CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGY

Main Applications• Wafer Level Stress Relief• Chip Level Stress Relief (Chip Side Healing CSH)• Post Polish Treatment• Wafer Thinning• Surface Passivation• Surface Cleaning

Ultra Thin Wafer Treatment applyingRemote Cold Dry Etch Processes

SEMICONDUCTOR/MEMSCHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

Remote Cold Dry EtchRemote Cold Dry Etch

Wafer Level Stress Relief

applicable to ground wafers:• on backgrinding tapes• on hard support and ring carriers• as carrier-free wafers

Chip Level Stress Relief (CSH) (Chip Side Healing)

applicable to singulated substrates(blade/laser):

• as single chips on tape• as singulated wafers on dicing tape• as singulated or partially diced wafers

on grinding tape

Substrate Thinning

applicable to:• down to 10 µm thickness• to any substrate size up to 12” wafers• single relocated chips on tape

Post Polish Treatment

applicable to thinned wafers:• as pre-metal step on shiny surfaces

Surface Passivation

applicable to wafers and chips:• seals against contamination• generates hydrophilic surface

Surface Cleaning

applicable to wafers and chips:• eliminates loose organic material• prepares the substrates for etching

PVA TePla AGHans-Riedl-Strasse 585622 Feldkirchen, GermanyTel. +49(0) 89-905 03-0Fax +49(0) 89-905 03-185E-mail: plasma@pvatepla.comwww.pvatepla.com

The Power of Plasma

PVA TePla America Inc. 251 Corporate Terrace Corona, CA 92879-6000, USATel. +1 951-371-2500Fax +1 951-371-9792E-mail: sales@teplaamerica.comwww.teplaamerica.com

Is your Wafer flexible enough ?

We can make thatpossible !

But is really your Chipflexible enough ?

We can also make that possible as well !

Tempe, AZ

North America

Albany, NY

GermanyChina

Israel

South Korea

Philippines

Singapore,Malaysia

local representatives

Vacuum Systems

CrystalGrowing Systems

PlasmaSystems

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

Remote Cold Dry Etch Remote Cold Dry Etch Remote Cold Dry Etch

The PVA TePla AG, Division PlasmaSystems, develops, assembles and marketsturn-key plasma based equipment and proces-ses for wafer manufacturing and related semi-conductor areas. After the acquisition ofASYNTIS in 2006 we have optimized theASYNTIS remote cold dry etching processtechnology and equipment for Ultra Thinwafers and for chips in order to create the hig-hest throughput and most versatile mass pro-duction machines available.

For the first time, Microwave remote plasmaetch meets the industrial requirements interms of process performance as well as highthroughput for a large variety of thinnedwafer/chip applications.

Leading semiconductor companies are usingPVA TePla systems in backend manufacturingprocesses for thin wafer/chip, solar cells anddiode production.

Beyond today’s applications, PVA TePla is dedi-cated to expand the usage of its unique DryEtch technology towards new applicationsalong the Ultra Thin wafer production line,replacing or substituting existing backend pro-cess technologies which are no longer applica-ble or effective with decreasing wafer thickness.

All machines and process solutions are availa-ble for manufacturing common wafer sizes upto 12” and 12” framed wafers on manualmachines, OEM, and fully automatic stand-alone systems.

Why Ultra Thin Wafers?

As the electronics market continues its minia-turization of packaged products, integratedcircuit (IC) packaged devices must follow thetrend of miniaturization. The key enablingtechnology for smaller IC packages is 3D-Interconnect technology and multiple stackeddies that exceed the number of stacked chipsfor conventional wire bonding.

The principle market is consumer electronics,pushing for the vertical integration with stacked dies like NAND and Flash RAM. AlsoRF-Tags (chips-in paper etc.) require thinchips enabling a very small bending radius andhigh flexibility. The next group is the powerdevice market where higher output from thinchips is the goal to help minimize heat gene-ration inside the thin silicon.

