New EDITORIAL STAFFEDITORIAL STAFF · 2012. 2. 7. · Elected for a three-year term (maximum two...

January 2008 Vol. 15, No. 1 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected]

Table of ContentsUpcoming Technical Meetings . . . . . . . . . . 1

• 2008 ICMTS • 2008 ISPSD• 2008 PVSC • 2008 IVEC

EDS Region 9 Chapters Meeting Summary 3Society News . . . . . . . . . . . . . . . . . . . . . . . . 7

• EDS Meetings Committee Report• EDS Photovoltaic Devices Committee Report• EDS Senior Member Program• 2006 EDS George E. Smith Award• Congratulations to the EDS Members

Recently Elected to IEEE Senior Member Grade• 2007 EDS Ph.D. Student Fellowship Winners• 2006 EDS Paul Rappaport Award• 2007 EDS Masters Student Fellowship Winners• EDS Distinguished Lecturer Visits Indian Institute

of Science, Bangalore• 2008 EDS Ph.D. Student Fellowship

Call for Nominations• 2008 EDS Masters Student Fellowship

Final Call for Nominations• 2006-2007 EDS Region 9 Outstanding

Student Paper Award Call for Nominations• Transactions on Semiconductor Manufacturing

2006 Best Paper Award Presented• Call for IEEE Fellow Nominations• NADE - IEEE EDS/SSCS Mini-Colloquium

in Romania• EDS Distinguished Lecturers Participate in

WIMNACT-13, Held in Hong Kong and Singapore• EDS Archival Collection on DVD

Regional and Chapter News . . . . . . . . . . . 22EDS Meetings Calendar . . . . . . . . . . . . . . . 30IEEE Mentoring Connection Program . . . 32

The 2008 IEEE International Conference on Microelectronic TestStructures (ICMTS) will be held in the University of Edinburgh,which recently celebrated its 400th anniversary. This meeting isthe 21st anniversary of the ICMTS and the second time the con-ference has visited Edinburgh. The conference is sponsored bythe IEEE Electron Devices Society in cooperation with the Univer-sity of Edinburgh and the Scottish Microelectronics Centre andtechnically co-sponsored by the IEEE Solid State Circuits Society.

The first ICMTS was held in Long Beach in 1988, and since thenhas cycled between Europe, North America, and Asia. The pur-pose of the meeting is to bring together designers and users oftest structures to discuss recent developments and future direc-tions. To this end the conference will be held on March 25-27,2008 and will be preceded by a one-day Tutorial Short Course onMicroelectronic Test Structures on March 24, 2008. There will alsobe an equipment exhibition relating to test structure measure-ments. The topics addressed at ICMTS include:

(continued on page 10)

2008 IEEE InternationalConference on

Microelectronic TestStructures (ICMTS)

San

dra

Wal

ton

2008 IEEE InternationalConference on

Microelectronic TestStructures (ICMTS)

2 IEEE Electron Devices Society Newsletter ❍ January 2008

President

Ilesanmi AdesidaUniversity of IllinoisE-mail: [email protected]

President-Elect

Cor L. ClaeysIMECE-mail: [email protected]

Treasurer

Stephen A. ParkeTennessee Tech UniversityE-Mail: [email protected]

Secretary

John K. LowellConsultantE-Mail: [email protected]

Jr. Past President

Hiroshi IwaiTokyo Institute of TechnologyE-mail: [email protected]

Sr. Past President

Steven J. HilleniusSemiconductor Research Corp.E-mail: [email protected]

Vice-President of Awards

Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

Vice-President of

Educational Activities

Paul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

Vice-President of Meetings

Jon J. CandelariaMotorolaE-mail: [email protected]

Vice-President of Membership

Albert Z. H. WangUniversity of California, RiversideE-Mail: [email protected]

Vice-President of Publications

Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

Vice-President of Regions/

Chapters

Juin J. LiouUniversity of Central FloridaE-Mail: [email protected]

Vice-President of Technical Activities

April S. BrownDuke UniversityE-Mail: [email protected]

IEEE Newsletters

Paul Doto, Paul DeSessoIEEE Operations CenterE-Mail: [email protected],[email protected]

Executive Director

William F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

Business Coordinator

Joyce LombardiniIEEE Operations CenterEmail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in theSociety fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send addresschanges to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, Piscataway, NJ 08855.

Copyright © 2008 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

Elected for a three-year term (maximum two terms) with ‘full’ voting privileges

2007 Term 2008 Term 2009 Term

J. N. Burghartz (1) G. Baccarani (1) S. S. Chung (2)M. J. Chan (1) J. Deen (1) R. Huang (1)M. Estrada del Cueto (2) F. J. Garcia Sanchez (2) R. P. Jindal (1)S. Ikeda (1) J.B. Kuo (1) M. Lundstrom (2)R. J. Nikolic (1) J.J. Liou (2) H. S. Momose (1)N. D. Stojadinovic (2) H. Shang (1) A. Z. H. Wang (2)J. J. Wesler (1) J. W. Swart (1) X. Zhou (2)

S. Tyagi (1)

ELECTRON DEVICESSOCIETY

ELECTRON DEVICESSOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

The EDS Newsletter archive can be found on the Society web site athttps://www.ieee.org/portal/pages/society/eds/pubs/newsletters/newsletter.html. The archive contains issues from July 1994 to the present.

REGIONS 1-6, 7 & 9

Eastern, Northeastern & South-

eastern USA (Regions 1, 2 & 3)

Ibrahim M. Abdel-MotalebNorthern Illinois UniversityE-Mail: [email protected]

Central USA & Canada

(Regions 4 & 7)

Jamal DeenMcMaster UniversityE-Mail: [email protected]

Southwestern & Western USA

(Regions 5 & 6)

Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)

Jacobus W. SwartState University of CampinasE-mail: [email protected]

REGION 8

Eastern Europe & The Former

Soviet Union

Alexander V. GridchinNovosibirsk State Technical UniversityE-mail: [email protected]

Scandinavia & Central Europe

Andrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & Africa

Zhirun HuUniversity of ManchesterE-mail: [email protected]

Western Europe

Cora SalmUniversity of TwenteE-Mail: [email protected]

REGION 10

Australia, New Zealand &

South Asia

Xing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast Asia

Kazuo TsutsuiTokyo Institute of TechnologyE-mail: [email protected]

East Asia

Hei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTEREDITORIAL STAFF

NEWSLETTEREDITORIAL STAFF

January 2008 ❍ IEEE Electron Devices Society Newsletter 3

On September 8, amidst the celebra-tion of Brazil’s Independence Day, andimmediately after SBMicro 2007, EDSRegion 9 held its one-day biennialChapters Meeting. It was presided overby EDS President-Elect Cor L. Claeys,EDS VP of Regions/Chapters Juin Liou,EDS Region 9 SRC Chair Magali Estra-da del Cueto and EDS Executive Direc-tor William F. Van Der Vort.

An overview of IEEE EDS servicesand statistics, in particular those relat-ed to publications and membership,was given by Cor Claeys, who men-tioned, among other things, that EDShas 11,219 members worldwide, and139 EDS Chapters. He also pointed outthat the maximum subsidy to ‘EDSonly’ chapters for next year will againbe raised from $1,000 to $1,500.

Juin Liou talked about worldwideEDS chapter number trends. At pre-sent, Region 10 (Asia) is growing fasterthan the rest: its number of chaptersmore than doubled from 2001 to pre-sent. He also mentioned that the num-ber of subsidies awarded to chaptersalmost doubled from 1996 to 2007,while the average amount per subsidymore than tripled. Juin estimates thatthere are 46 potential new chapters inthe 10 EDS regions.

Present membership in Region 9and current plans for activities wereoutlined by Magali Estrada. Ourregion, with a membership of 168,has, in Brazil, chapters in Recife, Brasil-ia, Rio de Janeiro, South Brazil (SaoPaulo and Campinas) and the Univer-sidad Estadual de Campinas (StudentBranch), while in Mexico it has chap-ters in Mexico City, Puebla, Cinvestav-IPN (Student Branch), UniversidadCristóbal Colón (Student Branch), Uni-versidad del Sol (Student Branch), Uni-versidad Veracruzana (StudentBranch). Caracas, Venezuela, has onechapter (CAS/ED/PEL). In total, Region9 has twelve chapters, and there aretwo more in the process of formation,one in Buenos Aires, Argentina, andanother one in Lima, Perú. ChapterChairs from 11 of the 12 currentRegion 9 chapters attended the meet-ing, and also the representatives fromLima and Buenos Aires. Prof. MagaliEstrada also reminded the audience

that IEEE EDS supports two yearlysymposiums in the region: the Sym-posium on Microelectronics Technolo-gy and Devices (SBMicro), held inBrazil, and the International Confer-ence on Electrical and ElectronicsEngineering (ICEEE). The Society alsosupports the biennial InternationalCaribbean Conference on Devices, Cir-cuits and Systems (ICCDCS).

Chapter activities, plans and con-cerns, were explained to the audienceby the Chapter Chairs of the region.The chapters held thirty DL lectures intwo years, which covered topics asdiverse as solid state lighting, nano-scale devices and nano-technology,including TMOS, SOI MOSFET’s, nano-mems and strain engineering. Othersubjects included integrated biosen-sors, plastic microelectronics, MOSFETbreakdown physics, electrostatic dis-charge protection (ESD), quantumtransport, SOI technology, and electrondevice simulation. Some chaptersreported a participation in local eventssuch as colloquia and symposia, andalso the organization of short courses.

Increasing the number of invitedlecturers to the region is among theplans of the chapters. Chapters alsoexpect to increase membership byactions such as visiting nearby univer-sities, and by strengthening links withexisting EDS/Chapter members.Region 9 also expects to increase thenumber of its DL’s above its presentcount of seven.

The importance of improving/creat-ing chapter web pages was also point-

ed out by chapter representatives, as ameans to intensify communication.This could also help to increase techni-cal collaboration between chapters thatcan be as far apart as 5,000 miles (Mex-ico City-Buenos Aires).

The organizational efforts ofJacobus Swart (South Brazil Chapter),Fran Urbaniak and Bill Van Der Vort(IEEE EDS) are duly appreciated, aswell as the interest of the attendees,who preferred the EDS Region 9 meet-ing over the attractive Copacabanabeach full of cheerful people celebrat-ing the national day!

Rodolfo QuinteroED Mexico Chapter Chair

Mexico City, Mexico

EDS Region 9 Chapters Meeting Summary

The Biennial Chapters Meeting in Rio de Janeiro brought together chapter representatives from allover Latin America, as well as AdCom members, including EDS President-Elect Cor Claeys (center)

Organizers of the 2007 EDS Region 9 ChaptersMeeting, (from left) Magali Estrada del Cueto,

Chair of EDS Subcommittee for Regions/Chapters(SRC) for Region 9, Juin Liou, EDS Vice-Presidentof Regions/Chapters, and William Van Der Vort,

EDS Executive Director

EDS Region 9 Chapters Meeting Summary


The 33rd IEEE Photovoltaic SpecialistsConference will be held at the Man-chester Grand Hyatt Hotel in SanDiego, May 11–16, 2008. The world’sleaders in photovoltaics will beattending and presenting the latestinformation on photovoltaic researchand applications. More informationregarding this exciting conference canbe found at http://www.33pvsc.org.

The conference is sponsored bythe IEEE Electron Devices Society.The conference chair is Dr. TimothyJ. Coutts of the National RenewableEnergy Laboratory, Golden, Col-orado. The program chair is Dr. Tim-othy J. Anderson of the University ofFlorida in Gainsville, Florida.

Historically, the mission of thePhotovoltaic Specialists Conferencehas been to present groundbreakingresearch papers on all aspects of PV-relevant materials, devices, systemsand applications. A very strong tech-nical program that will encompass

seven programmatic areas coveringtopics in novel materials and devices,thin-film cells made from CIGS andCdTe and emerging semiconductors,crystalline and amorphous silicon, III-V cells, concentrator devices and sys-tems, and module and systemexperience including reliability stud-ies. It is expected that the increasedinterest in the field of photovoltaicswill lead to greatly increased atten-dance. The deadline for electronicabstract submission is December 10,2007. Contributing authors will benotified of the acceptance of theirpapers following the meeting of theProgram Committee in the third weekof January, 2008.

The Technical Program will becomplemented by six tutorials to bepresented on Sunday, May 11. Thesetutorials will be taught by experts intheir fields and will be valuable tonewcomers to the field of photo-voltaics, as well as to seasoned vet-

erans who wish to learn about recenttrends. It is also expected that theconference industrial exhibition willbe substantially larger than in recentyears because of the greatlyincreased level of interest in photo-voltaics in the USA.

A vigorous auxiliary programwill include daily meetings, semi-nars, and panel discussions ontopics beyond the scope of thetechnical program. It is hoped thatthis auxiliary program will attractmany people to the conferencewho may not normally attend thetechnical program.

The IEEE William R. Cherry Awardis presented at each IEEE PhotovoltaicSpecialists Conference and recog-nizes those who have made outstand-ing contributions to the advancementof photovoltaic science and technolo-gy. This award is named in honor ofWilliam R. Cherry, a founder of thephotovoltaic community.

San Diego is located in a beauti-ful area of southern California. Witha prime waterfront location offeringa resort-like setting with shopping,entertainment and dining at Sea-port Village, the Manchester GrandHyatt San Diego has easy access tothe San Diego Zoo, Sea World, golfcourses, tennis and beaches. It’sonly three miles from the SanDiego International Airport and thetrolley to Mexico stops directlyacross the street.

Jeffrey L. Gray2008 PVSC Publicity Chair

Purdue UniversityWest Lafayette, Indiana, USA

Upcoming Technical MeetingsUpcoming Technical Meetings

2008 IEEE Photovoltaic Specialists Conference (PVSC)

Manchester Grand Hyatt, San Diego, California

2008 IEEE Photovoltaic Specialists Conference (PVSC)


2008 IEEE International Vacuum Electronics Conference (IVEC)

The Ninth IEEE International VacuumElectronics Conference (IVEC 2008) isreturning to the picturesque and his-toric city of Monterey, California onApril 22-24, 2008. The meeting will beheld at the Portola Plaza Hotel underthe sponsorship of the IEEE ElectronDevices Society (EDS). Dr. BaruchLevush of the U.S. Naval Research Lab-oratory will serve as the General Chair,and Dr. Carol L. Kory of CalabazasCreek Research and the Analex Corpo-ration will serve as the Technical Pro-gram Chair. Oversight of theconference is provided by the EDSTechnical Committee on VacuumDevices, an international committeechaired by Dr. Dan M. Goebel of the JetPropulsion Laboratory.

Since its inception in 2000, IVEC hasbecome the premier internationalvenue for presentations in the field ofvacuum electronics. IVEC 2008 contin-ues this tradition, providing a forum forthe presentation and discussion of vac-uum device technology, computationalmodeling and analysis, vacuum micro-and nano-electronics, and applications.A highlight of the meeting will be thepresentation of the IVEC Award forExcellence in Vacuum Electronics, giv-en at the conference banquet. Com-plete details about the meeting and thisaward can be found on the conferenceweb site at http://ivec2008.org.

Plenary talks will provide insightsinto the broad spectrum of scientificissues and applications that are drivingthe current directions in vacuum elec-tronics research. In particular, a num-ber of topical scientific and commercialapplications will be highlighted, includ-ing digital broadcasting, high data-ratecommunications, medical applications,and RF accelerator technology for highenergy physics.

