October 6, 2000 - SEMATECH · October 6, 2000 Dear NGL Workshop ... X-Ray, EPL, and IPL — for the...

October 6, 2000 Dear NGL Workshop Participants: It was our pleasure to have had the opportunity to work with you in assessing the status of the NGL technologies — EUV, X-Ray, EPL, and IPL — for the 70nm-50nm nodes and below. As a result of your participation and cooperation, the Workshop met its objectives of 1) achieving a better understanding throughout the industry of the NGL issues and potentials, 2) providing an industry recommendation on a narrowed set of options that International SEMATECH should support in 2001, and 3) building a greater industry consensus on the NGL options. Enclosed on a CD-ROM (which contains bookmarks) is the Final Report resulting from the Workshop and the follow-on Task Force meeting. The key outputs from these meetings are:

1. The surveys reconfirmed the results of the 1999 NGL Workshop. - ISMT should continue to support the development of two technologies in 2001

. . . EUV and EPL. - The possibility remains that the industry will need both EUV and EPL for the

unique applications of DRAM and ASIC

2. The NGL Task Force recommended that the industry in general narrow its support for commercialization to EUV and EPL. This conclusion was reached in the review of the critical issues when it was decided not to create new issues for X-Ray and IPL.

3. EUV and EPL suppliers are targeting insertion at the 70nm node with accelerated schedules.

4. Confidence continues to grow in extending optics, with 193nm at the 100nm node and 157nm at the 70nm node.

5. The top preferences at the ITRS nodes are:

100nm: 193nm optical and 157nm optical 70nm: 157nm optical, EPL, and EUV 50nm: EUV and EPL 35nm: EUV

In addition, the Task Force provided the following advice:

1. ISMT should fund more than one EPL mask format. 2. It is necessary for EPL to standardize on a single mask format (stencil vs. membrane). 3. EUV/EPL beta tools are needed as early as 2003. 4. The 70nm node (1st year of production) will happen by 2005. 5. Maskless lithography should be included in the next Workshop.

The Final Report contains: PAGE #

1) Workshop Purpose and Demographics………………………………………………………………….… 3 - 4 2) Key Survey Results……………………………………………………………………………………………………… 5 - 10 3) Full Workshop (General Session) Survey Results………………………………………………… 11 - 26 4) Historical Workshop Survey Trends …………………………………………………………………….. 27 - 34 5) Full Task Force Survey Results ……………………………………………………………………………… 35 - 48 6) Task Force Meeting Questions ………………………………………………………………………………. 49 - 114 7) Addendum with Workshop Agenda and Attendees, Task Force Agenda and

Attendees, and International SEMATECH Press Release………………………………. 115 - 125 As a result of the Workshop and Task Force meetings, International SEMATECH will develop funding proposals to present to our advisory groups this quarter. Also we will continue our efforts in facilitating the worldwide industry consensus building process for Next Generation Lithography. A fifth NGL Workshop will be organized for September 2001 focusing on EUV and EPL with updates on other NGL options. On behalf of International SEMATECH, I would like to express our thanks to you, the participants, for your outstanding support and valued input to the process. We also extend our sincere appreciation to the Technology Champions and their teams for the extraordinary effort in preparing for this Workshop and making it so successful. We look forward to your continued support and collaboration in 2001. Sincerely, John Canning Program Manager, Next Generation Lithography CC: Gerhard Gross

Rinn Cleavelin Mark Melliar-Smith International SEMATECH NGL Steering Committee International SEMATECH Program Advisory Group International SEMATECH Executive Steering Council USA Lithography TWG International Lithography TWG

Workshop Purpose and Demographics

3

i:\litho\013\ngl workshop 2000\NGL WS output book.ppt

Fourth NGL Workshop(September 25-26, 2000 - Reston, Virginia)

Purpose• Provide a forum for the lithography industry to assess the status of NGL

technologies (EUV, X-Ray, EPL, IPL) for the 70nm-50nm nodes and below

• Enable participants to recommend a technology path for NGL that will focus resources for 2001

Scope• Worldwide industry workshop with over 150 lithography experts from 70

organizations (chip makers, suppliers, and researchers)• One day: Critical reviews of EUV, X-Ray, EPL, and IPL, Q&A forums

with technical champions, and surveyExpected Output• Better understanding throughout the industry of the NGL issues and

potentials• Industry recommendation that narrows the NGL options that

International SEMATECH supports in 2001• Greater industry consensus on the NGL options


NGL Workshop - September 25-26, 2000

Affiliation

Demographics

Region

150 people total

R&D26%

Suppliers44%

Chipmakers30%

NorthAmerica

64%

Europe16%

Asia20%

4

Key Survey Results

5

NGL W/S Survey (09/26/00) Sec. 6c: -Gen. Session- "How Many NGL technologies should International SEMATECH fund in 2001 ?"

0

10

20

30

40

50

60

None One Two Three Four Do Not Know

# of

Vot

es

General Session

NGL W/S Survey (09/26/00) Sec. 6c: - Task Force Only - "How Many NGL technologies should International SEMATECH fund in 2001 ?"

0

2

4

6

8

10

12

14


# of

Vot

es

Task Force Only

NGL W/S Survey (09/26/00) Sec. 6a -Gen. Session- ;"If International SEMATECH were to fund two (2) technologies in 2001, which two (2) would you choose?"

0

10

20

30

40

50

60

70

EUV and 1X X-Ray EUV and EPL EUV and IPL 1X X-Ray and EPL 1X X-Ray and IPL EPL and IPL Do Not Know

# of

Vot

es

General Session

NGL W/S Survey (09/26/00) Sec. 6a -Task Force Only- ;"If International SEMATECH were to fund two (2) technologies in 2001, which two (2) would you choose?"

0

2

4

6

8

10

12

14

16

18

EUV and 1X X-Ray EUV and EPL EUV and IPL 1X X-Ray and EPL 1X X-Ray and IPL EPL and IPL Do Not Know

# of

Vot

es

Task Force Only

6

NGL W/S Survey (09/26/00) Sec. 5 -Gen Sess.- Ability of Lithogarphy Industry to fund technologies

0

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35

40

Stro

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"It is likely that the industry will WANT more than one technology in manufacturing due to

difference in product application"

"The IC industry can support more than one mainstrean technology at the same time"

"The IC industry can afford to develop two (2) NGL technologies in parallel for the application at the

same node including required infrastructure (resist, masks, etc)"

General Session

NGL W/S Survey (09/26/00) Sec. 5 -Task Force Only- Ability of Litho Industry to fund technologies

0

2

4

6

8

10

12

14

Stro

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Dis

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# of

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"It is likely that the industry will WANT more than one technology in manufacturing due to

difference in product application"

"The IC industry can support more than one mainstrean technology at the same time"

"The IC industry can afford to develop two (2) NGL technologies in parallel for the application at the same node including required infrastructure

(resist, masks, etc)"Task Force Only


0

2

4

6

8

1 0

1 2

1 4

Y e s N o

Vote

s

NGL Task Force (9/27/00)

0

2

4

6

8

1 0

1 2

1 4

1 6

1 8

2 0

Y e s N o

Vot

es

Should we create Critical Issues for IPL

Should we create Critical Issues for X-Ray

7


Critical Issues from 9/00 NGL Task Force(For 70nm node/2006 insertion)

EUV#1 Defect-free ML coated ULE blank manufacturing#2 Defect-free mask manufacturing#3 Source and condenser optics CoO and reliability (debris

mitigation)#4 CoO of EUV#5 Reticle defect control solution (pellicle or alternative solution)#6 Prove thermal management of projection system at production

throughput (consistent with CoO)#7 Effective contamination control of of optical path (lifetime)