Package height reduction• Handheld electronics• Vertical integration (3D-Interconnect)• Stacked dies: NAND, Flash RAM

Compliant electronic assemblies• Smart labels• Chip-on-flex, chip-in-paper, chip-in-board• Thickness of 50 µm and below needed

Heat dissipation• Power devices• Microprocessors• Low thermal resistance of thinned chip

(today 200-250 µm Future 30-80 µm)

Stress Relief Technology

In between device processing (“Front End”)and packaging of chips (“Back End”) the waferis thinned and singulated into chips (“PreAssembly”). These two activities induce a lotof stress in the brittle wafer material whenperformed by typical mechanical processes(grinding, dicing saw or laser processing).

The thinner the wafer the greater the risks. Atthis stage the wafers and chips are most vul-nerable to breakage due to damage inducedby the mechanical treatment.

Remote plasma etching (pure dry chemicaletching) restores the mechanical integrity ofthese thin chips by the elimination of damageon the wafer backside and chip side wall. Inbrief, die strength is improved by stress reliefby factor 30 (2900%).

Why Remote Cold Dry Etch?

The Remote Cold Dry Etch applies a high effi-ciency Microwave source in Argon Down-stream mode (Remote). Here the plasma islocated about 60 cm above the substrateenforcing pure dry chemical etching on thesubstrate surfaces. Fluorine radicals are car-ried by a directed stream of argon to the workpiece and there provides a soft surface treat-ment of the brittle, ultra thin wafers.

This single wafer process is very stable, withreactant gases continually being refreshedand product gases continually pumped away.Since no wet chemicals are used there is gre-atly reduced risk of cross contamination.

By the in-situ change of the gas compositionthe remote plasma technology is the onlytechnology offering a passivation processdirectly after the stress relief.

Advantages• No direct plasma on the substrate• No wet chemicals• No cross contamination

Why Microwave?

For processing devices that are sensitive toelectro static discharge, microwave generatedplasmas have distinct advantages over RF.Due to the higher frequency oscillations of theelectric field in microwave plasmas, electronstravel shorter distances compared to RF plas-mas before they switch direction.

This means that fewer electrons reach thedevice surface per switching cycle, thus mini-mizing the surface charging effect. With sur-face charge at a minimum there is no potenti-al for accelerating ions towards the surfacethat may cause undesirable surface bombard-ment.

Microwave plasma etching is very well suitedfor radical based and therefore isotropic innature and ideal for Dry Etching Applications.

Advantages• No ESD charging effect• No ion bombardment• No bias

Benefits for our Customers

The PVA TePla technology combined with theworld wide patented radical distribution systemallows high uniformity even at 12” substrates.Good uniformity is pre-requisite for an overallhigh etch rate at lowest possible process tempe-ratures (e.g. 70-80°C). In addition, our techno-logy achieves full water relaxation by removal ofonly 3 µm silicon layers after mesh #2000 grin-ding or e.g. 7 µm removal after mesh #1500grinding. Hence, our solutions offer significant throughput,application and handling improvements com-pared to wet etch or polishing.

Low Temperature and Easy ProcessIntegrationThe PVA TePla plasma etch tools do not requireextensive gas or water purification treatment,and can be easily integrated into existing manu-facturing lines.

Controlled Process Quality and HighUniformity for Tunable SurfacesThe chamber and chuck design has been optimi-zed for maximum radial etch uniformity.Supported by a computer aided process control,our customers achieve consistent high-qualitywafer surfaces, no matter what surfaces arerequired (mirror-like or matt).

Low Cost of Ownership and Rapid ROIOur technological benefits turn into clear econo-mical benefits for customers.Benchmark tests with competing technologyresult in cost advantages beyond a factor of 2.PVA TePla supports its customers worldwide toimplement rapid ROI.We can apply our technology to 2”-12” wafersand substrates up to 12” dicing frame. Oursystems are available in manual, OEM and fullyautomatic stand-alone versions.

Advantages• Manual• OEM• Stand Alone

The Power of PlasmaThe Power of Plasma The Power of Plasma

120

100

80

60

40

20

0100 150 1887550

Die Strength before Stress Relief Die Strength after PSG Remote Cold Plasma Stress Relief

500

1000

[ V ]

[ Hz ]

SelfBias Voltage

RF13,56 MHz

Microwave2,45 GHz

0103 104 105 106 107 108 109

Process Gases InletMicrowave source(2.45 GHz)

Remote Plasma andRadical Generation Zone

Wafer thickness (µm) before plasma etching

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

Remote Cold Dry Etch Remote Cold Dry Etch Remote Cold Dry Etch

The PVA TePla AG, Division PlasmaSystems, develops, assembles and marketsturn-key plasma based equipment and proces-ses for wafer manufacturing and related semi-conductor areas. After the acquisition ofASYNTIS in 2006 we have optimized theASYNTIS remote cold dry etching processtechnology and equipment for Ultra Thinwafers and for chips in order to create the hig-hest throughput and most versatile mass pro-duction machines available.

