This is information on a product in full production.

April 2014 DocID026266 Rev 1 1/14

STP160N4LF6

N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI

DeepGATE™ Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• RDS(on)

* Qg industry benchmark

• Extremely low on-resistance RDS(on)

• Logic level drive

• High avalanche ruggedness

• 100% avalanche tested

Applications• Switching applications

DescriptionThis device is an N-channel Power MOSFET

developed using the 6th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on)

in all packages.

12

3

TAB

TO-220

Order code VDS RDS(on) max ID PTOT

STP160N4LF6 40 V 0.0029 Ω 120 A 150 W

Table 1. Device summary

Order code Marking Package Packaging

STP160N4LF6 160N4LF6 TO-220 Tube

www.st.com

Contents STP160N4LF6

2/14 DocID026266 Rev 1

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

DocID026266 Rev 1 3/14

STP160N4LF6 Electrical ratings

14

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS

Drain-source voltage 40 V

VGS

Gate-source voltage ± 20 V

ID

Drain current (continuous) at TC

= 25 °C 120 A

ID

Drain current (continuous) at TC

= 100 °C 100 A

IDM

(1)

1. Pulse width is limited by safe operating area

Drain current (pulsed) 480 A

PTOT

Total dissipation at TC

= 25 °C 150 W

Derating factor 1 W/°C

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tjmax

)

60 A

EAS

Single pulse avalanche energy 323 mJ

Tstg

Storage temperature

-55 to 175 °C

Tj

Operating junction temperature

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case

Thermal resistance junction-case max 1.0 °C/W

Rthj-a

Thermal resistance junction-ambient max 62.5 °C/W

Electrical characteristics STP160N4LF6

4/14 DocID026266 Rev 1

2 Electrical characteristics

(TCASE

= 25 °C unless otherwise specified).

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS

= 0)

ID

= 250 μA 40 V

IDSS

Zero gate voltage drain

current (VGS

= 0)

VDS

= 20 V

VDS

= 20 V, Tc = 125 °C

1

10

μA

μA

IGSS

Gate body leakage current

(VDS

= 0)

VGS

= ± 20 V ±100 nA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 1 V

RDS(on)

Static drain-source on-

resistance

VGS

= 10 V, ID

= 60 A 0.0022 0.0029 Ω

VGS

= 5 V, ID

= 60 A 0.0024 0.0031 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min Typ. Max. Unit

Ciss

Input capacitance

VDS

= 20 V, f=1 MHz,

VGS

= 0 V

- 8130 - pF

Coss

Output capacitance - 770 - pF

Crss

Reverse transfer

capacitance

- 670 - pF

Qg

Total gate chargeV

DD = 20 V, I

D = 60 A

VGS

= 10 V

(see Figure 14)

- 181 - nC

Qgs

Gate-source charge - 22 - nC

Qgd

Gate-drain charge - 46 - nC

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

Turn-on delay time

VDD

= 20 V, ID

= 60 A,

RG

= 4.7 Ω, VGS

= 10 V

(see Figure 15)

- 20 - ns

tr

Rise time - 131 - ns

td(off)

Turn-off delay time - 205 - ns

tf

Fall time - 116 ns

DocID026266 Rev 1 5/14

STP160N4LF6 Electrical characteristics

14

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

Source-drain current - 120 A

ISDM

(1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) - 480 A

VSD

(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 120 A, VGS

= 0 - 0.97 V

trr

Reverse recovery time ISD

= 120 A,

di/dt = 100 A/μs,

VDD

= 32 V

(see Figure 17)

- 57 ns

Qrr

Reverse recovery charge - 53 nC

IRRM

Reverse recovery current - 1.86 A

Electrical characteristics STP160N4LF6

6/14 DocID026266 Rev 1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

ID

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max R

DS(on)

10ms

1ms

100 µs

Tj=175°CTc=25°CSingle pulse

100

AM15806v1

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

ID

150

100

50

00 0.4 VDS(V)

(A)

0.2

200

VGS= 3 V

VGS= 6, 7, 8, 9, 10 V

250

VGS= 4 V

VGS= 5 V

0.6 0.8

AM15797v1ID

150

100

50

00 2 VGS(V)4

(A)

200

6

VDS= 0.6V

8

250

AM15798v1

VGS

6

4

2

00 50 Qg(nC)

(V)

8

100 150

10

VDD=20V

200

12 ID=60V

AM15799v1RDS(on)

1.9

1.8

1.730 ID(A)

(mΩ)

10 50

2.0

2.1

20 40 60

VGS=10V2.2

70

AM15800v2

DocID026266 Rev 1 7/14

STP160N4LF6 Electrical characteristics

14

Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperature

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

Figure 12. Source-drain diode forward characteristics

C

10000

1000

1000 16 VDS(V)

(pF)

8 24

Ciss

CossCrss

32

AM15801v1 V(BR)DSS

-75 -25 TJ(°C)

(norm)

25 750.92

0.94

0.96

1.02

1.04

1.06

125

0.98

1

1.08

1.1 ID=250 µA

AM15802v1

VGS(th)

0.6

0.4

0.2

0-75 -25 TJ(°C)

(norm)

0.8

25 75 125

ID=250 µA1

1.2

AM15803v1RDS(on)

1

0.5

0-75 -25 TJ(°C)-50 0

1.5

VGS=10V

25 50 75 100

2

(norm)

125 150

AM15804v1

VSD

0 40 ISD(A)

(V)

20 600.5

0.55

0.6

0.65

0.7

0.75

TJ=-55°C

TJ=150°C

TJ=25°C

80

0.8

0.9

0.85

AM15805v1

Test circuits STP160N4LF6

8/14 DocID026266 Rev 1

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

DocID026266 Rev 1 9/14

STP160N4LF6 Test circuits

14

Figure 19. Gate charge waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2 Qgd

Package mechanical data STP160N4LF6

10/14 DocID026266 Rev 1

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

DocID026266 Rev 1 11/14

STP160N4LF6 Package mechanical data

14

Figure 20. TO-220 type A drawing

Package mechanical data STP160N4LF6

12/14 DocID026266 Rev 1

Table 8. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

DocID026266 Rev 1 13/14

STP160N4LF6 Revision history

14

5 Revision history

Table 9. Document revision history

Date Revision Changes

24-Apr-2014 1 First release.

STP160N4LF6

14/14 DocID026266 Rev 1

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