Critical Issues from 9/00 NGL Task Force(For 70nm node/2006 insertion)EPL

#1 Demonstration of seam blending/stitching#2 Defect-free mask manufacturing including stress control for

membrane and stencil masks#3 Experimental data on beam blur and its relation to CD control,

throughput, and image placement vs. feature size#4 Reticle defect control solution (pellicle or alternate solution for

both sides)#5 Demonstration of solution for wafer heating#6 Demonstration of real time electron alignment capability for all

levels#7 Demonstration of proximity correction and mask biasing, including

process window#8 Mask format standard (membrane vs. stencil)#9 CoO of EPL

8

NGL W/S Survey (09/26/00) Sec. #4c "When will manufacturing tools and infrastructure (mask, resist, metrology) that can meet the ITRS requirements for the 70nm node be available"

0

5

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25

30

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< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

er

"Do

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< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

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"Do

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< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

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"Do

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< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

er

"Do

Not

Kno

w"

# of

Vot

es

EUV 1X X-Ray EPL IPL

General Session

NGL W/S Survey (09/26/00) Sec. #4c - Task Force Only- "When will manufacturing tools and infrastructure (mask, resist, met) that meet the ITRS requirements for the 70nm node be available"

0

2

4

6

8

10

12

14

16

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

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"Do

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< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

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< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

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05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

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"Do

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# of

Vot

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Task Force Only

9

NGL W/S (09/26/00) Survey Sec. #8: If "YOUR" company had to choose only one (1) option today, what would your company choose ?

0

10

20

30

40

50

60

130nm 100nm 70nm 50nm 35nmIC Feature Node

# of

Vot

es

248nm193nm157nmEUVX-RayEPLEBDWIPLOtherDo Not Know

NGL W/S (09/26/00) Survey Sec. 8 - Task Force Only -: If "YOUR" company had to choose only one (1) option today, what would your company choose ?

0

2

4

6

8

10

12

14

16

18


# of

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Task Force Only

10

General Session

Full Workshop (General Session)Survey Results

September 26th 2000

11

Sept. 2000 NGL Workshop Survey ResultsGeneral Session Business Demographics

DRAM Chip Mfg.3% Mixed Chip Mfg.

19%

MPU Chip Mfg.8%

Tool Supplier / Infra.31%

R&D12%

Mask Supplier / Infra.8%

Other10%

Process / Resist Supplier

3%ASIC Chip Mfg.6%

Total Surveys Taken = 78

Chip Makers = 28Suppliers = 33R&D = 9Other = 8

Sept. 2000 NGL Workshop Survey Results Company Regional Demographics

Asia29%

Europe17%

North America54%

12

NGL W/S Survey (09/26/00) Sec. 1: Rate technology's current status by subcomponent using your knowledge and info. for at or below 70nm / 2008 node.

1

1.5

2

2.5

3

Source Optics Mask Resist Alignment

Subcomponent

Ave

rage

Sco

re

EUV1X X-RayEPLIPL

Solution Anticipated

Area of Concern

Potential Showstopper

NGL W/S Survey (09/26/00) Sec. 2: Rate technology's ability to meet Success Criteria for Litho for the 70nm / 2008 first year of production time frame.

1

2

3

4

5

Demonstrate solutionsto the NGL Critical

Issues

Meet ITRS Criteria forMFS, CD & OL

Be commerciallyavailable

Be affordable / CoO Be multi-generational to50nm

Ave

rage

Sco

re

EUV

1X X-Ray

EPL

IPL

High

Low

13

NGL W/S Survey (09/26/00) Sec. #3a Rate the progress the technology made in solving each Critical Issues (EUV Critical Issues #1 - #3)

0

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# of

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esEUV Issue #1

Defect-free ML coated ULE blank & mask mfg.

EUV Issue #2Source and condenser

optics reliability and CoO

EUV Issue #3reticle defect control solution

(pellicle or alternative solution)

NGL W/S Survey (09/26/00) Sec. #3b Rate the progress the technology made in solving each Critical Issues (EUV Critical Issues #4 - #6)

0

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EUV Issue #4CoO of EUV

EUV Issue #5Wavelength decision in 2000

EUV Issue #6Effective contamination control

of optical path (lifetime)

61 votes

14

NGL W/S Survey (09/26/00) Sec. #3c Rate the progress the technology made in solving each Critical Issues (EUV Critical Issues #7)

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# of

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esEUV Issue #7

Thermal management of projection system at high

throughput

NGL W/S Survey (09/26/00) Sec. #3d Rate the progress the technology made in solving each Critical Issues (1X X-Ray Critical Issues #1 - #3)

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1X X-Ray Issue #1Defect-free mask mfg. at 70nm

meeting ITRS requirements

1X X-Ray Issue #2Print significant good wafer levels

without adding mask defects

1X X-Ray Issue #3Demonstrate overlay capability using magnification correction

at 100nm

15

NGL W/S Survey (09/26/00) Sec. #3e Rate the progress the technology made in solving each Critical Issues (EPL Critical Issues #1 - #3)

0

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# of

Vot

esEPL Issue #1

Experimental verification of seam blending / stitching strategy

EPL Issue #2Experimental verification of solutions for wafer heating

EPL Issue #3Experimental beam blur data & relation to CD control, TPT, IP

vs. feature size

NGL W/S Survey (09/26/00) Sec. #3f Rate the progress the technology made in solving each Critical Issues (EPL Critical Issues #4 - #6)

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# of

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EPL Issue #4Defect-free mask mfg. at 70nm

with membrane & stencil stress control

EPL Issue #5Demonstration of real time

electron alignment capability for all levels

EPL Issue #6Mask format standard decision

needed in 2000

16

NGL W/S Survey (09/26/00) Sec. #3g Rate the progress the technology made in solving each Critical Issues (EPL Critical Issues #7 - #9)

0

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# of

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esEPL Issue #7CoO of EPL

EPL Issue #8Reticle defect control solution (pellicle or alternative solution

for both sides)

EPL Issue #9Demonstration of proximity correction & mask biasing

with process window

NGL W/S Survey (09/26/00) Sec. #3h Rate the progress the technology made in solving each Critical Issues (IPL Critical Issues #1 - #3)

0

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w"

Maj

or P

robl

ems

/ Sho

wst

oppe

r

Mor

e Pr

oble

ms

Iden

tifie

d

Add

ress

ed B

ut N

o C

hang

e

Som

e Pr

ogre

ss

Sign

ifica

nt p

rogr

ess

Issu

e So

lved

"Do

Not

Kno

w"

# of

Vot

es

IPL Issue #1Demonstration of full field optical

requirements for 70nm node

IPL Issue #2Defect-free mask

manufacturing at 70nm

IPL Issue #3Demonstration of overlay using

pre-distorted complementary masks

17

NGL W/S Survey (09/26/00) Sec. #3i Rate the progress the technology made in solving each Critical Issues (IPL Critical Issues #4 - #6)

0

5

10

15

20

25

30

35

40

45

50

Maj

or P

robl

ems

/ Sho

wst

oppe

r

Mor

e Pr

oble

ms

Iden

tifie

d

Add

ress

ed B

ut N

o C

hang

e

Som

e Pr

ogre

ss

Sign

ifica

nt p

rogr

ess

Issu

e So

lved

"Do

Not

Kno

w"

Maj

or P

robl

ems

/ Sho

wst

oppe

r

Mor

e Pr

oble

ms

Iden

tifie

d

Add

ress

ed B

ut N

o C

hang

e

Som

e Pr

ogre

ss

Sign

ifica

nt p

rogr

ess

Issu

e So

lved

"Do

Not

Kno

w"