For the first time, Microwave remote plasmaetch meets the industrial requirements interms of process performance as well as highthroughput for a large variety of thinnedwafer/chip applications.

Leading semiconductor companies are usingPVA TePla systems in backend manufacturingprocesses for thin wafer/chip, solar cells anddiode production.

Beyond today’s applications, PVA TePla is dedi-cated to expand the usage of its unique DryEtch technology towards new applicationsalong the Ultra Thin wafer production line,replacing or substituting existing backend pro-cess technologies which are no longer applica-ble or effective with decreasing wafer thickness.

All machines and process solutions are availa-ble for manufacturing common wafer sizes upto 12” and 12” framed wafers on manualmachines, OEM, and fully automatic stand-alone systems.

Why Ultra Thin Wafers?

As the electronics market continues its minia-turization of packaged products, integratedcircuit (IC) packaged devices must follow thetrend of miniaturization. The key enablingtechnology for smaller IC packages is 3D-Interconnect technology and multiple stackeddies that exceed the number of stacked chipsfor conventional wire bonding.

The principle market is consumer electronics,pushing for the vertical integration with stacked dies like NAND and Flash RAM. AlsoRF-Tags (chips-in paper etc.) require thinchips enabling a very small bending radius andhigh flexibility. The next group is the powerdevice market where higher output from thinchips is the goal to help minimize heat gene-ration inside the thin silicon.

Package height reduction• Handheld electronics• Vertical integration (3D-Interconnect)• Stacked dies: NAND, Flash RAM

Compliant electronic assemblies• Smart labels• Chip-on-flex, chip-in-paper, chip-in-board• Thickness of 50 µm and below needed

Heat dissipation• Power devices• Microprocessors• Low thermal resistance of thinned chip

(today 200-250 µm Future 30-80 µm)

Stress Relief Technology

In between device processing (“Front End”)and packaging of chips (“Back End”) the waferis thinned and singulated into chips (“PreAssembly”). These two activities induce a lotof stress in the brittle wafer material whenperformed by typical mechanical processes(grinding, dicing saw or laser processing).

The thinner the wafer the greater the risks. Atthis stage the wafers and chips are most vul-nerable to breakage due to damage inducedby the mechanical treatment.

Remote plasma etching (pure dry chemicaletching) restores the mechanical integrity ofthese thin chips by the elimination of damageon the wafer backside and chip side wall. Inbrief, die strength is improved by stress reliefby factor 30 (2900%).

Why Remote Cold Dry Etch?

The Remote Cold Dry Etch applies a high effi-ciency Microwave source in Argon Down-stream mode (Remote). Here the plasma islocated about 60 cm above the substrateenforcing pure dry chemical etching on thesubstrate surfaces. Fluorine radicals are car-ried by a directed stream of argon to the workpiece and there provides a soft surface treat-ment of the brittle, ultra thin wafers.

This single wafer process is very stable, withreactant gases continually being refreshedand product gases continually pumped away.Since no wet chemicals are used there is gre-atly reduced risk of cross contamination.

By the in-situ change of the gas compositionthe remote plasma technology is the onlytechnology offering a passivation processdirectly after the stress relief.

Advantages• No direct plasma on the substrate• No wet chemicals• No cross contamination

Why Microwave?

For processing devices that are sensitive toelectro static discharge, microwave generatedplasmas have distinct advantages over RF.Due to the higher frequency oscillations of theelectric field in microwave plasmas, electronstravel shorter distances compared to RF plas-mas before they switch direction.

This means that fewer electrons reach thedevice surface per switching cycle, thus mini-mizing the surface charging effect. With sur-face charge at a minimum there is no potenti-al for accelerating ions towards the surfacethat may cause undesirable surface bombard-ment.

