N-channel 650 V, 0.014 typ., 130 A, MDmesh V …0.012 0.011 0 40 ID(A) (Ω) 20 60 0.013 VGS=10V 80...
Transcript of N-channel 650 V, 0.014 typ., 130 A, MDmesh V …0.012 0.011 0 40 ID(A) (Ω) 20 60 0.013 VGS=10V 80...
This is information on a product in full production.
January 2013 Doc ID 022826 Rev 4 1/13
13
STY139N65M5
N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh™ V Power MOSFET in Max247 package
Datasheet — production data
Features
■ Max247 worldwide best RDS(on)
■ Higher VDSS rating
■ Higher dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Applications■ Switching applications
DescriptionThe device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Figure 1. Internal schematic diagram
Order codeVDS
@TjMAXRDS(on) max ID
STY139N65M5 710 V 0.017 Ω 130 A
123
Max247
Table 1. Device summary
Order code Marking Package Packaging
STY139N65M5 139N65M5 Max247 Tube
www.st.com
Contents STY139N65M5
2/13 Doc ID 022826 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STY139N65M5 Electrical ratings
Doc ID 022826 Rev 4 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage ± 25 V
ID Drain current (continuous) at TC = 25 °C 130 A
ID Drain current (continuous) at TC = 100 °C 78 A
IDM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 520 A
PTOT Total dissipation at TC = 25 °C 625 W
IARMax current during repetitive or single pulse avalanche (pulse width limited by TJMAX)
17 A
EASSingle pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)2400 mJ
dv/dt(2)
2. ISD ≤ 130 A, di/dt = 400 A/µs, VDD = 400 V, peak VDS < V(BR)DSS.
Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.2 °C/W
Rthj-amb Thermal resistance junction-ambient max 30 °C/W
Tl Maximum lead temperature for soldering purpose 300 °C
Electrical characteristics STY139N65M5
4/13 Doc ID 022826 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage
ID = 1 mA, VGS = 0 650 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 650 VVDS = 650 V, TC=125 °C
10100
µAµA
IGSSGate-body leakagecurrent (VDS = 0)
VGS = ± 25 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)Static drain-source on- resistance
VGS = 10 V, ID = 65 A 0.014 0.017 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitanceReverse transfer capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0-
15600
3659
-
pF
pFpF
Co(tr)(1)
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Equivalent capacitance time related
VGS = 0, VDS = 0 to 520 V - 1559 - pF
Co(er)(2)
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Equivalent capacitance energy related
VGS = 0, VDS = 0 to 520 V - 360 - pF
RGIntrinsic gate resistance
f = 1 MHz open drain - 1.2 - Ω
Qg
Qgs
Qgd
Total gate chargeGate-source chargeGate-drain charge
VDD = 520 V, ID = 65 A,VGS = 10 V(see Figure 15)
-36388
164-
nCnCnC
STY139N65M5 Electrical characteristics
Doc ID 022826 Rev 4 5/13
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(v)
tr(v)
tf(i)tc(off)
Voltage delay time
Voltage rise timeCurrent fall timeCrossing time
VDD = 400 V, ID = 80 A,
RG = 4.7 Ω, VGS = 10 V(see Figure 16)(see Figure 19)
-
295
563784
-
ns
nsnsns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)-
130
520
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 130 A, VGS = 0 - 1.5 V
trrQrr
IRRM
Reverse recovery timeReverse recovery charge
Reverse recovery current
ISD = 130 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 16)-
57015
53
nsµC
A
trrQrr
IRRM
Reverse recovery time
Reverse recovery chargeReverse recovery current
ISD = 130 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C(see Figure 16)
-
720
2468
ns
µCA
Electrical characteristics STY139N65M5
6/13 Doc ID 022826 Rev 4
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
ID
100
10
1
0.10.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
100µs
1ms
10ms
Tj=150°CTc=25°CSingle pulse
AM12612v1
10-4
10-3 10
-210
-1tp(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Single pulse
δ=0.5
Zth=k Rthj-cδ=tp/τ
tp
τ
AM09125v1
ID
150
100
50
00 10 VDS(V)
(A)
5 15
200
250
5V
6V
8V
VGS=10V300
7V
AM08893v2ID
150
100
50
04 VGS(V)6
(A)
3 5 7
200
250
300VDS=30V
8 9
AM08894V2
VDS
-50 0 TJ(°C)
(norm)
-25 7525 50 1000.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
ID = 1mA1.08
AM10399v1RDS(on)
0.012
0.0110 40 ID(A)
(Ω)
20 60
0.013
VGS=10V
80
0.014
0.015
100
0.016
AM12613V1
STY139N65M5 Electrical characteristics
Doc ID 022826 Rev 4 7/13
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Output capacitance stored energy Figure 13. Switching losses vs gate resistance(1)
1. Eon including reverse recovery of a SiC diode.
VGS
6
4
2
00 100 Qg(nC)
(V)
400
8
200 300
10
VDD=520VID=65A12
300
200
100
0
400
500
VDS
(V)VDS
AM12614v1 C
1000
100
10
10.1 10 VDS(V)
(pF)
1
10000
100
Ciss
Coss
Crss
100000
AM12615v1
VGS(th)
1.00
0.90
0.80
0.70-50 0 TJ(°C)
(norm)
-25
1.10
7525 50 100
ID= 250µA
AM08899v1 RDS(on)
1.7
1.3
0.9
0.5-50 0 TJ(°C)
(norm)
-25 7525 50 100
2.1
ID = 65AVGS= 10V
AM08900v1
Eoss
30
20
10
00 100 VDS(V)
(µJ)
400
40
200 300
50
60
500 600
70
AM12616v1E
3000
2000
1000
00 20 RG(Ω)
(μJ)
10 30
4000
5000
6000
40
ID=80AVDD=400VTJ=25°C
Eon
Eoff
7000
8000
AM12617v1
Test circuits STY139N65M5
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3 Test circuits
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
STY139N65M5 Package mechanical data
Doc ID 022826 Rev 4 9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Package mechanical data STY139N65M5
10/13 Doc ID 022826 Rev 4
Table 8. Max247 mechanical data
Dim.mm
Min. Typ. Max.
A 4.70 5.30
A1 2.20 2.60
b 1.00 1.40
b1 2.00 2.40
b2 3.00 3.40
c 0.40 0.80
D 19.70 20.30
e 5.35 5.55
E 15.30 15.90
L 14.20 15.20
L1 3.70 4.30
STY139N65M5 Package mechanical data
Doc ID 022826 Rev 4 11/13
Figure 20. Max247 drawing
0094330_Rev_D
Revision history STY139N65M5
12/13 Doc ID 022826 Rev 4
5 Revision history
Table 9. Document revision history
Date Revision Changes
09-Mar-2012 1 First release.
04-Apr-2012 2Inserted new Section 2.1: Electrical characteristics (curves).Updated Section 4: Package mechanical data.
19-Apr-2012 3Document promoted from preliminary data to production data.Updated Section 4: Package mechanical data.
24-Jan-2013 4– Minor text changes– Modified: IAR EAS values on Table 2
STY139N65M5
Doc ID 022826 Rev 4 13/13
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