Maj

or P

robl

ems

/ Sho

wst

oppe

r

Mor

e Pr

oble

ms

Iden

tifie

d

Add

ress

ed B

ut N

o C

hang

e

Som

e Pr

ogre

ss

Sign

ifica

nt p

rogr

ess

Issu

e So

lved

"Do

Not

Kno

w"

# of

Vot

esIPL Issue #4

Demonstrate mask heating compensation solution at high

throughput

IPL Issue #5mask irradiation damage in H +

IPL Issue #6Demonstrate beam blur

relationship of CD control, TPT, and IP vs. feature size

51 votes

NGL W/S Survey (09/26/00) Sec. #3j Rate the progress the technology made in solving each Critical Issues (IPL Critical Issues #7 - #8)

0

5

10

15

20

25

30

35

40

45

50

Maj

or P

robl

ems

/ Sho

wst

oppe

r

Mor

e Pr

oble

ms

Iden

tifie

d

Add

ress

ed B

ut N

o C

hang

e

Som

e Pr

ogre

ss

Sign

ifica

nt p

rogr

ess

Issu

e So

lved

"Do

Not

Kno

w"

Maj

or P

robl

ems

/ Sho

wst

oppe

r

Mor

e Pr

oble

ms

Iden

tifie

d

Add

ress

ed B

ut N

o C

hang

e

Som

e Pr

ogre

ss

Sign

ifica

nt p

rogr

ess

Issu

e So

lved

"Do

Not

Kno

w"

# of

Vot

es

IPL Issue #7Choice of ion species by

2000IPL Issue #8

Shot noise with resist sensitivity

18

NGL W/S Survey (09/26/00) Sec. #4a "When will a beta tool ("pre-production") be commercially available for 70nm ITRS requirement application use in IC product development by chip mfg." ?

0

5

10

15

20

25

30

35

40

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

# of

Vot

es


44 votes

NGL W/S Survey (09/26/00) Sec. #4b "When will a beta level mask ("pre-production") be commercially available for 70nm ITRS requirement application use in IC product dev. by chip

mfg." ?

0

5

10

15

20

25

30

35

40

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

# of

Vot

es


44 votes

19

NGL W/S Survey (09/26/00) Sec. #4c "When will manufacturing tools and infrastructure (mask, resist, metrology) that can meet the ITRS requirements for the 70nm node be available"

0

5

10

15

20

25

30

35

40

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Neve

r

"Do

Not

Kno

w"

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Neve

r

"Do

Not

Kno

w"

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Neve

r

"Do

Not

Kno

w"

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Neve

r

"Do

Not

Kno

w"

# of

Vot

es


52 votes

NGL W/S Survey (09/26/00) Sec. #4d "When will manufacturing tools and infrastructure (mask, resist, metrology) that can meet the ITRS requirements for the 50nm node be available"

0

5

10

15

20

25

30

35

40

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Neve

r

"Do

Not

Kno

w"

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Neve

r

"Do

Not

Kno

w"

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Neve

r

"Do

Not

Kno

w"

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Neve

r

"Do

Not

Kno

w"

# of

Vot

es


54 votes

20

NGL W/S Survey (09/26/00) Sec. #5 Ability of Lithography Industry to fund technologies

0

5

10

15

20

25

30

35

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

# of

Vot

es"It is likely that the industry will WANT

more than one technology in manufacturing due to difference in

product application"

"The IC industry can support more than one mainstrean technology at the same

time""The IC industry can afford to develop two

(2) NGL technologies in parallel for the application at the same node including

required infrastructure (resist, masks, etc)"

NGL W/S Survey (09/26/00) Sec. 6a;"If International SEMATECH were to fund two (2) technologies in 2001, which two (2) would you

choose?"

0

10

20

30

40

50

60

70

EUV and 1X X-Ray

EUV and EPL EUV and IPL 1X X-Ray andEPL

1X X-Ray andIPL

EPL and IPL Do Not Know

# of

Vot

es

21

NGL W/S Survey (09/26/00) Sec. 6b;"If International SEMATECH were to fund one (1) technology in 2001, which one (1) would you choose?"

0

10

20

30

40

50

60

EUV 1X X-Ray EPL IPL Do Not Know

# of

Vot

es

NGL W/S Survey (09/26/00) Sec. 6c: "How Many NGL technologies should International SEMATECH fund in 2001?"

0

10

20

30

40

50

60


# of

Vot

es

22

NGL W/S Survey (09/26/00) Sec. 6d: "What Year should International SEMATECH ultimately fund only one NGL technology?

0

5

10

15

20

25

30

2001 2002 2003 2004 2005 Never Do Not Know

# of

Vot

es

NGL W/S Survey (09/26/00) Sec. #7a: Overall current confidence on NGL technology becoming a working technology in a mainstream IC fab...

0

5

10

15

20

25

30

35

40

45

50

Very

Low

Som

ewha

t Low

Neu

tral

Som

ewha

t Hig

h

Very

Hig

h

"Do

Not

Kno

w"

Very

Low

Som

ewha

t Low

Neu

tral

Som

ewha

t Hig

h

Very

Hig

h

"Do

Not

Kno

w"

Very

Low

Som

ewha

t Low

Neu

tral

Som

ewha

t Hig

h

Very

Hig

h

"Do

Not

Kno

w"

Very

Low

Som

ewha

t Low

Neu

tral

Som

ewha

t Hig

h

Very

Hig

h

"Do

Not

Kno

w"

# of

Vot

es


66 votes

23

NGL W/S Survey (09/26/00) Sec. #7b: Overall current confidence over the PAST THREE YEARS on NGL technology becoming a working technology HAS...

0

5

10

15

20

25

30

35

40

45

Sign

ifica

ntly

Dec

reas

ed

Som

ewha

t Dec

reas

ed

Unc

hang

ed

Som

ewha

t Inc

reas

ed

Sign

ifica

ntly

Incr

ease

d

"Do

Not

Kno

w"

Sign

ifica

ntly

Dec

reas

ed

Som

ewha

t Dec

reas

ed

Unc

hang

ed

Som

ewha

t Inc

reas

ed

Sign

ifica

ntly

Incr

ease

d

"Do

Not

Kno

w"

Sign

ifica

ntly

Dec

reas

ed

Som

ewha

t Dec

reas

ed

Unc

hang

ed

Som

ewha

t Inc

reas

ed

Sign

ifica

ntly

Incr

ease

d

"Do

Not

Kno

w"

Sign

ifica

ntly

Dec

reas

ed

Som

ewha

t Dec

reas

ed

Unc

hang

ed

Som

ewha

t Inc

reas

ed

Sign

ifica

ntly

Incr

ease

d

"Do

Not

Kno

w"

# of

Vot

es


24

NGL W/S (09/26/00) Survey Sec. #8: If "YOUR" company had to choose only one (1) option today, what would your company choose ?

0

10

20

30

40

50

60


# of

Vot

es


NGL W/S Survey (09/26/00) Sec. #9a: ISMT NGL Consensus Building Process

0

5

10

15

20

25

30

35

40

45

50

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

# of

Vot

es"The ISMT NGL Consensus

Building Process provides me with the latest information on

the individual progress of each NGL technology"

"My company's attendance to this meeting is

worthwhile"

"The ISMT NGL Consensus Building Process steers and guides the NGL technology

developers in the correct direction"

"The major outputs from the ISMT NGL Workshop(s) fairly and accurately represents the

lithography industry consensus"

NGL W/S Survey (09/26/00) Sec. #9b: ISMT NGL Consensus Building Process

0

5

10

15

20

25

30

35

40

45

50

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

Stro

ngly

Dis

agre

e

Som

ewha

t Dis

agre

e

Neu

tral

Som

ewha

t Agr

ee

Stro

ngly

Agr

ee

Do

Not

Kno

w

# of

Vot

es

"My company fully supports the ISMT NGL Consensus Building Process which includes this workshop"

"This NGL Workshop is an important and valuable

mechanism for my company"

"ISMT should continue the NGL Consensus Building

Process in the future"

"ISMT should hold another NGL Workshop in September 2001"

25

Survey Question #114 "Prease write in your recommendation on the technology path for the 70nm / 2008 lithographic solution ?"