Microwave plasma etching is very well suitedfor radical based and therefore isotropic innature and ideal for Dry Etching Applications.

Advantages• No ESD charging effect• No ion bombardment• No bias

Benefits for our Customers

The PVA TePla technology combined with theworld wide patented radical distribution systemallows high uniformity even at 12” substrates.Good uniformity is pre-requisite for an overallhigh etch rate at lowest possible process tempe-ratures (e.g. 70-80°C). In addition, our techno-logy achieves full water relaxation by removal ofonly 3 µm silicon layers after mesh #2000 grin-ding or e.g. 7 µm removal after mesh #1500grinding. Hence, our solutions offer significant throughput,application and handling improvements com-pared to wet etch or polishing.

Low Temperature and Easy ProcessIntegrationThe PVA TePla plasma etch tools do not requireextensive gas or water purification treatment,and can be easily integrated into existing manu-facturing lines.

Controlled Process Quality and HighUniformity for Tunable SurfacesThe chamber and chuck design has been optimi-zed for maximum radial etch uniformity.Supported by a computer aided process control,our customers achieve consistent high-qualitywafer surfaces, no matter what surfaces arerequired (mirror-like or matt).

Low Cost of Ownership and Rapid ROIOur technological benefits turn into clear econo-mical benefits for customers.Benchmark tests with competing technologyresult in cost advantages beyond a factor of 2.PVA TePla supports its customers worldwide toimplement rapid ROI.We can apply our technology to 2”-12” wafersand substrates up to 12” dicing frame. Oursystems are available in manual, OEM and fullyautomatic stand-alone versions.

Advantages• Manual• OEM• Stand Alone

The Power of PlasmaThe Power of Plasma The Power of Plasma

120

100

80

60

40

20

0100 150 1887550

Die Strength before Stress Relief Die Strength after PSG Remote Cold Plasma Stress Relief

500

1000

[ V ]

[ Hz ]

SelfBias Voltage

RF13,56 MHz

Microwave2,45 GHz

0103 104 105 106 107 108 109

Process Gases InletMicrowave source(2.45 GHz)

Remote Plasma andRadical Generation Zone

Wafer thickness (µm) before plasma etching

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

Remote Cold Dry Etch Remote Cold Dry Etch Remote Cold Dry Etch

The PVA TePla AG, Division PlasmaSystems, develops, assembles and marketsturn-key plasma based equipment and proces-ses for wafer manufacturing and related semi-conductor areas. After the acquisition ofASYNTIS in 2006 we have optimized theASYNTIS remote cold dry etching processtechnology and equipment for Ultra Thinwafers and for chips in order to create the hig-hest throughput and most versatile mass pro-duction machines available.

For the first time, Microwave remote plasmaetch meets the industrial requirements interms of process performance as well as highthroughput for a large variety of thinnedwafer/chip applications.

Leading semiconductor companies are usingPVA TePla systems in backend manufacturingprocesses for thin wafer/chip, solar cells anddiode production.

Beyond today’s applications, PVA TePla is dedi-cated to expand the usage of its unique DryEtch technology towards new applicationsalong the Ultra Thin wafer production line,replacing or substituting existing backend pro-cess technologies which are no longer applica-ble or effective with decreasing wafer thickness.

All machines and process solutions are availa-ble for manufacturing common wafer sizes upto 12” and 12” framed wafers on manualmachines, OEM, and fully automatic stand-alone systems.

Why Ultra Thin Wafers?

As the electronics market continues its minia-turization of packaged products, integratedcircuit (IC) packaged devices must follow thetrend of miniaturization. The key enablingtechnology for smaller IC packages is 3D-Interconnect technology and multiple stackeddies that exceed the number of stacked chipsfor conventional wire bonding.

The principle market is consumer electronics,pushing for the vertical integration with stacked dies like NAND and Flash RAM. AlsoRF-Tags (chips-in paper etc.) require thinchips enabling a very small bending radius andhigh flexibility. The next group is the powerdevice market where higher output from thinchips is the goal to help minimize heat gene-ration inside the thin silicon.

