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Transcript of Ncp1032 d
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 21 Publication Order Number:
NCP1032/D
NCP1032
Low Power PWM Controllerwith On-Chip Power Switchand Startup Circuits forTelecom Systems
The NCP1032 is a miniature high−voltage monolithic switchingconverter with on−chip power switch and startup circuits. Itincorporates in a single IC all the active power control logic andprotection circuitry required to implement, with minimal externalcomponents several switching regulator applications, such as asecondary side bias supply or a low power DC−DC converter. Thisconverter is ideally suited for 24 V and 48 V telecom and medicalisolated power supply applications. The NCP1032 can be configuredin any single−ended topology such as forward or flyback converter.The NCP1032 is targeted for applications requiring up to 3 W.
The internal error amplifier allows the NCP1032 to be easilyconfigured for secondary or primary side regulation operation inisolated and non−isolated configurations. The fixed frequencyoscillator is optimized for operation up to 1 MHz and is capable ofexternal frequency synchronization, providing additional designflexibility. In addition, the NCP1032 incorporates undervoltage andovervoltage line detectors, programmable cycle−by−cycle currentlimit, internal soft−start, and thermal shutdown to protect thecontroller under fault conditions.
Features• On Chip High 200 V Power Switch Circuit and Startup Circuit
• Internal Startup Regulator with Auxiliary Winding Override
• Programmable Oscillator Frequency Operation up to 1 MHz
• External Frequency Synchronization Capability
• Frequency Fold−down Under Fault Conditions
• Trimmed ± 2% Internal Reference
• Programmable Cycle−by−Cycle Current Limit
• Internal Soft−Start
• Active Leading Edge Blanking Circuit
• Line Under and Over Voltage Protection
• Over Temperature Protection
• These are Pb−Free Devices
Typical Applications• POE (Power Over Ethernet)/PD. Refer to Application Note AND8247
• Secondary Side Bias Supply for Isolated DC−DC Converters
• Stand Alone Low Power DC−DC Converter
• Low Power Bias Supply
• Low Power Boost Converter
• Medical Isolated Power Supplies
• Bias Supply for Telecom Systems. Refer to App Note AND8119/D
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MARKINGDIAGRAMS
1032 = Specific Device Markingx = A or BA = Assembly LocationL = Wafer LotY = YearW = Work Week� = Pb−Free Package
PIN CONNECTIONS
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the packagedimensions section on page 20 of this data sheet.
ORDERING INFORMATION
WDFN8MN SUFFIX
CASE 511BH
1032xALYW �
�
ÇÇÇÇÇÇÇÇ
ÇÇÇÇ
WDFN8 (Top View)
GND
GND
CT
VFB
COMP
VCC
VDRAIN
CL
UV/OV
1
NCP1032
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Figure 1. Typical Application – Dual Output Auxiliary Regulated Isolated Flyback
D1
D2
COUT
CVCC
Cin
R3
R4 RCL
CCT
CC RC
CP R1
R2
NCP 1032
VD
RA
IN VCC
CL
COMP
VFBG
ND
CT
UV/OV
VIN VOUT
2.2 �F 22 �F
2.2 �F
Figure 2. NCP1032 Simplified Block Diagram
I1
3.0 V/3.5 V
S R
PWMCOMP
NCL
NSS
30 ns One Shot
−+
2.5 V
ErrorAmplifier
−+
−+
5.7 V
−+
−+
UVComp
OVComp
2.24 V
I2
Duty
LEB
ISET
FB
COMP
OV/UV
7.6 V
10.2 V
FaultLogic
NUVLO
NLOWVCC
HIVCC
NUVLO
NLOWVCC
HIVCC
IN1
IN2IN3IN4
UVBAR
UVBAR
NUV OUT2
NUV
NOV
NOVIN5
IN6nstart
Fault
Fault
Fault
LEBOUT
LEBOUT
CurrentLimitSS
IN7Thermal Trip
12.5 mA
PGND VDRAIN
OUT3
Driver
RT
UVBAR
Internal Bias
nstartVCC
Internal Bias
Internal Bias
(all pins except VDRAIN pin are protected by 10 V ESD diodes)
Cycle= 75%
Delay
2 k�
2 k�
1.0 V
2 k�
2 k�
2 k�
3.5 V
150 k�
2 k�
6.6 V
Q SETCLRQ
NCP1032
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Table 1. FUNCTIONAL PIN DESCRIPTION
Pin Name Function Description
1 GND IC Ground Ground reference pin for the circuit.
2 CT Oscillator FrequencySelection
An external capacitor connected to this pin sets the oscillator frequency up to 1 MHz. Theoscillator can be synchronized to a higher frequency by charging or discharging CT to trip theinternal 3.0 V/3.5 V comparators. If a fault condition exists, the power switch is disabled andthe frequency is reduced.
3 VFB Feedback Signal Input The regulated voltage is scaled down to 2.5 V by means of a resistor divider. Regulation isachieved by comparing the scaled voltage to an internal 2.5 V reference.
4 COMP Error AmplifierCompensation
The output of the internal error amplifier. External compensation network between COMPand VFB pin is required for stable operation.
5 CL Current Limit ThresholdSelection
A resistor RCL connected between this pin and ground sets the peak current value of thecurrent limit. If the CL pin is left open, the current limit value is set to its initial maximum valueof approximately 12 mA (CLIM_MAX). Programmable current limit threshold, together withinternal soft−start feature effectively limits the primary transformer high current peaks duringstartup phase.
6 UV/OV Input Line Undervoltageand Overvoltage
Shutdown
Input line voltage is scaled down using an external resistor divider. The minimum operatingVin voltage is achieved when the voltage on UV/OV pin reaches UV threshold 1.0 V. Themaximum operating voltage is then limited by 2.4 V on UV/OV pin. A device version withoutOV protection feature is available, see ordering information section.
7 VCC Powers the InternalCircuitry
Supplies power to the internal control circuitry. Connect an external capacitor for energystorage during startup. The Vcc voltage should not exceed 16 V during operation.
8 VDRAIN Drain Connection Connects the power switch and startup circuit to the primary transformer windings.
EP EP Thermal Flag This is the thermal flag for the IC and should be soldered to the ground plane.
