. Naumann Mr. A. Nnarp Prof. Dr. T. Ohml Dr. C. Ovr~n Dr. P.R. Palmer Mr. J.M. Peter Dr. P. Pfluger

Dr. E. Ramezanl Mr. V. Roblbero Dr. P. Roggwiller Mr. W. Roos Dr. M. Rosslnelll Dr. B. RUegg Dr. A. RUegg Mr. Ch. Ruetsch Mr. I. Ruohonen Dr. T. Salo Mr. R. Schifer Dr. S. Schafir Mr. H. Schelbengraf Dr. B.J. Schtitzau Dr. F. Schwab Mr. T. Seger Mr. M. Serlzawa

PARTIOPANTS

ABB Corpomte Research. N-1360 Nesbru ABB Sigma Elektroteknisk A/S. N-1540 Vestby ABB Power Systems AG. CH-5405 Diittw1l ABB Drives AG. CH-53oo Turgi ETH Zurich. CH-8092 Zurich ABB Transportation Management & Systems Development GmbH. D-68 Mannheim I ETH Zurich. CH-8092 Zurich ABB Corporate Research. CH-5405 Diittw1l University of Cambridge. UK-Cambridge CB2 I PZ Asea Brown Boveri AG/ Corp. Research Center. D-6900 Heidelberg Rhein.Westf. Technische Hochschule. D-51oo Aachen ABB Semiconductor AG. CH-5405 Diittw1l Wisconsin University. USA-Madison WI ABB Corpomte Research. CH-5405 Diittwi1 Oerlikon Buhrle AG. CH-8021 Zurich Rhein.Westf. Techn1sche Hochschule. D-5100 Aachen Institute of Electrical Drives. Technical University MUnich. D-8000 Munchen 2 Osterr. Elektrizitlitswirischafts AG. A-IOIO Wien ABB IXYS. D-6840 Lampertheim ABB Semiconductors AG. CH-5600 Lenzburg Tohoku University. Sendai. Japan ABB HAFO AB. S-175 26 JiirfiUla University of Cambridge. Cambridge CB2 1 PZ. UK SGS Thomson Microelectronics. F-13 106 Rousset CSEM Centre Suisse d'Electronique et de Microtechnique SA, CH-2oo7 NeucM.tel ABB Semiconductor AG. CH-5600 Lenzburg Schindler Aufzuge AG. CH-6030 Ebikon ABB Semiconductor AG. CH-5405 Dllttw1l ABB Asea Brown Boveri Ltd. CH-MOl Baden ABB Semiconductor AG. CH-5600 Lenzburg Faselec AG. CH-8045 Zurich ABB Semiconductor AG. CH-5600 Lenzburg ABB Drives AG. CH-53oo Turgi ABB Drives-Antriebe GmbH. D-68oo Mannheim I ABB StrOmberg Research Center. SF-65101 Vaasa

ABB Kraftwerke AG. CH-5401 Baden

Schindler Aufzuge AG. CH-6030 Ebikon

ABB Transportation AG. CH-53oo Turgi Aarg. Elektrizitlitswerke, CH-5OO1 Aarau Aare - Tessin AG, CH-4601 OIten

ABB Transportation AG. CH-5300 Turgi Tohoku University /Mitsubishi International GmbH, D-4ooo Dusseldorf 30

P ARTIOPANTS

Mr. J. Setchell Dr. D. Sigurd Prof. Dr. A. SHard Prof. Dr. D. Silber Prof. Dr. R. Sittig

Prof. Dr. H. Skudelny

Mr. C. Spikings

Prof. Dr. A. Steimel Dr. P. Steimer Prof. Dr. H. Stemmler Dr. T. Stockmeier Dr. P. Streit Prof. Dr. P. Svedberg Dr. C. Tedmon Dr. P. Tenti Dr. L. Ulrich Mr. K. Vik Dr. J. Vltins Mr. J. Vorwerk Mr. B. Voss

Dr. G. Wachutka

Dr. J. Waldmeyer Mr. F. Walenberg

Mr. W. Wehrle Prof. Dr. J. Weller Mr. P. Willi Mr. M. Wlmshurst Prof. Dr. W. Zaengl Dr. H.R. Zeller Dr. W. Zimmermann Dr. N. Zommer

ABB Control Limited. Exhall/Coventry CV7 9ND. UK

Institute of Microwave Technology. S-164 21 Kista

TV Bucharest. R-71 273 Bucharest

TV Bremen. D-2S00 Bremen 33 Technische UniversiUi.t Braunschweig, D-3300 Braunschweig Rhein. Westf. Technische Hochschule Aachen. D-5100 Aachen AEA Technology Colour. Culham Laboratory, Abingdon/Oxfordshire. UK Ruhr-UniversiHi.t-Bochum. D-4630 Bochum

ABB Drives AG. CH-5300 Turgi

ETH ZUrich. CH-S092 Zurich ABB Semiconductor AG, CH-5405 Dattwil

ABB Semiconductor AG. CH-5600 Lenzburg

ABB HAFO AB. S-175 26 Janalla

ABB Asea Brown Boveri Ltd. CH-S050 Zurich

University of Padova. 1-35 131 Padova

ABB Mtttelspannungstechnik AG. CH-S050 Zurich

ABB Corporate Research. N-1360 Nesbru

ABB Transportation AG. CH -S050 Zurich

Bernische Kraftwerke AG. CH-3000 Bern Fraunhofer Institut fUr Solare Energiesysteme. D·7S00 Freiburg ETH Zurich Institut fUr Quantenelektronik. CH-S093 Zurich ABB Semiconductor AG. CH-5600 Lenzburg N.V. Nederlandse Spoorwegen. NL-3500 HA utrecht ABB Drives AG. CH-5300 Turgi

ETH Zurich. CH-S092 Zurich

ABB Normelec AG. CH-S953 Dietikon

Hill Graham Control Ltd., Bucks HP12 3RB. UK ETH Zurich, CH-S092 Zurich

ABB Semiconductor AG. CH-5405 Dattwil Ascom Favag SA.. CH-2022 Bevatx ABB IXYS Corp., San Jose CA 95 131, USA

xiii