0 2 4 6 8 10 12

157nm for 70nm

EUV for 70nm

193nm for 70nm (Hi NA & RET)

EPL for 70nm

70nm node is really sooner than2008 (~2005 ?)

Need to see results on EUV, EPL,157nm by 2002

Fund critical issues in 2001; (EUVblanks & source, EPL mask)

EBDW

Writ

e-in

Sug

gest

ions

Number of votes / write-ins

Survey Question #115 "What should ISMT be doing in addition to the NGL Consensus Building Process that it is not already doing ?"

0 2 4 6 8 10 12

Standardize on EPL mask

Better analysis of multiple funding of alternative options

Include Maskless Litho

Accelerate Alpha tool demos

Better CoO analysis

ISMT to fund more infrastructure

No more consensus building (ISMT disengage process)

Have another NGL workshop(s) (EPL, EUV & 157nm only together)

Emphasis more on data collection / risk reduction

Improve / Better consensus process (more fair, expert panels, moresuppliers, work w/ TC more)

Writ

e in

Sug

gest

ion

Number of Votes26

Historical Workshop Survey TrendsNov. 1997 through Sept. 2000

27

EUV Historical NGL Workshop Survey "Rate the technology's current status by "Subcomponent" Comparison

1

1.5

2

2.5

3


Subcomponent

Ave

rage

Vot

e

Nov. '97May '98Dec. '98June '99Dec. '99Sep. '00


Area of Concern


1X X-Ray Historical NGL Workshop Survey "Rate the technology's current status by "Subcomponent" Comparison

1

1.5

2

2.5

3


Subcomponent

Ave

rage

Vot

e



Area of Concern


28

EPL Historical NGL Workshop Survey "Rate the technology's current status by "Subcomponent" Comparison

1

1.5

2

2.5

3

Source Optics Mask Resist AlignmentSubcomponent

Aver

age

Vote



Area of Concern


IPL Historical NGL Workshop Survey "Rate the technology's current status by "Subcomponent" Comparison

1

1.5

2

2.5

3

Source Optics Mask Resist AlignmentSubcomponent

Ave

rage

Vot

e



Area of Concern


29

EUV Historical NGL Workshop Survey "Rate technology on ability to meet Success Criteria" Comparison

1

2

3

4

5

Solutions to TWG C.I. Meet SIA Roadmap CommerciallyAvaialble when needed

Affordable / CoO Evoluationary to 50nm

Ave

rage

Vot

e


High

Low

1X X-Ray Historical NGL Workshop Survey "Rate technology on ability to meet Success Criteria" Comparison

1

2

3

4

5



Ave

rage

Vot

e


High

Low

30

EPL Historical NGL Workshop Survey "Rate technology on ability to meet Success Criteria" Comparison

1

2

3

4

5



Ave

rage

Vot

eNov. '97May '98Dec. '98June '99Dec. '99Sep. '00

High

Low

IPL Historical NGL Workshop Survey "Rate technology on ability to meet Success Criteria" Comparison

1

2

3

4

5

Solutions to TWG C.I. Meet SIA Roadmap Commercially Avaialblewhen needed


Ave

rage

Vot

e


High

Low

31

ISMT NGL Survey Historical Trend: If "Your" company had to choose only one (1) option FOR THE 130nm Node , what would your company choose?"

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

11/97 5/98 12/98 6/99 12/99 09/00Date of Survey

Perc

enta

ge o

f Vot

es


ISMT NGL Survey Historical Trend: If "Your" company had to choose only one (1) option today FOR THE 100nm Nod e , what would your company choose? SM

0%

10%

20%

30%

40%

50%

60%

70%

80%

11/97 5/98 12/98 6/99 12/99 09/00Date of Survey

Perc

enta

ge o

f Vot

es


32

ISMT NGL Survey Historical Trend: If "Your" company had to choose only one (1) option today FOR THE 70nm Node , what would your company choose?"

0%

5%

10%

15%

20%

25%

30%

35%

40%

45%

11/97 5/98 12/98 6/99 12/99 09/00Date of Survey

Perc

enta

ge o

f Vot

es



0%

10%

20%

30%

40%

50%

60%

70%

80%

11/97 5/98 12/98 6/99 12/99 09/00Date of Survey

Perc

enta

ge o

f Vot

es


33


0%

10%

20%

30%

40%

50%

60%

70%

80%

11/97 5/98 12/98 6/99 12/99 09/00Date of Survey

Perc

enta

ge o

f Vot

es


34

Full Task Force Survey ResultsSeptember 26th 2000

35

NGL W/S Survey (09/26/00) Sec. 1 -TASK FORCE ONLY- : Rate technology's current status by subcomponent using your knowledge and info. for at or below 70nm / 2008 node.

1

1.5

2

2.5

3


Subcomponent

Ave

rage

Sco

re

EUV1X X-RayEPLIPL


Area of Concern


Task Force Only

NGL W/S Survey (09/26/00) Sec. 2 - Task Force Only - : Rate technology's ability to meet Success Criteria for Litho for the 70nm / 2008 first year of production time frame.

1

2

3

4

5

Demonstrate solutions tothe NGL Critical Issues

Meet ITRS Criteria forMFS, CD & OL

Be commercially available Be affordable / CoO Be multi-generational to50nm

Ave

rage

Sco

re

EUV1X X-RayEPLIPL

High

Low

Task Force Only

36

NGL W/S Survey (09/26/00) Sec. #3b -Task Force Only- Rate the progress the technology made in solving each Critical Issues (EUV Critical Issues #4 - #6)

0

2

4

6

8

10

12

14

16

18

20

# of

Vot

es

Task Force Only

EUV Issue #6Effective contamination control of optical path

(l i fetime)

EUV Issue #5Wavelength decision in 2000

EUV Issue #4CoO of EUV

NGL W/S Survey (09/26/00) Sec. #3a - Task Force Only- Rate the progress the technology made in solving each Critical Issues (EUV Critical Issues #1 - #3)

0

2

4

6

8

10

12#

of V

otes

EUV Issue #1Defect-free M L coated

ULE blank & mask mfg.

EUV Issue #2Source and condenser optics

rel iabil i ty and CoO

EUV Issue #3reticel defect control solution

(pel l icle or al ternative solution)

Task Force Only

37

NGL W/S Survey (09/26/00) Sec. #3d -Task Force Only- Rate the progress the technology made in solving each Critical Issues (X-Ray Critical Issue #1- #3)

0

2

4

6

8

10

12

# of

Vot

es

1X X-Ray Issue #1Defect-free mask mfg. at

70nm meeting ITRS requirements

1X X-Ray Issue #2Print significant good wafer levels without adding mask

defects

1X X-Ray Issue #3Demonstrate overlay

capabil i ty using maginfication correction at

100nm

Task Force Only

NGL W/S Survey (09/26/00) Sec. #3c - Task Force Only- Rate the progress the technology made in solving each Critical Issues (EUV Critical Issues #7)

0

2

4

6

8

10

12#

of V

otes

EUV Issue #7Thermal management of projection system at high

throughput

Task Force Only

38

NGL W/S Survey (09/26/00) Sec. #3f -Task Force Only- Rate the progress the technology made in solving each Critical Issues (EPL Critical Issues #4 - #6)

