Thermal-Driven 3D Floorplanning using Localized TSV Placement
Open TSV technology for 3D sensor applications - · PDF fileOpen TSV technology for 3D sensor...
Transcript of Open TSV technology for 3D sensor applications - · PDF fileOpen TSV technology for 3D sensor...
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Confidential © ams AG 2015
Open TSV technology for 3D sensor
applications
J Siegert, F Schrank, J Kraft, T Bodner, K Rohracher, S Jessenig, B Löffler, M Schrems
Chemnitz, 23 Jun 2015
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Confidential © ams AG 2015
Agenda
Introduction / Motivation
TSV concept at ams
Applications
Outlook / Conclusions
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Confidential © ams AG 2015
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World of SensorsProviding a seamless human-machine interface for a richer and more intuitive user experience
Communications & Consumer
• Ambient light, color &
proximity sensing
• Gesture recognition
• NFC based contactless
payment solutions
• Active noise cancellation
• Power management
solutions
• Safety systems
• Battery management
• Position sensing
• Comfort & chassis
sensors
• Advanced driver
assistance
Environment
• Lightning sensors
• Chemical Sensors
• Seismic analysis
• Temperature sensors
• Day light harvesting
Industrial
• Industrial/building automation
• Motion control
• Heat, Ventilation &
Air conditioning (HVAC))
• Position sensing
• Digital x-ray
• Computed Tomography
• Surgical Robots
• Diagnostic equipment
Medical
Automotive
Health/Fitness
• Diabetes management
• Heart rate monitors
• Medication tracking
• Activity trackers
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Sensors and Smart SystemsSensors and ICs make systems smart
Smart system block diagram Examples
Wearable/Fitness
Smart Watch
Smart Phone
Smart Home
…
Smart Everything!
Power Management Energy Harvesting & Storage
Memory & Software
Wireless
Receivers
Sensors Actuators
Wireless
Transmitters
InterfacesInterfaces
Data
Processing
µ
Controller
Source: M.Schrems et al., 3D TSV Summit (2015)
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Sensor integration options
ICsensor
sensor
ICTSV+bump
sensor
ICTSV+bump
W2W D2W
sensor SoC
sensor
IC
TSV+bumpSoC
• SoC with TSV and RDL
• Integration by W2W bonding for matched
sensor and IC die sizes and D2W stacking
• Integration by D2W bonding if the IC die size is
larger than sensor die size
• Form factor reduction
• Performance advantages
• System cost reduction
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3D integrated miniaturized smart system
Actuators
SensorsIntegrated CircuitWireless, Memory, ,
µC, Power Mgmt,
Passives....
3D
Through Silicon Via (TSV)
Wafer Level Package (WLP) including Bumping
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Confidential © ams AG 2015
Agenda
Introduction / Motivation
TSV concept at ams
Applications
Outlook / Conclusions
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Confidential © ams AG 2015
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ams AG versatile open TSV integration concepts
sensor
CMOS
CMOS
RDL
W2W based concept
(3D)
SoC and D2W compatible concept
(2.5D, passive/active interposer)
bump bump
TSV TSV
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CMOS wafer
CMOS wafer thinning and bonding
TSV formation
Metallization (topography)
Passivation
Handling wafer removal
Bumping, dicing
Process flows outlines
CMOS wafer with embedded sensor
CMOS bonding and thinning
TSV formation
Metallization (topography)
Passivation
Handling wafer removal
Bumping, dicing
Sensor wafer (SOI)
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2.5D optical sensorActive interposer
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Permanent handling wafer bonding
CSAM of conventional HW bond CSAM with optimized stepper shot map
Topics of direct bonding development
• Bond oxide CMP optimization
• Optimization of stepper shot map
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Impact of bond voids on TSV
CSAM with micro voids Microscope image of CMOS
front side after HW removal
Even small voids <0.25 mm² can cause TSV damages
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Wafer thinning and edge trimming
• Thin wafer has a sharp edge protection during handling
required
• Thin wafer must be smaller than handling wafer edge
trimming
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TSV DRIE development
SEM cross section
low undercut
low roughness
no notching
• AR 2.5:1
• Stop on oxide
• Sidewall
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TSV clean
• Clean TSV sidewalls/bottom critical for layer adhesion
• High topography structures: Conventional methods
inefficient
Bosch process Isolation etch Metal etch
SiSiO2
TiN/Al
SiO2/SiN
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Lithography
Options for lithography (resist coating) on high topography
wafers include
• Dry film lamination
• Nanospray/Spray coating
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Open TSV layer stack
Dielectric (SiO2)
TSV metallization (W)
Passivation (SiN/SiO2)
RDL metallization (AlCu)
Dielectric (SiO2)
TSV metallization (W)
Passivation (SiN/SiO2)
ILD
Metal 1
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Electrical characterization
TSV resistance
avg = 0.43 OhmTSV leakage < 1 nA
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Confidential © ams AG 2015
Agenda
Introduction / Motivation
TSV concept at ams
Applications
Outlook / Conclusions
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Confidential © ams AG 2015
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3D integrated photo sensor IC product example
80µm
200µm
TSV
IC
sensor
solder bumpUltra low-noise circuitry
80% less energy consumption
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2.5D integrated optical sensor IC product example
Source: F. Schrank et al., Minapad 2015
TSV
IC + sensor
metal layer
bump
Extend battery life
Reduce system
power consumption
Improve display
Picture quality
Reduced
consumer
energy and
usage
Global
energy
consumption
Reduced
global
carbon
footprint
of a system’s power
consumption comes
from the display
Ambient light sensors
can reduce overall
power consumption by
Source: M. Schrems et al., ESSDERC 2014
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3D chemical sensor ICs with TSV
• Sensor architecture
• Gas-sensing metal oxide layer
• Micro-hotplate (µHP)
• Temperature control
• Readout circuit
• TSV interconnects
• System-On Chip
• CMOS process
Source: A.Nemecek et al., Semicon Europe 2014, FHWN, ams AG, AIT, MCL
gas flow
gas sensor
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3D chemical sensor ICs with TSV contd.
Source: A.Nemecek et al., Semicon Europe 2014, FHWN, ams AG, AIT, MCL
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Si Interposer with optical and electrical TSVs
Source: T.Tekin, EU FP7 PhoxTroT – Semicon West 2014 (FhG, ams AG)
WG
PCB
Si interposer
VCSEL PD Driver > 10 GHz TIA > 10 GHz
Electrical TSVOptical TSVs
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Confidential © ams AG 2015
Agenda
Introduction / Motivation
TSV concept at ams
Applications
Outlook / Conclusions
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Outlook – TSV shrink
• TSV last with increased AR to 5:1
• Challenges:
• DRIE
• Deposition
• Cleaning
SEM of cross section
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Conclusion
• Open TSV AR 2.5:1 (100 µm and 80 µm diameter)
• Versatile process flow for TSV and RDL established
• Maturity of technology proven with electrical data
• First results of TSV shrink to AR 5:1
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Acknowledgement
• Entire ams AG project team
• EPPL “Enhanced Power Pilot Line” project co-funded by the
ENIAC Joint Undertaking under the ENIAC JU Grant
Agreement n. 325608
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Confidential © ams AG 2015
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