PMF170XP - Nexperia · • Trench MOSFET technology 3. Applications • Relay driver • High-speed...

PMF170XP20 V, 1 A P-channel Trench MOSFET29 October 2013 Product data sheet

1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) smallSurface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits• Low RDSon• Very fast switching• Trench MOSFET technology

3. Applications• Relay driver• High-speed line driver• High-side loadswitch• Switching circuits

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - -20 V

VGS gate-source voltage

Tj = 25 °C

-12 - 12 V

ID drain current VGS = -4.5 V; Tamb 25 °C [1] - - -1 A

Static characteristics

RDSon drain-source on-stateresistance

VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 6 cm2.

© Nexperia B.V. 2017. All rights reserved

Nexperia PMF170XP20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 2 / 15

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain1 2

3

SC-70 (SOT323)017aaa094

S

D

G

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PMF170XP SC-70 plastic surface-mounted package; 3 leads SOT323

7. MarkingTable 4. Marking codesType number Marking code

[1]

PMF170XP XD%

[1] % = placeholder for manufacturing site code

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - -20 V

VGS gate-source voltage

Tj = 25 °C

-12 12 V

VGS = -4.5 V; Tamb 25 °C [1] - -1 AID drain current

VGS = -4.5 V; Tamb = 100 °C [1] - -0.7 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -4 A

[2] - 290 mWTamb = 25 °C

[1] - 360 mW

Ptot total power dissipation

Tsp = 25 °C - 1670 mW

Tj junction temperature -55 150 °C





Symbol Parameter Conditions Min Max Unit

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

IS source current Tamb = 25 °C [1] - -0.4 A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.

Tj (°C)- 75 17512525 75- 25

017aaa123

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of junction temperature

Tj (°C)- 75 17512525 75- 25

017aaa124

40

80

120

Ider(%)

0

Fig. 2. Normalized continuous drain current as afunction of junction temperature





017aaa300

VDS (V)-10 -1 -10 2-10- 1

- 1

-10 -1

-10

ID(A)

-10 -2

(1)

(2)

(3)

(4)

(5)

Limit RDSon = VDS/ID

IDM = single pulse(1) tp = 1 ms(2) tp = 10 ms(3) DC; Tsp = 25 °C(4) tp = 100 ms

(5) DC; Tamb = 25 °C; drain mounting pad 6 cm2

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - 377 430 K/WRth(j-a) thermal resistancefrom junction toambient

in free air

[2] - 305 350 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

- 65 75 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.





017aaa301

tp (s)10- 3 102 10310110- 2 10- 1

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0.750.5

0.33 0.250.2

0.1

0.05 0.02

0.01 0

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values017aaa302

tp (s)10-3 102 10310110-2 10-1

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0.750.5

0.330.25

0.20.1

0.05 0.02

0.010

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-sourcebreakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V

VGSth gate-source thresholdvoltage

ID = -250 A; VDS = VGS; Tj = 25 °C -0.65 -0.9 -1.15 V

VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µAIDSS drain leakage current

VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA





Symbol Parameter Conditions Min Typ Max Unit

VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nAIGSS gate leakage current

VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA

VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ

VGS = -4.5 V; ID = -1 A; Tj = 150 °C - 250 284 mΩ

RDSon drain-source on-stateresistance

VGS = -2.5 V; ID = -1 A; Tj = 25 °C - 240 300 mΩ

gfs forwardtransconductance

VDS = -5 V; ID = -1 A; Tj = 25 °C - 1.9 - S

Dynamic characteristics

QG(tot) total gate charge - 2.6 3.9 nC

QGS gate-source charge - 0.63 - nC

QGD gate-drain charge

VDS = -10 V; ID = -1 A; VGS = -4.5 V;Tj = 25 °C

- 0.53 - nC

Ciss input capacitance - 280 - pF

Coss output capacitance - 43 - pF

Crss reverse transfercapacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C

- 30 - pF

td(on) turn-on delay time - 10 - ns

tr rise time - 16 - ns

td(off) turn-off delay time - 31 - ns

tf fall time

VDS = -10 V; ID = -1 A; VGS = -4.5 V;RG(ext) = 6 Ω; Tj = 25 °C

- 13 - ns

Source-drain diode

VSD source-drain voltage IS = -0.4 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V