0

2

4

6

8

10

12

14

16

18

# of

Vot

es

EPL Issue #4Defect-free mask mfg. at 70nm with membrane &

stencil stress control

EPL Issue #5Demonstration of real

timeelectron alignment capabil i ty for al l levels

EPL Issue #6M ask format standard

decision needed in 2000

Task Force Only

NGL W/S Survey (09/26/00) Sec. #3e -Task Force Only- Rate the progress the technology made in solving each Critical Issues (EPL Critical Issues #1 - #3)

0

2

4

6

8

10

12#

of V

otes

EPL Issue #1Experimental verification of

seam blending / stitching strategy

EPL Issue #2Experimental verification of solutions for wafer heating

EPL Issue #3Experimental beam blur data & relation to CD control, TPT,

IP vs. feature size

Task Force Only

39

NGL W/S Survey (09/26/00) Sec. #3h -Task Force Only- Rate the progress the technology made in solving each Critical Issues (IPL Critical Issues #1 - #3)

0

2

4

6

8

10

12

14

16

18

# of

Vot

es

IPL Issue #1Demonstration of ful l field

optical requirements for 70nm node

IPL Issue #2Defect-free mask

manufacturing at 70nm

IPL Issue #3Demonstration of overlay

using pre-distorted complementary masks

Task Force Only

NGL W/S Survey (09/26/00) Sec. #3g -Task Force Only- Rate the progress the technology made in solving each Critical Issues (EPL Critical Issues #7 - #9)

0

2

4

6

8

10

12

14

16

18#

of V

otes

EPL Issue #7CoO of EPL

EPL Issue #8Reticle defect control solution

(pell icle or alternative solution for both sides)

EPL Issue #9Demonstration of proximity correction & mask biasing

with process window

Task Force Only

40

NGL W/S Survey (09/26/00) Sec. #3i -Task Force Only- Rate the progress the technology made in solving each Critical Issues (IPL Critical Issues #4 - #6)

0

2

4

6

8

10

12

14

16#

of V

otes

IPL Issue #4Demonstrate mask heating

compensation solution at high throughput

IPL Issue #5mask irradiation damage in

H +

IPL Issue #6Demonstrate beam blur

relationship of CD control, TPT, and IP vs. feature size

Task Force Only

NGL W/S Survey (09/26/00) Sec. #3j - Task Force Only- Rate the progress the technology made in solving each Critical Issues (IPL Critical Issues #7 - #8)

0

2

4

6

8

10

12

# of

Vot

es

IPL Issue #7Choice of Ion Species

by 2000

IPL Issue #8Shot Noise with resist

sensativity

Task Force Only

41

NGL W/S Survey (09/26/00) Sec. #4a - Task Force Only- "...beta tool ("pre-production") be commercially available for 70nm ITRS requirement application use in IC product dev. by chip mfg?"

0

2

4

6

8

10

12

14

16<

2003

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

# of

Vot

es


Task Force Only

NGL W/S Survey (09/26/00) Sec. #4b -Task Force Only- "...beta level mask ("pre-production") be commercially available for 70nm ITRS requirement application use in IC product dev. by chip mfg?"

0

2

4

6

8

10

12

14

16

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

< 20

03

2003

2004

2005

2006

2007

2008

>200

8

Nev

er

"Do

Not

Kno

w"

# of

Vot

es


Task Force Only

42

NGL W/S Survey (09/26/00) Sec. #4c - Task Force Only- "When will manufacturing tools and infrastructure (mask, resist, met) that meet the ITRS requirements for the 70nm node be available"

0

2

4

6

8

10

12

14

16<

2005

2005

2006

2007

2008

2009

2010

> 20

10

Nev

er

"Do

Not

Kno

w"

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

er

"Do

Not

Kno

w"

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

er

"Do

Not

Kno

w"

< 20

05

2005

2006

2007

2008

2009

2010

> 20

10

Nev

er

"Do

Not

Kno

w"

# of

Vot

es


Task Force Only

NGL W/S Survey (09/26/00) Sec. #4d -Task Force Only- "When will manufacturing tools and infrastructure (mask, resist, met) that meet the ITRS requirements for the 50nm node be available"

0

2

4

6

8

10

12

14

16

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Nev

er

"Do

Not

Kno

w"

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Nev

er

"Do

Not

Kno

w"

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Nev

er

"Do

Not

Kno

w"

< 20

08

2008

2009

2010

2011

2012

2013

> 20

13

Nev

er

"Do

Not

Kno

w"

# of

Vot

es


Task Force Only

43

N G L W /S S u rvey (09/26/00) S ec. 5 -T ask F o rce O n ly- A b i l i ty o f L ith o In d u stry to fu n d tech n o lo g ies

0

2

4

6

8

10

12

14

# of

Vot

es

" It i s l i k e l y t h a t t h e i n d u s t r y w i l l W A N T m o r e t h a n o n e t e c h n o l o g y i n m a n u f a c t u r i n g d u e t o d i f f e r e n c e i n

p r o d u c t a p p l i c a t i o n "

" T h e IC i n d u s t r y c a n s u p p o r t m o r e t h a n o n e m a i n s t r e a n t e c h n o l o g y a t

t h e s a m e t i m e "

" T h e IC i n d u s t r y c a n a f f o r d t o d e v e l o p t w o ( 2 ) N G L t e c h n o l o g i e s

i n p a r a l l e l f o r t h e a p p l i c a t i o n a t t h e s a m e n o d e i n c l u d i n g r e q u i r e d

i n f r a s t r u c t u r e ( r e s i s t , m a s k s , e t c ) "

T ask F o rce O n ly

NGL W/S Survey (09/26/00) Sec. 6a -Task Force Only- ;"If International SEMATECH were to fund two (2) technologies in

2001, which two (2) would you choose?"

0

2

4

6

8

10

12

14

16

18

EUV and 1XX-Ray

EUV andEPL

EUV and IPL 1X X-Rayand EPL

1X X-Rayand IPL

EPL and IPL Do NotKnow

Task Force Only

44

NGL W/S Survey (09/26/00) Sec. 6b - Task Force Only- ;"If International SEMATECH were to fund one (1) technology in 2001, which one (1) would you

choose?"

0

2

4

6

8

10

12

14

16

18

EUV 1X X-Ray EPL IPL Do Not Know

Task Force Only

NGL W/S Survey (09/26/00) Sec. 6c: - Task Force Only - "How Many NGL technologies should International SEMATECH fund in 2001 ?"

0

2

4

6

8

10

12

14


# of

Vot

es

Task Force Only

45

NGL W/S Survey (09/26/00) Sec. 6d - Task Force Only -: "What Year should International SEMATECH ultimately fund only one NGL technology?

0

1

2

3

4

5

6

7

8

2001 2002 2003 2004 2005 Never Do NotKnow

# of

Vot

es

Task Force Only

NGL W/S Survey (09/26/00) Sec. #7a - Task Force Only - : Overall current confidence on NGL technology becoming a working

technology in a mainstream IC fab...

0

2

4

6

8

10

12

14

16

18

20

# of

Vot

es


Task Force Only

46

NGL W/S Survey (09/26/00) Sec. #7b - Task Force Only - : Overall current confidence over the PAST THREE YEARS on NGL technology becoming a

working technology HAS...

0

2

4

6

8

10

12

14

16

# of

Vot

es


Task Force Only

NGL W/S (09/26/00) Survey Sec. 8 - Task Force Only -: If "YOUR" company had to choose only one (1) option today, what would your company choose ?

