Power Management Design Challenges and...

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Power Management Design Challenges and Techniques for Power Amplifiers in 2G/3G/4G Multimode Handsets William O. Keese National Semiconductor © 2010 National Semiconductor Corporation. PWR SoC 2010.

Transcript of Power Management Design Challenges and...

Power Management Design

Challenges and Techniques for

Power Amplifiers in 2G/3G/4G

Multimode Handsets

William O. Keese

National Semiconductor

© 2010 National Semiconductor Corporation. PWR SoC 2010.

National Semiconductor’s Innovation in

RF SMPS for Handsets

• Creator of first DCDC for RF PA in 2004

• Shipped in significant volumes since 2005

• Continuous innovator

– First GSM support

– First Boost support

– First

• Estimate: RF DCDC has saved 2 Mega Watts of Power over the last 5 years

• DCDC for RF PA will ship in all 3G and 4G handsets by 2012

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Requires NDA

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Multi-mode Multi-band RF Transmitter

with variable PA Vcc supply

3

RF Power

Vcc PA =0.5 to 3.4V

•Typical smartphone includes 2 to 5 3GPP bands plus

•Quad band GSM/EDGE

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Technology & Market Trends

Highly Integrated

System Platforms

Transmitter PA

Efficiency

Improvements

Smartphone

Power Gap

Standards

Evolution

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© 2010 National Semiconductor Corporation. PWR SoC 2010.

Buck DCDC + PA Reduces Worst Case

Thermal of Highly Integrated Phones

Transmitter PA

Efficiency

Improvements

Smartphone

Power Gap

Standards

Evolution

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Reduced Thermal Emissions of PA by > 20%

57° C 44.7° C

PA ONLY

VBATT = 4.2V

VCC = 4.2V

RFOUT = 26dBm

Temp = 57 C

PA with DCDC

VBATT = 4.2V

VCC = 3.4V

RFOUT = 26dBm

Temp = 44.7 C

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Smartphone Power Gap

Highly Integrated

System Platforms

Transmitter PA

Efficiency

Improvements

Standards

Evolution

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Enabling longer charge cycle, smaller form factor

1000

1200

1400

1600

1800

2000

2200

FY09 FY10 FY11 FY12 FY13 FY14

mA

-h

Smartphone Power Gap

Battery Capacity

Smartphone (no RF power)

Smartphone (with RF power)

Source: IMS & internal NSC

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Handset Transmit Power Profile

Normalized Cumulative Distributions

Highly Integrated

System Platforms

Transmitter PA

Efficiency

Improvements

Standards

Evolution

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Constant growth in data consumption and use of

BW drives need to improve PA system eff

© 2010 National Semiconductor Corporation. PWR SoC 2010.

DCDC + PA Transmitter Efficiency

Improvements

Highly Integrated

System Platforms

Smartphone

Power Gap

Technology

Trends

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DCDC dynamically adjusts PA supply voltage to

optimize efficiency during lower power RF Tx

Without DCDC

PA IDC

With DCDC

© 2010 National Semiconductor Corporation. PWR SoC 2010.

DCDC + PA Transmitter Efficiency

Improvements

Highly Integrated

System Platforms

Smartphone

Power Gap

Technology

Trends

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© 2010 National Semiconductor Corporation. PWR SoC 2010.

0.0%

5.0%

10.0%

15.0%

20.0%

25.0%

-10.00 -5.00 0.00 5.00 10.00 15.00 20.00 25.00

Eff

icie

ncy

RF Power out (dBm)

3GPP Band 1

LTE 5MHz QPSK,

Freq = 1977.5MHz

Vbatt = 3.7V

Advantage

With DCDC

Highly Integrated

System Platforms

Transmitter PA

Efficiency

Improvements

Smartphone

Power Gap

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From “NICE TO HAVE” in 2/2.5G

to “MUST HAVE” in 3G

Standards Evolution

© 2010 National Semiconductor Corporation. PWR SoC 2010.