Table 2. MAXIMUM RATINGS
Rating Symbol Value Unit
Power Switch and Startup Circuits Voltage BVdss −0.3 to +200 V
VCC Power Supply Voltage VCC −0.3 to +16 V
Power Supply Voltage on all Pins, except VDRAIN and VCC VIO −0.3 to +10 V
Drain Current Peak During Transformer Saturation IDS(pk) 1.0 A
Thermal Resistance Junction−to−Air –W DFN8 3x3, case 511BH(100 sq mm, 2oz) (Note 4)(500 sq mm, 2oz) (Note 4)(100 sq mm,2oz,) (Note 5)
R�JA1096444
°C/W
Maximum Junction Temperature TJMAX 150 °C
Storage Temperature Range TSTG −60 to +150 °C
ESD Capability, Human Body Model Pins 1−7 (Note 1) 4.0 kV
ESD Capability, Machine Model Pins 1−7 (Note 1) 400 V
Pin 8 is connected to the high voltage startup and power switch which is protected tothe maximum drain voltage
200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) ± 2.0 kV per JEDEC standard: JESD22−A114.Machine Model (MM) ± 200 V per JEDEC standard: JESD22−A115.
2. This device contains latch−up protection and it exceeds ± 100 mA per JEDEC standard: JESD78 class II3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A4. EIA JEDEC 51.3, single layer PCB with added heat spreader5. EIA JEDEC 51.7, four layer PCB with added heat spreader
NCP1032
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Table 3. ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VDRAIN = 48 V, VCC = 12 V, unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
SUPPLY SECTION AND VCC MANAGEMENT
VCC_ON Vcc Voltage at Which the SwitcherStarts Operation
VCC Increasing 9.9 10.2 10.5 V
VCC_MIN Minimum Operating VCC After Turn onat Which HV Current Source Restarts
VCC Decreasing 7.40 7.55 7.7 V
VCC_RST Vcc Undervoltage Lockout Voltage VCC Decreasing, VFB = VCOMP 6.75 6.95 7.15 V
ICC1 Internal IC Consumption Power Switch Enabled
MOSFET is switching at 300 kHz 2.0 2.9 4.0 mA
ICC2 Internal IC ConsumptionPower Switch Disabled
No Fault condition, VFB = 2.7 V − 2.0 2.5 mA
ICC3 Internal IC ConsumptionPower Switch Disabled
Fault condition,VFB = 2.7 V, VUV/OV < 1.0 V
− 0.75 1.5 mA
POWER SWITCH CIRCUIT
RDSON Power Switch Circuit On−StateResistance
ID = 100 mATJ = 25°CTJ = 125°C
−−
4.24.9
5.18.0
�
BVdss Power Switch Circuit and StartupBreakdown Voltage
IDS_OFF = 100 �A, VUV_OV < 1.0 VTj = 25°C
200 − − V
IDS_OFF Power Switch Circuit and StartupCircuit Off−State Leakage Current
VDRAIN = 200 V, VUV_OV < 1.0 VTJ = 25°CTJ = −40°C to 125°C
−−
2020
2530
�A
tR Switching Characteristics − Rise Time VDS = 48 V, RL = 480 �, Time(10%−90%)
− 7 − ns
tf Switching Characteristics − Fall Time VDS = 48 V, RL = 480 �, Time(90%−10%)
− 10 − ns
INTERNAL STARTUP CURRENT SOURCE
ISTART1 HV Current Source Vcc = 0 V,Tj = 25°CTj = −40°C to 125°C
10.09.0
12.0−
14.015.0
mA
ISTART2 HV Current Source Vcc = VCC_ON − 0.2 VTj = 25°CTj = −40°C to 125°C
9.08.0
11.0−
13.016.0
mA
Vstart_min Minimum Startup Voltage ISTART2 = 0.5 mA, Vcc = VCC_ON − 0.2 V, Tj = 25°C − 16.3 −
V
ERROR AMPLIFIER
VREF Reference Voltage VCOMP = VFB, Follower ModeTJ = 25°CTJ = −40°C to 125°C
2.452.40
2.52.5
2.552.60
V
REGLINE Line Regulation VCC = 8 V to 16 V, TJ = 25°C − 1.0 3.0 mV
IVFB Input Bias Current VFB = 2.3 V − 70 150 nA
ISRC COMP Source Current VFB = 2.3 V 80 95 125 �A
ISNK COMP Sink Current VFB = 2.7 V 500 700 900 �A
VC_MAX COMP Maximum Voltage ISRC = 0 �A, VFB = 2.3 V 3.95 4.17 4.5 V
VC_MIN COMP Minimum Voltage ISNK = 0 �A, VFB = 2.7 V − 91 200 mV
AVOL Open Loop Voltage Gain (Note 6) − 80 − dB
GBW Gain Bandwidth Product (Note 6) − 1.0 − MHz
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Table 3. ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VDRAIN = 48 V, VCC = 12 V, unless otherwise noted)
Symbol UnitMaxTypMinConditionsParameter
CURRENT LIMIT AND PWM COMPARATOR
CLIM_MAX Max Current Limit Threshold CL pin Floating, TJ = 25°C,(di/dt = 0.5 A/�s) 420 512 600
mA
CLIM_MIN Min Current Limit Threshold RCL = 20 k�, TJ = 25°C, (di/dt = 0.1 A/�s) − 57 −
mA
TPLH Propagation Delay from Current Limit Detection to theDrain OFF State (Note 6)
− 100 − ns
TON_MIN Min On Time Pulse Width FSW = 300 kHz (Note 6) − 240 − ns
Tss Soft−Start Duration (Note 6) − 2.0 − ms
LINE UNDER/OVERVOLTAGE PROTECTIONS
Vuv Undervoltage Lockout Threshold VFB = VCOMP, Vin decreasing 0.95 1.067 1.18 V
VUV_hys Undervoltage Lockout Hysteresis − 70 − mV
Iuv Input Bias Current VFB = 2.3 V − 0 1 �A