0

2

4

6

8

10

12

14

16

18


# of

Vot

es


Task Force Only

47

NGL W/S Survey (09/26/00) Sec. #9a - Task Force Only - : ISMT NGL Consensus Building Process

0

2

4

6

8

10

12

# of

Vot

es

"The IS M T NGL Co ns ens us B uilding P ro ces s pro v ides m e with the lates t info rm atio n o n

the indiv idual pro gres s o f each NGL techno lo gy"

"M y co m pany's attendance to this m eeting is wo rthwhile"

"The IS M T NGL Co ns ens us B uilding P ro ces s s teers and guides the NGL techno lo gy deve lo pers in the co rrect

directio n"

"The m ajo r o utputs fro m the IS M T NGLWo rks ho p(s ) fairly and accurately repres ents the

litho graphy indus try co ns ens us "

NGL W/S Survey (09/26/00) Sec. #9b - Task Force Only - : ISMT NGL Consensus Building Process

0

2

4

6

8

10

12

# of

Vot

es

"M y co m pany fully s uppo rts the IS M T NGL Co ns ens us

B uilding P ro ces s which inc ludes this wo rks ho p"

"This NGL Wo rks ho p is an im po rtant and valuable

m echanis m fo r m y co m pany"

"IS M T s ho uld co ntinue the NGL Co ns ens us B uilding

P ro ces s in the future"

"IS M T s ho uld ho ld ano ther NGL Wo rks ho p in S pe tem ber

2001"

48

Task Force Meeting(“Clicker”) Questions

9/27/00

49

Topic 1

Assess Progress against Critical Issues

50

Topic 2

Define new Critical Issues for 2001

79

Topic 3

Review Key Technology Issues

96

Topic 4

Recommend Technology Paths for Industry and ISMT

100

Topic 5

Open discussion and wrap-up

108

Addendum• Workshop agenda and attendees

•Task Force agenda and attendees

•International SEMATECH press release

115

MEETING AGENDA

Next Generation Lithography WorkshopThe Hyatt Regency Hotel, Reston, VASeptember 25-26, 2000

MONDAY, September 25

15:00 – 20:30 Pre-registration18:30 – 20:30 Reception / Poster Session

TUESDAY, September 26

07:00 Breakfast / Registration08:00 Welcome / Introduction John Canning08:20 EUV Status Chuck Gwyn09:40 EUV Q&A / Feedback Neil Wester10:00 BREAK10:30 X-Ray Status Akihiko Ishitani11:30 X-Ray Q&A / Feedback Phil Seidel

11:50 LUNCH

12:50 EPL Status Lloyd Harriott14:10 EPL Q&A / Feedback Scott Mackay14:30 BREAK14:50 IPL Status Rainer Kaesmeier15:50 IPL Q&A / Feedback Carmelo Romeo16:10 Survey Phil Seidel17:10 Adjourn

19:00 Reception19:30 Dinner

21:00 Survey Results John Canning21:30 Adjourn 116

NEXT GENERATION LITHOGRAPHY WORKSHOPMEETING ATTENDEES

9/25-26/2000FIRST NAME LAST NAME COMPANY PHONE FAX E-MAILJohn Ricardi ALFT (819)770-0477 (819)770-3862 [email protected] F. (Dave) Kyser AMD (408)749-2071 (408)774-8818 [email protected] Levinson AMD (408)749-2558 (408)774-8813 [email protected] Venkatesam Applied Materials (408)235-6135 (408)563-5554 [email protected] Hisatsugu ASET (011)81-3-5531-0091 (011)81-3-5531-0093 [email protected] Ishitani ASET (011)81-3-5531-0091 (011)81-3-5531-0093 [email protected] Okazaki ASET (011)81-46-270-6680 (011)81-46-270-6699 [email protected] Suzuki ASET (011)81-298-50-1163 (011)81-298-56-6138 [email protected] H. (Bill) Arnold ASM Lithography (011)31-40-268-4757 (011)31-40-268-5320 [email protected] P.H. Benschop ASM Lithography (011)31-40-2303968 (011)31-40-2682735 [email protected] Cummings ASM Lithography (480)383-4234 (480)383-3978 [email protected] A. van den Brink ASM Lithography (011)31-40-268-3521 (011)31-40-268-4333 [email protected] L. (Skip) Berry Axcelis Technologies (301)284-5557 (301)340-9586 [email protected] Mizusawa Canon Inc. (011)81-28-667-5711 (011)81-28-667-5334 [email protected] M. Ware Canon Inc. (972)409-7845 (972)409-7849 [email protected] Kaiser Carl Zeiss (011)49-7364-20-4690 (011)49-7364-20-4509 [email protected] Stenkamp Carl Zeiss (011)49-73-64202187 (011)49-73-64203364 [email protected] Dammel Clariant (908)429-3533 (908)429-3634 [email protected] R. Farrar Cymer, Inc. (408)330-0259 (858)385-6035 [email protected] Nakamura Dai Nippon Printing Co., Ltd. (408)616-1223 (408)735-0453 [email protected] Sano Dai Nippon Printing Co., Ltd. (011)81-492-78-1683 (011)81-492-78-1698 [email protected] F. (Bob) Leheny DARPA (703)696-0048 (703)696-2206 [email protected] O. (Dave) Patterson DARPA (703)696-2276 (703)696-2206 [email protected] P. (Greg) Hughes DuPont Photomask, Inc. (512)310-6407 (512)310-6464 [email protected] D. (Dick) Moore DuPont Photomask, Inc. (914)463-5361 (914)463-5303 [email protected] Goebel eLith (908)286-5814 (908)286-1969 [email protected] Guo eLith (908)286-5810 (908)286-1969 [email protected] F. Luehrmann eLith (011)31-40-2303242 (011)31-40-2303881 [email protected] Siddiqui eLith (908)286-5811 (908)286-1969 [email protected] (Wolf) Staud eLith (908)286-1960 (908)286-1969 [email protected] van der Mast eLith (908)286-5808 (908)286-1969 [email protected]. Smith Etec Systems, Inc. (510)887-3388 (510)780-3941 [email protected] R. (Chris) Musil FEI Company (978)538-6687 (978)531-9648 [email protected] Hanyu Fujitsu Limited (011)81-594-24-1679 (011)81-594-24-1594 [email protected]

PAGE 117


9/25-26/2000FIRST NAME LAST NAME COMPANY PHONE FAX E-MAILKei Horiuchi Fujitsu Limited (011)81-46-250-8810 (011)81-46-248-3473 [email protected] (Kaz) Kadota Hitachi, Ltd. (408)955-7009 (408)432-0706 [email protected] Terasawa Hitachi, Ltd. (011)81-42-323-1111x3320 (011)81-42-327-7771 [email protected] T. Jee HOYA Corporation (408)441-3307 (408)451-9623 [email protected] Nagarekawa HOYA Corporation (011)81-3-3952-7197 (011)81-3-3952-4042 [email protected] (Charlie) Bok Hyundai Electronics Industries (011)82-31-630-4474 (011)82-31-630-4545 [email protected] Kim Hyundai Electronics Industries (011)82-31-630-4474 (011)82-31-630-4545 [email protected] Kim Hyundai Electronics Industries (512)356-7051 (512)356-3618 [email protected] R. (Wally) Carpenter IBM Corporation (512)356-3897 (512)356-3618 [email protected] A. Gomba IBM Corporation (845)892-2756 9845)892-6374 [email protected] Lercel IBM Corporation (802)769-8474 (802)769-2110 [email protected] (Chris) Progler IBM Corporation (914)892-2395 (914)892-6850 [email protected] Seeger IBM Corporation (914)945-3838 (914)945-4520 [email protected] Stickel IBM Corporation (914)892-3692 (914)892-6303 [email protected] Wallraff IBM Corporation (408)927-2503 (408)927-3310 [email protected] Warlaumont IBM Corporation (914)945-1819 (914)945-4014 [email protected] M.F. Goethals IMEC (011)32-16-281351 (011)32-16-281214 [email protected] Ronse IMEC (011)32-16-281336 (011)32-16-281214 [email protected] Loschner IMS (011)43-1-214-489424 (011)43-1-214-489499 [email protected] Domke Infineon Technologies AG (011)49-9131-732832 (011)49-9131-724949 [email protected] Ehrmann Infineon Technologies AG (011)49-89-234-23511 (011)49-89-234-711530 [email protected] Kaesmaier Infineon Technologies AG (011)49-89-234-50885 (011)49-89-234-23029 [email protected] Oelmann Infineon Technologies AG (011)49-351-886-7700 (011)49-351-886-7702 [email protected] Gargini Intel Corporation (408)765-9646 (408)653-7039 [email protected] W. (Chuck) Gwyn Intel Corporation (925)294-2372 (925)294-3376 [email protected] Philippi Intel Corporation (408)765-1869 (408)765-9228 [email protected] Silverman Intel Corporation (408)765-2131 (408)765-3995 [email protected] Wester Intel Corporation (512)356-7562 (512)356-3618 [email protected] Behr International SEMATECH (512)356-7899 (512)356-3618 [email protected] Canning International SEMATECH (512)356-3256 (512)356-3618 [email protected] Curtis International SEMATECH (512)356-3343 (512)356-3135 [email protected] Gross International SEMATECH (512)356-7405 (512)356-3618 [email protected] S. (Rich) Harbison International SEMATECH (512)356-3176 (512)356-3618 [email protected] Harlan International SEMATECH (512)356-3927 (512)356-3029 [email protected]

