NIST NASA CNT Workshop 2007 Bz Poster

1
Production of Highly-Pure, Semitransparent Single-Walled Carbon Nanotube Membranes for Standard Reference Materials and Conductive Thin Films B. Zhao , H. Hu, D. B. Geohegan, A. A. Puretzky, D. Styers-Barnett, I. Ivanov, P. Britt and C. M. Rouleau the Center for Nanophase Materials Sciences and Materials Science & Technology Division Oak Ridge National Laboratory, Oak Ridge, TN Conclusion A multi-step purification method, including nitric acid oxidation, thermal annealing, H 2 O 2 oxidation, and surfactant washing, have applied to purify SWNTs. The highest purity of purified SWNTs reaches 232% against reference sample. Prototype solid-sample SWNT reference materials have been produced by depositing highly-pure SWNTs on TEM grids for TEM and optical absorption spectroscopy assessment on the same solid sample. The surface resistance of the SWNT films, which is 97ohm/sq at T=65%, can also be used to characterize the reference material. Future Work Continue on optimizing purification method of SWNTs. increase purity, decrease metal residue, improve yield Optimization of SWNT thin film production to achieve high transmittance and low surface resistance. Acknowledgement This research was conducted in the Functional Nanomaterials Theme at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, U.S. Department of Energy. Collaboration: please visit http://www.cnms.ornl.gov for user project information. Characterization of SWNTs Purity Evaluation of SWNTs Tools to assess SWNT purity: SEM and TEM amorphous carbon and defect sites TGA metal content NIR spectroscopy interband transition Raman spectroscopy D/G ratio Results: NIR: very high purity 232%! Raman: D/G ratio decreased from 9:1 to 30:1. TGA: metal residue decreased to 1wt%. Dispersible by DMF, SDS/H 2 O, etc. 0.26 0.37 0.39 0.58 0.58 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 12M/4h 7M / 18h 3M/48h 3M/18h 7M/6h Nitric Acid Effects to SWNTs Conditi on Purity (%) Yield (%) Met. Residue (wt%) Purification Effect* 12M/4h 51 52 1.7 0.26 7M/18h 88 42 2 0.37 3M/48h 74 53 2 0.39 3M/18h 83 70 2.2 0.58 7M/6h 80 73 2.4 0.58 * Purification Effect = Purity X Yield TGA data Raman Spectroscopy 500 1000 1500 0 20000 40000 Raman Intensity (a.u.) Raman Shift (cm -1 ) 0 10000 20000 tangential mode disorder band Radial mode l exc = 633 nm AP-SWNT G/D=9:1 P-SWNT G/D=30:1 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 655 residue: 1% Purified SWNT Weight (%) Temperature ( o C) 0 20 40 60 80 100 586 residue: 10% AP-SWNT 0 1 2 0.0 0.5 1.0 ref. sample*: A(S):[A(S)+A(B)] = 0.141 *M. E. Itkis, et. al. Nano Lett. 2003. Solution Phase NIR Spectroscopy For Carbonaceous Purity Study 400 600 800 1000 1200 0.00 0.05 0.10 0.15 0.20 0.25 0.00 0.05 0.10 0.15 0.20 0.25 Absorption Intensity (a.u.) Wavelength (nm) P-SWNT A(S) A(B) AP-SWNT A(S) A(B) A(S):[A(S)+A(B)] = 0.072 A(S):[A(S)+A(B)] = 0.326 Compared to ref. sample*, our SWNT’s purity are: As-prepared SWNT: 50% Purified SWNT: 232% Co-Ni/C target Furnace: 1150 o C Ar 1000 sccm laser carbon nanotube deposition quartz tube Pressure: 500 Torr 1J/500Hz/1ms 10 gram scale production Single walled carbon nanotubes Production of SWNTs by Laser Ablation 1) HNO 3 12M/4h 2) centrifuge/decantation Acid Treated SWNTs 30% H 2 O 2 treatment Raw SWNTs Purified SWNTs Ultra-Purified SWNTs 500 o C, air, 30min wash with 6M HCl dry under vacuum remove metal catalyst remove amorphous carbon exfoliate SWNT bundle introduce functionalities Purity: 30~60% Metal: 10~15wt% Purity: 160~200% Metal: 3~5wt% Yield: 8~10% Purity: 210~230% Metal: ~1wt% Yield: 4~5% remove amorphous carbon remove amorphous carbon remove metal catalyst Purity: 80~120% Metal: 2~3wt% Yield: 40~60% Production of Single Walled Carbon Nanotubes P-SWNT dispersion (1) filtration (2) deposition grid before deposition grid after deposition 500 1000 1500 2000 2500 0 10 20 30 40 50 60 70 80 90 100 grid 1 grid 2 grid 3 Transmittance (%) Wavelength (nm) 10 um 200 nm solution filter membrane transparent thin film Production of SWNT thin films SWNT film on TEM grid 60 65 70 75 80 85 90 95 100 100 1000 SWNT film SWNT film (SOCl 2 doped) Surface Resistance (ohm/sq) Transmittance (%, at 550nm) 4 point probe SWNT Films on Glass: Optical Transmittance and Surface Resistance Study SWNT Films on Substrates and Grids Transmittance measurement Surface resistance measurement Standard sample for purity evaluation SWNT Films on TEM Grids: Standard Sample for Purity Study optical spectra Abstract The first prototype solid-sample SWNT reference materials have been produced by depositing highly-pure SWNTs on TEM grids to permit both transmission electron microscopy and optical absorption spectroscopy on the same solid sample. The electrical conductivity of the SWNT films can also be used to characterize the reference material by depositing the same semitransparent SWNT membranes on glass substrates. SWNTs were synthesized by high-power (600 W) laser ablation of carbon targets with Ni and Co as catalysts in 20 gram/run batches. The purification was carried in 10 gram batches, following nitric acid refluxing, controlled-pH water-extraction, and hydrogen peroxide treatment. The purity of the purified SWNTs was evaluated with SEM, TEM, TGA, and solution phase NIR spectroscopy. The purified SWNTs contain metal residue less than 1% and carbonaceous purity among the highest ever reported. Prototype standard SWNT reference materials were produced by depositing purified SWNTs on TEM grids, which can be used for purity comparison with other SWNT samples. Transparent thin films of purified SWNTs were produced by dispersion/filtration/transferring method. The surface resistance of SWNT films is lower than 100 ohm/sq with transmittance of 65%, which is comparable to the best reported SWNT thin films. Purity assessment based on NIR spectra Direct observation of SWNT sample via TEM Both 500 1000 1500 2000 2500 0 20 40 60 80 100 Transmittance (%) Wavelength (nm) 93 89 84 73 64 550nm Transmittance (550nm) SEM and TEM images of SWNTs metal residue amorphous carbon

