pn juction characteristics
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Transcript of pn juction characteristics
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Graphical
PN-Junction Diode V-I Characteristic
Reverse
breakdown
Forward Bias Region
Reverse Bias Region
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Mathematical Approximation
D
T
V
V
D sI = I (e -1)
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Ideal PN Junction Diode V-I Characteristic
Forward BiasShort Circuit
Reverse BiasOpen Circuit
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Diode Reverse Recovery Time
tais the time to remove the charge stored in the
depletion region of the junction
tbis the time to remove the charge stored in the bulk
semiconductor material
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Reverse Recovery Characteristics
Soft Recovery
Reverse recovery time = trr= ta+tb
Peak Reverse Current =IRR= ta(di/dt)
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Reverse Recovery Characteristics
Abrupt Recovery
Reverse recovery time = trr= ta+tb
Peak Reverse Current = IRR= ta(di/dt)
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Diode Characteristics
Due to differences
between devices,
each diode has a
different voltageacross it.
Would like to
Equalize the
voltages.
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Series-Connected Diodes with
Voltage Sharing Resistors
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Series-Connected Diodes with
Voltage Sharing Resistors
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Example 2.3
Is1= 30mA, Is2= 35mA
VD= 5kV
(a)R1=R2=R=100k,
find VD1and VD2
(b)Find R1and R2for VD1=VD2=VD/2
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Example 2.3 (a)
s1
s2
1 2
D D1 D2
D2 D D1
D1 D2s1 s2
DD1 S2 S1
-3 -3
D1
D2 D D1
I = 30mA
I = 35mA
R = R = R = 100k
-V = -V - V
V = V - V
V VI + = I +
R R
V RV = + (I - I )2 2
5kV 100kV = + (3510 - 3010 ) = 2750Volts
2 2
V = V - V = 5kV - 2750 = 2250Volts
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Example 2.3 (a) simulation
D1
DIODE_VIRTUAL*
D2
DIODE_VIRTUAL**
R1
100kOhm
R2
100kOhm
U1
DC 1MOhm-2.727k V+
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U2
DC 1MOhm-2.273k V+
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V1
5000 V
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Example 2.3 (b)
s1
s2
DD1 D2
D1 D2
s1 s2
1 2
D2 12
D1 1 s2 s1
1
2 -3 -3
2
I = 30mA
I = 35mA
VV = V = = 2.5kV
2
V V
I + = I +R R
V RR =
V - R (I -I )
R =100k
2.5kV100kR =
2.5kV -100k(3510 - 3010 )
R =125k
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