Package height reduction• Handheld electronics• Vertical integration (3D-Interconnect)• Stacked dies: NAND, Flash RAM

Compliant electronic assemblies• Smart labels• Chip-on-flex, chip-in-paper, chip-in-board• Thickness of 50 µm and below needed

Heat dissipation• Power devices• Microprocessors• Low thermal resistance of thinned chip

(today 200-250 µm Future 30-80 µm)

Stress Relief Technology

In between device processing (“Front End”)and packaging of chips (“Back End”) the waferis thinned and singulated into chips (“PreAssembly”). These two activities induce a lotof stress in the brittle wafer material whenperformed by typical mechanical processes(grinding, dicing saw or laser processing).

The thinner the wafer the greater the risks. Atthis stage the wafers and chips are most vul-nerable to breakage due to damage inducedby the mechanical treatment.

Remote plasma etching (pure dry chemicaletching) restores the mechanical integrity ofthese thin chips by the elimination of damageon the wafer backside and chip side wall. Inbrief, die strength is improved by stress reliefby factor 30 (2900%).

Why Remote Cold Dry Etch?

The Remote Cold Dry Etch applies a high effi-ciency Microwave source in Argon Down-stream mode (Remote). Here the plasma islocated about 60 cm above the substrateenforcing pure dry chemical etching on thesubstrate surfaces. Fluorine radicals are car-ried by a directed stream of argon to the workpiece and there provides a soft surface treat-ment of the brittle, ultra thin wafers.

This single wafer process is very stable, withreactant gases continually being refreshedand product gases continually pumped away.Since no wet chemicals are used there is gre-atly reduced risk of cross contamination.

By the in-situ change of the gas compositionthe remote plasma technology is the onlytechnology offering a passivation processdirectly after the stress relief.

Advantages• No direct plasma on the substrate• No wet chemicals• No cross contamination

Why Microwave?

For processing devices that are sensitive toelectro static discharge, microwave generatedplasmas have distinct advantages over RF.Due to the higher frequency oscillations of theelectric field in microwave plasmas, electronstravel shorter distances compared to RF plas-mas before they switch direction.

This means that fewer electrons reach thedevice surface per switching cycle, thus mini-mizing the surface charging effect. With sur-face charge at a minimum there is no potenti-al for accelerating ions towards the surfacethat may cause undesirable surface bombard-ment.

Microwave plasma etching is very well suitedfor radical based and therefore isotropic innature and ideal for Dry Etching Applications.

Advantages• No ESD charging effect• No ion bombardment• No bias

Benefits for our Customers

The PVA TePla technology combined with theworld wide patented radical distribution systemallows high uniformity even at 12” substrates.Good uniformity is pre-requisite for an overallhigh etch rate at lowest possible process tempe-ratures (e.g. 70-80°C). In addition, our techno-logy achieves full water relaxation by removal ofonly 3 µm silicon layers after mesh #2000 grin-ding or e.g. 7 µm removal after mesh #1500grinding. Hence, our solutions offer significant throughput,application and handling improvements com-pared to wet etch or polishing.

Low Temperature and Easy ProcessIntegrationThe PVA TePla plasma etch tools do not requireextensive gas or water purification treatment,and can be easily integrated into existing manu-facturing lines.

Controlled Process Quality and HighUniformity for Tunable SurfacesThe chamber and chuck design has been optimi-zed for maximum radial etch uniformity.Supported by a computer aided process control,our customers achieve consistent high-qualitywafer surfaces, no matter what surfaces arerequired (mirror-like or matt).

Low Cost of Ownership and Rapid ROIOur technological benefits turn into clear econo-mical benefits for customers.Benchmark tests with competing technologyresult in cost advantages beyond a factor of 2.PVA TePla supports its customers worldwide toimplement rapid ROI.We can apply our technology to 2”-12” wafersand substrates up to 12” dicing frame. Oursystems are available in manual, OEM and fullyautomatic stand-alone versions.