Contributed presentations will spanthe range from UHF to THz frequenciesand will cover a wide range of devicetypes, including traveling-wave tubes,klystrons, multiple-beam devices,inductive output tubes, crossed-fielddevices, fast-wave devices, free elec-tron lasers, pulse compression devices,high pulsed power devices, plasmafilled amplifiers, triodes, tetrodes, pen-

todes, and switches. In the area of vac-uum micro- and nano-electronics, theconference will include papers onmicrowave, millimeter-wave, and THzdevices, displays, sensors, field emitterarrays, and novel fabrication tech-niques. In addition to discrete devices,IVEC 2008 will also feature technicalsessions on subsystems and systems,including component parts such aselectron guns and collectors,microwave power modules, electronicpower conditioners, modulators, pow-er supplies, linearizers, amplifier/anten-na coupling, device and subsystemintegration, and reliability. Theorydevelopment and supporting technolo-gies will be represented by sessions onnumerical simulation and modeling,novel materials, electron emission, RFand high voltage breakdown, linearity,

intermodulation, noise, measurementtechniques, and thermal control.

Developers of systems will find thatIVEC provides a unique snapshot intothe current state-of-the-art in vacuumelectronic devices. These devices con-tinue to provide unmatched powerand performance for advanced elec-tromagnetic systems, particularly inthe challenging frequency regimes ofmillimeter-wave and THz electronics.

Two-page abstracts for IVEC2008 should be submitted electron-ically to Mr. Ralph Nadell of Pal-isades Convention Management [email protected] by January4, 2008. Information on the prepa-rat ion and submission of theabstracts can be found on the con-ference web site.

The IVEC 2008 conference is orga-nized by a Program Committee madeup of representatives of government,industry and university researchers.Members of the 2008 program com-mittee are listed below.

David K. Abe2008 IVEC Publicity Co-Chair

Naval Research LaboratoryWashington, DC, USA

Yehuda Goren2008 IVEC Publicity Co-Chair

Teledyne Electronic TechnologiesRancho Cordova, CA, USA

Monterey. California Coastline

2008 IVEC Organizing Committee

General Chairman: Dr. Baruch Levush, NRLTechnical Program Chair: Dr. Carol L. Kory, CCR/Analex Corp.Plenary Sessions: Dr. David Chernin, SAIC

Dr. Carter Armstrong, L-3 CommunicationsDr. Thomas Grant, CPIDr. Gregory Nusinovich, University of Maryland

Publications: Dr. William MenningerDr. Joan Yater

Local Arrangements: Dr. Monica Blank, CPIDr. David Whaley, L-3 Communications

Awards: Dr. Dan M. Goebel, JPLDr. John H. Booske, University of WisconsinDr. Y. Y. Lau, University of Michigan

Publicity: Dr. David K. Abe, NRLDr. Yehuda Goren, Teledyne

Finance: Dr. Richard True, L-3 CommunicationsDr. John Petillo, SAIC

Meeting Arrangements: Mr. Ralph Nadell, Palisades Convention Management

2008 IEEE International Vacuum Electronics Conference (IVEC)


The IEEE International Symposiumon Power Semiconductors and ICs(ISPSD) is the premier forum fortechnical discussion in all areas ofpower semiconductor devices,power integrated circuits, theirhybrid technologies, and applica-tions. This field is growing rapidlydue to the accelerating interest inenergy efficiency and the ever-increasing power conversiondemands of portable electronicdevices.

The ISPSD attendance is gener-ally close to 400, with authors andconference participants comingfrom all over the world. The con-ference locat ion rotates on athree-year cycle among NorthAmerica, Europe, and Asia. Forexample, the prior three years’venues were: Santa Barbara, Cali-fornia, USA; Naples, Italy; JejuIsland, Korea. For 2008, the confer-ence returns to the USA, and willbe held in Orlando, Florida. Eachof the international regions is well-represented by authors, attendees,and members of the organizingcommittee. The conference alsofeatures a good mix of representa-tives from industry, academia, andgovernment institutions.

The topics presented at ISPSDcover the entire spectrum of powersemiconductor technologies,including processes (crystalgrowth, doping technology, life-time control, passivation), materi-als (si l icon, GaAs, SiC, GaN,diamond), CAD (device and circuitsimulation, layout, verification),power devices (device physics,

modeling, switching, RF power,safe-operating area), power inte-grated circuits ( isolation tech-niques, circuit design, hybrids,ESD, latch-up), packaging (stress,thermal performance), and applica-tions (automotive, telecommunica-tion, displays, power supply, motorcontrol, battery management).

The 25th annual ISPSD will beheld May 18–22, 2008, at the Wyn-dham Orlando Resort in Orlando,Florida, USA. Orlando is one ofthe world’s premier travel destina-tions, hosting more than 50 mil-l ion visitors every year. I t is asafe, vibrant, modern city withexcellent museums, performingarts , hote ls , and restaurants .Orlando boasts the highest con-centration of theme parks in theworld, inc luding Walt DisneyWorld, Universal Studios, SeaWorld, and several water parks.Moreover, it is within driving dis-tance of some of Florida’s mostbeautiful and well-known beach-es, including Daytona Beach. Forthe convenience of attendees andtheir families, the conference willprovide a f ree shutt le serv icebetween the Wyndham Resort andWalt Disney World.

ISPSD 2008 will include fourdays of technical sessions (Mon-day through Thursday), compris-ing several topic-speci f ic ora lpresentat ion sessions and anextensive poster session. In addi-tion, a one-day short-course ses-sion will be offered on the Sundaybefore the conference, providingan excellent tutorial for those who

are new to the power semiconduc-tor field, and a good update forthose who are already involved inthis area. The conference will alsoprovide many opportunities forparticipants to have informal dis-cussions, including daily coffeebreaks, a wine and cheese recep-tion, a conference banquet, andan evening of local entertainment.

More information and registrationfor the 2008 ISPSD can be found on-line at the conference web site:www.ecse.rpi.edu/conf/ispsd08, or bycontacting the General Chair, Profes-sor Paul Chow, at [email protected] authors can submitabstracts via this web site. The dead-line for submission of the abstractwas November 11, 2007. Hotel andconference registration will also beavailable through the web site.

Don Disney2008 ISPSD Publications Chair

Advanced Analogic Technologies, Inc.

Sunnyvale, CA, USA

2008 IEEE International Symposium onPower Semiconductors and ICs (ISPSD)

Wyndham Orlando Resort

2008 IEEE International Symposium onPower Semiconductors and ICs (ISPSD)


Society NewsSociety News

Technical meet-ings, conferences,and symposiasponsored by theElectron DevicesSociety are at thecore of the valuebeing delivered toour IEEE EDSmembership aswell as to the tech-

nical community at large. Given this importance of the tech-

nical conferences and meetings theEDS Meetings Committee is madeup of members from the leadershipof the EDS including the Vice-Presi-dent of Technical Activities, the Vice-President of Regions/Chapters, andthe Society Treasurer. In addition,the committee receives outstandingsupport from the EDS ExecutiveDirector’s Office. The primary pur-pose of the Committee is to developand execute a strategic plan whichincludes guidance and oversight forexisting and newly-created confer-ences, meetings, and symposiaaround the world, especially in thoseregions with newly developing tech-nology-based economies, whichseek support from the ElectronDevices Society. In addition, we alsotake a proactive role and work withother IEEE Societies, the IEEE NewTechnology Directions Committee,and in some cases even technicalSocieties outside of the IEEE toidentifying these emerging areas ofinterest and provide the supportneeded to help establish the appro-priate forums to address them. Thisstrategic plan encourages fiscalresponsibility, continuous improve-ment, alignment across the meet-ings and with the core values andgoals of the EDS and IEEE, andhelps to ensure that they continueto deliver the tremendous technicalvalue our Society’s members havecome to expect and appreciate overthe past several decades of ourexistence.

Starting in 2008, EDS will finan-cially sponsor or co-sponsor 26meetings and will be technical spon-sor or co-sponsor for another 132,for a total of 158. This total numberis up about 10% over last year and isup over 50% within the last 10 years!As a key part of our global strategyto continuously improve services toall of our members and prospectivemembers, we are supporting our his-torically U.S.-only based conferenceswhich are now rotating their eventsthrough other countries, as well asencouraging the development ofnew meetings in under-servedregions of the world. This enhancedstrategy also includes exploring newways to more directly involve andrecruit new student members intoour global meeting processes.

In terms of attendance, the Inter-national Electron Devices Meeting(IEDM) is the largest EDS meetingwith as many as 2000 attendees, andthen there are workshops or regionalmeetings with as few as 40-50 or lessin attendance. They are all importantto bring together audiences aroundthe world to share the latest techni-cal results as well as emerging eco-nomic drivers for the research anddevelopment of these technologies.

The EDS support falls into twocategories: ones where the EDS isthe primary sponsor or co-sponsor(with another IEEE Society or anoth-er professional society) for which weshare financial responsibility, andones where EDS is just a technicalco-sponsor (with another IEEE Soci-ety or another professional society).In the former cases, EDS usually pro-vides a financial advance to assistwith meeting organization and plan-ning and also provides a financialbackstop for the meeting and liabilityinsurance. In return, EDS expects theadvance to be repaid and to receiveany budget surplus from these con-ferences which then goes back tosupport such meetings in the future.This return of budget surplus is one

of our major revenues streams, andfor an average calendar year, thistypically amounts to approximately$350,000 or more.

Technical sponsorship refers tomeetings that the EDS has deter-mined align with the technical scopeof the Society and allows for the useof the IEEE and EDS logos, advancenotices in calendars and official listsof EDS and IEEE meetings. Thesetypes of meetings again are deemedto be of technical interest to themembership with typically somemembership involvement, but theEDS would not have any financialliability or stake in these types ofmeetings.

For an established EDS spon-sored or co-sponsored meeting,plans for the meeting’s next occur-rence and their proposed budget isreviewed by the Executive Office,the Vice-President for Meetings, andthe Treasurer. EDS repeat meetingsscheduled for 2009 will be approvedat the 2007 December AdCom Meet-ing held at the IEDM. Repeat occur-rences of meetings that receivetechnical co-sponsorship only areapproved on the same schedule.Proposed new meetings with orwithout financial involvement arerequired to provide organizationalinformation and plans to the EDSExecutive Office (contact Joyce Lom-bardini, [email protected]) andthis information is reviewed by theMeetings Committee members andrelevant EDS Technical Committeesto determine what, if any, EDSinvolvement should occur.

We welcome your comments andsuggestions for continuously improv-ing the operations of the MeetingsCommittee and in turn we pledge tocontinue to provide a valuable serviceto our EDS membership.

Jon J. CandelariaEDS Vice-President of Meetings

Motorola LabsTempe, AZ, USA

EDS Meetings Committee Report

Jon J. Candelaria

EDS Meetings Committee Report


One of the mostdramatic, if notsignificant, bell-wethers of currentand emergingphotovoltaic R&Dand commercial-ization activitiestook place inMilan, Italy, Sep-tember 3-7, 2007.

The occasion was the 22nd EuropeanPhotovoltaic Solar Energy Conference(EU-PSEC) and Exhibition. The largestsuch conference in the history of theseries in Europe and larger by farthan any of either the IEEE Photo-voltaic Specialists Conferences(PVSC) in the U.S and the Photovolta-ic Science and Engineering Confer-ences (PVSEC) in Japan/Asia, themeeting attracted over 3000 regis-

trants and 500 companies to exhibit atthe venue. Among the technical high-lights: predictions of a limiting effi-ciency for Si-based tandem/quantumdot solar cells of 74% by Martin Greenfrom the University of New SouthWales; data from Spectrolab in theU.S. showing a 40.7% efficient con-centrator cell in a GaInP/GaInAs/Gemonolithic multijunction configura-tion; a record 22.3% efficient, 100sq.cm silicon-based cell from Sanyo;thin film cell efficiencies (CIGS on100sq.cm substrates) at 12.4%; andreports of commercial systemdeployments worldwide exceeding1.7GW in 2006, up from 1.4GW in2005. Growth in the industry isexpected to be similarly constrainedby a shortage of silicon feedstocksupply at least through 2008. Repre-sentatives of the polysilicon supply

industry predict expansion planscurrently announced will bring theavailable supply of polysilicon feed-stock material to over 100,000tonnes by 2010, compared to 36,000tonnes in 2006. About half the totalwas sold to the solar industry in2006. Estimates vary, but the pro-jected available supply in 2010would be enough to produce about8GW of solar panels that year.

The next major conference, the17th PVSEC, will be in Fukuoka,Japan, December 3-7, 2007. The 33rdIEEE PVSC will be held in San Diego,May 11-16, 2008.

Dennis J. FloodEDS Photovoltaic Devices

Technical Committee ChairNorth Coast Initiatives, Ltd.

Obertin, OH, USA

Dennis J. Flood

EDS Photovoltaic Devices Committee Report

The ElectronDevices Societyestablished theEDS Senior Mem-ber Program toboth complementand enhance theIEEE’s Nominate-a-Senior-MemberInitiative and makeIEEE/EDS mem-

bers aware of the opportunity andencourage them to elevate their IEEEmembership grade to Senior Member.This is the highest IEEE grade forwhich an individual can apply and isthe first step to becoming a Fellow ofIEEE. If you have been in professionalpractice for 10 years, you may be eligi-ble for Senior Membership.

New Senior Members receive anengraved wood and bronze plaque anda credit certificate for US$25 to be usedtowards a new IEEE society member-ship. Upon your request, the IEEEAdmission & Advancement Depart-

ment will send a letter to your employ-er recognizing this new status as well.The URL to request this letter ishttp://www.ieee.org/organizations/rab/md/empl_notification_form.html

As part of the IEEE’s Nominate-a-Senior-Member Initiative, the nomi-nating entity designated on themember’s application form willreceive US$10 from IEEE for eachapplication approved for SeniorMember grade when there are atleast five approved applications. Asan EDS member, we would appreci-ate it if you could indicate on yourSenior Member application form thatEDS is your nominating entity.

Please be aware that even if youdecide to list EDS as your nominatingentity, you still need to have an IEEEmember nominate you along withtwo other references. Your nomina-tor and your references all must beactive IEEE members holdingSenior Member, Fellow or HonoraryMember grade.

For more information concerningSenior Membership, please visithttp://www.ieee.org/web/membership/senior-members/requirements.html. Toapply for Senior Member grade, pleasecomplete an application form, which isavailable at http://www.ieee.org/organi-zations/rab/md/smelev.htm. You canalso request a hard copy Senior Mem-ber packet via mail or fax by contactingIEEE Admissions and AdvancementsDepartment, Attn: Denise Howard, 445Hoes Lane, Piscataway, NJ 08854,USA, Fax: +1 732 463 9359, Email:[email protected].

We strongly encourage you toapply for IEEE Senior Membership toenhance your career. At the sametime, you’ll be helping EDS.

Thank you for supporting IEEEand EDS.

