PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V,...

18
PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description NPN low V CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High collector current gain (h FE ) at high I C High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base - - 30 V I C collector current - - 3 A I CM peak collector current single pulse; t p ≤ 1 ms - - 5 A R CEsat collector-emitter saturation resistance I C = 3 A; I B = 300 mA; pulsed; t p ≤ 300 µs; δ ≤ 0.02; T amb = 25 °C - 75 100

Transcript of PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V,...

Page 1: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor11 September 2014 Product data sheet

1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5330PAS

2. Features and benefits• Low collector-emitter saturation voltage VCEsat• High collector current capability IC and ICM• High collector current gain (hFE) at high IC• High efficiency due to less heat generation• High temperature applications up to 175 °C• Reduced Printed-Circuit Board (PCB) area requirements• Leadless small SMD plastic package with soldarable side pads• Exposed heat sink for excellent thermal and electrical conductivity• Suitable for Automatic Optical Inspection (AOI) of solder joint• AEC-Q101 qualified

3. Applications• Loadswitch• Battery-driven devices• Power management• Charging circuits• Power switches (e.g. motors, fans)

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VCEO collector-emittervoltage

open base - - 30 V

IC collector current - - 3 A

ICM peak collector current single pulse; tp ≤ 1 ms - - 5 A

RCEsat collector-emittersaturation resistance

IC = 3 A; IB = 300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- 75 100 mΩ

Page 2: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 2 / 18

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 B base

2 E emitter

3 C collector

Transparent top view

1 2

3

DFN2020D-3 (SOT1061D)

sym021

3

2

1

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PBSS4330PAS DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outlinepackage; no leads; 3 terminals; body 2 x 2 x 0.65 mm

SOT1061D

7. MarkingTable 4. Marking codesType number Marking code

PBSS4330PAS E1

Page 3: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 3 / 18

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 30 V

VEBO emitter-base voltage open collector - 6 V

IC collector current - 3 A

ICM peak collector current single pulse; tp ≤ 1 ms - 5 A

IB base current - 500 mA

[1] - 600 mW

[2][3] - 1.2 W

[4] - 1.5 W

Ptot total power dissipation Tamb ≤ 25 °C

[5][6] - 2.5 W

Tj junction temperature - 175 °C

Tamb ambient temperature -55 175 °C

Tstg storage temperature -65 175 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.[6] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.

Page 4: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 4 / 18

Tamb (°C)-75 22512525

aaa-013298

1

2

3

Ptot(W)

0

(1) + (2)

(3)

(6)

(4) + (5)

(1) Ceramic PCB, single-sided copper, standard footprint

(2) FR4 PCB, 4-layer copper, 1 cm2

(3) FR4 PCB, single-sided copper, 6 cm2

(4) FR4 PCB, single-sided copper, 1 cm2

(5) FR4 PCB, 4-layer copper, standard footprint(6) FR4 PCB, single-sided copper, standard footprint

Fig. 1. Power derating curves

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - - 250 K/W

[2][3] - - 125 K/W

[4] - - 100 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air

[5][6] - - 60 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.[6] Device mounted on a FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.

Page 5: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 5 / 18

006aab979

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.010.02

0.050.1

0.20.33

0.50.75

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values006aab980

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.010.02

0.050.1

0.20.33

0.50.75

FR4 PCB, mounting pad for collector 1 cm2

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Page 6: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 6 / 18

006aac000

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.010.02

0.050.1

0.20.33

0.50.75

FR4 PCB, mounting pad for collector 6 cm2

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-013299

10

1

102

103

Zth(j-a)(K/W)

10-110-5 1010-210-4 10210-1

tp (s)10-3 1031

duty cycle = 10.75

0

0.500.33

0.200.10

0.050.02

0.01

FR4 PCB, 4-layer copper, standard footprint

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Page 7: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 7 / 18

aaa-013300

10

1

102

Zth(j-a)(K/W)

10-110-5 1010-210-4 10210-1

tp (s)10-3 1031

duty cycle = 1

0

0.20

0.10

0.050.02

0.01

0.75

0.330.50

FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2

Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values006aab982

10- 5 1010- 210- 4 10210- 1tp (s)

10- 3 1031

10

1

102

Zth(j-a)(K/W)

10- 1

0

duty cycle = 1

0.010.02

0.05

0.1

0.20.33

0.50.75

Ceramic PCB, Al2O3, standard footprint

Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Page 8: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 8 / 18

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

VCB = 24 V; IE = 0 A; Tamb = 25 °C - - 100 nAICBO collector-base cut-offcurrent VCB = 24 V; IE = 0 A; Tj = 150 °C - - 50 µA

ICES collector-emitter cut-offcurrent

VCE = 24 V; VBE = 0 V; Tamb = 25 °C - - 100 nA

IEBO emitter-base cut-offcurrent

VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA

VCE = 2 V; IC = 0.5 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

300 465 -

VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C

270 435 700

VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C

230 370 -

hFE DC current gain

VCE = 2 V; IC = 3 A; pulsed; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C

180 310 -

IC = 0.5 A; IB = 50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- 40 60 mV

IC = 1 A; IB = 50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- 80 110 mV

IC = 2 A; IB = 100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- 155 220 mV

VCEsat collector-emittersaturation voltage

- 220 300 mV

RCEsat collector-emittersaturation resistance

IC = 3 A; IB = 300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - 75 100 mΩ

IC = 2 A; IB = 100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- 0.95 1.1 VVBEsat base-emitter saturationvoltage

IC = 3 A; IB = 300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- 1.07 1.2 V