RF Power Management Evolution in

Mobile Devices

RF

Performance

Constraints

• Transmit Spectral Mask

• Voltage Switching Transients

• Low Supply Noise

Talk Time

Improvement

• PA + DCDC Architecture Improvement

• Light Load Efficiency Enhancement

• Low Voltage Battery support

Solution Size

Reduction

• Multi-mode PA support

• Smaller Switch Inductor

• Integrated Inductor

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© 2010 National Semiconductor Corporation. PWR SoC 2010.

Increased RF Performance

• High current capability (up to 2.5A)

• High efficiency (up to 96%)

– At Heavy and Light Loads

• Performance requirements for the DCDC converter extend into the PA requirements.

– Detailed understanding of the RF performance is mandatory

– Rx Band Noise

– EVM, ACLR, PvT

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RF Spectral

Constraints

© 2010 National Semiconductor Corporation. PWR SoC 2010.

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Transmit Spectral Mask

Adjacent Channel Leakage Ratio

• Pout ACLR1 Linearity meets ACLR spec with 6 dB margin

• Higher data rate uplink possible (16QAM) at Vbatt = 3.4V

• Pout degraded and ACLR1

Linearity does not meet -40

dBc

• Lower data rate uplink

(QPSK) at Vbat = 3.2V

RF Spectral

Constraints

© 2010 National Semiconductor Corporation. PWR SoC 2010.

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Transient Performance

• Wcdma Inner Loop Power Control

– During active transmission in wcdma or HSPA the UE will ratchet the Tx output power up or down

– Window < +/- 25 usec for transitioning between two successive power levels

• GSM Power Ramp

– Power vs. Time template requires tight output regulation

– For DCDC with fast transient response, it is beneficial to adjust the PA Vcc on a slot-by-slot basis

GSM Multi-Slot Timing

0 1 2 3 4 5 6 7

GSM burst

Vdcdc

Enable DC

Initialize PA Vcc

PA Vcc

change

(slot to slot)Disable

DCDC

4.615ms

PA Vcc

change

(slot to slot)

RF Spectral

Constraints

© 2010 National Semiconductor Corporation. PWR SoC 2010.

RF Noise

• Wideband noise

– Stringent noise requirements for 3GPP Rx frequency bands as well as GPS

– Switching frequency ripple must be extremely low at higher harmonic frequencies

• RFIC operating voltage is dropping from 2.5V to < 1.8V

– Critical components pulled from RFIC into RF PMU

• DCDC for PA

• LDO’s

• DCDC for RFIC

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RF Spectral

Constraints

© 2010 National Semiconductor Corporation. PWR SoC 2010.

RF Power Management Evolution in

Mobile Devices

RF

Performance

Constraints

• Transmit Spectral Mask

• Voltage Switching Transients

• Low Supply Noise

Talk Time

Improvement

• PA + DCDC Architecture Improvement

• Light Load Efficiency Enhancement

• Low Voltage Battery support

Solution Size

Reduction

• Multi-mode PA support

• Smaller Switch Inductor

• Integrated Inductor

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© 2010 National Semiconductor Corporation. PWR SoC 2010.

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Transmitter Efficiency Improvements

• Transmitter Needs

• Power amplifier efficiency is optimized for max POUT

• Majority of time POUT is lower PA is at poor efficiency

• Variable Supply

• Optimize supply voltage based on POUT

• Improve PA efficiency at lower powers

No Savings

(Past)

More Power Savings?40% Savings

with DCDC

High SpeedTracking

Talk Time

Improvement

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Envelope Tracking System Architecture

• Components: Chipset, ET Modulator and PA

– Significant enhancement of PA efficiency with high-PAR signals and medium to high TX power levels

– Supporting all modulation methods up to full LTE

• Open-loop vs. Closed loop solution

• Less modifications to firmware

• More cost effective, less processing

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Talk Time

Improvement

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Envelope Tracking Modulator

• High performance analog circuitry

– Wide bandwidth requirements

– Fast transitions between peaks and valleys

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0 0.5 1 1.5 2 2.5 30

1

2

3

4

5

Voltage [

V]