Albert Z.H. WangEDS Vice-President of Membership

University of CaliforniaRiverside, CA, USA

Albert Z.H. Wang

EDS Senior Member Program

EDS Photovoltaic Devices Committee Report

EDS Senior Member Program

A high priority ofthe ElectronDevices Societyis to recognizeand enhance thequality of paperspublished in EDSarchival literature.The George E.Smith Award wasestablished in 2002

to recognize the best paper appearingin a fast turnaround archival publicationof EDS, targeted to IEEE Electron DeviceLetters. Among other criteria includingtechnical excellence, an important met-ric for selection for the award is com-prehensive and impartial referencing ofprior art. The paper winning the 2006George E. Smith Award was selectedfrom among 278 manuscripts that werepublished in 2006. The article is entitled"Half-Terahertz Operation of SiGeHBTs". This paper appeared in the July,2006 issue of Electron Device Lettersand was authored by John Cressler,Ramkumar Krithivasan, Yuan Lu, Jae-Sung Rieh, Marwan H. Khater, DavidAhlgren and Greg Freeman. The awardwill be presented in the plenary sessionof the International Electron DevicesMeeting to be held on December 10,2007 in Washington, DC. In addition tothe award certificate, the authors willreceive a check for $2,500. On behalf ofthe Electron Devices Society I wouldlike to congratulate the authors for thisachievement. Brief biographies of theauthors follow.

David C. Ahlgren received his Ph. D. inChemical Physicsfrom The Univer-sity of Michigan,Ann Arbor, MI, in1979. He joinedIBM in 1979. Hisearly devicestudies, processt e c h n o l o g ywork, and semi-

conductor production experiencehas lead him into his role in theAdvanced Semiconductor Techn-lology Center as a Senior Engi-neer in device and processdevelopment of high performanceSi/SiGe BiCMOS technology andits introduction into manufactur-ing. He has spent the past 8 yearsas Senior Engineering Manager ofSiGe Advanced BiCMOS Technol-ogy Development, and is currentlymanaging a CMOS and BiCMOScompact modeling team in IBM’sISDA joint development program.

John D. Cressler received his Ph.D.from ColumbiaUniversi ty in1990. He was onthe researchstaff at IBM(1984-1992), thefaculty of AuburnUniversity (1992-2002), and cur-rently is Ken Byers

Professor at Georgia Tech (2002-pre-

sent). His research centers on sili-con-based heterostructure devicesand circuits, and he has publishedover 350 papers and two books inthis area.

Greg Freeman received the Ph.D.degree from Stan-ford University in1991, and hasbeen with IBM’sEast Fishkill, NY,facility since 1991,where he hasbeen involved incharacterization,SiGe HBT design,

and SOI CMOS technology develop-ment. Currently he is manager of the45 nm SOI CMOS device designdepartment at IBM.

Marwan H. Khater received B.S.and M.S. degreesin applied solidstate physics. Hereceived his Ph.D.in Electrical Engi-neering from theUniversity ofTexas at Dallas,where his researchwork focused on

low temperature plasmas for micro-electronics processing. He has beenwith IBM since 2000, where heworked on development of Silicon-Germanium bipolar transistor tech-nology. Currently he is working at

Renuka P. Jindal

Robert AshtonJacques BeauvaisLuciano BoglioneJiankang Bu*Bruce Colpitts

Carl DebonoMichael FischerCesar D. FunesAndrew GoughKyung Han*

Anisul HaqueTeo Tee HuiMalin JacobsJiyoung KimJohn Rogers

Arjun Kar-RoyK. LikharevHerve MorelKhine NyuntKoneru Ramakrishna

Andrei Sazonov*

Shinichi Shikata

Keisuke Shinohara

Thomas B. Smith

Balasubramanian Vengatesan

Fu-Cheng Wang*Huikai XieChen-Cheng Yu

* = Individual designated EDS as nominating entity

If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest grade ofmembership for which an individual can apply. New senior members receive a wood and bronze plaque and a creditcertificate for up to US $25 for a new IEEE society membership. Upon request, a letter will be sent to employers, recog-nizing this new status.

For more information on senior member status, visit http:// www.ieee.org/web/membership/senior-members/status.html. To apply for senior member status, fill out an application at http://www.ieee.org/ organizations/rab/md/smelev.htm.

Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade!

2006 GEORGE E. SMITH AWARD2006 GEORGE E. SMITH AWARD


IBM T. J. Watson Research Center ondevelopment of FinFET devices fornext-generation CMOS technology.

Ramkumar Krithivasan receivedthe B.S. fromIndian Institute ofT e c h n o l o g y ,Madras in 2000,the M.S. fromAuburn Universi-ty in 2002, andPh.D. from Geor-gia Tech in 2007.He is currently

with Freescale Semiconductor, LakeZurich, IL. His expertise is in thearea of SiGe and RFCMOS high-speed analog/RF circuit design forbroadband communications sys-tems, radiation effects in SiGedevices and circuits, cryogenic elec-

tronics, and high-speed SiGe circuitdesign for extreme environments.

Yuan Lu received the B.S. degree inphysics from thePeking Universi-ty, Beijing, China,in 1998, the M.S.degree from theChinese Academyof Sciences, Bei-jing, China, in2001, and theM.S. and Ph.D

degrees in electrical and computerengineering from the Georgia Insti-tute of Technology, Atlanta, GA, in2004 and 2007, respectively. Since2007, he has been with MarvellSemiconductor, Santa Clara, CA, asa senior design engineer working onRFICs for WLAN products.

Jae-Sung Rieh received B.S. andM.S. degrees fromSeoul NationalUniversity, andPh.D. degree fromthe University ofMichigan. In 1999,he joined IBM,where he wasinvolved in thedevelopment of

high-speed SiGe HBT technologies.Since 2004, he has been with theSchool of Electrical Engineering,Korea University, as an assistantprofessor.

Renuka P. JindalEDS Vice-President of Publications

University of Louisiana at Lafayette

Lafayette, LA, USA

• Material and Process Charac-terization

• Replicated Feature Metrology• Manufacturing of Integrated Circuits• Reliability and Product Failure

Analysis• Nanotechnology, Displays, MEMS,

Sensors, and Emerging Devices• Device and Circuit Modelling• Technology R&D, Yield Enhance-

ment, Integration, and ProductionProcess Control

• Test Structure MeasurementUtilization Strategy

The conference will be held at theAppleton Tower in the University ofEdinburgh, which is located close tothe heart of Scotland’s capital city.With its stunning Georgian and Victo-rian architecture, and windingmedieval streets, it’s easy to see whyEdinburgh has been listed as a WorldHeritage Site. Edinburgh has one ofthe most beautiful cityscapes in theworld with the famous castle perchedatop the crags of an ancient volcanodominating the urban skyline. At theopposite end of “The Royal Mile” liesthe Palace of Holyrood, the Queen’s

official residence in Scotland. It con-tains historic apartments whereMary, Queen of Scots lived.

The capital is bustling with arts, cul-ture, sports and attractions and isfamous for playing host to the World’slargest arts festival. The city is thebirthplace of James Clerk Maxwell, SirArthur Conan Doyle, author of theSherlock Holmes novels and Alexan-der Graham Bell, inventor of the tele-phone. After dark, Edinburgh has alively nightlife with stylish bars andpubs, restaurants, clubs and live enter-tainment to rival any European City.

The National Gallery of Scotlandwith an extensive collection of oldmasters, adjoins Princes Street Gar-dens in the City centre which boaststhe World’s oldest floral clock. A fif-teen minutes walk away are the Scot-tish National Gallery of Modern Artand the Dean Gallery with their finemodern collections. The City centrealso hosts the National Museum ofScotland. The collections in the land-mark Museum of Scotland buildingtell the story of Scotland, its land, itspeople and culture. The Royal Muse-um building, with its magnificent

glass ceiling, houses internationalcollections covering nature to art, cul-ture to science. Edinburgh is withineasy reach of the Scottish country-side, offering lochs and mountains,the East Lothian and Fife coasts andthe home of golf, St Andrews.

Nonetheless we expect a highattendance at our plenary and postersessions, dealing with the hot topicsin the characterization of modernmicrotechnologies. Experts willexchange the latest progress in top-ics like variability, test chips for fastprocess yield ramp-up, and 3-D inte-gration. Our full program will beavailable shortly on the ICMTS webpage: www.see.ed.ac.uk/ICMTS/ .

We are looking forward to wel-coming you to Edinburgh

Anthony Walton2008 ICMTS General Chair

University of EdinburghEdinburgh, UK

Jurriaan Schmitz2008 ICMTS Technical Chair

University of TwenteThe Netherlands

(continued from page 1)

2008 IEEE International Conference on Microelectronic Test Structures (ICMTS)2008 IEEE International Conference on Microelectronic Test Structures (ICMTS)


The Electron Devices Society Ph.D. Stu-dent Fellowship Program wasdesigned to promote, recognize, andsupport Ph.D. level study and researchwithin the Electron Devices Society’sfield of interest. The field of interest forEDS is all aspects of engineering,physics, theory, experiment and simu-lation of electron and ion devicesinvolving insulators, metals, organicmaterials, plasmas, semiconductors,quantum-effect materials, vacuum, andemerging materials. Specific applica-tions of these devices include bioelec-tronics, biomedical, computation,communications, displays, electro andmicro mechanics, imaging, micro actu-ators, optical, photovoltaics, power,sensors and signal processing.

The Society is concerned withresearch, development, design andmanufacture related to materials,processing, technology, and applica-tions of such devices, and scientific,technical, educational and otheractivities that contribute to theadvancement of this field.

EDS proudly announces four 2007EDS Ph.D. Student Fellowship winners.Brief biographies of the 2007 recipientsappear below. Detailed articles abouteach Ph.D. Student Fellowship winnerand their work will appear in forthcom-ing issues of the EDS Newsletter.

Danijel Dankovic’ was born inLeskovac, Ser-bia, on 28 June1976. He is mar-r ied to Mari ja ,and they have ason Mi lan, 7years o ld , anddaughter Lana,2 months old.

He received the B.S. and M.S.degrees in Electrical Engineeringfrom the University of Nis̆, in 2001and 2006, respect ively . At themoment he is engaged asresearch and teaching assistantand is pursuing a Ph.D. degree inthe field of Nanotechnologies andMicrosystems at the Faculty ofElectronic Engineering, Universityof Nis̆. His research is focused onnegative bias temperature insta-bility (NBTI) in p-channel powerVDMOS transistors. He has beenawarded several times for his sci-entific results, and has authored 6refereed journal papers and 17conference papers. Danijel hasbeen a Student Member of IEEEEDS since 1998, and is now theChair of University of Nis̆ ED/SSCStudent Branch Chapter.

Tuo-Hung Hou was born in Chia-Yi, Taiwan, in1975. He receivedB.S. and M.S. inelectronic engi-neering fromNational ChiaoTung Univers i -ty , Ta iwan in1996 and 1998,respectively. He

is currently pursuing his Ph.D.degree under the guidance of Pro-fessor Edwin C. Kan in the Schoolof Electrical and Computer Engi-neering, Cornell University, Itha-ca, NY. From 1998 to 2000, heserved as a Second Lieutenant inthe Army, Taiwan, R.O.C. In April2000, he joined Taiwan Semicon-ductor Manufacturing Company(TSMC). From 2001 to 2003, hewas a lso a TSMC assignee atInternational SEMATECH, Austin,TX. During his tenure with TSMC,he has contributed to several keyfront-end processes such as spikeannealing, high-K / metal gatestack through atomic layer chemi-cal deposi t ion, and re l iabi l i tyimprovement of ultra-thin gateoxide. His current research cen-ters on the nonvolatile-charge-

based floating-gate structures inintegrat ion with nanocrystals ,fullerenes, and carbon nanotubes.Tuo-Hung Hou has authored orco-authored more than 20 techni-ca l papers and held 7 U.S.patents.

Chen Yang received his B. Engdegree in Elec-t ronic Scienceand Technologyfrom TsinghuaUniversity, Bei-j ing, China in2003. He is cur-rently pursuing aPh.D. degree inmicroelectronics

at Tsinghua University, under theguidance of Prof. Li-Tian Liu, Prof.Tian-Ling Ren and his co-advisorProf. Albert Wang from the Uni-versity of California, Riverside. Hisresearch work is on high-perfor-mance on-chip RFIC devices, withfocus on novel magnetic passiveinductors and transformers. In2006, he establ ished the EDSTsinghua Univers i ty StudentBranch Chapter and served as theChair up to the present . Heworked as the secretary for the2007 International Workshop onElectron Devices and Semiconduc-tor Technology ( IEDST) . Hereceived the Best Student PaperAward from International Semi-conductor Technology Conference(ISTC) in 2007, and the First PlaceAward of 1st Agilent Cup Semi-conductor Manufacturing Technol-ogy Contest, held by the Ministryof Education of China and AgilentTechnologies in 2005.

Kah-Wee Ang received the B.Eng(first class hon-ors) degree fromthe NanyangT e c h n o l o g i c a lUnivers i ty andthe S. M. degreefrom the Nation-al University ofS i n g a p o r e ,

Paul K.L. Yu Agis Iliadis

2007 EDS Ph.D. Student Fellowship Winners

2007 EDS Ph.D. Student Fellowship Winners


under a Singapore-MIT Allianceprogram. He is currently workingtowards the Ph.D. degree in elec-trical engineering at the NationalUnivers i ty of Singapore. Hisresearch interests are related tosemiconductor devices and elec-tronic materials, with a particularfocus on f ront -end issues inCMOS device technology. His doc-toral thesis work encompassesdesign, process development and

experimental device fabrication ofnovel strained transistors formedon both bulk and silicon-on-insu-lator substrates, carrier transportcharacterization and hot carrierreliability studies of strained tran-sistors, calculations of electronicband structures in strained-sili-con, as well as lattice strain analy-s is . He has a l ready publ ishedmore than 25 papers at premierjournals and conferences.

Paul K.L. YuEDS Vice-President of Educational Activities

University of California at San DiegoLa Jolla, CA, USA

Agis IliadisEDS PhD & Masters Student

Fellowship ChairUniversity of MarylandCollege Park, MD, USA

A high priori tyof the ElectronDevices Societyis to recognizeand enhance thequality of paperspublished in EDSarchival literature.Every year, theSociety confersits prest igious

Paul Rappaport Award to the bestpaper published in the IEEE Trans-act ions on Electron Devices .Among other criteria includingtechnical excellence, an importantmetric for selection for the awardis comprehensive and impartialreferencing of prior art. The win-ning paper was selected fromamong 350 manuscripts that werepublished in 2006. The article isenti t led, "Cascaded QuantumWires and Integrated Design forComplex Logic Functions: Nano-electronic Full Adder". This paperwas published in the May, 2006issue of the IEEE Transactions onElectron Devices , and wasauthored by Billy Lau, David Hart-mann, Lukas Worschech, andAlfred Forchel. The award will bepresented in the plenary session ofthe International Electron DevicesMeeting to be held on December10, 2007, in Washington, DC. Inaddition to the award certificate,

the authors will receive a check for$2,500. On behalf of the ElectronDevices Society I would like to con-gratulate the authors for thisachievement. Brief biographies ofthe authors are given below.

Alfred Forchel was born inStuttgart, Ger-many, in 1952. Hereceived his Ph.D.degree and hisDr. habil. degreein physics fromthe University ofStuttgart, in 1982and 1988, respec-tively. In 1990, he

became a Full Professor in physicsat the University of Würzburg, wherehe is also responsible for themicrostructure laboratory.

David Hartmann was born in Büdin-gen, Germany, in1976. He receivedhis Diploma degreein Physics fromthe University ofWürzburg, Ger-many. He is cur-rently workingtoward Ph.D.degree in the

Nanoelectronics Group of the Tech-nical Physics Department at thesame university.