VDS (V)0 - 4- 3- 1 - 2

017aaa303

- 2

- 1

- 3

- 4

ID(A)

0

VGS = - 3.5 V- 4.5 V

- 3.0 V

- 2.5 V

- 1.8 V

- 2.0 V

- 1.5 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values

017aaa129

VGS (V)0.0 - 1.5- 1.0- 0.5

- 10- 4

- 10- 5

- 10- 3

ID(A)

- 10- 6

(2)(1) (3)

Tj = 25 °C; VDS = -3 V(1) minimum values(2) typical values(3) maximum values

Fig. 7. Sub-threshold drain current as a function ofgate-source voltage

ID (A)-2.0 -4.0-3.5-2.5 -3.0

017aaa304

200

300

100

400

500RDSon(mΩ)

0

(1)

(2)(3)

(4)(5)

Tj = 25 °C(1) VGS = -2.5 V(2) VGS = -3.0 V(3) VGS = -3.5 V(4) VGS = -4.0 V(5) VGS = -4.5 V

Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values

VGS (V)0 - 6- 4- 2

017aaa305

200

400

600

RDSon(mΩ)

0

(1)

(2)

ID = -1 A(1) Tj = 150 °C(2) Tj = 25 °C

Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values





017aaa306

VGS (V)0 - 3- 2- 1

- 2

- 1

- 3

- 4

ID(A)

0

(1)

(1)

(2)

(2)

VDS > ID × RDSon

(1) Tj = 25 °C(2) Tj = 150 °C

Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

Tj (°C)-60 1801200 60

017aaa307

1.0

1.2

0.8

1.4

1.6a

0.6

Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues

Tj (°C)- 60 1801200 60

017aaa134

- 0.8

- 0.4

- 1.2

- 1.6

VGS(th)(V)

0.0

(1)

(2)

(3)

ID = -0.25 mA; VDS = VGS

(1) maximum values(2) typical values(3) minimum values

Fig. 12. Gate-source threshold voltage as a function ofjunction temperature

017aaa308

VDS (V)-10-1 -102-10-1

102

103

C(pF)

10

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V(1) Ciss

(2) Coss

(3) Crss

Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





017aaa309

QG (nC)0 321

- 2

- 3

- 1

- 4

- 5VGS(V)

0

ID = -1.0 A; VDS = -10 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gatecharge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

017aaa310

VSD (V)0.0 -1.2-0.8-0.4

-1.0

-0.5

-1.5

-2.0

IS(A)

0.0

(1) (2)

VGS = 0 V(1) Tj = 150 °C(2) Tj = 25 °C

Fig. 16. Source current as a function of source-drain voltage; typical values





11. Test information

t1t2

P

t006aaa812

duty cycle δ =

t1

t2

Fig. 17. Duty cycle definition

12. Package outline

04-11-04Dimensions in mm

0.450.15

1.10.8

2.21.8

2.22.0

1.351.15

1.3

0.40.3

0.250.10

1 2

3

Fig. 18. Package outline SC-70 (SOT323)





13. Soldering

solder lands

solder resist

occupied area

solder paste

sot323_fr

2.65

2.35 0.6(3×)

0.5(3×)

0.55(3×)

1.325

1.85

1.33

2

1

Dimensions in mm

Fig. 19. Reflow soldering footprint for SC-70 (SOT323)

sot323_fw

3.65 2.1

1.425(3×)

4.6

09(2×)

2.575

1.8

solder lands

solder resist

occupied area

preferred transportdirection during soldering

Dimensions in mm

Fig. 20. Wave soldering footprint for SC-70 (SOT323)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PMF170XP v.2 20131029 Product data sheet - PMF170XP v.1

Modifications: • Figure 13 corrected

PMF170XP v.1 20110902 Product data sheet - -





15. Legal information

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Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

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Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................511 Test information ................................................... 1012 Package outline ................................................... 1013 Soldering .............................................................. 1114 Revision history ...................................................1215 Legal information .................................................1315.1 Data sheet status ............................................... 1315.2 Definitions ...........................................................1315.3 Disclaimers .........................................................1315.4 Trademarks ........................................................ 14

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 29 October 2013

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