Power Design - Head to Head: Integrated Silicon vs. GE Point of Load (POL)
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Transcript of Power Design - Head to Head: Integrated Silicon vs. GE Point of Load (POL)
GECritical Power
Power Design - Head to HeadIntegrated Silicon vs. GE Point of Load (POL)
In the match-up between two leading power design options, one clear winner emerges…
RELIES ONIN-HOUSEEXPERTISE
POWER MODULEWIZARD
ONLINE DESIGN TOOL AND FAE TECHNICAL SUPPORT
Integrated Silicon: GE POL:
Ease ofDesign
MotherboardReal Estate
Reliability
Scalability
Performance
Capacitance & Transient Response
Design Approach
Cost
EMI, Ripple& Noise
Feature
www.gecriticalpower.com
VERTICALLY DENSE.HEIGHT REDUCED AT EXPENSE OF FOOTPRINT
HORIZONTALLY DENSE.TIGHTER FOOTPRINTS
UTILIZING AVAILABLE HEIGHT
HIGHIPC9592 ADHERENCE
SINGLE SOURCEDINDUSTRY, DOSA &
PMBusTM STANDARDFOOTPRINT
BETTER THERMALPERFORMANCE
& ELECTRICAL CONVERSION EFFICIENCY
STANDARD
EXPENSIVE
WIDER SPECTRUM,POOR FILTERING
LIMITED / POOR DIGITAL &ANALOG RICH
TIGHT & ADJUSTABLEFREQUENCY
HIGH VALUE
RESTRICTEDBY DEFAULT CONTROLLOOP SETTING
LIMITEDTO THEIR OWNCOMPONENT LIBRARY
OPTIMALUSING TUNABLE LOOP
LEVERAGE BESTCOMPONENTS
AVAILABLE FOR THE DESIGN
HIGHIPC COMPLIANCE UNKNOWN