Billy Lau was born in Hong Kong, in1984. After beinga member of theNanoelectronicsGroup with theDepartment ofTechnical Physicsat the Universityof Würzburg, he isnow pursuing adegree in Engi-

neering Science concentrating inmicrofluidic technology. He is cur-rently a doctorate student at HarvardUniversity.

Lukas Worschech was born inWürzburg, Ger-many, in 1967.Af ter h is Ph.D.degree he joinedthe departmentof Technica lPhys ics a t theUnivers i ty ofWürzburg. In2002, he habili-

tated with studies on semicon-ductor nanostructures and iscurrent ly responsib le for theNanoelect ronics group at thesame department.

Renuka P. JindalEDS Vice-President of PublicationsUniversity of Louisiana at Lafayette

Lafayette, LA, USA

Renuka P. Jindal

2006 EDS PAUL RAPPAPORT AWARD2006 EDS PAUL RAPPAPORT AWARD


The Electron Devices Society Mas-ters Student Fellowship Programwas designed to promote, recog-nize, and support Masters levelstudy and research within theElectron Devices Society’s field ofinterest. The field of interest forEDS is all aspects of engineering,physics, theory, experiment andsimulation of electron and iondevices involving insulators, met-als, organic materials, plasmas,semiconductors, quantum-effectmaterials, vacuum, and emergingmaterials. Specific applications ofthese devices include bioelectron-ics , b iomedical , computat ion,communications, displays, electroand micro mechanics, imaging,micro actuators, optical, photo-voltaics, power, sensors and sig-nal processing.

The Society is concerned withresearch, development, designand manufacture related to mate-rials, processing, technology, andapplications of such devices, andscientific, technical, educationaland other activities that contributeto the advancement of this field.

EDS proudly announces f ive2007 EDS Masters Student Fellow-ship winners. Brief biographies ofthe 2007 recipients appear below.Detailed articles about each Mas-ters Student Fellowship winnerand their work wi l l appear inforthcoming issues of the EDSNewsletter.

Li Wei received the B.Eng (1st class,hons.) degreefrom the School ofElectrical and Elec-tronic Engineeringat Nanyang Tech-nological Universi-ty (NTU) in 2005under Govern-ment-link-company(GLC) scholarship

of Singapore Government. Aftergraduation, he was awarded SSMC-NTU scholarship for the master lev-el study at NTU and started thecollaboration research project withthe reliability department of Sys-tems on Silicon Manufacturing Co.Pte. Ltd (SSMC). His research inter-ests include interconnect reliability,Electromigration simulation andFinite element analysis. Since April2007, He has been converted to aPh.D candidate and continues hisresearch at NTU.

Xu Zhao was born in Dalian, China in1982. He receivedthe B.S. degree inElectrical Engineer-ing from TsinghuaUniversity, Beijing,China in 2005.From July 2004 toJune 2005, he wasan UROP studentmodeling carbon

nanotube field effect transistorsand RF MEMS switches. From Sep-tember 2005 to September 2006, heworked on Bismuth and BiSbnanowires for thermoelectric appli-cations. In October 2006, he joinedthe wide gap semiconductor mate-rials and devices group as aresearch assistant at MIT, super-vised by professor Tomas Palacios.He is currently interested in newdevice structures to improve thehigh frequency performance of

GaN HEMTs. He was the recipientof the Tsinghua University firstprize national fel lowship andauthored or co-authored 7 paperson international journals and con-ferences.

Anuj Madan received the B.E. withHonors in electron-ics and electricalcommunicat ionengineering fromPunjab Engineer-ing College, Indiain 2006. He is cur-rently a graduatestudent in the SiGeDevices and Cir-

cuits Group at Georgia Institute ofTechnology (Georgia Tech), Atlanta,GA. Anuj’s research interests are inthe physics of silicon-based het-erostructure transistors, includingboth strained silicon CMOS and SiGeMODFETs. In the summer of 2007, heworked on NAND flash developmentat Sandisk Corporation, Milpitas, CA.His undergraduate research wasfocused on strain engineering inadvanced CMOS and process varia-tions in multi-gate devices. He haspublished seven papers in IEEE jour-nals and conferences.

Ovidiu Profirescu was born inBucharest, Roma-nia. He graduatedU n i v e r s i t yPolitehnica ofBucharest, Roma-nia, Faculty ofE l e c t r o n i c s ,T e l e c o m m u n i -cat ions andI n f o r m a t i o n

Technology, Microelect ronicsDepartment in 2006. In 2006 hestarted a 1.5 years Masters Studyin Univers i ty Pol i tehnica ofBucharest called Advanced Micro-

2007 EDS Masters Student Fellowship Winners

Paul K.L. Yu Agis Iliadis

2007 EDS Masters Student Fellowship Winners


electronics in collaboration withInfineon Technologies AG. Since2001 he has worked at EDILMicroelectronics and Nanoelec-tronics R&D Centre of Excellenceon International Projects. SinceJuly 2005 he worked at CatalystSemiconductor Romania as adesign engineer doing layout ,testing, measurements with manytypes of industry standard labequipment, and electrical design.Since October 2006 he is full-timeassistant professor al UniversityPolitehnica of Bucharest, teachingElectronic Devices and Circuitslaboratories to second and thirdyear students.

Andrew Warren graduated with aB.S. in Physicsfrom the Universi-ty of Central Flori-da (UCF) in 2004and then accepteda position at theHitachi GlobalStorage Technolo-gies’ MaterialsCharacterization

Lab in San Jose, Ca. The work involvedstructural characterization of magneticstorage media by various x-ray tech-niques. Andrew returned to UCF in2006, and is presently pursuing M.S.and PhD. degrees in Materials Science.Current research interests include Pt-

Ru binary alloy thin films for work func-tion tuning; the classical (resistivity)size effect in Cu; amorphous magneticalloys; and materials characterization,specifically electron microscopy, X-rayand synchrotron X-ray scattering.

Paul K.L. YuEDS Vice-President of Educational Activities

University of California at San DiegoLa Jolla, CA, USA

Agis IliadisEDS PhD & Masters

Student Fellowship ChairUniversity of MarylandCollege Park, MD, USA

EDS Distinguished Lecturer, Dr.Jayasimha Prasad, v is i ted theDepartment of Electrical Commu-nication Engineering at the IndianInstitute of Science, Bangalore,India, on August 20, 2007, to deliv-er a lecture on SiGe HBT Technol-ogy. This talk was arranged by theIEEE ED/SSC Bangalore Chapterand was hosted by Prof. NavakantBhat of IISc.

Prasad described that thoughGaAs HBTs came into existence first,SiGe HBT technology is now verymature and is competing with III-Vtechnology in performance, integra-tion and cost. SiGe HBT technology isnow available in many foundries. Byincorporating Ge in the base, the cur-rent gain, Early voltage, Ft and Fmaxof the transistor is enhanced. Thegreat leverage of a silicon-based HBT

process is that it is relatively easy tocombine it with CMOS to developBiCMOS processes which can takeadvantage of the high speed capabili-ties of the bipolar and the high inte-gration levels of CMOS. ProductionSiGe processes today have a Ft/Fmaxof 300/350GHz with 3.3ps gate delay.On the other hand, InP/InGaAs HBTshave a Ft/Fmax of 400/450GHz with agate delay of 1.9ps. The SiGe processtoday has an impressive Ft BVCEOproduct of 500GHzV. Later, Prasadcompared the performance of staticand dynamic dividers, oscillators anddigital communication circuits inboth GaAs and SiGe HBT technology.The talk was well received by bothstudents and faculty.

Prof. Navakant Bhat gave anoverview of the new Nanoelectron-ics/VLSI Lab (funded by the Govern-ment of India) to Prasad. Thefacility will be fully functional intwo years. Prasad was given a tourof the Microelectronics Lab wherestudents are pursuing research inCMOS and MEMS.

Navakant BhatIndian Institute of Science

Bangalore, India

EDS Distinguished Lecturer Visits Indian Institute of Science, Bangalore

Dr. Jayasimha Prasad giving a talk on SiGe HBT

EDS Distinguished Lecturer Visits Indian Institute of Science, Bangalore


Description: One year fellowships awarded to promote, recognize, and support Ph.D. level study and researchwithin the Electron Devices Society’s field of interest: The field of interest for EDS is all aspects of engineering,physics, theory, experiment and simulation of electron and ion devices involving insulators, metals, organic materi-als, plasmas, semiconductors, quantum-effect materials, vacuum, and emerging materials. Specific applications ofthese devices include bioelectronics, biomedical, computation, communications, displays, electro and micromechanics, imaging, micro actuators, optical, photovoltaics, power, sensors and signal processing.Five fellowships will be awarded, with the intention of at least one fellowship being given to eligible students in eachof the following geographical regions every year: Americas, Europe/Middle East/Africa, and Asia & Pacific. Only onecandidate can win per educational institution.

Prize: US$7,000 to the student and a travel subsidy of up to US$3,000 to each recipient to attend the IEDM for pre-sentation of award plaque. The EDS Newsletter will feature articles about the EDS Ph.D. Fellows and their work overthe course of the next year.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be pursuing a doctoratedegree within the EDS field of interest on a full-time basis; and continue his/her studies at the current institution withthe same faculty advisor for twelve months after receipt of award. Sponsor must be an IEEE EDS member. Previousaward winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform independent research in the fields ofelectron devices and a proven history of academic excellence.

Nomination Package:• Nominating letter by an EDS member• Two-page (maximum) statement by the student describing his or her education and research interests and

accomplishments• One-page biographical sketch of the student (including student's mailing address and email address) • One copy of the student’s under-graduate and graduate transcripts/grades. Please provide an explanation of the

grading system if different from the A-F format.• Two letters of recommendation from individuals familiar with the student’s research and educational credentials.

Letters of recommendation can not be from the nominator.

Timetable:• Nomination packages are due at the EDS Executive Office no later than May 15, 2008• Recipients will be notified by July 15, 2008• Monetary awards will be given by August 15, 2008• Formal presentation of the awards will take place at the IEDM Awards Ceremony in December 2008.• Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office.

Send completed package to:IEEE Operations CenterEDS Executive OfficeEDS Ph.D. Student Fellowship Program445 Hoes Lane, Piscataway, NJ 08854 USA

For more information contact:[email protected] visit: [email protected] or visit:http://www.ieee.org/society/eds/education/fellowship.xml

2008 IEEE Electron Devices Society Ph.D. Student Fellowship

Call for Nominations

2008 IEEE Electron Devices Society Ph.D. Student Fellowship

Call for Nominations


At the December 2005 EDS Administrative Committee Meeting, EDS approved a Masters level studentFellowship Program.

Description: One-year fellowships awarded to promote, recognize, and support graduate Masters level study andresearch within the Electron Devices Society’s field of interest: all aspects of engineering, physics, theory, experimentand simulation of electron and ion devices involving insulators, metals, organic materials, plasmas, semiconductors,quantum-effect materials, vacuum, and emerging materials. Specific applications of these devices include bioelec-tronics, biomedical, computation, communications, displays, electro and micro mechanics, imaging, micro actuators,optical, photovoltaics, power, sensors and signal processing. Five fellowships will be awarded, with the intention ofat least one fellowship being given to eligible students in each of the following geographical regions every year:Americas, Europe/Mid-East/Africa, Asia & Pacific. Only one candidate can win per educational institution.

Prize: US$2,000 and a certificate to the student, to be presented by the Dean or Department head of the student’senrolled graduate program.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be accepted into a graduateprogram or within the first year of study in a graduate program in an EDS field of interest on a full-time basis; andcontinue his/her studies at a graduate education institution. Nominator must be an IEEE EDS member and prefer-ably be serving as the candidate’s mentor or faculty advisor. Previous award winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform research in the fields of electron devicesand proven history of academic excellence in engineering and/or physics as well as involved in undergraduateresearch and/or supervised project.

Nomination Package:• Nominating letter by an EDS member who served as candidate’s mentor or faculty advisor.• Two-page (maximum) statement by the student describing his or her education and research interests and

accomplishments• One-page biographical sketch of the student (including student's mailing address and e-mail address)• One copy of the student’s transcripts/grades• A letter of recommendation from an individual familiar with the student’s research and educational credentials.

Letters of recommendation cannot be from the nominator.

Timetable:• \Nomination packages are due at the EDS Executive Office no later than March 15, 2008• Recipients will be notified by May 15, 2008• Monetary awards will be presented by the Dean or Department Chair of the recipient's graduate program at the

beginning of the next academic term.• Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office.

Send completed package to:IEEE Operations CenterEDS Executive OfficeEDS Masters Student Fellowship Program445 Hoes Lane, Piscataway, NJ 08854 USA

For more information contact:[email protected] visit: [email protected] or visit:http://www.ieee.org/society/eds/education/fellowship.xml

2008 IEEE EDS MASTERS STUDENT FELLOWSHIP Final Call for Nominations

2008 IEEE EDS MASTERS STUDENT FELLOWSHIP Final Call for Nominations

Description: Awarded to promote, recognize, and support meritorious research achievement on the part of Region 9(Latin America and the Caribbean) students, and their advisors, through the public recognition of their published work,within the Electron Devices Society’s field of interest: All aspects of the physics, engineering, theory and phenomena ofelectron and ion devices such as elemental and compound semiconductor devices, organic and other emerging materi-als based devices, quantum effect devices, optical devices, displays and imaging devices, photovoltaics, solid-state sen-sors and actuators, solid-state power devices, high frequency devices, micromechanics, tubes and other vacuumdevices. The society is concerned with research, development, design, and manufacture related to the materials, pro-cessing, technology, and applications of such devices, and the scientific, technical and other activities that contribute tothe advancement of this field.

Prize: A distinction will be conferred in the form of an Award certificate bestowed upon the most outstanding StudentPaper nominated for the two-year period. The prize will be presented at either the International Caribbean Conferenceon Devices, Circuits and Systems (ICCDCS) or the Symposium on Microelectronics Technology and Devices (SBMicro).In addition to the recognition certificate, the recipient will receive a subsidy of up to $1,500 to attend either of the confer-ences above, where the award is to be presented. There will be a formal announcement of the winner in a future issueof the EDS Newsletter.

Eligibility: Nominee must be an IEEE EDS student member at the time of nomination, be enrolled at a higher educa-tion institution located in Region 9. In the case of a co-authored paper, only eligible co-authors may be nominated.Papers should be written in English on an electron devices related topic. Papers should have been published, in full-fea-ture form, during 2006-2007 in an internationally recognized IEEE sponsored journal or conference in the field of elec-tron devices related topics. Statements by the student and by the faculty advisor should accompany the nomination.Nominator must be an IEEE EDS member. Previous winners of this award are ineligible.

Basis for Judging: Demonstration of Nominee’s significant ability to perform outstanding research and report itsresults in the field of electron devices. Papers will be judged on: technical content merit, originality, structure, clarity ofcomposition, writing skills, overall presentation. These criteria will be weighted by the assessment of the nominee’spersonal contribution and the linkage of the nominated work to the nominee’s career plans.

Nomination Package:• Nominating letter by an EDS member (it may be the faculty advisor)• A brief one-page (maximum) biographical sketch of the student• 1000 words (maximum) statement by the nominated student describing the significance and repercussion of the

nominated work within the wider scope of the nominee’s career plans• 400 words (maximum) statement by the faculty advisor under whose guidance the nominated work was carried out.

It should unmistakably state the faculty advisor’s support of the nomination, and clearly explain the extent of thenominated student’s contribution, as well as its relevance for the overall success of the reported work.