VOV Overvoltage Lockout Threshold VFB = VCOMP, Vin increasing (Note 7) 2.3 2.41 2.5 V
Vov_hys Overvoltage Lockout Hysteresis − 158 − mV
TEMPERATURE MANAGEMENT
TSD Thermal Shutdown (Note 6) 175 °C
Hysteresis in Shutdown (Note 6) 20 °C
INTERNAL OSCILLATOR
fOSC1 Oscillation Frequency, 300 kHz CT = 560 pF (Note 9)TJ = 25°CTJ = −40°C to 125°C
275270
300−
325335
kHz
fOSC2 Oscillation Frequency, 960 kHz CT = 100 pF, TJ = 25°C − 960 − kHz
ICT_C Timing Charge Current VCT = 3.25 V − 172 − �A
ICT_D Timing Discharge Current VCT = 3.25 V 517 �A
VR_pk Oscillator Ramp Peak Voltage − 3.492 − V
VR_VLY Oscillator Ramp Valley − 2.992 − V
DCMAx Maximum Duty Cycle 70 76.5 80 %
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.6. Guaranteed by design and characterized7. The OV/UV option is disabled on the NCP1032B version8. Oscillator frequency can be externally synchronized to the maximum frequency of the device
NCP1032
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TYPICAL OPERATING CHARACTERISTICS – Dual Output Isolated Flyback Converter
Figure 3. Efficiency vs. IOUT at VIN = 24, 36, 48and 72 V, T1 = CoilCraft B0226−EL
Figure 4. VCC Pin Load Regulation at VIN = 24,36, 48 and 72 V
IOUT (mA) IOUT (mA)
20017515010075502500
10
20
30
50
60
70
80
200175150100755025012.060
12.065
12.070
12.075
12.080
12.090
12.095
12.100
Figure 5. Startup Sequence, RCL Open, OutputLoad = 80 � (IOUT = 150 mA), 1 VCC 3.0 V/div DC, 2 VOUT 3.0 V/div DC, 3 VIN 10.0 V/
div DC, 4 IPRI 100 mA/div DC, T = 20 ms/div
Figure 6. Soft−Start, RCL open, Output NoLoad 1 VCC 3.0 V/div DC, 2 VOUT 3.0 V/div DC,
3 VIN 10.0 V/div DC, 4 IPRI 100 mA/div DC,T = 500 �s/div
Figure 7. Soft−Start, RCL = 32 k� (CLIM =250 mA), Output Load = 240 � (IOUT = 50 mA),1 VCC 3.0 V/div DC, 2 VOUT 3.0 V/div DC, 3 VIN
10.0 V/div DC, 4 IPRI 100 mA/div DC,T = 1.0 ms/div
Figure 8. Discontinuous Conduction Mode(DCM), IOUT = 150 mA, 2 VDRAIN 20 V/div DC, 3 ISEC 30 mA/div DC, 4 IPRI 100 mA/div, DC,
T = 500 ns/div
EF
FIC
IEN
CY
(%
)
VO
UT (
V)
125 225
40
36 V48 V
72 V
24 V
18 V
125 225
12.085
36 V
48 V 72 V24 V
18 V
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TYPICAL OPERATING CHARACTERISTICS
Figure 9. Frequency vs. Timing Capacitor CTat 25�C
Figure 10. Oscillator Frequency vs. JunctionTemperature
CAPACITANCE (pF) AMBIENT TEMPERATURE (°C)
24802000152010405608050
100
200
400
800
1600
100806040200−20−40300
400
500
600
800
900
1000
1100
Figure 11. Maximum Duty Ratio vs.Temperature
Figure 12. Maximum Duty Ratio vs. VCCVoltage
AMBIENT TEMPERATURE (°C) VCC (V)
100806040200−20−4074.0
74.2
74.6
74.8
75.0
75.4
75.8
76.0
1514131211109874.0
74.3
74.6
74.9
75.2
75.5
Figure 13. Minimum On Time vs. VCC Figure 14. Power Switch Circuit and StartupCircuit Leakage Current vs. Drain Voltage
VCC (V) DRAIN VOLTAGE (V)
15141312111098100
120
160
180
220
240
280
300
240200160120804000
4
8
12
16
20
2830
FR
EQ
UE
NC
Y (
kHz)
SW
ITC
HIN
G F
RE
QU
EN
CY
(kH
z)
DU
TY
CY
CLE
(%
)
DU
TY
CY
CLE
(%
)
MIN
ON
TIM
E (
ns)
I DS
(off)
, PO
WE
R S
WIT
CH
AN
D S
TAR
TU
PC
IRC
UIT
S L
EA
KA
GE
CU
RR
EN
T (�A
)
120
700
CT = 82 pF
CT = 220 pF
CT = 560 pF
120
74.4
75.2
75.6 1.04 MHz597 kHz320 kHz
128 kHz
16
VDRAIN = 100 V
VDRAIN = 48 V
VDRAIN = 15 V
16
140
200
260
VDRAIN = 100 V
VDRAIN = 48 V
VDRAIN = 15 V24
6
10
14
18
22
26
2
125°C
25°C
−40°C
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TYPICAL OPERATING CHARACTERISTICS
Figure 15. Power Switch RDSON vs. JunctionTemperature
Figure 16. Vdrain Startup Threshold overTemperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−402.93.1
3.5
3.9
4.3
4.7
5.1
5.5
100806040200−20−4016.10
16.14
16.18
16.22
Figure 17. Startup Current vs. JunctionTemperature
Figure 18. Undervoltage Lockout Thresholdvs. Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−4010.210.4
10.8
11.2
11.611.8
12.4
12.8
100806040200−20−406.930
6.935
6.940
6.945
6.950
6.955
6.960
6.965
Figure 19. Supply Voltage Thresholds vs.Junction Temperature
Figure 20. VCC Input Current at 12 V with an18 V applied Drain voltage 25�C VS Oscillator
Frequency
TJ, JUNCTION TEMPERATURE (°C) FREQUENCY (kHz)
100806040200−20−407.257.50
8.00
8.50
9.00
9.50
10.00
10.50
8007006005004003002001002.002.25
3.003.25
3.75
4.25
4.75
5.25
RD
S(o
n), P
OW
ER
SW
ITC
H O
NR
ES
ISTA
NC
E (�
)
VC
C(r
eset
), U
ND
ER
VO
LTA
GE
LOC
KO
