Power electronics do’s and don’ts…...Derating MOSFET’s IGBT’s Single Event Burn-out...

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Power electronics do’s and don’tsTonnie Telgenhof Oude Koehorst [email protected] www.nedap-uv.com www.nedap.com 1

Transcript of Power electronics do’s and don’ts…...Derating MOSFET’s IGBT’s Single Event Burn-out...

Page 1: Power electronics do’s and don’ts…...Derating MOSFET’s IGBT’s Single Event Burn-out Comparing the relative significance of factors that affect SEB failure rates shows design

Power electronics do’s and don’ts…

Tonnie Telgenhof Oude [email protected]

www.nedap.com

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Page 2: Power electronics do’s and don’ts…...Derating MOSFET’s IGBT’s Single Event Burn-out Comparing the relative significance of factors that affect SEB failure rates shows design

Do’s and don’ts……

IntroductieSpec’s & reviewsOntwerp TestenLevensduurtesten

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12 marktgroepen765 medewerkers181 miljoen omzet

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Nedap UV

DrinkwaterNew York12000 lampen2,7 MW

AfvalwaterChicago

920 lampen0,92 MW

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Business plan SpecificatieReview

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Optimalisatie koelingdoor simulatie

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Koelen halfgeleiders

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Koelen halfgeleiders

Bij 400V: 2-3 mm

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Page 9: Power electronics do’s and don’ts…...Derating MOSFET’s IGBT’s Single Event Burn-out Comparing the relative significance of factors that affect SEB failure rates shows design

KruipwegPol. degr. 2: x 1,2Pol. degr. 3: x 1,4

mm.

kVp

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Afscherming 11.7kW DC/AC converter

PCB onder transformatoren afschermenMicroprocessor + circuits afschermen 4 lagen printkaart

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Page 11: Power electronics do’s and don’ts…...Derating MOSFET’s IGBT’s Single Event Burn-out Comparing the relative significance of factors that affect SEB failure rates shows design

Afscherming 11.7kW DC/AC converter

PCB onder transformatoren afschermenVerliezen in PCB voorkomen (skin effect)

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HS Diodes

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Overslag door tinkorrel tijdens functietest

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Page 14: Power electronics do’s and don’ts…...Derating MOSFET’s IGBT’s Single Event Burn-out Comparing the relative significance of factors that affect SEB failure rates shows design

Design Maturity TestA method to demonstrate a MTBF value is the Design Maturity Test (DMT).The objective of the DMT is to discover potential design deficiencies and to demonstrate that the observed MTBF within a stated confidence interval is equal to the specified interval.The calculated MTBF (at nominal setting) is 370000 hrs. The demonstrated MTBF in the DMT shall be shown to be equal to the calculated/specified MTBF or more, with a 90% confidence level.The following formula [1] and chi‐square table will be used to calculate the demonstrated MTBF.

Demonstrated MTBF=                                                                                                       [source: MIL standard 781]

Where T = Total test time  r = Total number of failuresV = Degrees of freedom = 2r+2

Chi‐square table: (at 90% confidence level)

V x2 1 2.712 4.613 6.254 7.785 9.246 10.65

Demonstrated MTBF (192 units)

0

200000400000

600000

800000

1 3 5 7 9 11Months

MTB

F H

rs. No failure

1 failure

2 failures

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Highly Accelerated Life Test-100 tot +200 ºC70º C / min.

0-50 grms / BW-10 kHz.tot 300 kg

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Resultaten HALT

na 2:40 uur vibration step tot 35 grmsafbreken kunststof bevestiging 

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Resultaten HALT

Na 4:17 uurtot 35 grms / ‐20...65°Cafbreken SMD condensator

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Resultaten HALT

bij 15 grmsonderbreken batterij clip 4ms.

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Resultaten HALT

na 0:49 uur25 grmsafbreken spoel

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Resultaten HALT

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Resultaten HALT

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Resultaten HALT

na 4:30 uur45 grms / ‐25..+55°Csoldering onderbroken 

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Resultaten HALT

na :27 uur80°CPolySwitch onderbroken 

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Resultaten HALT

na 0:49 uur25 grmsconnector los 

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Corrosie Ventilator

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Ventilator PCB

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Verbeteringen vanuit HALT:

Gebruik “locking” connector systemenOndersteun PCB voldoendeRTV kit voor “grote” leaded componenten

max. 20 gram per soldering (dubbelzijdige print).Print-in-print: “full plated surface”Let op derating

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Derating

MOSFET’sIGBT’s

SingleEventBurn-out

Comparing the relative significance of factors that affect SEB failure rates shows design options for mitigating SEBs are limited

Bron: Jonathan Dodge -Power Electronics Technology

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Derating

MOSFET’sIGBT’s

SingleEventBurn-out

TO-247 MOSFET or IGBT failure rates at 100°C reveal the strong dependency of SEB on voltage stress Bron: Jonathan Dodge -Power Electronics Technology

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Derating

FilmcondensatorPulsbelasting/overbelasting

Filmcondensatoren voor resonantiecircuits (ontsteekcircuits) Bron: TDK -Epcos

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Blijf componenten spec’s checken !

versie 2012 versie 2015

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Levensduur testen

14 jaar continue 80W UV lamp driver3 elektrolytische condensatoren vervangen

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Levensduur testen

Apart gebouw i.v.m. risico / verzekering

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Levensduur testen

Testen relais300.000 x90A

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Veiligheid

Blijf kritisch, ook bij adviesaan klanten…

900°C

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Veiligheid

Blijf kritisch, ook bij adviesaan klanten…

Luchtweg < 1 mm

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Veiligheid

Blijf kritisch, ook bij adviesaan klanten…

Luchtweg < 1 mm

Ondersteuning ontbreekt

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EMC

Blijf kritisch, ook bij adviesaan klanten…

netspanning

Lamp Driver controls2kV L-GND surge test

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Veiligheid

Maar ook bij eigenontwerp en testsystemen.

Oorzaak: Aansluit klem niet voldoende vast.

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Overspanning

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Verpakking producten…..

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Veiligheid

Mogelijkeclaims

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Veiligheid

Mogelijkeclaims

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Veiligheid

Mogelijkeclaims

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RTFM

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Blijf kritisch en check alle foutmogelijkhedenVeiligheid en EMC aspecten, vanaf eerste designBetrouwbaarheid en levensduur

Maak goede analyses

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Power electronics do’s and don’ts…

Tonnie Telgenhof Oude [email protected]

www.nedap.com

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