PAGE 118


9/25-26/2000FIRST NAME LAST NAME COMPANY PHONE FAX E-MAILScott Mackay International SEMATECH (512)356-3617 (512)356-3618 [email protected] Reed International SEMATECH (512)356-7470 (512)356-3618 [email protected] K. (Phil) Seidel International SEMATECH (512)356-3732 (512)356-3618 [email protected] Sheedy International SEMATECH (512)356-7569 (512)356-3243 [email protected] V. (Gil) Shelden International SEMATECH (512)356-7158 (512)356-3618 [email protected] J. (Walt) Trybula International SEMATECH (512)356-3306 (512)356-3618 [email protected] Brodie Ion Diagnostics Inc. (408)855-8700, 104 (408)855-8730 [email protected] Lowery JSR Corporation (919)479-6981 (919)479-8141 [email protected] Standiford Keith Standiford Cons. Svcs. (510)339-9223 (510)339-8665 [email protected] Bareket KLA-Tencor (408)875-5676 (408)434-4284 [email protected] Preil KLA-Tencor (408)875-2375 (408)875-2683 [email protected] Slusarczuk KLA-Tencor (408)875-0261 (408)875-4262 [email protected] N. (Jim) Wiley KLA-Tencor (408)875-6136 (408)875-4262 [email protected] Leung Lawrence Berkeley (510)486-7918 (510)486-5105 [email protected] A. (Jim) Glaze Lawrence Livermore (925)424-6778 (925)422-5411 [email protected] W. (Don) Sweeney Lawrence Livermore (925)522-5877 (925)422-8761 [email protected] Groves Leica Inc. (011)44-1223-411123 (011)44-1223-211310 [email protected] Rissman LSI Logic Corporation (408)433-6380 (408)433-6330 [email protected] Harriott Lucent Technologies (908)582-4922 (908)582-2300 [email protected] Ibbotson Lucent Technologies (407)371-6060 (407)371-6967 [email protected] E. (Tony) Novembre Lucent Technologies (908)582-3304 (908)582-2300 [email protected] Waskiewicz Lucent Technologies (908)582-6416 (908)582-2300 [email protected] Crawley Management Strategies Ltd. (011)44-1923-229494 (011)44-1923-242381 [email protected] Endo Matsushita Electronics (011)81-75-662-8994 (011)81-75-662-8995 [email protected] Gotz MEDEA (011)33-1-40644566/60 (011)33-1-4064-4589 [email protected] (Will) Conley Motorola, Inc. (512)356-3669 (512)356-3618 [email protected] Hector Motorola, Inc. (925)294-2337 (925)294-3376 [email protected] Mangat Motorola, Inc. (480)413-7775 (480)413-8014 [email protected]. Joseph (Joe) Mogab Motorola, Inc. (512)933-7807 (512)933-6962 [email protected] Tamura NEC Corporation (011)81-42-779-9903 (011)81-42-779-9928 [email protected] Hasegawa Nikon Corporation (011)813-3216-1027 (011)813-3216-1059 [email protected] Kameyama Nikon Corporation (011)81-3-3773-8460 (011)81-3-3774-9048 [email protected] Miura Nikon Corporation (011)81-48-533-2357 (011)81-48-533-3817 [email protected] Novak Nikon Corporation (650)508-4674, ext. 350 (650)508-4625 [email protected]

PAGE 119


9/25-26/2000FIRST NAME LAST NAME COMPANY PHONE FAX E-MAILMichael Sogard Nikon Corporation (650)508-4674 (650)508-4625 [email protected] Suzuki Nikon Corporation (011)81-03-3773-8460 (011)81-03-3773-6734 [email protected] G. (Gil) Varnell Nikon Corporation (650)508-4674 ext. 622 (650)508-4625 [email protected] Wiesner Nikon Corporation (650)508-4674 ext. 335 (650)508-3837 [email protected] Yamaguchi Nikon Corporation (406)752-2107 ext. 7422 (011)81-3-3773-6734 [email protected] Linholm NIST (301)975-2052 (301)975-5668 [email protected] Sato OHKA (503)693-2097 (503)693-2070 [email protected]. Neil Berglund Oregon Graduate Institute (503)624-7449 (503)684-1384 [email protected] Hartmann PDF Solutions (011)49-89-767062-0 (011)49-89-76062-11 [email protected]. (Mart) Graef Philips (011)31-40-2744600 (011)31-40-2743390 [email protected] Juffermans Philips (011)31-40-274-2540 (011)31-40-274-3390 [email protected] Zandbergen Philips (011)31-40-27-24943 (011)31-40-27-23828 [email protected]. Mathur Photronics, Inc. (203)459-3427 (203)459-2598 [email protected] Moneta Photronics, Inc. (972)889-6276 (972)889-6471 [email protected] Walker Photronics, Inc. (802)769-1885 (203)270-3864 [email protected] Selzer SAL, Inc. (802)652-0055 (802)652-0826 [email protected] Ku Cho SAMSUNG Electronics (011)82-331-209-3057 (011)82-331-209-6299 [email protected] H. (Rick) Stulen Sandia National Labs (925)294-2070 (925)294-3847 [email protected] Yamabe Selete (011)81-45-866-6845 (011)81-45-866-6879 [email protected] Taylor Shipley Company, Inc. (508)229-7112 (508)229-7555 [email protected] Harned Silicon Valley Group, Inc. (408)467-5864 (408)467-5867 [email protected] P. (Pat) Gardner SISA (512)356-3586 (512)356-3195 [email protected] Ogawa Sony Corporation (011)81-3-5435-3606 (011)81-3-5435-3803 [email protected] Dozor SSG, Inc. (978)694-9991 (978)694-9930 [email protected] Amblard STMicroelectronics (512)356-3394 (512)356-3618 [email protected] Bianucci STMicroelectronics (512)356-7466 (512)356-3618 [email protected] Fuller Strategic Lithography Services (972)680-3598 (972)234-8174 [email protected] Hirose Sumitomo Heavy Industries, Ltd (011)81-424-68-4488 (011)81-424-68-4477 [email protected]. Rinn Cleavelin Texas Instruments, Inc. (512)356-3177 (512)356-3455 [email protected] Hanratty Texas Instruments, Inc. (972)995-2200 (972)995-1916 [email protected] D. Kim Texas Instruments, Inc. (512)356-7634 (512)356-3618 [email protected] de Jager TNO-TPD (011)31-15-2692187 (011)31-15-2692111 [email protected] (Duke) Yaegashi Tokyo Electron (011)81-3-5561-7074 (011)81-3-5561-7395 [email protected] Yamaguchi Tokyo Electron (512)424-1496 (512)424-1039 [email protected]