UT
TH
RE
SH
OLD
(V
)
I STA
RT,
STA
RT
UP
CU
RR
EN
T (
mA
)
VC
C(r
eset
), U
ND
ER
VO
LTA
GE
LOC
KO
UT
TH
RE
SH
OLD
(V
)
UV
TH
RE
SH
OLD
(V
)
INP
UT
CU
RR
EN
T (
mA
)
120
3.3
3.7
4.1
4.5
4.9
5.3
VCC = 16 V
VCC = 12 V
VCC = 8 V
16.12
16.16
16.20
16.24
16.30
16.34
16.38
16.28
16.32
16.36
16.40
16.26
120
120
10.6
11.0
11.4
12.012.2
12.6
VCC = VCC(on) − 0.2 V
VCC = 0 V
120
120
7.75
8.25
8.75
9.25
9.75
10.25Startup Threshold
Minimum Operating Threshold
900 1000
2.502.75
3.50
4.00
4.50
5.00
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TYPICAL OPERATING CHARACTERISTICS
Figure 21. Operating Supply Current vs.Supply Voltage at 320 kHz
Figure 22. VCC Input Current vs. Temperatureover Frequency span VDrain = 48 V
VCC, SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (°C)
151413121110982.12.3
2.7
2.9
3.1
3.5
3.7
4.1
100806040200−20−402.0
2.5
3.5
4.0
4.5
5.5
6.0
6.5
Figure 23. COMP Clamp Voltage vs. JunctionTemperature
Figure 24. Reference Voltage vs. JunctionTemperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−404.114.12
4.14
4.16
4.18
4.20
4.21
4.23
100806040200−20−402.488
2.490
2.491
2.493
2.495
2.496
2.498
2.500
Figure 25. COMP Source Current vs. JunctionTemperature
Figure 26. COMP Sink Current vs. JunctionTemperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−4094.00
94.25
94.75
95.00
95.25
95.75
96.00
96.50
100806040200−20−40620
640
680
700
720
740
780
800
I CC
1, O
PE
RA
TIN
G S
UP
PLY
CU
RR
EN
T (
mA
)
INP
UT
CU
RR
EN
T (
mA
)
Vc
CLA
MP
(V
)
RE
FE
RE
NC
E V
OLT
AG
E (
V)
SO
UR
CE
CU
RR
EN
T (�A
)
SIN
K C
UR
RE
NT
(�A
)
16
2.5
3.3
3.9 VDRAIN = 48 VTJ = 25°CCT = 560 pF
120
3.0
5.0
1.04 MHz
597 kHz
320 kHz
128 kHz
2.489
2.492
2.494
2.497
2.499
120
VCC = 16 V
VCC = 12 VVCC = 8 V
120
94.50
95.50
96.25 VCC = 16 V
VCC = 12 V
VCC = 8 V
120
660
760
120
4.13
4.15
4.17
4.19
4.22
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TYPICAL OPERATING CHARACTERISTICS
Figure 27. Undervoltage Threshold vs.Junction Temperature
Figure 28. Overvoltage Threshold vs. JunctionTemperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−401.0601.061
1.063
1.065
1.067
1.069
1.070
1.072
100806040200−20−402.394
Figure 29. Under/Overvoltage Hysteresis vs.Junction Temperature
Figure 30. Current Limit Threshold vs. RCL,Current Slew Rate = 0.5 A/�s
TJ, JUNCTION TEMPERATURE (°C) RISET (k�)
100806040200−20−4060
80
90
110
130
150
160
180
1801401201008060402050
100
150
200
250
350
400
450
Figure 31. Current Limit Threshold vs. CurrentSlew Rate
Figure 32. Current Limit Threshold vs. TJ,Current Slew RISET = Open = 0.5 A/�s, RISET= 55 k� = 0.3 A/�s, RISET = 22 k� = 0.1 A/�s
CURRENT SLEW RATE (mA/�S) TJ, JUNCTION TEMPERATURE (°C)
10008007004003002001000270
280
290
300
310
320
330
340
100806040200−20−4050
100
200
250
300
400
500
550
UV
TH
RE
SH
OLD
(V
)
OV
TH
RE
SH
OLD
(V
)
VU
V/O
V(h
ys),
HY
ST
ER
ES
IS (
mV
)
I LIM
, CU
RR
EN
T L
IMIT
TH
RE
SH
OLD
(m
A)
I LIM
, CU
RR
EN
T L
IMIT
TH
RE
SH
OLD
(m
A)
VCC = 16 V
VCC = 12 V
VCC = 8 V
120
1.062
1.064
1.066
1.068
1.071 VCC = 16 V
VCC = 12 V
VCC = 8 V
120
2.3962.3982.4002.4022.4042.4062.4082.4102.4122.4142.4162.4182.4202.422
70
100
120
140
170
120
OV Hysteresis
UV Hysteresis
160 200
300
600500 900
25 V 72 V
120 �H
I LIM
, CU
RR
EN
T L
IMIT
TH
RE
SH
OLD
(m
A)
120
150
350
450RISET = OPEN
RISET = 50 k�
RISET = 22 k�
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CT Ramp
CT ChargeSignal
PWMComparator
Output
Power SwitchCircuit Gate Drive
PWM LatchOutput
Leading EdgeBlanking Output
Current LimitPropagation
Current LimitThreshold
Output OverloadNormal PWM Operating Range
Figure 33. Pulse Width Modulation Timing Diagram
Delay
Output OverloadNormal OperationStartupMode
DynamicSelf Supply
VCC(on)
VCC(off)VCC(reset)
0 VISTART
0 mA
0 V
3.0 V
2.5 V
0 V
0 V
Figure 34. Auxiliary Winding Operation with Output Overload Timing Diagram
VDRAIN
VFB
VUV
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IntroductionThe NCP1032 is a monolithic voltage−mode switching
regulator designed for isolated and non−isolated bias supplyapplications. The internal startup circuit and the MOSFETare rated at 200 V, making them ideal for 24 V through 48 Vtelecom and 42 V automotive applications. In addition, theNCP1032 can operate from an existing 12 V supply. Theregulator is optimized for operation up to 1 MHz.