• A copy of the published paper

Timetable:• \Nomination packages are due at the EDS Executive Office no later than 15 February 2008.• Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office• \Winners will be notified by 15 March 2008.ß Recipients may choose to have the formal presentation of the award at either one of the conferences: ICCDCS 2008,28-30 April 2008, Cancun, Mexico, or SBMicro, 1-4 September 2008, Gramado, Brazil.

Send completed package to:IEEE Operations CenterEDS Executive OfficeEDS R9 Outstanding Student Paper Award445 Hoes Lane, Piscataway, NJ 08854 USA

For more information contact:Laura Riello, EDS Executive [email protected] or 732-562-3927

2006-2007 IEEE Electron Devices Society

Region 9 Biennial Outstanding Student

Paper AwardCall for Nominations

2006-2007 IEEE Electron Devices Society

Region 9 Biennial Outstanding Student

Paper AwardCall for Nominations


The IEEE Transactions on Semiconduc-tor Manufacturing Best Paper Award ispresented to the authors of that paperconsidered by the Transactions’ Editor-ial Staff and reviewers to be the out-standing paper published during theyear. The Award is based on the accu-racy, originality, and importance of thetechnical concepts, as well as the quali-ty and readability of the manuscript.The Best Paper is also based on theimmediate or potential impact that thiswork will have on the overall semicon-ductor manufacturing industry.

The Editorial Staff is pleased toannounce that the paper entitled“Model-Based Design Analysis andYield Optimization,” by Tobias Pfing-sten, Daniel J. L. Herrmann, and CarlEdward Rasmussen has been recog-nized as the best paper published inthe 2006 Transactions. This paper,which appeared in the Novemberissue, has been chosen for its contribu-tion of an alternative sampling andmodeling approach for statistical analy-sis and yield improvement of deviceand structure designs. As process anddevice variation continues to grow inimportance, methods are needed inintegrated circuits and emerging tech-nologies such as MEMS to betterunderstand and address this variation.In this year’s best paper, an efficientBayesian approach with a Gaussianprocess prior is used to improve upona more conventional Monte Carlo sam-pling scheme. The approach is demon-strated for a MEMS accelerometerdesign, and reduces the number ofsimulation runs required for statisticalanalysis and optimization.

Tobias Pfingsten received the Diplo-ma in physics fromthe University ofMünster, Münster,Germany in 2003.He is currentlyworking towardsthe Ph.D. degree incooperation withthe Max PlanckInstitute for Biolog-

ical Cybernetics, Tübingen, Germany.He is now with Robert Bosch GmbH,Stuttgart, Germany, in CorporateResearch and Advance Engineering,Microsystem Technologies. Hisresearch interests include machinelearning and Bayesian inference, partic-ularly their application to problems inmanufacturing and engineering.

Daniel J. L. Herrmann received theDiploma in physicsfrom the Universi-ty of Tübingen,Tübingen, Ger-many, and thePh.D. in physicsfrom the Universi-ty of Nijmegen,The Netherlands,in 2000. In 2000, he

was a Postdoctoral Researcher at theTechnical University of Berlin, Berlin,Germany, and a Research Fellow at theMax Planck Institute for BiologicalCybernetics, Tübingen, from 2000 to2002. He has worked in the field of qua-sicrystals and on the application of ker-nel methods and Gaussian processmodels to industrial problems. Current-ly, he is a Scientist at the Department

of Microsystem Technologies, Corpo-rate Sector Research, Robert BoschGmbH, Germany, where he developsmethods and tools for the designprocess of Microsystems and semicon-ductor production.

Carl Edward Rasmussen receivedthe M.S. degree inengineering fromthe Technical Uni-versity of Den-mark and thePh.D. degree incomputer sciencefrom the Universityof Toronto, Toron-to, Ontario, Cana-

da, in 1996. In 1997, he was aPostdoctoral Researcher at the Tech-nical University of Denmark, and aSenior Research Fellow at the Gats-by Computational NeuroscienceUnit, University College, London,U.K., from 2000 to 2002. Currently,he is a Junior Research GroupLeader in the Department of Empiri-cal Inference for Machine Learningand Perception, Max Planck Institutefor Biological Cybernetics, Tübin-gen, Germany, where he doesresearch on Bayesian inference andmachine learning. He has workedextensively on Gaussian processmodels and recently coauthored thebook, Gaussian Processes forMachine Learning (MIT Press, 2006).

Duane BoningT-SM Editor-in-Chief

MITCambridge, MA, USA

Transactions on Semiconductor Manufacturing2006 Best Paper Award Presented

Nominations are being accepted for the IEEE Fellows class of 2009. The rank of IEEE Fellow is the institute’shighest member grade, bestowed on senior members who have contributed “to the advancement or applicationof engineering, science, and technology.”

The deadline for nominations is 1 March 2008. Senior members can be nominated in one of four categories:research engineer/scientist, educator, technical leader, or the recently added category of applicationengineer/practitioner.

To nominate an IEEE senior member or to learn more about the Fellow program, visit http://www.ieee.org/fellows.

Call for Fellow Nominations

Transactions on Semiconductor Manufacturing2006 Best Paper Award Presented

Call for Fellow Nominations


The IEEE EDS/SSCS Mini-Colloquium(MQ) – NADE – Nanoelectronic Devices,Present and Perspective was successfullyheld at the Sinaia Hotel, Sinaia, Romania,on 14 October 2007. It was part of animportant IEEE event: the IEEE Region 8Committee Meeting held at the NovotelHotel in Bucharest on 12-13 October andCAS, the 30th IEEE International Semicon-ductor Conference held in Sinaia on 15-17October.

Eleven Distinguished speakers pre-sented talks about the past, presentand future of Devices and ICs. A panelsession on Nanoelectronic Devices in2015 ended the Mini-Colloquium.

The past was presented by theEmeritus Professor Arjun Saxena ofRensselaer University, USA, whoworked in the Noyce group atFairchild for the invention of IC. Histalk was on Fundamentals of theInvention and Impact on Future Devel-opments of Integrated Circuits andNano-optoelectronic Devices.

The present and future was pre-sented by:• Professor Anthony Walton of the

University of Edinburgh, UK: Postprocessing CMOS wafers withmicro and nanotechnologies.

• Professor Monuko du Plessis of theUniversity of Pretoria, South Africa:Integrated Nano-explosive DevicesUsing Nano-porous Silicon.

• Professor Chih-Tang Sah, Universi-ty of Florida, US who “apprenticedwith Shockley “ at Bell Labs, pre-sented for the first time his BipolarTheory of MOS Field-Effect Transis-tors and Experiments, coauthor

Professor Bin B. Jie of Peking Uni-versity, China. Chih-Tang Sah talkwas teleconferenced from Florida

• Dr. Andreas Wild of TechnologySolutions Organization EMEA,Freescale, France: “More Moore”versus “More than Moore”: Statusand Perspective

• Dr. Meyya Meyyappan of NASAAmes Research Center for Nan-otechnology, US: The Role ofNanotechnology in ShapingNanoelectronics: An Overview.

• Dr. Daniel Foty of Gilgamesh Asso-ciates, US: Electron Devices inNanoelectronic Circuits and Sys-tems: Problems and Prospects.

• Professor Rajendra Singh of Clem-son University, US, ED Romaniacharter Partener: Challenges andOpportunities in the Fields of Infor-mation Processing & Clean; EnergyConversation in the Nano World ofthe 21st Century.

• Thomas Watteyene, PhD student atINSA, France Telecom R&D: WiFly:Demonstrating Energy-Efficient Self-Organization Protocols for WirelessSensor Networks.

• Dr. Jacob Baal-Schem, IEEE Region8 History Coordinator, Israel: E-Liv-ing: Life in the Nanotechnology Era.

At the end Jean-Gabriel Remi, theIEEE Region 8 Director, France gave atalk on IEEE Technical Activities inRegion 8.

The panel was chaired by ProfessorMarcel D. Profirescu of the UniversityPolitehnica of Bucharest, Romania, theorganizer of the NADE Mini-Colloqui-um and three speakers addressed the

attendees, the NADE lecturers:• Dr Rick Chandler of BT Global

Services, UK: Nano-electronicinterfaces to a Ubiquitous com-puting world; From Smart Dust toIntelligent Walls.

• Professor Adrian Ionescu of EPFLLausanne, Switzerland.

• Dr. Ralf Neurohr of Tech.-Wiss.Buro, Germany: The Future ofNanoelectronics: A road towardsNano-Bio-Electronics?

There were about 100 attendees fromuniversities, industry, software compa-nies and chip design houses whoactively participated with questionsand comments, one third of thembeing students.

The MQ was sponsored by the IEEEED and SSC Societies and EDIL Microand Nanoelectronics R&D Center ofExcellence and co-sponsored by EDILHi-Tech S.R.L and the Institute ofMicrotechnology who organized theCAS conference and also helped logis-tically NADE.

The 500 page volume of abstracts,speakers’ bios and slides were handedto both the speakers and the attendeesalong with a CD-Rom. These are avail-able on request to those who could notattend NADE.

In conclusion, NADE was a greatsuccess and it is envisioned to be thefirst in a series of NanoelectronicDevices and ICs to be held all over theworld in the future.

Marcel D. ProfirescuED/SSC Romania Chapter Chair

University Politehnica of Bucharest,Romania

NADE – Nanoelectronic Devices Presentand Perspective

IEEE EDS/SSCS Mini-Colloquium 14 October 2007, Sinaia, Romania

NADE – Nanoelectronic Devices Presentand Perspective

IEEE EDS/SSCS Mini-Colloquium 14 October 2007, Sinaia, Romania


The 13th Workshop and IEEE EDSMini-colloquium on NAnometerCMOS Technology (WIMNACT) wasa special event jointly organizedby the ED/SSC Hong Kong andRel/CPMP/ED Singapore Chapters,successfully held on July 23 and 25,2007 in Kong Hong and Singapore,respectively. The two mini-colloquiaare co-sponsored by the EDS Distin-guished Lecturer (DL) Program andthe two Chapters. This was the 2ndWIMNACT held in Hong Kong andthe 5th in Singapore. The Hong Kongworkshop was opened by the Chap-ter Vice Chair, Dr. K. P. Pun, andattended by more than 40 partici-pants. The Singapore workshop, withmore than 70 participants, started

with a welcome address by the Chap-ter Chair, Dr. Alastair Trigg, followedby an Introduction to EEE Microelec-tronics Center, co-organizer of theworkshop, by the Director, Prof. Kin-Leong Pey.

Prof. Juin Liou from Univ. of Cen-tral Florida and Prof. Ramgopal Raofrom IIT-Bombay traveled to bothcities and gave DL talks on “On-ChipSpiral Inductors in CMOS Technolo-gy for RF Applications” and “DeviceDesign and Optimization Challengesfor Nano-scale Multi-gate MOSFETs”,respectively. Prof. Mansun Chan ofHKUST talked on “Application ofIntegrated Circuit Technology for Bio-logical Material Analysis” at bothworkshops. DLs from Singapore also

presented their talks in both cities,with travel supported by the Singa-pore Chapter. They are Prof. Kin-Leong Pey and Prof. Xing Zhou fromNanyang Technological Univ. andMr. Chih-Hang Tung from Institute ofMicroelectronics, with the respectivetopics on “Silicided Hyper-shallowp+/n- Junctions Formed by PulsedLaser Annealing for NanoelectronicDevices”, “Unified Compact Model-ing of Emerging Multiple-Gate MOS-FETs”, and “Advanced TransmissionElectron Microscopy for Nano-elec-tronics Device and Process Analysis”.Prof. Steve Chung of National ChiaoTung Univ. from Taiwan attended theHong Kong workshop and gave thetalk on “Channel Mobility EnhancingSchemes and Reliability Issues forStrained CMOS Technologies”. Prof.Philip Wong of Stanford Univ., whowas visiting Hong Kong, also gave aDL talk on “Carbon Nanotube Tran-sistor Compact Model” at the HongKong workshop. Prof. Vijay Arora ofWilkes Univ., who is visiting Universi-ti Teknologi Malaysia, attended theworkshop in Singapore and gave thetalk on “Physics-Based Models forPerformance Evaluation of aNanoscale MOSFET”.

This joint mini-colloquia, althougha first attempt, was very successfulas well as economical due to sharedtravel funds. As the well-establishedWIMNACT series especially forRegion 10, the SRC-AP would like toinitiate and co-sponsor similar eventsfor the region in the future. Completeinformation on the 13th WIMNACT,including the past history of WIMN-ACTs, can be found at the website:

http://www.ntu.edu.sg/eee/eee6/conf/WIMNACT07.htm

Xing Zhou, Organizer and SRC-AP Chair

Alastair Trigg, Rel/CPMT/ED Singapore Chapter Chair

Aaron Ho, ED/SSC Hong KongChapter Chair

EDS Distinguished Lecturers Participate in the 13th WIMNACT

Jointly Held in Hong Kong and Singapore

DL speakers (*) and session chairs at WIMNACT-Hong Kong. From left to right: Peter Lai, Hei Wong,Mansun Chan*, Xing Zhou*, Ramgopal Rao*, Juin Liou*, Kin-Leong Pey*, Chih-Hang Tung*,

P. K. Pun, and K. N. Leung

DL speakers at WIMNACT-Singapore. From left to right: Xing Zhou, Kin-Leong Pey, Vijay Arora, JuinLiou, Mansun Chan, Ramgopal Rao, Chih-Hang Tung

EDS Distinguished Lecturers Participate in the 13th WIMNACT

Jointly Held in Hong Kong and Singapore


Regional and Chapter NewsRegional and Chapter News

ED Argentina (being formed)- by Sergio D. BaronArgentina’s EDS chapter in formationsuccessfully started its activities witha conference by one of the Society’sdistinguished lecturers. On August14th, Dr. Enrique Miranda, who is anEDS Distinguished Lecturer and aProfessor with the Escola TécnicaSuperior d’Enginyeria, UniversitatAutònoma de Barcelona, Spain, UAB,gave a talk entitled, “Gate OxideBreakdown in MOS Structures: Physi-cal Model and Applications”. Theevent took place at IEEE Argentina’sheadquarters in Buenos Aires.

The large audience actively fol-lowed the words of Dr. Miranda, whopresented a comprehensive and up-to-date description of the physicalmodels of breakdown current and thepost-breakdown conduction in MOSstructures. An emphasis was put onProfessor Miranda’s own completeanalytical model that describes thesephenomena. To finish, a broadpanorama of applications of theseproperties was presented.

The question and answer sessiondemonstrated both a knowledge-eager audience and the specializedacademic formation of the assistants.

This event was very helpful for theformation of Argentina’s EDS chapterand even a petition signature wascollected at that time!