PAGE 120


9/25-26/2000FIRST NAME LAST NAME COMPANY PHONE FAX E-MAILTakayuki Abe Toshiba Corporation (011)81-559-26-5273 (011)81-559-25-6577 [email protected] Takigawa Toshiba Corporation (011)81-45-770-3651 (011)81-45-770-3570 [email protected] Martos TRW (310)813-9582 (310)813-3916 [email protected] Shields TRW (925)294-4571 (925)294-3870 [email protected] Jeng Lin TSMC (011)886-3-5781688x4750 (011)886-3-5637386 [email protected] Lin TSMC (512)356-7056 (512)356-3618 [email protected] (Tony) Yen TSMC (011)886-3-5666064 (011)886-3-5637386 [email protected] Bowering Tuilaser AG (011)49-89-898169-63 (011)49-89-8545610 [email protected] Geiger Tuilaser AG (011)49-89-898-16926 (011)49-89-854-5610 [email protected] Curl Ultratech Stepper (408)577-3379 [email protected] A. (Dave) Markle Ultratech Stepper (408)577-3004 (408)577-3379 [email protected] Thompson Ultratech Stepper (512)369-1605 (512)385-0056 [email protected] G. (Bill) Oldham Univ. of California, Berkeley (510)642-2318 (510)643-2739 [email protected] L. (Roxy) Engelstad Univ. of Wisconsin (608)262-5745 (608)265-0781 [email protected] Fellenberg VDI Technology Center (011)49-211-6214-559 (011)49-211-6214-484 [email protected]

PAGE 121

NGL Task Force Meeting 2000Hyatt Hotel, Reston, Virginia

September 27, 2000

Purpose

— Review output of Workshop and assess progress on critical issues

— Recommend a technology path for the industry in general, and International SEMATECH in particular

Agenda

07:00 BREAKFAST08:00 Welcome/Agenda/Purpose08:20 Assess progress against Critical Issues09:00 Define new Critical Issues for 200110:00 BREAK10:20 Review key technology issues11:00 Recommend technology paths for industry and ISMT11:40 Open discussion and wrap-up12:00 LUNCH13:00 ADJOURN

122

NEXT GENERATION LITHOGRAPHY WORKSHOP

NGL TASK FORCE MEETING ATTENDEES9/27/2000

FIRST NAME LAST NAME COMPANY PHONE FAX E-MAILHarry Levinson AMD (408)749-2558 (408)774-8813 [email protected] H. (Bill) Arnold ASM Lithography (011)31-40-268-4757 (011)31-40-268-5320 [email protected] Mizusawa Canon Inc. (011)81-28-667-5711 (011)81-28-667-5334 [email protected] F. Luehrmann eLith (011)31-40-2303242 (011)31-40-2303881 [email protected] Terasawa Hitachi, Ltd. (011)81-42-323-1111x3320 (011)81-42-327-7771 [email protected] (Charlie) Bok Hyundai Electronics Industries (011)82-31-630-4474 (011)82-31-630-4545 [email protected] A. Gomba IBM Corporation (845)892-2756 9845)892-6374 [email protected] Oelmann Infineon Technologies AG (011)49-351-886-7700 (011)49-351-886-7702 [email protected] Silverman Intel Corporation (408)765-2131 (408)765-3995 [email protected] Gross International SEMATECH (512)356-7405 (512)356-3618 [email protected] Ibbotson Lucent Technologies (407)371-6060 (407)371-6967 [email protected]. Joseph (Joe) Mogab Motorola, Inc. (512)933-7807 (512)933-6962 [email protected] Kameyama Nikon Corporation (011)81-3-3773-8460 (011)81-3-3774-9048 [email protected]. (Mart) Graef Philips (011)31-40-2744600 (011)31-40-2743390 [email protected] Yamabe Selete (011)81-45-866-6845 (011)81-45-866-6879 [email protected] Harned Silicon Valley Group, Inc. (408)467-5864 (408)467-5867 [email protected] Bianucci STMicroelectronics (512)356-7466 (512)356-3618 [email protected] Hanratty Texas Instruments, Inc. (972)995-2200 (972)995-1916 [email protected] Abe Toshiba Corporation (011)81-559-26-5273 (011)81-559-25-6577 [email protected] (Tony) Yen TSMC (011)886-3-5666064 (011)886-3-5637386 [email protected]

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Editorial Contact: Anne Englander (512) 356-7155

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Judith Curtis (512) 356-3343

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Lithographers Narrow Options to EUV and EPL for Commercialization

Austin, Texas (11 October 2000) – The world’s leading lithographers attending a Next Generation Lithography (NGL) Workshop sponsored by International SEMATECH have recommended that the global industry narrow the NGL options to two technologies, Extreme Ultraviolet (EUV) and Electron Projection Lithography (EPL), for commercialization. “One of the goals of the NGL Workshop is to build global industry consensus on the NGL options. Today lithographers from around the world agree that EUV and EPL are the technologies necessary to address the unique application of DRAM and ASIC,” said Gerhard Gross, Director of Lithography at International SEMATECH. “This decision is particularly important as NGL technology moves out of the R&D arena into the supplier area and the infrastructure needs to be prepared.” Champions for the NGL technologies presented updates on the progress of their programs against previously defined critical issues. Technologies represented were EUV, X-Ray, EPL, and IPL (Ion-Beam Projection Lithography). In a survey at the conclusion of the Workshop, participants gave their opinions on the progress of the NGL technologies and their preferences for which technologies to use at different feature sizes. The following technologies were the top preferences in nodes defined by the International Technology Roadmap for Semiconductors:

130 nm: 248 nm optical and 193 nm optical 100 nm: 193 nm optical and 157 nm optical 70 nm: 157 nm optical, EPL and EUV 50 nm: EUV and EPL 35 nm: EUV

“Commercial equipment suppliers are increasing their involvement in NGL through prototype tools planned for completion as early as year-end 2003,” said John Canning, Program Manager of NGL at International SEMATECH. “However, there still remain fundamental critical issues that require increased R&D efforts before these two approaches can get the full industry go-ahead for insertion at the 70 nm node.“ For EUV, the remaining critical issues include: defect-free multi-layer coated mask blanks, defect-free mask manufacturing, source and condenser optics reliability, cost-of-ownership, and reticle defect control solution. For EPL, the remaining critical issues include: demonstration of seam blending/stitching, defect-free mask manufacturing including stress control for membrane and stencil masks, experimental data on beam blur and its relation to throughput versus feature size, reticle defect control solution, and demonstration of a solution for wafer heating. More than 150 lithographers from North America, Europe, and Asia representing semiconductor manufacturers, lithography suppliers, and research institutes attended the one-day workshop held September 25 in Reston, Virginia. In addition to building consensus on industry-wide lithography direction, the workshop also guides International SEMATECH’s funding decisions for specific lithography technologies. The next NGL Workshop is tentatively scheduled for September 2001. Based in Austin, Texas, International SEMATECH is a non-profit research and development consortium of the following semiconductor manufacturers: AMD, Conexant, Hewlett-Packard, Hyundai, Infineon Technologies, Intel, IBM, Lucent Technologies, Motorola, Philips, STMicroelectronics, TSMC, and Texas Instruments. Additional information on International SEMATECH can be found at http://www.sematech.org.

October 6, 2000 - SEMATECH · October 6, 2000 Dear NGL Workshop ... X-Ray, EPL, and IPL — for the...

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