Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

1Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

Piezoelectric field-effect transistor for force and tactile

sensor applicationsH. Winterfeld1, L. Thormählen2, H. Lewitz2, E. Yarar2, T. Birkoben1, N. Niethe1,

A. Petraru1, N. Preinl1, H. Hanssen3, E. Quandt2 and H. Kohlstedt1

1Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, 24143 Kiel, Germany2Inorganic Functional Materials, Technische Fakultät, Christian-Albrechts-Universität zu Kiel,24143 Kiel, Germany3Fraunhofer-Institut für Siliziumtechnologie,25524 Itzehoe, Schleswig-Holstein, Germany

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

2Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

http://mindtrans.narod.ru/hands/pictures/Smart_Motor_Hand.JPGDownloaded: 20.03.2019

P. Regtien, Sensors for Mechatronics, Elsevier (2012)

Kappassov et al., Elsevier, 74 (2015)

Piezoelectric

Piezoresistive Capacative

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

3Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

p-type silicon

Sourcen+

Drainn+

SeedlayerOxide

Gate

Piezoelectric Layer

Pt

AlN

PtSiO2

F

I

Piezoelectric Field-Effect Transistor

Winterfeld et al., J. Mater Sci.: Mater Electron (2019)Yarar et al., AIP Adv. (2016)

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

4Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

p-type silicon

Sourcen+

Drainn+

SeedlayerOxide

Gate

Piezoelectric Layer

Pt

AlN

PtSiO2

F

I

Piezoelectric Field-Effect Transistor

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

5Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

! = #ℎ%12 ()*+ =

,-%3/!

)1+ = ,×(- − 5 67,+ =#ℎ96

;+ =1+67,+

moment of inertia deflection moment of bending section modulus

stress

L

b

h

point of clamping

F

Position of

transistor

on cantilever

x

Theoretical approach:

Wu et al., Appl. Phys. Let. 85, 7 (2004)

(Pa)

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

6Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

p-type silicon

Source Drain

Piezoelectric Layer

p-type silicon

Source Drain

PtAlNPt

SiO2

Piezoelectric sample Referenz sample

F

Chargecompensation

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

7Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

forc

e (N

)

time

0.34

0.67

1.00

0

F

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

8Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

VG

VD

Lock-InAmplifier

magnet

cantilever

electromagnetwith steel core

1 MΩ

Function Generator

Frequency sync

Excitation signal:

0

16.5

forc

e (m

N)

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

9Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

AlN

VG ΔI

Transfer

Yarar et al., AIP Adv. (2016)

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

10Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

VG

AlN

VG ΔI

Transfer

Fichtner et al., J. Appl. Phys. (2017)Yarar et al., AIP Adv. (2016)

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications

11Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric

Thank you for your attention!

Furthermore, I would like to thank the DFG for their financial support in RU 2093 and

CRC 1261.Winterfeld et al., J. Mater Sci.: Mater Electron (2019)