ED South Brazil- by João Antônio Martino and Marcelo Antonio PavanelloThe chapter activities during August-September were focused in support-ing the organization of the 22ndSymposium on MicroelectronicsTechnology and Devices – SBMicro2007, held in Rio de Janeiro, Brazil,on September 3-6, 2007. This sym-posium was organized by two Brazil-ian scientific societies: SBMicro(Brazilian Microelectronics Society)and SBC (Brazilian Computer Soci-ety) and was technically co-spon-sored by the IEEE Electron DevicesSociety. During this event, the EDSRegion 9 Chapters Meeting was heldand several tutorial presentationsand invited seminars were given byfour EDS Distinguished Lecturers:Sorin Cristoloveanu (IMEP-Minatec,France), “Multiple Gates for SOIMOSFETs: Two, Three or Four?” and“SOI Technology: Device Physics andCharacterization”; Cor Claeys, (IMEC,Belgium), “Physical Characterizationand Reliability Aspects of MuGFETs”and “Impact of Strain Engineering onDevice Performance”; Jamal Deen,(McMaster University, Canada),“Noise in Advanced Electronic

Devices and Circuits” and “HighlySensitive, Low-cost IntegratedBiosensors”; and Juin J. Liou, (Uni-versity of Central Florida, USA),“Advanced ESD Protection Solutionsin CMOS/BiCMOS Technologies”.These seminars were attended byover 50 people, many of them mem-bers of the chapter, while others trav-eled from various regions of Brazil,Latin America, the USA and Europe.Besides giving the seminars, some ofthese Distinguished Lecturers alsoattended the EDS Region 9 ChaptersMeeting and had many discussionswith the participants during the fourdays of the symposium.

Also in September the chapterpromoted two Distinguished Lectur-er presentations at the University ofSao Paulo, both on September12th: “Organic SemiconductorDevices”, by Magali Estrada delCueto and “Models for Doped Sym-metric Double-Gate Transistors”, byAntonio Cerdeira Altuzarra, bothlecturers from CINVESTAV, Mexico.These presentations were attendedby several undergraduate and grad-uate students in the field of Elec-tron Devices as well as some EDSmembers.

USA, CANADA &LATIN AMERICA

(Regions 1-6, 7 & 9)

USA, CANADA &LATIN AMERICA

(Regions 1-6, 7 & 9)

Dr. Miranda and attendees of the August 14th,EDS DL SBMicro Conference Welcome Reception


ED Puebla- by Claudia Reyes-BetanzoThe technical chapters of the IEEEPuebla Section, the Electron DevicesSociety and the Circuits and SystemsSociety, successfully organized the“First Seminar on Nanoelectronicsand Advanced Design 2007” atINAOE in Tonantizintla, Puebla. Thisseminar consisted of six lectures heldSeptember 12-14, 2007. The EDPuebla Chapter contributed two talksabout nanotechnology. On Septem-ber 12, EDS Distinguished Lecturer,Prof. Rajendra Singh from ClemsonUniversity, presented the talk “Nan-otechnology and Pathways to GreenEnergy Conversion”, and on Septem-ber 13, Dr. Francisco J. GarcíaSánchez, EDS Distinguished Lecturerfrom Simón Bolivar University inCaracas, Venezuela, gave a talk titled“From Microelectronics to Nanoelec-tronics: A View of Electron DevicesEvolution”. The seminar was attend-ed by 110 participants from Pueblaand nearby Veracruz, Mexico Cityand Toluca. An enthusiastic groupfrom the IEEE Student Branch fromthe University of Veracruz was verypleased with the high level of theselectures.

~ Jacobus W. Swart, Editor

ED Novosibirsk StateTechnical University (NSTU) Student Branch - by Artem S. YakovlevThe 8th International Workshop andTutorials EDM’2007 was organized andsuccessfully held July 1-5, 2007, in theNSTU Conference Center ‘Erlagol’ inthe Altay Mountains. The number ofaccepted papers was 103, from a total

number of 186 authors. All acceptedpapers were published in the volumeof Proceedings which was issued inNovosibirsk and distributed throughthe participants of EDM’2007 and viathe IEEE Conference Publications Pro-gram. Two tutorials were included inthe program of EDM’2007 and werealso published in the volume of Pro-ceedings. The tutorial topics were‘New Life of Old Effect: Impact ofPiezoresistivity on Physics and Tech-nology’ and ‘Experimental Semicon-ductor Nanoelectronics in the Instituteof Semiconductor Physics SB RAS’.

EDS Distinguished Lecturer Prof. Rajendra Singh

EDS Distinguished Lecturer Dr. Francisco J. García Sánchez

EUROPE, MIDDLEEAST & AFRICA

(REGION 8)

EUROPE, MIDDLEEAST & AFRICA

(REGION 8)

Dr. Francisco J. García Sánchez with the IEEE Student Branch from Veracruz

Invited speakers and organizers of the seminar (from left to right), Dr. Arturo Sarmiento, CAS PueblaChairman, Prof. Krishnendu Chakrabarty, EDS DL Prof. Rajendra Singh, Dr. Mauricio Terrones, EDS DL Dr.Francisco J. García Sánchez, Dr. Claudia Reyes Betanzo, EDS Puebla Chariman, and Dr. Roberto Murphy


The ED NSTU Student Branch hasprovided the technical support forpreparing the volume of Proceedingsin a hardcover book of more than380 pages with illustrations. For2008, we are planning to issue thevolume of Proceedings containingcolored illustrations.

As well, the great work during theEDM’2007 was performed for orga-nizing the sessions, accommodationof participants and the program ofrelaxation. This year a delegationfrom the Republic of South Korea, ledby Professor Jong Hwa Lee fromUlsan University of Technology par-ticipated in EDM’2007. A total of 6persons, including 3 professors and 3Ph.D. students, presented their workat EDM’2007. We are especiallythankful to EDM’2007 Chair, Profes-sor Victor Gridchin, for establishingthis kind of scientific co-operationand to Professor Jong Hwa Lee forhis agreement to be a leader of theKorean delegation. We hope to con-tinue this type of co-operation and toinvite delegations from China andJapan as well, to the next EDM.

The web site of EDM’2007 wasrenewed and placed on the EDM con-stant site http://www.nstu.ru/edm.The design of the online applicationform was significantly improved. For2008, we are planning to develop andstart the system of online uploadingof full-text papers submitted to theEDM Program Committee. For thisaim the ‘Specimen for Preparing thePapers’ was already developed andwill be placed on the EDM web siteindicated above.

The main topics of EDM’2007 were:Materials and Technologies for Micro-

and Nanoelectronics, Modeling andMeasuring of Microelectronic Devices,Medical and Industrial Electronics,Standards, Investigations and Applica-tions of Radio and Telecommunica-tions and, at least, Ultrasonic Devices:Physics, Technology, Applications. Weare glad to indicate that all presenta-tions in the session devoted to nan-otechnologies were only made inEnglish. For 2008, we are planning torepeat this positive experience with asession devoted to advances in radioand telecommunications.

EDM is traditionally a meeting ofyoung specialists from various Uni-versities and Research Institutes. Weare especially thankful to our col-leagues from the Moscow Institute ofElectronic Engineering and St. Peters-burg University of Electrical Engi-neering LETI, who have submittedtheir reports but not visited EDMbecause of technical reasons. Thisyear EDM’2007 has received specialfinancial support from the RussianFoundation for Basic Research(RFBR). This successful experience aswell as other advances reported here,testify that now EDM is a powerfulscientific event in Russia and has aninternational resonance. Supportfrom IEEE makes this event evenmore significant.

The 9th International Workshopand Tutorials on Electron Devicesand Materials EDM’2008 will be orga-nized July 1-5, 2008, in NovosibirskState Technical University. All inter-ested persons are welcome to con-tact us. For participation, eachapplicant should complete the onlineapplication form and submit anabstract. The deadline for completingapplication forms and sendingabstracts is March 10, 2008. If youhave any questions, please contactthe EDM’2008 Vice-chair, AssociateProf. Alexander Gridchin, via [email protected].

- Alexander V. Gridchin, Editor

MOW 2007- Tibor BerceliThe Mobile-Optical-Wireless (MOW)conference week was held in Budapest,Hungary from 14-18 May, 2007. It wasorganized in cooperation with the IEEEAP/COM/ED/MTT Hungary Chapter, theEuropean Microwave Association, the

URSI Hungarian National Committee,as well as the Budapest University ofTechnology and Economics, theHungarian Academy of Sciencesand the Scient i f ic Society forTelecommunications and Infor-matics.

The MOW conference week wascomposed of 5 different meetings:the 12th Colloquium on MicrowaveCommunications (Microcoll), the 7thMediterranean Microwave Sympo-sium (MMS), the 18th InternationalElectromagnetic Fields and Materials(EMFM) conferences, as well as anoptical communications Workshopand Summer School.

The main part of the conferenceweek was the joint organization oftwo conferences: the Microcoll andthe Mediterranean Microwave Sym-posium. In the program of the 3-dayparallel held conferences, therewere 130 papers including 19 invit-ed talks with attendees from 32countries.

The participants could listen toan interesting and high level pro-gram which was even enhanced bythe invited speakers. Among themwere 10 IEEE Distinguished Lectur-ers; 2 each from the Antennas andPropagation Society, the Communi-cations Society, the ElectronDevices Society and 4 from theMicrowave Theory and TechniquesSociety. Some of the distinguishedlecturers came to the conferencefrom the USA, only for a single day,to present their talk.

The papers have been published ina joint Proceeding’s Book of the twoconferences. The details of the pro-gram can be seen on the web site:www.diamond-congress.hu/ mow2007

The best contributed papers willbe published in an extended form inthe Proceedings of the EuropeanMicrowave Association.

The European Microwave Associa-tion gave 3 Awards to the best youngscientist’s papers. The First Prize wasshared by Anne-Laure Billabert fromFrance and Yifei Li from the USA.Third Prize was given to OlenaBoryskina from the Ukraine.

The conference site was locatedat the new Europa Conference Cen-ter, in the hilly area of Budapest. Thesocial program consisted of a Wel-

Working moment of EDM: discussion of thework of session with EDM’2007 Chair,

Professor Victor Gridchin


come Party and a Banquet. The ban-quet was held outside of the city andincluded a horse show, a dinner withlive gypsy music, a folk dance and abon fire. The participants enjoyedboth the technical and the socialprograms.

AP/COM/ED/MTT Hungary- Tibor BerceliWe present the main topics of ouractivity for the period of January 1,2006 to August 31, 2007. TheAP/COM/ED/MTT Hungary Chapterorganized several meetings invit-ing well-known experts to presentnew results on up-to-date subjects.We also participated in the organi-zat ion of a Workshop and aFocused Session at two confer-ences sponsored by IEEE. Finallywe organized the MOW conferenceweek in May, 2007.

1.) We had a technical meeting on“Microwave measurement prob-lems” conducted by TamasBanky, our student member. Fif-teen people participated in it andcontributed to the framework ofround-table discussions. It washeld February 15, 2006.

2.) We had an invited ElectronDevices Society distinguishedlecturer’s visit on May 31, 2006.Professor Vijay K. Arora fromUSA presented a lecture entitled“Quantum Nano-Engineering”.The lecture was attended by 13people.

3.) We participated in the organiza-tion of the Workshop on “Newoptical approaches for microwave,high-speed signal transmission”in the framework of the IEEEMTT-S International MicrowaveSymposium. Tibor Berceli IEEEFellow gave a lecture entitled,“Combined Optical-WirelessIndoor Communications Sys-tem”. The Workshop was held inSan Francisco, California, June16, 2006 and was attended byabout 24 people.

4.) We had an invited Comunica-tions Society distinguished lec-turer’s visit on June 21, 2006.

Professor Abbas Jamalipourfrom Sydney, Australia present-ed a lecture entitled “FutureMobile Communications towardBroadband Wireless IP”. The lec-ture was attended by 28 people.

5.) We participated in the organi-zation of the Focused Sessionon “Microwave Generation byOptical Techniques” in theframework of the EuropeanMicrowave Conference. TiborBerceli, IEEE Fellow, gave a lec-ture entitled, “Microwave Gen-eration by Optical Techniques –A Review”. The Focused Ses-sion was held in Manchester,England September 14, 2006,and was attended by about 60people.

6.) We had an invited ElectronDevices Society distinguishedlecturer’s visit on August 31,2006. Professor Juin J. Liou,from Florida, USA, presenteda lecture ent i t led “RecentAdvances in MOS Devices forRF Applications”. The lecturewas attended by 16 people.

7.) We had an invited lecturer’s visitfrom the Sydney University, Aus-tralia on September 25, 2006.Professor Robert Minasian pre-sented a lecture entitled “Pho-tonic Signal Processing ofMicrowave Signals“. The lecturewas attended by 13 people.

8.) We had a meeting for the 12thMicrocoll Conference OrganizingCommittee on October 25, 2006.The meeting was conducted byTibor Berceli, Chairman of theTechnical Program Committee.The meeting was attended by 25people.

9.) We had an invited distinguishedlecturer’s visit from theMicrowave Theory and Tech-niques Society on October 26,2006. Professor Georg Boeckfrom Berlin, Germany present-ed a lecture entitled “Design ofRF CMOS Integrated Circuits”.The lecture was attended by 17people.

10.) We had a social meeting on theoccasion of Christmas onDecember 21, 2006. It wasattended by 32 people.

11.) The total number of the Chaptermembers has grown from 184up to 191 which means 4%increase.

12.) In 2006 we began the organiza-tion of two conferences to beheld in 2007: the 7th Mediter-ranean Microwave Symposiumand the 12th Microcoll . Wecomposed the Call for papersand distributed 600 copies tomany conferences like MIKON,IMS, EuMW, MMS that werebeing held in 2006. The begin-ning of 2007 kept us very busywith the organization of theseconferences in the frameworkof the MOW (Mobile-Optical-Wireless) conference week,which was held in Budapest inMay, 2007. The detailed reporton this event is included in thissection of the Newsletter. ~ Andrzej Napieralski, Editor

ED Spain- by Josep PalaresThe V Postgraduate Student Meetingon Electronic Engineering (formerlycalled NEPHOS Workshop), orga-nized by the Universitat Rovira i Vir-gili (URV, Tarragona, Spain) was heldon July 5-6 in Tarragona.

The Postgraduate Student Meet-ing on Electronic Engineering hasbeen held since 2003. It consists oftwo days of (a total of six) plenarytalks given by invited prestigiousresearchers (from different coun-tries) and poster presentations byPh.D. students. The plenary talks,especially devoted to Ph.D. stu-dents, address different topics innano-electronics and photonics.There are two Best Poster Awards:one for the category of Ph.D. Stu-dents in their first two years, andanother one for Ph.D. students intheir last years.

This year, two invited talks weregiven by EDS Distinguished Lectur-ers. Firstly, Prof. Mikael Östling(KTH, Kista, Sweden), Chair of theIEEE EDS Region 8 Subcommitteefor Regions/Chapters, presented an


overview of critical integrationissues for future generation MOS-FETs towards 10 nm gate length.His talk was entitled “Critical tech-nology issues for deca-nanometerMOS”. In addition, Prof. MagaliEstrada (CINVESTAV, Mexico)dealt with the state of the art andthe recent advances in OrganicSemiconductor Devices. The otherinvited talks were given by interna-tional researchers: Dr. T. Perova(University of Dublin, Trinity Col-lege, I reland) explained theirresults in design, fabrication andcharacterisation of ordinary andtunable photonic structures basedon silicon for optical interconnects;Dr. M. Decarli (ITC-irst, Trento,Italy) presented a technologicalapproach to BioMEMS (overviewand prospects) ; Prof . C. Lucat(CNRS, Bordeaux, France) dealtwith screenprinting technology forMems applications; and finally, Dr.C. Zwingmann (University of Bre-men, Germany) explained thepotential and design of new highresolut ion mult inuclear NMRapproaches in metabonomics forclinical research and diagnosis.

~ Cora Salm, Editor

ED Japan- by Atsushi KurobeOn July 12, 2007, the ED Japan Chap-ter organized a technical meetingentitled “Possibility of controllingvariations in semiconductor devicebehaviors: How do we model thevariations?” which was held atHiroshima University, Hiroshima,Japan. Recently, the “variation con-trol” is one of the hottest R&D issuesof semiconductor devices, and themeeting offered the attendees theopportunity to obtain the latest infor-mation. Six speakers gave presenta-tions on their topics from theviewpoint of either the device devel-opment or the circuit design.

