On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm...
Transcript of On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm...
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On the Design of an Antenna Switch in 28 nm FD-SOI CMOS
Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping, Sweden
Ted Johansson Linköping University, Linköping, Sweden
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Introduction and Outline2
• EU project within ECSEL• Support ST Microelectronics with
demonstrations of feasibility of FD-SOI• Evaluations not yet finished
• 28 nm FD-SOI (UTBB)• Antenna switch design and consideration• Results from on-going work
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UTBBvs.bulkCMOS
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28 nm FD-SOI (STM)
Lg=24 nm, Tox=1.8 nm, Vsup=1.0 Vultra-thin silicon: 7 nmultra-thin buried oxide: 25 nm
High-k dielectricMetal-gate electrodeS/D: epitaxy raisedUndoped channelBulk/SOI integration
”High-voltage” design:Lg=150 nm, Tox=2.8 nm, Vsup=1.8 V (+10 %)
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Limitations on the maximum voltage5
• Conventional bulk CMOS: many possible diode breakdowns to well and substrate.
• Scaled bulk CMOS: breakdowns approaching 4-5 V.• SOI: reduced problems with breakdown to the substrate,
possible to stack components.
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• Broadband LNA• Capacitive feedback
LNA• Passive double
balanced resistive FET mixer
• LO distribution network
• PA core• RF switch
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Design of RF-blocks on FD-SOI
BPF
BPF
LNA LPFADC
PADACHPF
LO
DSP
Antenna
T/RSwitch
Mixer
Mixer
GenericTDDradiofront-end
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Test chip = 1.5 x 2.2 mm2
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RF antenna switch (SPDT)8
• 30 dBm• 50 Ohm• IL < 1 dB• Isolation > 30 dB• IM3 < -50 dBc• f = 1.9 GHz• 28 nm FD-SOI
CMOS
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• 30dBm@50Ohm=>10Vp
• 6stackedtransistors(1.8V+10%),W/L=1mm/150nm
Switch design in Cadence9
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Pin = 30 dBm
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By adding capacitors between the blocks, better phase balance was achieved
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By adding capacitors between the blocks, better phase balance was achieved
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PCBdesigninADS
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Chipandtestboard,readyformeasurements
• Currentlyunderevaluation
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Problemwithtie-downdiodes15
• Tie-downdiodelimitsmaximumpower(voltage). Voltagepeakswillcausediodetoopentosubstrate.
• Teststructurespecific,notinintegratedswitch.
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www.liu.se
This work has been performed as part of the ECSEL (formerly ENIAC) Joint Undertaking project PLACES2BE, funded in Sweden by VINNOVA and
ECSEL JU