The NCP1032 device incorporates all of the active power,control logic, protection circuitry, and power switch in asingle IC. The compact design allows the designer to useminimal external components on several switchingregulator applications, such as a secondary side bias supplyor a low power DC−DC converter.
The NCP1032 is available in the space saving WDFN83 x 3 mm package and is targeted for applications requiringup to 3 W.
The NCP1032 has an extensive set of features includingprogrammable cycle−by−cycle current limit, internalsoft−start, input line under and over voltage detectioncomparators with hysteresis, regulator output undervoltagelockout with hysteresis and over temperature protectionproviding protection during fault conditions. A descriptionof each of the functional blocks is given below and thefunctional block diagram is shown in Figure 2.
Startup Supply Circuit and Undervoltage LockoutThe NCP1032 contains an internal 200 V startup regulator
that eliminates the need for external startup components.The startup regulator consists of a 12 mA (typical) currentsource that supplies power from the input line (VDRAIN)pin to charge the capacitor on the VCC pin (CVCC). The actof charging the CVCC capacitor until it reaches 10.2 V whileholding the power switch off is called Startup Mode (SM).Once the current source charges the VCC voltage to 10.2 V(typical) the startup circuit is disabled and if no faults arepresent, the power switch circuit is enabled. The internalcontrol circuitry will draw its current from the energy heldby the CVCC capacitor. The startup regulator turns on againonce VCC reaches 7.55 V. The charging of the CVCCcapacitor to 10.2 V by the current source and the dischargingby the control circuitry to 7.55 V will be henceforth referredto as Dynamic Self Supply (DSS).
If VCC falls below 7.55 V while switching, the deviceenters a Restart Mode (RM). While in the RM the CVCCcapacitor is allowed to discharge to 6.95 V while the powerswitch is enabled. Once the 6.95 V threshold is reached, thepower switch circuit is disabled, and the startup regulator isenabled to charge the CVCC capacitor. The power switch isenabled again once the VCC voltage reaches 10.2 V.Therefore, the external CVCC capacitor must be sized suchthat a voltage greater than 6.95 V is maintained on the VCCpin while the converter output reaches regulation. Theoutput is delayed 0.4 ms (TSS_Delay) from the releasedundervoltage lockout to the first switching pulse. Thesoft−start time TSS is fixed at 2 ms to ramp the current from
its minimum value to its maximum value. The soft−starttime is load and RCL dependent and can be computed in thesoft−start section. The designer must evaluate the currentdraw of the regulator at the desired switching frequency overthe VCC and temperature operating range shown in Figures20 − 22. CVCC is calculated using the following equation:
CVCC �ICC � �TSS_Delay � TSS
�VCC_ON � VCC_MIN
�
2.95 �F �4.0 mA � �0.4 ms � 2.0 ms�
10.2 V � 6.95 V
(eq. 1)
ICC includes the NCP1032 bias current (ICC1_MAX) andany additional current used to bias the feedback (if used).Assuming an ICC1_MAX of 3.5 mA plus a 0.5 mA biascurrent for the feedback sensing resistors (if used), and Tssof 2 ms, CVCC is calculated at 2.95 �F and should be roundedup to ensure design margin to 3.3 �F. Please note that if thefeedback sensing resistors are connected to the VCC pin(isolated main output topology) and CVCC is increased tomatch COUT, the transient response of the converter willsuffer. The poor transient response is due to the imbalancedcapacitance to current ratio. The auxiliary winding has asignificantly greater capacitance to current ratio than theoutput winding, taking it longer for CVCC to follow COUTduring a transient condition.
After initial startup, the VCC pin should be biased aboveVCC_min using an auxiliary winding. This will prevent thestartup regulator from turning on during normal operation,reducing device power dissipation. A load should not bedirectly connected to the VCC pin. A load greater than12 mA will override the startup circuit possibly damagingthe part. The maximum voltage rating of the startup circuitis 200 V. Power dissipation should be observed to avoidexceeding the maximum power dissipation of the package.Figure 35 shows the recommended configuration for anon−isolated flyback converter.
Figure 35. Non−Isolated Bias SupplyConfiguration
D1
D2
COUT
CVCC
Cin
R3
R4RCL
CCT
CC RC
CPR1
R2
VD
RA
IN VCCCL
COMP
VFBGN
D
CT
UV/OV
VIN VOUTT1
Lsec
Lbias
Lpri
NCP1032
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Soft−StartThe NCP1032 features an internal soft−start which
reduces power−on stress and also contributes to the loweroutput overshoot. Once the VCC_ON threshold is reachedand there are no fault conditions, the power switch is enabledand the cycle−by−cycle current limit is ramped up slowly tothe current limit threshold set by the CL pin. If the CL pinis open, the current limit will be set to its maximum value
and the soft−start time will be 2 ms as shown in Figure 36.The equation below can be used to calculate the soft−starttime for all other current limit set values.
TSSR �SetCurrent � MinCurrentMaxCurrent � MinCurrent
� TSS �
1.07 ms �300 mA � 57 mA
512 mA � 57 mA� 2 ms
(eq. 2)
COMP Voltage
4.2 V3.5
3.0 V
PWM Signal
Ramp
Inductor Current
Current Limit
57 mA
Set Limit
Soft−Start Time CorrectionTime
Figure 36. Soft−Start Time
The compensation of the converter must be manipulatedto minimize the overshoot of the output voltage duringstartup, details are in the compensation section.
Line Under and Over Voltage DetectorsThe NCP1032 incorporates Vin input line under voltage
(UV) and over voltage (OV) shutdown circuits. If theUV/OV pin is set below 1.0 V or above 2.4 V thresholds thepower switch will stop switching and the part will use DSSuntil the problem is corrected. The comparators incorporatetypical voltage hysteresis of 70 mV (UV) and 158 mV (OV)to prevent noise from inadvertently triggering the shutdowncircuit. The UV/OV sense pin can be biased using anexternal resistor divider from the input line as shown inFigure 37. The UV/OV pin should be bypassed using a 1 nFcapacitor to prevent triggering the UV/OV circuit duringnormal switching operation.
