Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A =...
Transcript of Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A =...
![Page 1: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/1.jpg)
1
Photomask Technology Challenges at the 45nm Node
Patrick Martin
![Page 2: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/2.jpg)
2
Mask Materials and Infrastructure
![Page 3: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/3.jpg)
3
Significance of 193nm Immersion to Mask Making
Materials Engineering
nki)k(nne 2222~~ +−==
λπkd
eRODonTransmissi4
)1(10−
−=−=
∆φ = (2π / λ)(ni-1) t
( )22
1min
NAk
DOF
NAk
R
λ
λ
=
=
![Page 4: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/4.jpg)
4
Significance of 193nm Immersion to Mask Making
Fused SiO2Low Birefringence
Absorber
ARC (Reflectivity)
Pellicle
193nm WetλAttribute
157nm (Dry)
193nm Dry
Attenuator (PSM)Variable T%
Substrate Fused SiO2Low Birefringence
F2 Doped
Chrome,Other
Fused SiO2
TBD %
Chrome,Other
MoSi,Other
<5%15 – 20 %
Organic
SiON + MNMoSi,Other
Chrome
Fused SiOrganic
Avoidance: Process Development/Integration of 157nmOpportunity: Material Properties for Immersion
![Page 5: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/5.jpg)
5
Limiting Industry Trends
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Nor
mal
ized
Inde
x
130nm
90nm
65nm
45nm Est
Mask Unit
# of SemiconductorCompanies
ASIC Design Starts
Development cycles are accelerating, but everything elseis going in the wrong direction!!! Source: Dataquest
Photronics estimate
![Page 6: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/6.jpg)
6
Cost Drivers
![Page 7: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/7.jpg)
7
Equipment
Repair and Disposition
Inspection
Write Platform
No Known Solution
![Page 8: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/8.jpg)
8
Impact of Model-Based OPC
§ Nominal design is shaded.§ OPC version is fractured into rectangles.§ Up to 10× increase in shape count when OPC applied.§ Several hundred billion geometries on mask at 100 nm node.
![Page 9: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/9.jpg)
9
Vector Tool Write Time ImpactD
esig
nV
ecto
r
Model-Based OPCRule-Based OPCNo OPC
12 Shots 27 Shots2 Shots
![Page 10: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/10.jpg)
10
Write Time vs. Complexity
§ A 90nm device with very aggressive OPC can take up to 20 hrs to write on a $15 million E-beam tool.
0
100
200
300
400
500
600
Via(Optical)
Contact(EB)
Metal (EB)
Active(EB)
Gate (EB)
Wri
te T
ime
(min
ute
s)
130nm90nm65nm
![Page 11: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/11.jpg)
11
# Layers by Stepper Wavelength
0
5
10
15
20
25
30
35
40
45
DRAM Logic
193nm/193i248nmi-line
180nm130nm 110nm
90nm
65nm
180nm 130nm
90nm
65nm
Lay
ers
![Page 12: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/12.jpg)
12
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
B1 B2 B3 B4 B5 B6 B7 B8 B8 E1 E2 E3 A1 A2 C1Product Type
No
rmal
ized
Pri
ce
Cost vs. Complexity
180nm
130nm
90nm
Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL
65nm
130nm
90nm
90nm
65nm
No OPC, 248nm Mild OPC, 193nm Aggressive OPC, 193nm
![Page 13: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/13.jpg)
13
Mask Cost for 45nmØ General Assumptionsü 193nm wet compared to 157nm dry
§ 193nm Dry Not Capable of 45nm
ü 7 year depreciation model on cap ex of ~70 M$ü Single Line, No Redundancyü 3 layer AAPSM, 12 layer EAPSM, 22 Layer BIMü First three years of engagement (not mature)
ü Moderate OPC, k1 ≤ 0.35 on critical layersü 8 customers total, 3 captiveü 12 Tape Outs
2.5 – 3.5 x/90nm Set
![Page 14: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/14.jpg)
14
Mask Cost is only 8% of the Overall Problem
Wafers1%
Boards2% Masks
8%
Software28%
Apps3%
Test Engineering
7%
Product Engineering
12%
I/O Design5%
Logic Design34%
Source: Synopsys, Altera, 90nm Node
The only way to bring the development cost down is to have all involved work together.
![Page 15: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/15.jpg)
15
Integrating the Lithography Plane(ILP)
Electrical Design
Design Layout
Mask Build
Do over !
Wafer Build Is it OK ?
$$$$ wasted assilicon piles up on the floor
![Page 16: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/16.jpg)
16
0
0.5
1
1.5
2
2.5
3
4X 180nm 4X 90nm 8X 90nm
No
rmal
ized
Mas
t S
et C
ost
(1)
EAPSM 193nmBinary 193nmEAPSM 248nmBinary 248nmBinary 365nm
Increase Magnification, Reduce Field Size
§ If magnification increases to 8X, current 180nm process and tool set can be used for 90nm production.
+ 7X+ 3X
![Page 17: Photomask Technology Challenges at the 45nm Node · · 2010-01-25Code: B = Binary, E = EAPSM, A = AAPSM, C = CPL 65nm 130nm 90nm 90nm 65nm No OPC, 248nm Mild OPC, 193nm Aggressive](https://reader031.fdocuments.net/reader031/viewer/2022022009/5af29f317f8b9ad06190f0bb/html5/thumbnails/17.jpg)
17
Summary
§ Advantages of 193nm Immersion Lithography§ Single Wavelength Solution through 2009§ Simplification of Materials; blank and pellicle§ Simplification of Internal Process Development
and Integration§ Overall Cost Benefit vs. 157nm Dry
§ Opportunity§ Integration with Design and Reticle Enhancement
Technology is Key to Cost Minimization§ Small Field § Higher Magnification, 4x – 8x reduction ratio§ Reduced Field Size