Advantages• Manual• OEM• Stand Alone

The Power of PlasmaThe Power of Plasma The Power of Plasma

120

100

80

60

40

20

0100 150 1887550

Die Strength before Stress Relief Die Strength after PSG Remote Cold Plasma Stress Relief

500

1000

[ V ]

[ Hz ]

SelfBias Voltage

RF13,56 MHz

Microwave2,45 GHz

0103 104 105 106 107 108 109

Process Gases InletMicrowave source(2.45 GHz)

Remote Plasma andRadical Generation Zone

Wafer thickness (µm) before plasma etching

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGY

Main Applications• Wafer Level Stress Relief• Chip Level Stress Relief (Chip Side Healing CSH)• Post Polish Treatment• Wafer Thinning• Surface Passivation• Surface Cleaning

Ultra Thin Wafer Treatment applyingRemote Cold Dry Etch Processes

SEMICONDUCTOR/MEMSCHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

Remote Cold Dry EtchRemote Cold Dry Etch

Wafer Level Stress Relief

applicable to ground wafers:• on backgrinding tapes• on hard support and ring carriers• as carrier-free wafers

Chip Level Stress Relief (CSH) (Chip Side Healing)

applicable to singulated substrates(blade/laser):

• as single chips on tape• as singulated wafers on dicing tape• as singulated or partially diced wafers

on grinding tape

Substrate Thinning

applicable to:• down to 10 µm thickness• to any substrate size up to 12” wafers• single relocated chips on tape

Post Polish Treatment

applicable to thinned wafers:• as pre-metal step on shiny surfaces

Surface Passivation

applicable to wafers and chips:• seals against contamination• generates hydrophilic surface

Surface Cleaning

applicable to wafers and chips:• eliminates loose organic material• prepares the substrates for etching

PVA TePla AGHans-Riedl-Strasse 585622 Feldkirchen, GermanyTel. +49(0) 89-905 03-0Fax +49(0) 89-905 03-185E-mail: plasma@pvatepla.comwww.pvatepla.com

The Power of Plasma

PVA TePla America Inc. 251 Corporate Terrace Corona, CA 92879-6000, USATel. +1 951-371-2500Fax +1 951-371-9792E-mail: sales@teplaamerica.comwww.teplaamerica.com

Is your Wafer flexible enough ?

We can make thatpossible !

But is really your Chipflexible enough ?

We can also make that possible as well !

Tempe, AZ

North America

Albany, NY

GermanyChina

Israel

South Korea

Philippines

Singapore,Malaysia

local representatives

Vacuum Systems

CrystalGrowing Systems

PlasmaSystems

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGY

Main Applications• Wafer Level Stress Relief• Chip Level Stress Relief (Chip Side Healing CSH)• Post Polish Treatment• Wafer Thinning• Surface Passivation• Surface Cleaning

Ultra Thin Wafer Treatment applyingRemote Cold Dry Etch Processes

SEMICONDUCTOR/MEMSCHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS

Remote Cold Dry EtchRemote Cold Dry Etch

Wafer Level Stress Relief

applicable to ground wafers:• on backgrinding tapes• on hard support and ring carriers• as carrier-free wafers

Chip Level Stress Relief (CSH) (Chip Side Healing)

applicable to singulated substrates(blade/laser):

• as single chips on tape• as singulated wafers on dicing tape• as singulated or partially diced wafers

on grinding tape

Substrate Thinning

applicable to:• down to 10 µm thickness• to any substrate size up to 12” wafers• single relocated chips on tape

Post Polish Treatment

applicable to thinned wafers:• as pre-metal step on shiny surfaces

Surface Passivation

applicable to wafers and chips:• seals against contamination• generates hydrophilic surface

Surface Cleaning

applicable to wafers and chips:• eliminates loose organic material• prepares the substrates for etching

PVA TePla AGHans-Riedl-Strasse 585622 Feldkirchen, GermanyTel. +49(0) 89-905 03-0Fax +49(0) 89-905 03-185E-mail: plasma@pvatepla.comwww.pvatepla.com

The Power of Plasma

PVA TePla America Inc. 251 Corporate Terrace Corona, CA 92879-6000, USATel. +1 951-371-2500Fax +1 951-371-9792E-mail: sales@teplaamerica.comwww.teplaamerica.com

Is your Wafer flexible enough ?

We can make thatpossible !

But is really your Chipflexible enough ?

We can also make that possible as well !

Tempe, AZ

North America

Albany, NY

GermanyChina

Israel

South Korea

Philippines

Singapore,Malaysia

local representatives

Vacuum Systems

CrystalGrowing Systems

PlasmaSystems

CHIP PACKAGINGULTRA THIN WAFER WAFER METROLOGYSEMICONDUCTOR/MEMS