R3
VIN
1 nFR4 1 V
2.4 V
OVComparator
UVComparator
Fault
OV Enable
Figure 37. UV/OV Resistor Dividerfrom the Input Line
CUV
Logic
The resistive network impedance must not be too high tokeep good voltage accuracy and not too low to minimizepower losses. A 200 k� to 1.2 M� range is recommendedfor the high side resistor R3. If the designer wanted to set theundervoltage threshold to 32 V, the resistor divider should bedesigned according to the following equation:
R4 �VUV � R3
VIN_UV � VUV�
34.49 k� �1.067 � 1 M�
32 V � 1.067 34.0 k� (R96 Value)
(eq. 3)
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The OV threshold monitored at the UV/OV pin is 2.41times higher than the UV threshold, leading to an OVthreshold of 73.3 V for the calculated R96 value. Designerscan quickly set the OV/UV thresholds by referencingFigure 38.
Figure 38. UV/OV Resistor Divider Thresholdswith R4 Set to 10 k
R3 (k�)
450400 5003503002502001501020
40
50
70
90
100
120
INP
UT
VO
LTA
GE
(V
)
30
60
80
110
Overvoltage Threshold
Undervoltage Threshold
The UV/OV pin can also be used to implement a remoteenable/disable function. If an external transistor pulls theUV/OV pin below 1.0 V (or above 2.4 V) the converter willbe disabled and no switching is allowed. A device version isavailable without the OV protection feature, see the orderinginformation section.
Error AmplifierThe internal error amplifier (EA) regulates the output
voltage of the bias supply. The scaled signal is fed into thefeedback pin (VFB) which is the inverting input of the erroramplifier. It compares a scaled voltage signal to an internaltrimmed 2.5 V reference connected to its non−invertinginput.
The output of the error amplifier is internally connectedto a PWM comparator and also available externally throughthe COMP pin for frequency compensation. To insurenormal operation, the EA compensation should be selectedsuch that the EA frequency response crosses 0 dB below80 kHz.
The error amplifier feedback bias current is less than200 nA over the operating range. The output source and sinkcurrents are typically 95 �A and 700 �A, respectively.
Under load transient conditions, COMP may need tomove from the bottom to the top of the CT ramp. A largecurrent is required to complete the COMP swing if smallresistors or large capacitors are used to implement thecompensation network. In which case, the COMP swing willbe limited by the EA source current. Optimum transientresponses are obtained if the compensation componentsallow the COMP pin to swing across its operating range in1 cycle.
Oscillator, Voltage Feed Forward, and Sync CapabilityThe oscillator is optimized for operation up to 1 MHz and
its frequency is set by the external timing capacitor (CT)connected to the CT pin. The oscillator has two modes ofoperation: free running and synchronized (sync). While infree running mode, an internal current source sequentiallycharges and discharges CT generating a voltage rampbetween 3.0 V and 3.5 V. Under normal operatingconditions, the charge (ICT_C) and discharge (ICT_D)currents are typically 172 �A and 515 �A, respectively. Thecharge/discharge current ratio of 1:3 discharges CT in 25%of the total period. The power switch is disabled while CT isdischarging, guaranteeing a maximum duty cycle of 75% asshown in Figure 39.
25%
75%Signal
Power SwitchEnabled
COMP
Max DutyCycle
Figure 39. Auxiliary Winding Operation withOutput Overload Timing Diagram
CT Ramp
CT Charge
The oscillator frequency should be set no more than 25%below the target sync frequency to maintain an adequatevoltage ramp and provide good noise immunity. A possiblecircuit to synchronize the oscillator is shown in Figure 40.
C1R1 R2
2
Figure 40. External FrequencySynchronization Circuit
CT
CT
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Voltage feed forward can be implemented by connectinga resistor from the input voltage to the CT pin. RFF suppliesa current that allows the input voltage to modify themaximum duty cycle rather than the standard 75%maximum. If the designer wanted to implement a fixedlower duty cycle, a resistor can be tied to a fixed voltagesource such as VAUX or a voltage reference. If voltage feedforward is used, the frequency can shift dramaticallydepending on the value of the resistor.
Cin
RFF
CCT
NCP1032VD
RA
IN
GN
D
CT
VIN
Z14 V
IFF2.2 �F
OffOn
TimeOff
TimeOn
Time66%
OffOn
Time75% 58% 53%
OffTime
OnTime
42%
OffTime
OnTime
38%
Off Time
OnTime
29%
OffTime
On
21%
OffTime
On
Feed Forward Voltage
CT PIN Voltage
Figure 41. Voltage Feed Forward
RVFF �VINMIN � Ramp
ICT_D � DMAX � �ICT_C � ICT_D��
320 k� �32 V � 3.25 V
517 �A � 62% � �172 �A � 517 �A�
(eq. 4)
PWM Comparator and LatchThe Pulse Width Modulator (PWM) comparator
compares the error amplifier output (COMP) to the CT rampand generates a proportional duty cycle. The power switchis disabled while COMP voltage is below the CT rampsignal. Once COMP reaches the ramp signal, the powerswitch is enabled. If COMP is at the bottom of the CT ramp,the converter operates at minimum duty cycle. While COMPincreases, the duty cycle increases until COMP reaches thepeak of the CT ramp, at which point the controller operatesat maximum duty cycle.
The CT charge signal is filtered through a one shot pulsegenerator to set the PWM latch and enable switching at thebeginning of each period. Switching is allowed while the CTramp is below COMP and a current limit fault is not present.
The pulse width modulation technique is seen inFigure 39.
The PWM comparator and latch propagation delay areless than 200 ns. If the system is designed to operate with aminimum on time less than 200 ns (no or light load), theconverter will skip pulses. Skipping pulses is usually not aproblem, unless operating at a frequency close to the audiblerange. Skipping pulses is more likely when operating at highfrequencies during high input voltage and minimum loadconditions.
A 2 k� series resistor is included for ESD protectionbetween the internal EA output and the COMP pin. Undernormal operation, a 220 mV offset is observed between theCT ramp and the COMP crossing points. The series resistordoes not interact with the error amplifier transfer function.
Programmable Current LimitThe power switch circuit incorporates SENSEFET®
technology to monitor the drain current. A sense voltage isgenerated by driving a sense element, RSENSE, with a currentproportional to the drain current. The sense voltage iscompared to an externally programmable reference voltageon the non−inverting input of the current limit comparator.If the sense voltage exceeds the setup reference level, thecomparator resets the PWM latch and the switching cycle isterminated. The reference level threshold is programmableby a resistor (RCL) connected to the CL pin shown inFigure 42.
