Nanotechnology and the status of Korea Advanced NanoFabCenter
Transcript of Nanotechnology and the status of Korea Advanced NanoFabCenter
Nanotechnology and the status of
Korea Advanced Nano Fab Center
Apr. 3. 2006
CEO & President of KANC
Joong Won Lee
- The 3rd Korea-US Nano Forum –
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Contents
1. Introduction
2. History
3. Participating Organizations
4. KANC and Gwanggyo Techno Valley
5. FAB Layout and Facility
6. FAB Service
7. Customer Service System
8. Applications
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Introduction
KANC : “Korea Advanced Nano Fab Center”
A non-profit organization supported by Ministry of Science & Technology of Korea
A national infrastructure for the nano technology development in the field of compound semiconductors, non-silicon technology and other emerging technology
1. Supporting universities and research institutes
2. Supporting industries
3. New model of government funded R&D initiatives
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History
Beginning of Construction 2004. 6
Test & Measurement Services Started 2006.2
Incorporated 2003.12
Completion of Clean Room 2005. 12
Official Opening & FAB Service Starts 2006. 4. 26
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Participationg Organization
The Six Consortiums of KANCThe Six Consortiums of KANC
KORE ELECTRONICS TECHNOLOGY INSTITUTEKorea Institute of Science and Technology
Budget of 173 million dollars for 5 years programBudget of 173 million dollars for 5 years program
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KANC Building
FAB Building : 3,500 m2 (37,600 ft2)R&D / Venture Building : 46,650 m2 (502,100 ft2)
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Gwanggyo Techno Valley
R&D Cluster for high technology & business development(30Km south from Seoul)
Korea Advanced Nano Fab Center
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KANC Building
FAB Building : 3,500 m2 (37,600 ft2)R&D / Venture Building : 46,650 m2 (502,100 ft2)
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FAB Layout
One of the largest & the best super clean room facilities in III-V industry: 1 Floor for clean room, Sub FAB for utilities
FoundryLine
Test &MeasurementNano
R&D(class 100)
Epi
CVD Photo &Lithography
(class 1)
RentalAreaEquipment
Development
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Fab Facility
Nano DeviceProcess Fab
(60% of Clean Room Area)
Litho / Pattern Zone
(661m2)
Full Process Zone
(430m2)
Nano R&D Zone(1,124m2)
Test & Measurement Fab
(397m2)
Equipment Development Fab
(331m2)
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FAB Service
Nano Device Process
Epi Service(AdvancedHigh Quality)
ElectronicDevices(MMIC)
Nano CMOSHybridCompoundSemiconductor
Opto-ElectronicDevices(OEIC)
NovelNano Devices
(Nanotubes,Molecular DevicesSpintronics)
R P P F C R F C P F C R P
R C
Equipment Development Test & Measurement
R P
R FCompound Semiconductor (60%)
Non Silicon (10%) Equipments (30%) P C
Research
Process
Foundry Service
Commercialization
Nano Device Process
Epi Service(AdvancedHigh Quality)
ElectronicDevices(MMIC)
Nano CMOSHybridCompoundSemiconductor
Opto-ElectronicDevices(OEIC)
NovelNano Devices
(Nanotubes,Molecular DevicesSpintronics)
R P P F C R F C P F C R P
R C
Equipment Development Test & Measurement
R P
R FCompound Semiconductor (60%)
Non Silicon (10%) Equipments (30%) P C
Research
Process
Foundry Service
Commercialization
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User Friendly “Customer Service System”
Web based on-line booking, scheduling, monitoring, and payment
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E-beam LithoStepper
FIB
MOCVD
Main Equipment
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Fab Facility
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Nanolithography Applications: pHEMT
T-gate of InGaAs pHEMT by50 nm Resolution E-beam Lithography
(Seoul National Univ.)
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Nanolithography Applications: Nano Photonics
Photonic Crystal Waveguide Fabrication byE-beam Writer or FIB Patterning (~200nm)
(Cambridge Univ. & SKKU)
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Nanolithography Applications: Quantum Dots
Quantum Dot Patterning by AIPEL (Atomic Image ProjectionE-beam Lithography)
Si atoms
Resist patterns
1 nm
(Seoul National Univ.)
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Epitaxial Growth Applications: Quantum Dots
(Seoul National Univ.)
Self-assembled Compound Semiconductor Quantum Dots Grown by MOCVD
QD
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Summary
National infrastructure for the nano technology R&D and businesssupport
State-of-the-art facility & equipment
Strong network of academia, industries, and research communities
User friendly service, facility, and location
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KANC would provide the best service for worldwide customers
with the high quality and user friendly operation.
Thank you !!
http://www.kanc.re.kr