PMEG6002ELD - Nexperia PMEG6002ELD...

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  • PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 5 February 2014 Product data sheet

    1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

    2. Features and benefits • Average forward current: IF(AV) ≤ 0.2 A • Reverse voltage: VR ≤ 60 V • Low forward voltage VF ≤ 600 mV • AEC-Q101 qualified • Solderable side pads • Package height typ. 0.37 mm

    3. Applications • LED backlight for mobile application • Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Low power consumption applications

    4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

    δ = 0.5; f = 20 kHz; Tamb ≤ 130 °C; square wave

    [1] - - 0.2 AIF(AV) average forward current

    δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave

    - - 0.2 A

    VR reverse voltage Tj = 25 °C - - 60 V

    VF forward voltage IF = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 540 600 mV

    IR reverse current VR = 10 V; pulsed; tp ≤ 2 ms; δ ≤ 0.02; Tj = 25 °C

    - 2 10 µA

    [1] Device mounted on a ceramic PCB, Al2O3, standard footprint.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier

    PMEG6002ELD All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 February 2014 2 / 14

    5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

    1 K cathode[1]

    2 A anode

    Transparent top view

    21

    DFN1006D-2 (SOD882D)

    sym001

    1 2

    [1] The marking bar indicates the cathode.

    6. Ordering information Table 3. Ordering information

    PackageType number

    Name Description Version

    PMEG6002ELD DFN1006D-2 DFN1006D-2: leadless ultra small plastic package; 2 terminals SOD882D

    7. Marking Table 4. Marking codes Type number Marking code

    PMEG6002ELD 1111 1010

    VENDOR CODE

    MARKING CODE (EXAMPLE)

    CATHODE BAR READING DIRECTION

    READING DIRECTION

    READING EXAMPLE:

    0111 1011

    006aac477

    Fig. 1. SOD882D binary marking code description

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier

    PMEG6002ELD All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 February 2014 3 / 14

    8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit

    VR reverse voltage Tj = 25 °C - 60 V

    IF forward current Tsp ≤ 140 °C - 0.28 A

    δ = 0.5; f = 20 kHz; Tamb ≤ 130 °C; square wave

    [1] - 0.2 AIF(AV) average forward current

    δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave

    - 0.2 A

    IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 1 A

    IFSM non-repetitive peak forward current

    tp = 8 ms; Tj(init) = 25 °C; square wave - 3 A

    [2] - 370 mW

    [3] - 735 mW

    Ptot total power dissipation Tamb ≤ 25 °C

    [1] - 1090 mW

    Tj junction temperature - 150 °C

    Tamb ambient temperature -55 150 °C

    Tstg storage temperature -65 150 °C

    [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

    footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

    9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit

    [1][2] - - 340 K/W

    [1][3] - - 170 K/W

    Rth(j-a) thermal resistance from junction to ambient

    in free air

    [1][4] - - 115 K/W

    Rth(j-sp) thermal resistance from junction to solder point

    [5] - - 20 K/W

    [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses.

    [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. [5] Soldering point of cathode tab.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier

    PMEG6002ELD All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 February 2014 4 / 14

    aaa-007593

    10-5 1010-210-4 10210-1 tp (s)

    10-3 1031

    102

    10

    103

    Zth(j-a) (K/W)

    1

    duty cycle = 1

    0.75 0.5

    0.33 0.25

    0.2 0.1

    0.05 0.02

    0.01 0

    FR4 PCB, standard footprint

    Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-007595

    10-5 1010-210-4 10210-1 tp (s)

    10-3 1031

    102

    10

    103

    Zth(j-a) (K/W)

    1

    duty cycle = 1

    0.75 0.5

    0.33 0.25

    0.2 0.1

    0.05 0.02

    0.01 0

    FR4 PCB, mounting pad for cathode 1 cm2

    Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier

    PMEG6002ELD All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 February 2014 5 / 14

    aaa-007596

    10-5 1010-210-4 10210-1 tp (s)

    10-3 1031

    102

    10

    103

    Zth(j-a) (K/W)

    1

    duty cycle = 1

    0.75 0.5

    0.33 0.25 0.2

    0.1

    0.05

    0.02

    0.01 0

    Ceramic PCB, Al2O3, standard footprint

    Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

    10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit

    IF = 0.1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 130 170 mV

    IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 190 230 mV

    IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 260 300 mV

    IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 410 470 mV

    VF forward voltage

    IF = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 540 600 mV

    VR = 10 V; pulsed; tp ≤ 2 ms; δ ≤ 0.02; Tj = 25 °C

    - 2 10 µA

    VR = 60 V; pulsed; tp ≤ 2 ms; δ ≤ 0.02; Tj = 25 °C

    - 20 100 µA

    VR = 10 V; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 100 °C

    - 310 - µA

    IR reverse current

    VR = 60 V; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 100 °C

    - 2 - mA

    Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 15 20 pF

    trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C

    - 4.5 - ns

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier

    PMEG6002ELD All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 February 2014 6 / 14

    006aaa765

    1

    10

    102

    103

    IF (mA)

    10- 1

    VF (V) 0 1.00.80.4 0.60.2

    (1) (2) (3) (4) (5)

    (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = −40 °C

    Fig. 5. Forward current as a function of forward voltage; typical values

    006aaa766105IR (µA)

    10- 3

    10- 2

    10- 1

    1

    10

    102

    103

    104

    VR (V) 0 604020

    (1)

    (2)

    (3)

    (4)

    (5)

    (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = −40 °C

    Fig. 6. Reverse current as a function of reverse voltage; typical values

    VR (V) 0 604020

    006aaa767

    10

    20

    30

    Cd (pF)

    0

    f = 1 MHz; Tamb = 25 °C

    Fig. 7. Diode capacitance as a function of reverse voltage; typical values

    aaa-007597

    IF(AV) (A) 0 0.30.20.1

    0.08

    0.12

    0.04

    0.16

    0.20 PF(AV)

    (W)

    0

    (1)

    (2)

    (3)

    (4)

    Tj = 150 °C (1) δ = 0.1; f = 20 kHz (2) δ = 0.2; f = 20 kHz (3) δ = 0.5; f = 20 kHz (4) δ = 1 (DC)

    Fig. 8. Average forward power dissipation as a function of average forward current; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier

    PMEG6002ELD All information provided in this document is subject to legal disclaimers.

    Product data sheet 5 February 2014 7 / 14

    aaa-007598

    VR (V) 0 604020

    0.2

    0.3

    0.1

    0.4

    0.5 PR(AV)

    (W)

    0

    (1)

    (2) (3)