By limiting the peak current to the needs of theapplication, the transformer sizing can be scaledappropriately to the specific requirements which allows thePCB footprint to be minimized. The NCP1032 maximumdrain current limit thresholds are 512 mA.
RCL � 114 � ln(Rset) � 142 (eq. 5)
RCL � 309 � ln(Rset) � 893
Rset 42.2 k�
200 k� � Rset � 42.2 k�
Current LimitComparator
Fault Logic
SenseMOSFET
DRIVER
Leading EdgeBlanking GND
VDRAIN
100 ns
RCL
Soft−Start Ramp++
−
CL
Figure 42. Current Limit Threshold andPropagation Delay
3.2 �A
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The propagation delay is measured from the time anovercurrent fault appears at power switch circuit drain, to thestart of the turn−off transition as shown in Figure 43. Thecurrent limit propagation delay time is typ. 100 ns. Thepropagation must be accounted for when designing thepower supply, as it will result in a constant power outputthrough the transformer when the output is shorted. Theconstant power can cause the transformer to rise intemperature permanently damaging the magnetics. This canbe mitigated by placing a 10 � resistor in series with theoutput rectification diode.
t
Figure 43. Current Limit Threshold andPropagation Delay
ISW
ILIM
TPHL
VINLP
� TPHL
Adaptive Leading Edge BlankingEach time the power switch circuit is turned on, a narrow
voltage spike appears across RSENSE. The spike is due to thepower switch circuit gate to source capacitance, transformerinterwinding capacitance, and output rectifier recoverytime. The spike can cause a premature reset of the PWMlatch. A proprietary active Leading Edge Blanking (LEB)circuit masks the current signal to prevent the voltage spikefrom resetting the PWM latch. The active LEB masks thecurrent signal until the power switch turn on transition iscomplete. The adaptive LEB period provides better currentlimit control compared to a fixed blanking period.
Power Switch Circuit ProtectionThe NCP1032 monolithically integrates a 200 V power
switch with control logic circuitry. The power switch isdesigned to directly drive the converter transformer. Thegate drive is tailored to control switching transitions andhelp limit electromagnetic interference (EMI).
For a Flyback topology a large transient voltage spikeappears at the transformers primary side after the powerswitch turns off. These spikes are a function of thetransformer leakage inductance (LLP) on either the primaryor secondary side. A circuit is needed to clamp the leakagespike, limiting the voltage drain excursion to a safe value.The operating VDRAIN_MAX is 200 V as depicted inFigure 44. Two such circuits are the passive RCD networkor a zener clamp as depicted in Figure 45 and Figure 46.
t
Figure 44. Power Switch Waveforms with Clamping
VIN
VCLAMPVR
VDRAIN
VLS (leakage spike)
VDRAIN_MAX (180 V)
Vin
D_Clamp
Cclamp−
+Cin D1
+
Rcl
T1
−
Cvcc
Cout
Rcl
amp
U?
NCP1032_33
VCC 7
VD
RA
IN8
CL 5
VFB3
COMP 4
GN
D1
UV/OV6
CT
2Figure 45. Passive RCD Clamp Network
VF
The passive RCD network is the most standard circuitryand the formula below is used to calculate RCLAMP andCCLAMP.
RCLAMP �2 � VCLAMP � �VCLAMP � (VOUT � VF) � N�
LLP � IPEAK2 � FSW
CCLAMP �VCLAMP
VLS � FSW � RCLAMP
(eq. 6)
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The voltage leakage spike (VLS) is usually selected 50 to70% above the reflected value VR = N x (VOUT + VF) and(VIN + VCLAMP) must be below the operating VDRAIN−MAXwhich is 200 V. The diode used for the clamping circuitneeds to be at minimum fast or ultrafast recovery and anMURA110 represents a good choice. One major drawbackof the RCD network lies in its dependency upon the peakcurrent. The worse case occurs when IPEAK and VIN are atthe maximum.
Dz_clampVin
D_Clamp−
+Cin D1
+
Rcl
T1
−
Cvcc
Cout
U?
NCP1032_33
VCC7
VD
RA
IN8
CL 5
VFB3
COMP4
GN
D1
UV/OV6
CT
2
Figure 46. Zener Clamp Network
VF
The zener diode is probably the most expensive but offersthe best protection and a very precise clamping level. Selectthe zener voltage to set VLS level between 10 to 15 V abovethe reflected voltage VR so VZener = VLS + VR. The zenerdiode must be able to handle the voltage rating and powerdissipation during the switch turn−off time. For theNCP1032, a 0.5 W zener diode, like the MMSZ47T1 issuitable.
Thermal ShutdownInternal thermal shutdown circuitry is provided to protect
the integrated circuit in the event that the maximum junctiontemperature is exceeded. When activated at 165°C, thepower switch circuit is disabled. Once the junctiontemperature falls below 145°C, the NCP1032 is allowed toresume normal operation. This feature is provided to preventcatastrophic failures from accidental device overheating. Itis not intended to be used as a substitute for proper heatsinking.
Application Considerations
Typical ApplicationsA 12 V / 3 W bias supply for 36 V to 75 V telecom systems,
1500 V isolation DC−DC converters. The NCP1032 isconfigured in Flyback topology and operates inDiscontinuous Conduction Mode (DCM) to offer alow−cost, high efficiency solution. The circuit schematic isshown in Figure 47. Transformer T1 is available as aCoilCraft B0226−EL. Capacitor CCT sets the switchingfrequency at approximately 300 kHz.
Output voltage regulation and overall efficiency areshown in Figure 3 and Figure 4 on page 6. The resistordivider formed by R3 and R4 sets the undervoltage lockoutthreshold at about 32 V.
Application Note AND8119/D describes the design ofthis bias supply system.