Transcript of NIST NASA CNT Workshop 2007 Bz Poster

Page 1: NIST NASA CNT Workshop 2007  Bz  Poster

Production of Highly-Pure, Semitransparent Single-Walled Carbon Nanotube

Membranes for Standard Reference Materials and Conductive Thin Films

B. Zhao, H. Hu, D. B. Geohegan, A. A. Puretzky, D. Styers-Barnett, I. Ivanov, P. Britt and C. M. Rouleau

the Center for Nanophase Materials Sciences and Materials Science & Technology Division

Oak Ridge National Laboratory, Oak Ridge, TN

Conclusion A multi-step purification method, including nitric acid oxidation, thermal

annealing, H2O2 oxidation, and surfactant washing, have applied to purify SWNTs.

The highest purity of purified SWNTs reaches 232% against reference sample.

Prototype solid-sample SWNT reference materials have been produced by

depositing highly-pure SWNTs on TEM grids for TEM and optical absorption

spectroscopy assessment on the same solid sample.

The surface resistance of the SWNT films, which is 97ohm/sq at T=65%, can

also be used to characterize the reference material.

Future Work Continue on optimizing purification method of SWNTs.

increase purity, decrease metal residue, improve yield…

Optimization of SWNT thin film production to achieve high transmittance and low

surface resistance.

AcknowledgementThis research was conducted in the Functional Nanomaterials Theme at the

Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge

National Laboratory by the Division of Scientific User Facilities, U.S. Department

of Energy.

Collaboration: please visit http://www.cnms.ornl.gov for user project information.

Characterization of SWNTs

Purity Evaluation of SWNTs

Tools to assess SWNT purity:

SEM and TEM – amorphous carbon and defect sites

TGA – metal content

NIR spectroscopy – interband transition

Raman spectroscopy – D/G ratio

Results:

• NIR: very high purity 232%!

• Raman: D/G ratio decreased from 9:1

to 30:1.

• TGA: metal residue decreased to 1wt%.

• Dispersible by DMF, SDS/H2O, etc.

0 . 2 6

0 . 3 70 . 3 9

0 . 5 8 0 . 5 8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

12M /4h 7M /18h 3M /48h 3M /18h 7M /6h

Nitric Acid Effects

to SWNTs

Conditi

on

Purity

(%)

Yield

(%)

Met. Residue

(wt%)

Purification

Effect*

12M/4h 51 52 1.7 0.26

7M/18h 88 42 2 0.37

3M/48h 74 53 2 0.39

3M/18h 83 70 2.2 0.58

7M/6h 80 73 2.4 0.58

* Purification Effect = Purity X Yield

TGA data

Raman Spectroscopy

500 1000 15000

20000

40000

Ram

an In

tensity (

a.u

.)