Firstly, Prof. Mitiko Mattausch-Miura of Hiroshima Univ. gave a DLlecture to summarize the current sta-tus of the circuit variation analysisand its future applications. The title of

her talk was “Status of device model-ing technology: Toward analyzingand predicting the variations amongintegrated circuits.”

From the device developmentpoint of view, three talks were given.Dr. Ken-ichiro Sonoda of RenesasTechnology gave a presentation on“Statistical analysis and modeling ofRandom Telegraph Signal (RTS) insmall-geometry MOSFETs.” Dr. Tet-sufumi Tanamoto of Toshiba dis-cussed the quantum effect in futureMOSFETs in a talk entitled “Fluctua-tion of ballistic conduction currentcaused by electron traps in the Kon-do regime.” An interesting talk on “Amethodology to optimize devicestructures using TCAD” was given byDr. Koichi Fukuda of Oki ElectricIndustry.

In the latter half of the meeting,Prof. Hans Juergen Mattausch ofHiroshima University discussed thelatest results of variation analysisfrom the circuit designer’s viewpointin a presentation entitled “Circuit-variation analysis based ondevice/process variations.” Dr. Yoshi-hisa Iino of Silvaco Japan gave a talkon “An EDA platform linking ‘varia-tion’ and ‘computer simulation.”

All the speakers engaged in livelyand fruitful discussions with the audi-

ence. This meeting, which wasattended by more than 100 people,was very beneficial for chapter mem-bers and was a great success.

~ Kasui Tsutsui, Editor

ED Xian- by Yimen ZhangDr. Yuhua Cheng visited the ED XianChapter September 20-23, 2007, anddelivered a Distinguished Lecturer talkat Xidian University, Xian, China. TheDL talk, entitled, “An Overview ofMOSFET Device Behavior and Model-ing for Mixed-signal/RF IC Design”,was attended by more than 70 localprofessionals and students. In thisexcellent lecture, various aspects suchas CMOS technology trends, devicebehavior of RF CMOS, challenges of

ASIA & PACIFIC(REGION 10)

ASIA & PACIFIC(REGION 10)

More than 100 people attended the ED Japan Chapter technical meeting held at Hiroshima Univ. on July 12, 2007. Six speakers including Prof. Miura, an EDS DL, gave presentations

on the latest developments in device modeling

Dr. Yuhua Cheng (left 3) visited the XianChapter and is pictured with Prof. Yuming

Zhang (Left 2) and Prof. Yimen Zhang (Left 4,Chapter Chair)

device modeling, device figures ofmerits, and model validations, werediscussed. As a chapter partner, Dr.Cheng also met the local EDS mem-bers and professors of Xidian Univer-sity to discuss the Chapter’s activities,research area and issues regardingfuture collaboration. Prof. YiqiZhuang, Dean of the School of Micro-electronics, and Prof. Yuming Zhang,Deputy Dean of the School and Chap-ter Chair of ED Xian Chapter, attendedthe meeting.

~ Hei Wong, Editor

ED/SSC Bangalore- by P.R. SureshThe chapter organized the 14th Inter-national Symposium on the Physicaland Failure Analysis of Integrated Cir-cuits (IPFA) in July 2007, at Bangalore(http://www.ieee.org/ipfa). The confer-ence was held July 11-13 and duringthe conference, 31 regular papers, 12invited papers and 23 poster paperswere presented. About 150 peopleattended the IPFA and the tutorialsthat were organized in conjunctionwith the conference.

Dr. Bipul Paul of Toshiba, USA,gave a talk on “Transiting from Si tonon-Si: Prospects and Challenges”on 27 July. In this talk, the techno-logical prospects and challenges ofnanowire and carbon nanotubeFETs were discussed. It was shownthat while parasitic capacitances willbe the major limiting factor inachieving the overwhelming intrin-sic performance of these devices,the insensitivity to many processparameters variation will surelymake these devices very attractiveover conventional MOSFET towardsthe scaling limit.

ED Bangladesh- by Anisul HaqueThe ED Bangladesh Chapter arrangeda technical talk under the EDS Distin-guished Lecturer Program. Prof.Muhammad Ashraful Alam of PurdueUniversity, gave a DL talk at BUET onJuly 31. The title of his talk was Fron-tiers of Computational Nanoelectron-ics: A Bottom-up Perspective. Thetalk was attended by nearly 100 IEEEmembers and guests. Prof. A. M. M.Safiullah, Vice Chancellor, BUET, alsoattended.

ED/MTT India- by Kandala ChariThe Chapter had the following eventssince last reporting:

• A three-day workshop on Analogand RF Design held at Birla Instituteof Technology and Science, Pilanifrom March 16-18, 2007, was jointlyco-sponsored by the Chapter andGenesis Microchip (India) Pvt. Ltd.The Workshop drew 20 participantsfrom Infineon Technologies, WiproTechnologies, TES PV ElectronicSolutions, Analog Devices, SiliconCapital, C-DAC Hyderabad and STMicroelectronics. The speakerswere Prof. L.K. Maheshwari, Vicechancellor, BITS; Dr. Chan-drashekhar, Director CEERI Pilani;Prof. Shanthi Pavan from IIT,Madras, Dr. Kaushik Saha and Mr.Nitin Bansal from ST Microelectron-ics; Dr. Shubhash Mukherjee fromTexas Instruments and Mr. PraksahEaswaran from Cosmic circuits. Dr.(Mrs.) Anu Gupta and Dr. RajnishSharma - faculty from BITS alsodelivered some key lectures duringthe workshop. Emphasis was laidon imparting hands-on experienceto the participants on a variety ofdesign tools like Mentor Graphicsand Cadence. Participants wereawarded a certificate of participa-tion. Dr. (Mrs.) Anu Gupta and Dr.Rajnish Sharma of EEE group ofBITS, Pilani, coordinated the event.

• Chapter Chair delivered on May 3,2007, an invited lecture on “Semi-conductor IP law- RegistrationIssues” at the Staff DevelopmentProgramme on Challenges and

Opportunities in Technical Educa-tion, held from April 23 – May 7 atRKN Engineering College, Nagpur,under AICTE sponsorship. About60 faculty members from variousengineering colleges attended themeeting. The Chapter Chair alsoaddressed the M Tech VLSI stu-dents of VNIT Nagpur, whereinvarious design and test, validationand inspection, design evaluationaspects of semiconductor ICs weretouched. He also addressed theOrientation Programme ofWomen Scientists organized bythe DST Delhi.

• The chapter also played a facilitat-ing role in the International Con-ference Smart Cards Expo 2007,featuring both Conference andExhibition of products in the area.Co-located with the conferencewere the related e-security Expo,RF ID Expo2007, and India MobileForum. Over 200 international andnational delegates attended thetechnical deliberations and exhibi-tions, which drew a huge atten-dance of many thousands. Mr. S.Swaran, Electronics Today, coordi-nated the event held at PragatiMaidan, New Delhi.

• The Chapter Chair reviewed theSTAR efforts at KGMGH Schoolat Eluru (AP) twice with partici-pating students, teachers andSchool Head. New students wereenrolled, feedback from studentsascertained and future programactions identified. The programreceived praise on utility fromstakeholders.


A section of audience at the Workshop on Analog and RF Design held at BITS Pilani, March 16-18, 2007

The ED/MTT India Chapter is lookingfor active volunteers who could con-tribute to various efforts taken upacross the country and also serve invarious positions of the Chapter. Indi-viduals interested may contact theChapter Chair, Kandala Chari.

IPFA 2007- by M. K. RadhakrishnanThe 14th International Symposium onthe Physical and Failure Analysis ofIntegrated Circuits 2007, IPFA 2007,was held at the J N Tata Auditorium,Indian Institute of Science, Bangalore,India, July 11-13, 2007. The confer-ence was organized by the IEEEED/SSC Bangalore Chapter along withIEEE Rel/CPMT/ED Singapore andIEEE ED/AP Bombay Chapters. IPFA istechnically co-sponsored by EDS andthe Reliability Society.

The three day conference includeda one day Tutorial and two Symposiawith Plenary Sessions comprising of

invited papers and parallel sessionswith contributed oral and postalpapers. The two Keynote speakerswere Guido Groeseneken from IMEC,Belgium and Sunit Tyagi from Intel,India. There were 9 invited speakers:M. A. Alam, Purdue, USA; Rino Choi,Sematech, USA; Tung Chih Hang,IME, Singapore; S. S. Iyer, IBM, USA;Chandra Mouli, Micron, USA; PrasadChaprala, NS, USA; Ingrid De Wolf,IMEC, Belgium; M. Natarajan, Silterra,Malaysia and K. Ahmed, AppliedMaterials, USA. Also, the Best Papersfrom ISTFA06 and ESREF06 were pre-sented in the Best paper exchangeprogram.

The tutorials on the first day wereheld in two parallel sessions and hadlarge attendance from academia andindustry. Tutorials were: MEMS Relia-bility and Failure Analysis by Ingrid DeWolf, CMOS; Scaling into NanometerRegime by S.S. Iyer of IBM; DigitalDevice and Circuit Reliability by M. A.

Alam of Purdue University; Effect ofReliability Mechanisms in AnalogMixed Signal Applications by PrasadChaparala of NS; ESD Protection inDevices by M. Natarajan of Silterra;Advanced Failure Analysis and Fail-ure Mechanisms tutorial by M. K.Radhakrishnan and Tung Chih Hang.

A total of about 180 people attend-ed the Symposium with an average ofabout 40 for each tutorial. Apart fromthe Symposium and Tutorial, the con-ference also had an equipment exhibi-tion in which 16 vendors participated.

As part of IPFA’s move aroundAsia, from its Singapore origin, theconference in Bangalore, India, was agreat success and has shown how itcan blend into the design community.

AP/ED/MTT Penang- by Richard KeatingThe AP/ED/MTT Penang Chapter wasfortunate to have two excellent pre-sentations over the last quarter. OnJuly 10th, Prof. Boon S. Ooi, from theElectrical and Computer EngineeringDepartment, Lehigh University, Beth-lehem, Pennsylvania, USA, presented


Faculty attending the Staff Development Program addressed by the ED/MTT India Chapter Chair onMay 3, 2007, at RKNE College, Nagpur

From Left to Right: Harish (OC), Deepak (OC), Tung Chih Hang (IPFA Board), Ben Kazer (TPSC),M.K. Radhakrishnan (IPFA Board), Guido Groeseneken (TPSC & Keynote), PVS Subrahmaniam (GenChair), P R Suresh (OC), Gan Chee Lip (TPSC & OC), Navakant Bhat (OC), Anil K. (TPSC), M. A. Alam(TPSC), Souvik Mahapatra (Tech Chair), Sankara Reddy (OC), .S .S Iyer (TPSC), M. Natarajan (TPSC),

Padmini (Secretariat), Dwarakanath (Secretariat)

Professor Boon S. Ooi presenting his researchon Quantum-dot Lasers

Professor Ken-ya Hahimoto in Penang

a talk on“Photonic integrated circuitsand ultra-broadband semiconductorquantum-dot lasers”. Professor Ooi isan excellent presenter and his paperwas very well received.

On July 19th, Prof. Ken-yaHashimoto, an EDS DL from theGraduate School of Engineering,Dept. Electrical and Electronic Engi-neering, Chiba University, Japan,presented a talk on “AcousticalWave Devices”. Professor Ken-yagave an excellent overview of thetechnical and the economic statusof SAW devices, particularly for thecell phone industry.

We would like to thank PSDCand Motorola for their support ofour Chapter.

ED SJCE Student Branch- by P. M. PavanThe Chapter conducted the follow-ing events this quarter:

A talk was conducted by the stu-dent chapter which was hosted by Dr.Partha Ray (Director, National Semi-conductors). The topic was “Funda-mental of Quantum Electron Devices”in which a detailed explanation wasgiven on the working of semiconduc-tor devices based on the concept of“Quantum Mechanics”. The talk start-ed with a brief introduction of thesemiconductor industry, followed byexplanations on the wave nature ofelectrons and based on the similarconcept, explanations on the “diodeas a quantum Mechanical device”.

A Workshop was conducted forthe students on 8051 µcontroller, inwhich they were taught about thesubject regarding the practical aspectof it. At the end of the course the stu-dents are expected to come out witha project regarding the same.

A visit to the “Fabrication Lab”in the ECE Department of the IndianInstitute of Science, Bangalore ,wasmade by the students in which theywere guided by Dr. Navakanta Bhat(Prof. ECE Dept IISc), who explainedthe detailed working procedure ofthe Fabrication process.

REL/CPMT/ED Singapore- by Alastair TriggIn July, the Rel/CPMT/ED SingaporeChapter and ED/SSC Hong KongChapter jointly organized the 13th

Workshop and IEEE EDS Mini-collo-quium on NAnometer CMOS Tech-nology (WIMNACT) in Hong Kongon 23 July and Singapore on the25th. The workshops were co-spon-sored by the EDS DistinguishedLecturer (DL) Program. DLs fromSingapore, Hong Kong, USA, andIndia presented talks at the Singa-pore workshop. This first attempt atorganizing joint mini-colloquiaproved very successful, attracting70 people in Singapore and was anefficient use of travel funds.

Following the workshop, Prof.Juin Liou gave a one-day shortcourse on “Electrostatic Discharge(ESD) Protection in BiCMOS/CMOSTechnology on 26 July. Earlier on27 June, Prof. Mansun Chan cameto Singapore and gave a DL talk on“IC Industry in China: Challengesand Opportunities”.

This year, the Chapter’s flag-ship conference on failure analy-sis, the International Symposiumon the Physical and Failure Analy-sis of Integrated Circuits 2007,was held on July 11-13 in Banga-

lore, India. It was organized by theIEEE ED/SSC Bangalore Chapterand co-sponsored by the IEEERel/CPMT/ED Singapore Chapter.Ful l deta i ls can be found at :http://ewh.ieee.org/reg/10/ipfa/html/2007/index.htm.

IPFA 2008 will be held in Singa-pore from July 7-11, 2008. Thecal l for papers is ava i lab le a thttp://www.ewh.ieee.org/soc/cpmt/singapore/.

The Chapter’s packaging confer-ence, the 9th Electronics PackagingTechnology Conference (EPTC2007) will be held in Singaporefrom 10-12 December. Full detailsof EPTC can be found at the web-site: http://eptc2007.confs.org/.

Mr. Li Wei, a student from theSchool of Electrical and ElectronicEngineering, Nanyang Technologi-cal University (NTU) in Singapore,won an inaugural prestigious 2007IEEE Electron Devices Society Mas-ters Student Fellowship. Only fiveawards, each worth US$2000, aregiven worldwide each year.