0 0.5 1 1.5 2 2.5 30

0.2

0.4

0.6

0.8

1

Time [usec]

Curr

ent

[A]

Ideal Vcc

Measured Vcc

Simulated IccLTE PA Icc vs. Time

Talk Time

Improvement

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Light Load Performance Enhancement

50%

60%

70%

80%

90%

100%

-4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24

Pout (dBm)

Eff

ien

cy %

Talk Time

Improvement

Handset spends a lot of time at lower power levels

– Low Voltage, Low Current

– Traditional DCDC performance drops off at light loads

Without light load

enhancement

With light load

enhancement

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Wider Battery Operating Range

• Buck-Boost

– Increases usable region of battery

– No MPR Backoff required

– Larger coverage area

– Higher Data Rates

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Extended RF spec compliant

region of operation with

Boost-Buck DCDC

Talk Time

Improvement

© 2010 National Semiconductor Corporation. PWR SoC 2010.

RF Power Management Evolution in

Mobile Devices

RF

Performance

Constraints

• Transmit Spectral Mask

• Voltage Switching Transients

• Low Supply Noise

Talk Time

Improvement

• PA + DCDC Architecture Improvement

• Light Load Efficiency Enhancement

• Low Voltage Battery support

Solution Size

Reduction

• Multi-mode PA support

• Smaller Switch Inductor

• Integrated Inductor

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© 2010 National Semiconductor Corporation. PWR SoC 2010.

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Filters

Tx/Rx

Duplexers

SAWs

LPFs

N:1

TRX Path

Control

Antenna

Tuning

Element

Power Amp Modules

Output

Matching

Networks

ANT

PA Bias

Controller

PA Driver

Bias

RFIC/

LNA

Supply

PA Output

Bias

Adaptive

Bias

Controller

PA Ramp/

Envelope

Biasing Blocks

DCDC SUPABoost

Power

Detect

VSWR

Det

Temp

Sensor

Alarm

Sensors

LNAs

RF Front End Integration

Solution Size

Reduction

© 2010 National Semiconductor Corporation. PWR SoC 2010.

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ConvergedFront-End

RF Power

RF Power

Tuning Elements

0.5 to 4.5 V

TraditionalFront-End

0.5 to 3.4V

Multi-mode PA Support

Solution Size

Reduction

© 2010 National Semiconductor Corporation. PWR SoC 2010.

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Controlling SMPS for PA Module

• Multiple options to consider

– Interface type (Analog or Digital).

– Controller type (RFIC or BBIC).

– Single-chain or multi-chain PA Modules.

– Multi-slot power ramping for GSM/EDGE.

SMPS

RFIC

BBIC

Solution Size

Reduction

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Reducing Switch Inductor Size

– Smaller inductor value reduces filtering of switching noise

– Higher switching frequency trades off efficiency due to AC switching losses

• DCDC on Ferrite

– Parasitic inductance on all pins

– Especially critical on power and grounds

– Max height constrained to ≤ 1.0 mm

– DC resistance increases

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Solution Size

Reduction

DCDC

DCDC

DCDC

© 2010 National Semiconductor Corporation. PWR SoC 2010.

Conclusions/Challenges

• New Multi-mode Multi-band handsets are demanding higher and higher levels of performance

• Variable RF PA supply is required for next generation of slim trim and high data rate smartphones

• Maintaining RF noise performance with DCDC for PA is not trivial

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© 2010 National Semiconductor Corporation. PWR SoC 2010.

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National’s RF Front End Benefits

Increased

Usage

Time

Decreased

Thermal

Emissions

Small

Solution

Size

Reduced

BOM Cost

Increased

Coverage

Area

>25% >20% <10mm2 >5% >10%

Measurable

Benefits

© 2010 National Semiconductor Corporation. PWR SoC 2010.

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© 2010 National Semiconductor Corporation. PWR SoC 2010.

Contact: [email protected]