Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Detector Characteristics.

12
Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Detector Characteristics
  • date post

    22-Dec-2015
  • Category

    Documents

  • view

    215
  • download

    1

Transcript of Patrick Spradlin, SCIPP trip to LLU, May 2, 2001 Detector Characteristics.

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Detector Characteristics

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Detector Details

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Vital Statistics

• Overall detector area: 6.4 cm by 6.4 cm• Wafer thickness: 400 m• Silicon: n-type substrate, p-type strips• Large substrate resistivity: 5-8 k• Number of strips: 320• Strip pitch: 194 m• Strip width: 50 m• AC coupled strip readout

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Some Considerations in Estimating Energy from TOT

• Detector: Energy deposited => Charge Q in detector– Landau Distribution of deposited energy

– Shot noise

• Preamplifier and Front End Electronics– Threshold Calibration

– Charge Saturation: plateau in TOT vs. Input charge response

• Controller and Readout => TOT• Estimated charge Q => Estimated particle energy

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Landau Energy Deposition, 400 m thick detector

0

0.02

0.04

0.06

0.08

0.1

0.12

0 10000 20000 30000 40000 50000 60000

Deposited Charge (fC)

Pro

bab

ility

/222

.5 f

C

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Inte

grat

ed P

rob

abili

ty

30 MeV

25 MeV

20 MeV

15 MeV

35 MeVIntegrated Probability

Curves

Binned DistributionCurves

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Landau Energy Deposition, 300 m thick detector

0

0.02

0.04

0.06

0.08

0.1

0.12

0 10000 20000 30000 40000 50000 60000

Deposited Charge (fC)

Pro

ba

bil

ity

/22

2.5

fC

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Inte

gra

ted

Pro

ba

bil

ity

30 MeV diff

25 MeV diff

20 MeV diff

15 MeV diff

35 MeV

Integrated ProbabilityCurves

Binned DistributionCurves

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Deposited Charge vs. Energy of Incident Proton*

0

10000

20000

30000

40000

50000

60000

70000

80000

10 15 20 25 30 35 40

Proton Energy (MeV)

Ma

xim

um

Lik

elih

oo

d D

epo

site

d C

ha

rge

(fC

)

400 um thicknes

300 um thickness

*Based on Monte Carlo Simulation

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Leakage Current

• Possible source of detector noise– Minimized with care. Usually a small noise

source– Shot noise. Mainly affects long shaping time.

• Temperature dependence:– Leakage current doubles for each 7°C rise in

detector temperature

• Bias voltage dependence:– Illustrated on following chart

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

I-V Characteristics

HKM Factory Data, Detector 312.Factory Data for other 3 detectors

similar.25°C

SCIPP Data, Apr. 25, 200124°C

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Energy DepositionComparison of Landau distribution (theoretical line)

with ToT data from GLAST

Patrick Spradlin, SCIPP trip to LLU, May 2, 2001

Two MIP EventsComparison of theoretical and observed energy depositionfor possibility of 2 tracks passing through the same strip