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  • PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier 10 February 2014 Product data sheet

    1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small DFN1608D-2 (SOD1608) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

    2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 20 V • Low forward voltage VF ≤ 450 mV • Low reverse current • AEC-Q101 qualified • Solderable side pads • Package height typ. 0.37 mm • Ultra small and leadless SMD plastic package

    3. Applications • Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • LED backlight for mobile application • Low power consumption applications • Ultra high-speed switching • Reverse polarity protection

    4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

    δ < 0.5; f = 20 kHz; Tsp ≤ 130 °C; square wave

    - - 2 AIF(AV) average forward current

    δ < 0.5; f = 20 kHz; Tamb ≤ 65 °C; square wave

    [1] - - 2 A

    VR reverse voltage Tj = 25 °C - - 20 V

    VF forward voltage IF = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 395 450 mV

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier

    PMEG2020EPK All information provided in this document is subject to legal disclaimers.

    Product data sheet 10 February 2014 2 / 15

    Symbol Parameter Conditions Min Typ Max Unit

    IR reverse current VR = 10 V; Tj = 25 °C - 70 350 µA

    Dynamic characteristics

    trr reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C

    - 5 - ns

    [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

    5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

    1 K cathode[1]

    2 A anode 1 2

    Transparent top view

    DFN1608D-2 (SOD1608)

    sym001

    1 2

    [1] The marking bar indicates the cathode.

    6. Ordering information Table 3. Ordering information

    PackageType number

    Name Description Version

    PMEG2020EPK DFN1608D-2 DFN1608D-2: leadless ultra small plastic package; 2 terminals SOD1608

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier

    PMEG2020EPK All information provided in this document is subject to legal disclaimers.

    Product data sheet 10 February 2014 3 / 15

    7. Marking Table 4. Marking codes Type number Marking code

    PMEG2020EPK 1110 0000

    VENDOR CODE

    MARKING CODE (EXAMPLE)

    CATHODE BAR READING DIRECTION

    READING DIRECTION

    READING EXAMPLE:

    0111 1011

    006aac909

    Fig. 1. SOD1608 binary marking code description

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier

    PMEG2020EPK All information provided in this document is subject to legal disclaimers.

    Product data sheet 10 February 2014 4 / 15

    8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit

    VR reverse voltage Tj = 25 °C - 20 V

    IF forward current Tsp ≤ 125 °C - 2.83 A

    δ < 0.5; f = 20 kHz; Tsp ≤ 130 °C; square wave

    - 2 AIF(AV) average forward current

    δ < 0.5; f = 20 kHz; Tamb ≤ 65 °C; square wave

    [1] - 2 A

    IFRM repetitive peak forward current tp = 1 ms; δ = 0.25 - 4 A

    IFSM non-repetitive peak forward current

    tp = 8 ms; Tj(init) = 25 °C; square wave - 5 A

    [2] - 415 mW

    [3] - 895 mW

    Ptot total power dissipation Tamb ≤ 25 °C

    [1] - 1565 mW

    Tj junction temperature - 150 °C

    Tamb ambient temperature -55 150 °C

    Tstg storage temperature -65 150 °C

    [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

    9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit

    [1][2] - - 300 K/W

    [1][3] - - 140 K/W

    Rth(j-a) thermal resistance from junction to ambient

    in free air

    [1][4] - - 80 K/W

    Rth(j-sp) thermal resistance from junction to solder point

    [5] - - 20 K/W

    [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses.

    [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. [5] Soldering point of cathode tab.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier

    PMEG2020EPK All information provided in this document is subject to legal disclaimers.

    Product data sheet 10 February 2014 5 / 15

    006aad023

    tp (s) 10-3 102 10310110-2 10-1

    102

    103

    Zth(j-a) (K/W)

    10

    duty cycle = 1

    0.75 0.5

    0.33 0.25

    0.2

    0.1

    0.02

    0.010

    0.05

    FR4 PCB, standard footprint

    Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aad024

    tp (s) 10-3 102 10310110-2 10-1

    102

    103

    Zth(j-a) (K/W)

    10

    duty cycle = 1

    0.75 0.5

    0.33 0.25

    0.2 0.1

    0.02 0.010

    0.05

    FR4 PCB, mounting pad for cathode 1 cm2

    Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier

    PMEG2020EPK All information provided in this document is subject to legal disclaimers.

    Product data sheet 10 February 2014 6 / 15

    006aad025

    tp (s) 10-3 102 10310110-2 10-1

    102

    Zth(j-a) (K/W)

    10

    duty cycle = 1

    0.75

    0.5

    0.33 0.25

    0.2 0.1

    0.02 0.010

    0.05

    Ceramic PCB, Al2O3, standard footprint

    Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

    10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit

    IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 230 260 mV

    IF = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 290 330 mV

    IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 330 380 mV

    VF forward voltage

    IF = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

    - 395 450 mV

    VR = 10 V; Tj = 25 °C - 70 350 µAIR reverse current

    VR = 20 V; Tj = 25 °C - 220 900 µA

    VR = 1 V; f = 1 MHz; Tj = 25 °C - 105 120 pFCd diode capacitance

    VR = 10 V; f = 1 MHz; Tj = 25 °C - 40 50 pF

    Dynamic characteristics

    trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C

    - 5 - ns

    VFRM peak forward recovery voltage

    IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 320 - mV

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier

    PMEG2020EPK All information provided in this document is subject to legal disclaimers.

    Product data sheet 10 February 2014 7 / 15

    006aad026

    VF (V) 0.0 0.60.40.2

    10-2

    10-3

    1

    10-1

    10 IF (A)

    10-4

    (1)

    (2)

    (3) (4) (5)

    (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = −40 °C

    Fig. 5. Forward current as a function of forward voltage; typical values

    006aad02710-1

    10-2

    10-3

    10-4

    10-5

    10-6

    10-7

    IR (A)

    10-8

    VR (V) 0 20155 10

    (1)

    (2)

    (3)

    (4)

    (1) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 25 °C (4) Tj = −40 °C

    Fig. 6. Reverse current as a function of reverse voltage; typical values

    VR (V) 0 20155 10

    006aad028

    100

    50

    150

    200

    Cd (pF)

    0

    f = 1 MHz; Tamb = 25 °C

    Fig. 7. Diode capacitance as a function of reverse voltage; typical values

    006aad072

    IF(AV) (A) 0 321

    0.4

    0.8

    1.2

    PF(AV) (W)

    0

    (1)

    (2)

    (3)

    (4)

    Tj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1

    Fig. 8. Average forward power dissipation as a function of average forward current; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier

    PMEG2020EPK All information provided in this document is subject to legal