NSF Center for GRid-connected Advanced Power …...Near-RF Range Near-RF Range GRid-Connected...

GRid-Connected Advanced Power Electronic Systems

Confidential – Semi-Annual Meeting – May 2017

NSF Center for GRid-connected Advanced Power Electronic Systems (GRAPES)

GR-17-12 Extensive Comparative Study on High Power Inverters Using Various

Switching Devices

Robert Cuzner and Adel Nasiri

University of Wisconsin-Milwaukee

Semi-Annual Meeting

May 23, 2017



Project Overview 2

Anticipated Project Dates: July 1, 2017-June 30,

2018

PI Names: Robert Cuzner and Adel Nasiri

Overall Project Budget: $56,282

One month summer salary for the PI (including fringe): $15,522

50% annual support for one graduate students: $37,760

(including tuition remission)

Supplies: $1,500

Domestic Travel: $1,500



Wide Bandgap (WBG) Semiconductor

WBG semiconductos are materials that possess bandgaps significantly greater

than silicon.

Higher Eg means an electron is less probable to go though this band when

temperature increases.

WBG permits devices to operate at higher temperatures, voltages and

frequencies.

Adaption has been limited much of it due to higher cost.

3

Material Symbol Bandgap Energy Eg (eV)

Silicon Si 1.1

Silicon Carbide SiC 3.3

Gallium Nitride GaN 3.4

Diamond C 5.5



GaN Power Semiconductor Timeline 4



5

$5,000

2 inch Wafer

$1,500

4 inch Wafer

$750

4 inch Wafer

SiC Power Semiconductor Timeline



Power Devices Technology Positioning 6



7

Drivers

• Lower losses

• Higher switching frequencies

• Higher operating temperature

• Enables smaller systems; size, weight

and cost reductions

• Robust, reliable, radiation-hard

• High breakdown voltage

• GaN prices nearer to Si

• GaN has no body diode

• Device integration on Si

Inhibitors

• High SiC material costs

• Design inertia: the reluctance to

change

• Not drop-in swap for Si

• Proof of reliability

• High-temperature, high-frequency

packaging

• Availability; few 2nd sources

• GaN defects

• GaN-on-Si material mismatch

Areas where UWM Project could help most.

WBG Growth Drivers vs. Inhibitors



Converter System Block Diagram

Holistic approach for WBG devices adaption

Device Selection (Si, SiC, GaN)

Device maximum utilization

Optimum Switching Frequency

Thermal Management

8



Design Consideration and Optimization 9

DC Bus Voltage

DC Bus capacitor sizing

Modeling of parasitics

Busbar design consideration

Devices Thermal

Simulation

Thermal characteristic

Max operating temperature

Practical consideration

Gate drivers

Power supply sizing

Isolation/EMI

Fault protection/Detection

Cooling

Thermal analysis

Consideration

PWM Scheme

Control technique

Control capability



Wide Band Gap Opportunity and Challenge10

-80

-60

-40

-20

0

20

40

60

1.00E+03 1.00E+04 1.00E+05 1.00E+06 1.00E+07 1.00E+08

VaP, SiC

-80

-60

-40

-20

0

20

40

60

1.00E+04 1.00E+05 1.00E+06 1.00E+07 1.00E+08

VaP, SiC

> 10x switching frequency may lead to significant increases in power density and

attendant system cost reductions, but high frequency effects must be managed from

the filter design to the package

Near-RF Range Near-RF Range



EMI Filter Design Methodology11

Per Phase DM Circuit

CM Circuit

2 3 ∙ 𝑉𝑎𝑃 − 1 3 ∙ 𝑉𝑏𝑃 + 𝑉𝑐𝑃

𝑉𝑎𝑃 + 𝑉𝑏𝑃 + 𝑉𝑐𝑃3

Reflect to LISN

Reflect to LISN

Determine

Attenuation

Find optimal L & C to

minimize volume.

Understand how components

scale with power rating



12

EMI filter for the three

phase circuit and the LISN

EMI filter equivalent circuit per phase

including LISN with only DM components

EMI filter equivalent circuit including

LISN with only CM components

—— Input current

—— LISN current

—— IEC 61000-3-4

—— FCC B

Note that the FCC-B high

frequency limits are the

driver. Therefore, a better

understanding of high

frequency behavior in the

MHz region is required



Simulation Tool: ANSYS Simplorer13

Convert from Datasheets to the library



14



15

Parametric Analysis:

See the effect of parameter variation

on the system response and losses.

Library Management:

Build a detailed thermal or

magnetic model of a component in

one software, store it into the

library, and use it in another ANSYS

software or even 3rd party softwares

like Matlab/Simulink.



• Device model development of selected Si and SiC

• Complete device characterization of both Si and SiC

• Thermal simulation and analysis of devices

• Complete studies on design of Gate-driver circuitry.

• Practical consideration and optimization.

• Busbar design

• Parasitic analysis

• Control methodology

• EMI consideration and mitigation

16Main Deliverables



This work completely aligned with the discussions in

GRAPES strategic planning meeting and Needs

document.

The comparative analysis would provide design

inertia to members and increase adaption of WBG

device.

The work will lead to the development of more high

performance power electronics systems across

different application.

The work will also leads to full utilization of WBG

capability which results in performance that are

unimaginable in today’s Silicon

17Broader Impact of the Project



References

18

[1] HIS Technology (http://technology.ihs.com): The World Market for Silicon

Carbide & Gallium Nitride Power Semiconductors – 2016 Edition

[2] Yole Development: Status of the Power Electronics Industry report, Feb. 2015.

[3] J. Liao, R. Eden “Market Forecasts For Silicon Carbide & Gallium Nitride

Power Semiconductors IHS Technology” in APEC Conference 2016

18

http://technology.ihs.com/

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