Raman Shift (cm-1)

0

10000

20000

tangential

modedisorder

band

Radial

mode

lexc = 633 nm

AP-SWNT

G/D=9:1

P-SWNT

G/D=30:1

100 200 300 400 500 600 700 800 900 10000

20

40

60

80

100655

residue: 1%Purified SWNT

We

igh

t (%

)

Temperature (oC)

0

20

40

60

80

100

586

residue: 10%AP-SWNT

0

1

2

0.0

0.5

1.0

ref. sample*: A(S):[A(S)+A(B)] = 0.141

*M. E. Itkis, et. al. Nano Lett. 2003.

Solution Phase NIR Spectroscopy

For Carbonaceous Purity Study

400 600 800 1000 12000.00

0.05

0.10

0.15

0.20

0.25

0.00

0.05

0.10

0.15

0.20

0.25

Absorp

tion Inte

nsity (

a.u

.)

Wavelength (nm)

P-SWNT

A(S)

A(B)

AP-SWNT

A(S)

A(B)

A(S):[A(S)+A(B)] = 0.072

A(S):[A(S)+A(B)] = 0.326

Compared to ref. sample*, our SWNT’s purity are:

As-prepared SWNT: 50%

Purified SWNT: 232%

Co-Ni/C target

Furnace: 1150oC

Ar

1000 sccm

laser

carbon

nanotube

deposition

quartz tube

Pressure: 500 Torr

1J/500Hz/1ms

10 gram scale production

Single walled

carbon nanotubes

Production of SWNTs

by Laser Ablation

1) HNO3 12M/4h

2) centrifuge/decantation

Acid Treated SWNTs

30% H2O2 treatment

Raw SWNTs

Purified SWNTs

Ultra-Purified SWNTs

500oC, air, 30min

wash with 6M HCl

dry under vacuum

• remove metal catalyst

• remove amorphous carbon

• exfoliate SWNT bundle

• introduce functionalities

Purity: 30~60%

Metal: 10~15wt%

Purity: 160~200%

Metal: 3~5wt%

Yield: 8~10%

Purity: 210~230%

Metal: ~1wt%

Yield: 4~5%

• remove amorphous carbon

• remove amorphous carbon

• remove metal catalyst

Purity: 80~120%

Metal: 2~3wt%

Yield: 40~60%

Production of Single Walled

Carbon Nanotubes

P-SWNT dispersion

(1) filtration

(2) deposition

grid

before

deposition

grid

after

deposition

500 1000 1500 2000 25000

10

20

30

40

50

60

70

80

90

100

grid 1

grid 2

grid 3

Tra

nsm

itta

nce (

%)

Wavelength (nm)

10 um

200 nm

solution filter

membrane

transparent

thin film

Production of SWNT thin films SWNT film on TEM grid

60 65 70 75 80 85 90 95 100

100

1000

SWNT film

SWNT film (SOCl2 doped)

Su

rfa

ce

Re

sis

tan

ce

(o

hm

/sq

)

Transmittance (%, at 550nm)

4 point

probe

SWNT Films on Glass:

Optical Transmittance and Surface Resistance Study

SWNT Films on Substrates and Grids

Transmittance measurement

Surface resistance measurement

Standard sample for purity evaluation

SWNT Films on TEM Grids:

Standard Sample for Purity Study

optical

spectra

Abstract

The first prototype solid-sample SWNT reference materials have been

produced by depositing highly-pure SWNTs on TEM grids to permit both

transmission electron microscopy and optical absorption spectroscopy on

the same solid sample. The electrical conductivity of the SWNT films can

also be used to characterize the reference material by depositing the

same semitransparent SWNT membranes on glass substrates. SWNTs

were synthesized by high-power (600 W) laser ablation of carbon targets

with Ni and Co as catalysts in 20 gram/run batches. The purification was

carried in 10 gram batches, following nitric acid refluxing, controlled-pH

water-extraction, and hydrogen peroxide treatment. The purity of the

purified SWNTs was evaluated with SEM, TEM, TGA, and solution phase

NIR spectroscopy. The purified SWNTs contain metal residue less than

1% and carbonaceous purity among the highest ever reported. Prototype

standard SWNT reference materials were produced by depositing

purified SWNTs on TEM grids, which can be used for purity comparison

with other SWNT samples. Transparent thin films of purified SWNTs were

produced by dispersion/filtration/transferring method. The surface

resistance of SWNT films is lower than 100 ohm/sq with transmittance of

65%, which is comparable to the best reported SWNT thin films.

Purity assessment based

on NIR spectra

Direct observation of

SWNT sample via TEM

Both

500 1000 1500 2000 25000

20

40

60

80

100

Tra

nsm

itta

nce (

%)

Wavelength (nm)

93

89

84

73

64550nm Transmittance (550nm)

SEM and TEM images of

SWNTs

metal residue

amorphous carbon