NRP SYMPOSIUM PRESENTATION - NTU Singapore · 2019. 4. 25. · NRP SYMPOSIUM PRESENTATION SPMS04 Li...
Transcript of NRP SYMPOSIUM PRESENTATION - NTU Singapore · 2019. 4. 25. · NRP SYMPOSIUM PRESENTATION SPMS04 Li...
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NRP SYMPOSIUM PRESENTATION
SPMS04
Li Jiang Rong
River Valley High School
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Spin Orbit Torque-Based Synaptic Devices in an Artificial
Neural Network
2
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1.RATIONALE
Significance of Project
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SMALLER devices withHIGHER data density
4
8-Bit Data
1 1 1 1 1 1 1 100000000
ConventionalElectronics Spintronics
VS
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INCREASINGpower consumption
5
Transistors Power
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2.AIMS
Objectives of Project
6
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Device Size Dependence
Device Size
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(100 nm – 800 nm) No. of Resistance States
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Hopfield Network
8
Character Recognition
Simulation of SOT devices
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3.METHODOLOGY
Experimental Procedures
9(Device Size Dependence)
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1 2
SOT Devices
(Device Size Dependence)
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Magnetron Sputtering
1
Electron Beam Lithography Ion Milling
(Device Size Dependence)
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MagnetronSputtering
Si/SiO2 Substrate
1
[
[[[
Ta[Co/Pt]4
Ta
Electron Beam Lithography Ion Milling
(Device Size Dependence)
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Electron Beam Exposure
1
Electron BeamLithography
Substrate
Positive Resist
Substrate
Negative Resist
Substrate
Substrate Substrate
Substrate
Magnetron Sputtering Ion Milling
(Device Size Dependence)
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Removing material to a desired depth (17.2 nm)
1
Ion Milling
Substrate
Magnetron Sputtering
Electron Beam Lithography
(Device Size Dependence)
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2
Computer with
LabVIEW programme
Keithley 2400 source meter to send Iwrite pulses
Sample
Electromagnets
Motor with 1.8°
rotation step size
Field-Induced
Current-Induced
&
Arduino to control
motor
(Device Size Dependence)
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2
Field-Induced
Current-Induced
&
(Device Size Dependence)
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4.RESULTS ANALYSIS
Discussion of Project
17(Device Size Dependence)
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Field-Induced
-10 -8 -6 -4 -2 0 2 4 6 8 10
-1
0
1
2
3
4
5
6
7
()
93.6
91.8
90.0
88.2
86.4
RH (
)
H (kOe)
-8 -6 -4 -2 0 2 4 6 8
0
1
2
3
4
5
6
7
8
9
()
93.6
91.8
90.0
88.2
86.4
RH (
)
H (kOe)
f) h)-8 -6 -4 -2 0 2 4 6 8
0
1
2
3
4
5
6
7
8
(o)
93.6
91.8
90.0
88.2
86.4
H (kOe)
RH (
)
-8 -6 -4 -2 0 2 4 6 8
-2
-1
0
1
2
3
4
5
6
7
(o)
93.6
91.8
90.0
88.2
86.4
RH (
)
H (kOe)
a) b)
-8 -6 -4 -2 0 2 4 6 8
-1
0
1
2
3
4
5
6
7
(o)
93.6
91.8
88.2
86.4
84.6
RH (
)
H (kOe)
c)
-8 -6 -4 -2 0 2 4 6 8
2
3
4
5
6
7
8
9
()
93.6
91.8
90.0
88.2
86.4
RH (
)
H (kOe)
d)
-8 -6 -4 -2 0 2 4 6 8
0
1
2
3
4
5
6
7
8
9
()
93.6
91.8
90.0
88.2
86.4
RH (
)
H (kOe)
e)
-8 -6 -4 -2 0 2 4 6 8
0
1
2
3
4
5
6
7
8
9
()
93.6
91.8
90.0
88.2
86.4
RH (
)
H (kOe)
g)
(Device Size Dependence)
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Current-Induced
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
RH (
)
J (107 A/cm
2)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
RH (
)
J (107 A/cm
2)
a) b)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
RH (
)
J (107 A/cm
2)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
RH (
)
J (107 A/cm
2)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
J (107 A/cm
2)
RH (
)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RH (
)
J (107 A/cm
2)
e) f) g) h)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
RH (
)
J (107 A/cm
2)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-3.6
-3.4
-3.2
-3.0
-2.8
-2.6
-2.4
RH (
)
J (107 A/cm
2)
c) d)
(Device Size Dependence)
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3.METHODOLOGY
Experimental Procedures
20(Hopfield Network)
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21
1
0 5 10 15 20 25 30
0
50
100
150
200
250
300
350
400
450
Nu
mbe
r o
f S
yn
apse
s
Number of Neurons
300 synapses needed in a 5x5 block pattern
(Hopfield Network)
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22
2
SOT devices as synaptic weights
(Hopfield Network)
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23
3
SOT devices as synaptic weights
-15 -10 -5 0 5 10 15
-1
0
1
2R
H (
)
J (107 A/cm
2)
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
(
a.u
.)
(Hopfield Network)
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4.RESULTS ANALYSIS
Discussion of Project
24(Hopfield Network)
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Hopfield Network3
Character recognition of letters ‘R’, ‘V’, ‘H’ and ‘S’
(Hopfield Network)
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Hopfield Network3
Character recognition of letters ‘R’, ‘V’, ‘H’ and ‘S’
(Hopfield Network)
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5.CONCLUSION
Future Implications of Project
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• Engineer devices with specific switching characteristics
• Work towards energy-efficient brain-inspired computing
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References
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1. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, H. Ohno. (March, 2017). Device-size
dependence of field-free spin-orbit torque induced magnetization switching in
antiferromagnet/ferromagnet structures. Applied Physics Letters, 110, 092410.
2. William A. Borders, Hisanao Akima et al. (December, 2016). Analogue spin-orbit torque
device for artificial-neural-network-based associative memory operation.Applied
Physics Express 10, 013007.
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THANK YOU!