VBEon base-emitter turn-onvoltage

VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C

- 0.76 1 V

td delay time - 11 - ns

tr rise time - 52 - ns

ton turn-on time - 63 - ns

ts storage time - 230 - ns

tf fall time - 40 - ns

toff turn-off time

VCC = 9 V; IC = 2 A; IBon = 0.1 A;IBoff = -0.1 A; Tamb = 25 °C

- 270 - ns

Page 9: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 9 / 18

Symbol Parameter Conditions Min Typ Max Unit

fT transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz;Tamb = 25 °C

100 210 - MHz

Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

- 21 30 pF

006aac044

400

200

600

800

hFE

0

IC (mA)10- 1 1041031 10210

(1)

(3)

(2)

VCE = 2 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 8. DC current gain as a function of collectorcurrent; typical values

VCE (V)0.0 2.01.60.8 1.20.4

006aac045

2.0

3.0

1.0

4.0

5.0IC(A)

0.0

IB (mA) = 25

17.5

12.5

7.5

2.5

20

22.5

5

10

15

Tamb = 25 °C

Fig. 9. Collector current as a function of collector-emitter voltage; typical values

Page 10: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 10 / 18

006aac046

0.4

0.8

1.2

VBE(V)

0.0

IC (mA)10- 1 1041031 10210

(1)

(3)

(2)

VCE = 2 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 10. Base-emitter voltage as a function of collectorcurrent; typical values

006aac047

0.6

0.8

0.4

1.0

1.2VBEsat

(V)

0.2

IC (mA)10- 1 1041031 10210

(1)

(3)

(2)

IC/IB = 20(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 11. Base-emitter saturation voltage as a function ofcollector current; typical values

006aac048

10- 1

10- 2

1

VCEsat(V)

10- 3

IC (mA)10- 1 1041031 10210

(1)

(2)

(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 12. Collector-emitter saturation voltage as afunction of collector current; typical values

006aac049

10- 1

10- 2

1

VCEsat(V)

10- 3

IC (mA)10- 1 1041031 10210

(1)

(3)

(2)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 13. Collector-emitter saturation voltage as afunction of collector current; typical values

Page 11: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 11 / 18

006aac050

IC (mA)10- 1 1041031 10210

10- 1

1

10

102

RCEsat(Ω)

10- 2

(1)(2)

(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 14. Collector-emitter saturation resistance as afunction of collector current; typical values

IC (mA)10- 1 1041031 10210

006aac051

1

10- 1

102

10

103

RCEsat(Ω)

10- 2

(1)

(3)

(2)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 15. Collector-emitter saturation resistance as afunction of collector current; typical values

Page 12: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 12 / 18

11. Test information

006aaa003

IBon (100 %)

IB

input pulse(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

IC

tdton

90 %

10 %

tr

output pulse(idealized waveform)

tf

t

tstoff

Fig. 16. BISS transistor switching time definition

RC

R2

R1

DUT

mlb826

Vo

RB(probe)450 Ω

(probe)450 Ω

oscilloscope oscilloscope

VBB

VI

VCC

Fig. 17. Test circuit for switching times

11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

Page 13: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 13 / 18

12. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT1061D - - -

sot1061d_po

14-03-1114-03-12

Unit

mmmaxnommin

0.65 0.04 2.1

1.9

1.6

1.4

2.1

1.9

1.1

0.9

0.3

0.2

0.45

0.350.05

A(1)

Dimensions (mm are the original dimensions)

Note1. Dimension A is including plating thickness

DFN2020D-3: plastic thermal enhanced ultra thin small outline package; no leads;3 terminals; body 2 x 2 x 0.65 mm SOT1061D

A1 bp

0.35

0.25

D D1 E E1 e

1.3

e1 Lp v

0.1

y y1

0.05

0 1 2 mm

scale

pin 1index area

pin 1index area

A BD

E

bp A Bv

e1 2

3

C

yCy1

detail X

A

A1

X

D1

e1

Lp

solderable leadend, protrusionmax. 0.02 mm (3x)

visible depend uponused manufacturingtechnology (6x)

E1

Fig. 18. Package outline DFN2020D-3 (SOT1061D)

Page 14: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 14 / 18

13. Soldering

0.25

SOT1061DFootprint information for reflow soldering of DFN2020D-3 package

sot1061d_fr

occupied area

solder paste

solder resist

solder lands

Issue date

Dimensions in mm

14-03-0514-03-12

0.5 (2x)

0.5 (2x)

0.251

0.35 0.35 0.35

1.1 1.2

0.7 (2x)0.6 (2x)

2.1

1.7

1.3

0.4 (2x)

0.3 (2x)

0.3

0.250.30.351.1

2.32.5

0.4

0.5

1.5

1.6

1.7

Fig. 19. Reflow soldering footprint for DFN2020D-3 (SOT1061D)

Page 15: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 15 / 18

14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PBSS4330PAS v.1 20140911 Product data sheet - -

Page 16: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 16 / 18

15. Legal information

15.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

15.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

15.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

Page 17: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 17 / 18

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

15.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

Page 18: PBSS4330PAS - NexperiaPBSS4330PAS rw5iwcPs 8).) x6f) Soo cPNEt, cw,wcVwB Nexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor All information provided in this document is

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4330PAS All information provided in this document is subject to legal disclaimers.

Product data sheet 11 September 2014 18 / 18

16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................811 Test information ................................................... 1211.1 Quality information ............................................. 1212 Package outline ................................................... 1313 Soldering .............................................................. 1414 Revision history ...................................................1515 Legal information .................................................1615.1 Data sheet status ............................................... 1615.2 Definitions ...........................................................1615.3 Disclaimers .........................................................1615.4 Trademarks ........................................................ 17

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 11 September 2014