−
+
2.2 �FCin
D2
NRVB0540
R25.1 K
R119.6 K
2.2 �FCvcc
D1
MBR140
22 �FCout
+
Cc100 nF
Rc18 K
Cp 68 pF
R31 M
R432.4
560 pFCct
T1
Lsec
Lpri
Lbias
U1
NCP1032
VCC 7
VD
RA
IN8
CL5
VFB3
COMP4
GN
D1
UV/OV6
CT
2
L1 2.2�H
Cclp
1 nF
MBR1H100
Dclp
Rclp18 k
1000 pFC1
1 nFCuv
−
Figure 47. 48 V to Isolated 12 V / 3 W Bias Supply Schematic
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Layout RecommendationsTo prevent EMI problems high current copper traces
which have high frequency switching should be optimized.Therefore, use short and wide traces for power current pathsand for power ground traces especially transformer traceconnections (primary and secondary). When power istransferred from input to output, there is a period of timewhen the power switch is on, referred to as “on time,” anda period of time when the switch is off, referred to as “offtime.” When the power switch is on, the input voltage isapplied across the primary side of the transformer andcurrent increases in the primary inductance. Further, whenthe power switch is on the output current is supplied from theoutput capacitance. When the power switch is off, current onthe primary side conducts through the clamp or snubbercircuit. On the secondary side current is conducting throughthe rectification diode, providing power to the output andreplenishing energy in the output capacitances as shown inFigure 48. Electromagnetic radiation is minimized bykeeping VDRAIN leads, output diode, and output bypasscapacitor leads as short as possible. It is important tominimize the area of the VDRAIN nodes and used theground plane under the switcher circuitry to preventinterplane coupling and minimize cross−talk to sensitive
signals and ICs. The exposed pad of the package must beconnected to the ground plane of the board which isimportant for EMI and thermal management. Finally, it isalways good practice to keep sensitive traces such asfeedback connection (VFB and COMP) as far away fromswitched signal connections (VDRAIN) as possible.Figure 48 shows an example of an optimized PCB layout.
Thermal ConsiderationsCareful attention must be paid to the internal power
dissipation of the NCP1032. Power dissipation is a functionof efficiency and output power. As output powerrequirements increase, proper component selection includesadjusting RDSON, forward voltage of diodes, and enlargingpackages. For example, if a transformer’s size wereincreased to lower the DCR or/and increase the inductanceefficiency will improve at heavier loads. The exposedthermal pad is designed to be soldered to the ground planeused as a heat sink. The ground plane size should bemaximized and connected to the internal and bottom copperground planes with thermal vias placed directly under thepackage to spread heat generated by the NCP1032 asdepicted Figure 48.
Figure 48. Recommended PCB Layout
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−
+
2.2 �FCin
R220 K
R120 K
D1
MBR140SFT1G
22 �FCout
+
Cc100 nF
Rc18 K
Cp 68 pF
R31 M
R432.4
560 pFCct
Vin 32 to 75 V
LsecLpri
U1
NCP1032
VCC
7
VD
RA
IN8
CL5
VFB3
COMP 4
GN
D1
UV/OV6
CT
2
Cclp
1 nF
MBR1H100SFT3G
Dclp
Rclp18 k
1 nFCuv
− Vout 5.0 V600 mA
D4MMSZ5243BT1G
Q1NSS1C201LT1G
R718 k
T14:1
1.0 �FCvcc
Figure 49. 48 V to 5.0 V DC−DC Converter Without Auxiliary Winding
−
+
2.2 �FCin
R220 K
R120 K
D1
MBR140SFT1G
22 �FCout
+
Cc100 nF
Rc18 K
Cp 68 pF
R31 M
R432.4
560 pFCct
Lpri
Vin 32 to 75 V
Lsec
U1
NCP1032
VCC7
VD
RA
IN8
CL5
VFB3
COMP 4
GN
D1
UV/OV6
CT
2
Cclp
1 nF
MBR1H100SFT3G
Dclp
Rclp18 k
1 nFCuv
− Vout 12.0 V300 mA
T13:1
100 nFCvcc
Figure 50. 48 V to 12.0 V DC−DC Converter Without Auxiliary Winding
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D1
MURA115 COUT22 �F
Cin1 �F
R3294 k�
RCL40.2 k�
CCT
CC 1.5 nF
CP 100 pF
R178.7 k�
NCP1032
VD
RA
IN
VCC
CL
COMP
VFB
GN
D
CT
UV/OV
VIN VOUT
560 �F100 V
50 mA
R410 k�
R22 k�
RC100 k�
Figure 51. Typical Application Circuit Boost Circuit Configuration
ORDERING INFORMATION
Device OV Protection Marking Package Shipping†
NCP1032AMNTXG Enable 1032A WDFN8 3x3(Pb−Free)
3,000 / Tape & Reel
NCP1032BMNTXG Disable 1032B WDFN8 3x3(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
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PACKAGE DIMENSIONS
WDFN8 3x3, 0.65PCASE 511BH
ISSUE O
NOTES:1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: MILLIMETERS.3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.
ÇÇÇÇÇÇÇÇÇÇÇÇ
AD
E
B
C0.10
PIN ONE
2X
REFERENCE
2X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
LD2
E2
C
C0.10
C0.10
C0.08A1
SEATINGPLANE
8X
NOTE 3
b8X
0.10 C
0.05 C
A BB
DIM MIN MAXMILLIMETERS
A 0.70 0.80A1 0.00 0.05
b 0.25 0.35D 3.00 BSCD2 2.20 2.40E 3.00 BSC
E2 1.40 1.60e 0.65 BSC
L 0.20 0.40
1 4
8
*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65PITCH
1.66 3.30
1
DIMENSIONS: MILLIMETERS
0.538X
NOTE 4
0.408X
DETAIL A
A3 0.20 REF
A3
ADETAIL B
L1
DETAIL A
L
ALTERNATECONSTRUCTIONS
ÉÉÉÇÇÇA1
A3
L
ÇÇÇÉÉÉÉÉÉ
DETAIL B
MOLD CMPDEXPOSED Cu
ALTERNATECONSTRUCTIONS
L1 −−− 0.15
OUTLINEPACKAGE
e
RECOMMENDED
K 0.45 REF
5
2.46
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLCreserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for anyparticular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including withoutlimitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applicationsand actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLCdoes not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation wherepersonal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC andits officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufactureof the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NCP1032/D
SENSEFET is a registered trademark of Semiconductor Components Industries, LLC.
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