~ Xing Zhou, Editor


Dr. Partha Ray giving a talk on Fundamentalsof Quantum Electron Devices, at the ED SJCE

Student Branch Chapter

DL speakers at the 13th WIMNACT-Singapore. From left to right: Xing Zhou, Kin-Leong Pey,Vijay Arora, Juin Liou, Mansun Chan, Ramgopal Rao, Chih-Hang Tung

From left: A/Prof Yeo Kiat Seng, A/Prof TanCher Ming (supervisor), Li Wei, and A/P Pey

Kin Leong (nominator)


January 4 - 8, 2008, T International Confer-ence on VLSI Design, Location: HICC, Hyder-abad, India, Contact: VLSI Secretariat, E-Mail:[email protected], Deadline: 7/23/07,www: www.vlsiconference.com/vlsi2008

January 22 - 24, 2008, T IEEE Radio and Wire-less Symposium, Location: Long Beach Conven-tion Center, Orlando, FL, USA, Contact: TomWeller, E-Mail: [email protected], Deadline:7/13/07, www: http://rawcon.org/index.html

January 22 - 24, 2008, T IEEE Wireless andMicrowave Technology Conference,Location: Long Beach Convention Center, Orlando,FL, USA, Contact: Aly Fathy, E-Mail:[email protected], Deadline: 7/20/07, www:http://rawcon.org/index.html

February 3 - 7, 2008, T IEEE International Solid-State Circuits Conference, Location: San Francis-co Marriott, San Francisco, CA, USA, Contact:Diane Melton, E-Mail: [email protected],Deadline: 9/17/07, www: www.isscc.org/isscc

February 25 - 29, 2008, T International Con-ference on Nanoscience and Nanotechnol-ogy, Location: Melbourne Convention Centre,Melbourne, Australia, Contact: Paul Mulvaney, E-Mail: [email protected], Deadline:9/21/07, www: http://www.ausnano.net/

March 12 - 14, 2008, T Workshop onUltimate Integration of Silicon Devices,Location: Palazzo Antonini, Udine, Italy, Con-tact: Luca Selmi, E-Mail: [email protected],Deadline: 1/18/08, www: http://www.ulis-conference.org/2008/index.html

March 15 - 17, 2008, T International Semicon-ductor Technology Conference, Location: Holi-day Inn Pudong Shanghai China, Shanghai, China,Contact: Beibei Li, E-Mail: [email protected],Deadline: 10/15/07, www: www.ecsistc.org

March 17 - 19, 2008, T IEEE InternationalSymposium on Quality Electronic Design,Location: Double Tree Hotel, San Jose, CA, USA,Contact: Ali Iranmanesh, E-Mail: [email protected],Deadline: 9/30/07, www: http://www.isqed.org/

March 24 - 28, 2008, T International Scien-tific & Practical Conference of Students,Post Graduates & Young Scientists “Mod-ern Technique & Technology”, Location:Tomsk Polytechnic University, Tomsk, Russia, Con-tact: Lyudmila Zolnikova, E-Mail: [email protected],Deadline: 2/15/08, www: www.tpu.ru/files/event/ctt-eng.doc

March 24 - 27, 2008, T IEEE InternationalNanoelectronics Conference, Location: River-front Business Hotel, Shanghai, China, Contact:Cher Tan, E-Mail: [email protected], Deadline:9/18/07, www: www.ieeenec.org

April 16 - 17, 2008, T IEEE International Con-ference on RFID, Location: The Venetian, LasVegas, NV, USA, Contact: Dilip Kotak, E-Mail:[email protected], Deadline: 11/21/07, www:www.ieee-rfid.org/2008

April 21 - 24, 2008, T International Confer-ence on Microwave and Millimeter WaveTechnology, Location: Nanjing, China, Contact:Wei Hong, E-Mail: [email protected], Deadline:Not Available, www: Not Available

April 21 - 23, 2008, T International Sympo-sium on VLSI Technology, Systems andApplications, Location: Ambassador HotelHsinchu, Hsinchu, Taiwan, Contact: Clara Wu, E-Mail: [email protected], Deadline: 10/15/07,www: http://vlsitsa.itri.org.tw/2008/general

April 22 - 24, 2008, @ IEEE International Vac-uum Electronics Conference, Location: PortolaPlaza Hotel, Monterey, CA, USA, Contact: RalphNadell, E-Mail: [email protected], Deadline:Not Available, www: http://www.ivec2008.org/

April 23 - 25, 2008, T International Sympo-sium on VLSI Design, Automation and Test,Location: The Ambassador Hotel-Hsinchu, Hsinchu,Taiwan, Contact: Elodie Ho, E-Mail:[email protected], Deadline: 10/15/07, www:http://vlsidat.itri.org.tw/2008/General/

April 27, 2008, * IEEE International ReliabilityPhysics Symposium, Location: Hyatt RegencyPhoenix at Civic Center, Phoenix, AZ, USA,

Contact: John Suehle, E-Mail: [email protected],Deadline: 10/1/07, www: http://www.irps.org

May 11 - 16, 2008, * IEEE PhotovoltaicSpecialists Conference, Location: Man-chester Grand Hyatt, San Diego, CA, USA,Contact : Americo Fores t ier i , E -Mai l :[email protected], Deadline: 12/10/07,www: www.33pvsc.org

May 11 - 14, 2008, * InternationalConference on Microelectronics, Loca-tion: University of Nis, Nis, Serbia & Mon-tenegro, Contac t : Iv ica Manic, E -Mai l :[email protected], Deadline: 10/20/07,www: http://miel.elfak.ni.ac.yu

May 12 - 15, 2008, T International Electrosta-tic Discharge Workshop, Location: Port d’Albret, Plage, France, Contact: Lisa Pimpinella, E-Mail: [email protected], Deadline: 11/26/07, www:http://www.esda.org

May 15 - 16, 2008, T International Workshopon Junction Technology, Location: Hotel Equa-torial, Shanghai, China, Contact: Yu-Long Jiang, E-Mail: [email protected], Deadline: 1/15/08,www: www.iwjt2008.com

May 18 - 23, 2008, T International Sympo-sium on Dielectrics for Nanosystems: Mate-rials Science, Processing Reliability &Manufacturing, Location: Phoenix, AZ, USA,Contact: Amir Zaman, E-Mail: [email protected], Deadline: Not Available, www:http://www.electrochem.org/index.htm

May 18 - 21, 2008, * IEEE Non-Volatile Semi-conductor Memory Workshop, Location:Club Med Opio, France, Contact: Richard Eguchi,E-Mail: [email protected], Deadline:1/23/08, www: http://www.ewh.ieee.org/soc/eds/nvsmw/

May 18 - 21, 2008, T International Conferenceon Memory Technology and Design, Location:VVF “La Badine”, Giens, France, Contact: RichardEguchi, E-Mail: [email protected], Dead-line: 1/23/08, www: www.ewh.ieee.org/soc/eds/nvsmw

The complete EDS Calendar can be found at our web site:http://www.ieee.org/society/eds/meetings/meetings_calendar.xml Please visit!

EDS MEETINGS CALENDAR(As of November 7, 2007)

EDS MEETINGS CALENDAR(As of November 7, 2007)


May 18 - 22, 2008, @ IEEE InternationalSymposium on Power SemiconductorDevices & Integrated Circuits, Location:Wyndham Orlando Resort, Orlando, FL, USA,Contact: Don Disney, E-Mail: [email protected], Deadline: 11/11/07, www:www.ecse.rpi.edu/conf/ispsd08

May 21 - 23, 2008, T International Confer-ence on Microwaves, Radar and Wire-less Communication, Location: Poznan,Poland, Contact: Edward Sedek, E-Mail:[email protected], Deadline: 1/5/08, www:www.irs.edu.pl/irs2008.html

May 24 - 27, 2008, @ International Confer-ence on Microelectronic Test Structures,Location: University of Edinburgh, Edinburgh, UnitedKingdom, Contact: Les Haworth, E-Mail:[email protected], Deadline: 9/14/07,www: http://www.see.ed.ac.uk/ICMTS/

May 25 - 29, 2008, @ International Confer-ence on Indium Phosphide and RelatedMaterials, Location: Palais des congres Versailles,Versailles, France, Contact: Beatrice Valdayron, E-Mail: [email protected], Deadline:Not Available, www: http://www.ieee.org/por-tal/site/leos/

May 27 - 31, 2008, T International PowerModulator Symposium, Location: Man-dalay, Bay Resort & Casino, Las Vegas, NV,USA, Contact: Teresa Stewart, E-Mail: [email protected], Deadline: Not Available,www: www.cavs.msstate.edu/pmc2008

June 2 - 6, 2008, T International Conferenceon Unsolved Problems of Noise, Location:Lyon, France, Contact: Lino Reggiani, E-Mail:[email protected], Deadline: Not Available,www: Not Available

June 8 - 13, 2008, T International Confer-ence on Ion Implantation Technology,Location: Monterey Converence Center, Monterey,CA, USA, Contact: Susan Felch, E-Mail:[email protected], Deadline: 12/15/07,www: http://www.iit2008.com/

June 15 - 17, 2008, T IEEE Radio FrequencyIntegrated Circuits Symposium, Location:George World Congress Center, Atlanta, GA,USA, Contact: Jenshan Lin, E-Mail:[email protected], Deadline: 1/3/08, www:www.rfic2008.org

June 17 - 19, 2008, @ IEEE Symposium onVLSI Technology, Location: Hilton Hawaiian Vil-lage, Honolulu, HI, USA, Contact: Phyllis Mahoney,

E-Mail: [email protected], Deadline: NotAvailable, www: www.vlsisymposium.org

June 18 - 20, 2008, T IEEE Symposium on VLSICircuits, Location: Hilton Hawaiian Villiage, Hon-olulu, HI, USA, Contact: Phyllis Mahoney, E-Mail:[email protected], Deadline: Not Available,www: www.vlsisymposium.org

June 19 - 21, 2008, T International MIXDESConference, Location: Poznan, Poland,Contact: Mariusz Orlikowski, E-Mail: [email protected], Deadline: 2/29/08, www:http://www.mixdes.org

July 2008, T Conference on Optoelectronicand Microelectronic Materials & Devices,Location: Sidney, Australia, Contact: ChennupatiJagadish, E-Mail: [email protected],Deadline: Not Available, www: Not Available

July 1 - 5, 2008, T International SiberianWorkshop and Tutorial on ElectronDevices and Materials, Location: NovosibirskState Technical University, Novosibirsk, Russia,Contact: Alexander Gridchin, E-Mail:[email protected], Deadline: 3/15/08, www:http://www.nstu.ru/edm

July 6 - 11, 2008, T International Conferenceon High-Power Particle Beams, Location:Inst. Of Fluid Physics China Academy of Eng.Phys., Xian, China, Contact: JianJun Deng, E-Mail:[email protected], Deadline:2/29/08, www: http://ifp.caep.ac.cn/beams2008/

July 7 - 11, 2008, T IEEE International Sympo-sium on the Physical and Failure Analysisof Integrated Circuits, Location: Singapore,China, Contact: Tung Chih-Hang, E-Mail: [email protected], Deadline: Not Available,www: Not Available

July 13 - 16, 2008, T University/Govern-ment/Industry Microelectronics Sympo-sium, Location: University of Louisville, Louisville,KY, USA, Contact: Kevin Walsh, E-Mail:[email protected] or [email protected], Deadline:Not Available, www: www.louisville.edu/micro-nano/UGIM2008

July 21 - 25, 2008, T European Electromag-netics Conference, Location: Swiss Federal Inst.Of Technology, Lausanne, Switzerland, Contact:Farhad Rachidi, E-Mail: [email protected],Deadline: 1/31/08, www: www.euroem.org

July 27 - August 1, 2008, T International Con-ference on the Physics of Semiconductors

Location: Rio de Janeiro, Brazil, Contact: ICPS, E-Mail: [email protected], Deadline:3/1/08, www: www.icps2008.org

August 5 - 7, 2008, T Lester Eastman BiennialConference on High Performance Devices,Location: University of Delaware, Newark, DE,USA, Contact: Michael Shur, E-Mail:[email protected], Deadline: 5/1/08, www:http://nina.ecse.rpi.edu/shur/EastmanConference/

August 18 - 21, 2008, T IEEE Conference onNanotechnology, Location: Sheraton Hotel &Arlington Convention Center, Arlington, TX,USA, Contact: Supriyo Bandyopadhyay, E-Mail:[email protected], Deadline: 11/16/07, www:http://www.ewh.ieee.org/r5/fort_worth/nano2008.html

August 20 - 24, 2008, T International Confer-ence on Hot-Wire (Cat-CVD) Process, Loca-tion: MIT, Cambridge, MA, USA, Contact: KarenGleason, E-Mail: [email protected], Deadline:1/15/08, www: http://web.mit.edu/hwcvd5/

September 1 - 4, 2008, T Symposium onMicroelectronics Technology & Devices,Location: Rio Othon Palace, Gramado, Brazil,Contact: Jacobus Swart, E-Mail: [email protected], Deadline: 3/19/08, www: www.sbmi-cro.org.br/sbmicro

September 7 - 11, 2008, T Electrical Over-stress/Electrostatic Discharge Sympo-sium, Location: Westin La Paloma, Tucson, AZ,USA, Contact: Lisa Pimpinella, E-Mail:[email protected], Deadline: 1/11/08, www:http://www.esda.org/index.htm

September 9 - 11, 2008, @ InternationalConference on Simulation of Semicon-ductor Processes and Devices, Location:Yumoto Fujiya Hotel, Hakone-machi, Japan, Con-tact: Kazuya Matsuzawa, E-Mail: [email protected], Deadline: 3/1/08,www: http://www6.eie.eng.osaka-u.ac.jp/sis-pad/2008/

September 15 - 19, 2008, T European Solid-State Device Research Conference, Location:Edingburgh International Conference Centre, Scot-land, Contact: Giorgio Baccarani, E-Mail: [email protected], Deadline: Not Available, www:http://www.essderc.org/en/page/home.aspx

September 21 - 24, 2008, T IEEE Custom Inte-grated Circuits Conference, Location: DoubleTree Hotel, San Jose, CA, USA, Contact: MelissaWiderkehr, E-Mail: [email protected], Dead-line: Not Available, www: http://www.ieee-cicc.org


One of the top IEEE Societies withyoung professional membersincludes the IEEE Electron DevicesSociety. Many of these memberswould appreciate the opportunity tohave an “online” mentor to helpguide them in their career planningand professional development.Mentor participation in the IEEEMentoring Connection Program isopen to all IEEE members abovethe grade of Student Member. GaryHinkle, a mentor in the program,says “Helping young engineersdevelop in their careers is veryrewarding. Working with some of

these individuals has proven to bequite a challenge, because of thediversity among those seekingmentors. I’m glad to be contributingto this program.”

The program enables the menteeto select their mentoring partneronline from a list of individuals whohave volunteered to serve as men-tors. After mentors are identified as apotential match, they are contactedand asked to begin establishing arelationship. Interested members canvisit http://www.ieee.org/web/mem-bership/mentoring/index.html forinformation on the roles and respon-

sibilities of each mentoring partner,including additional program infor-mation and a FAQ page. Potentialmentors are asked to review the timeand effort commitment to the pro-gram necessary to ensure a success-ful mentoring partnership. To accessthe IEEE Mentoring Connection site,please go to http://www.mentoring-connection.com and use the GroupID “IEEE2006” to enter. Once youenter the site, you will need to setyour own user id and password.

If you have any questions, pleasecontact Cathy Downer, RegionalActivities, at [email protected].

IEEE Mentoring Connection™Program Seeks Members

to Mentor Young Professionals

IEEE Mentoring Connection™Program Seeks Members

to Mentor Young Professionals

New EDITORIAL STAFFEDITORIAL STAFF · 2012. 2. 7. · Elected for a three-year term (maximum two...

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Transcript of New EDITORIAL STAFFEDITORIAL STAFF · 2012. 2. 7. · Elected for a three-year term (maximum two...