N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE ... · 5.15 5.20 VGS=10V 5.25 AM15959v1...

This is information on a product in full production.

July 2013 DocID024058 Rev 2 1/16

16

STF110N10F7, STP110N10F7

N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Ultra low on-resistance

• 100% avalanche tested

Applications• Switching applications

DescriptionThese devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

TO-220TO-220FP123

123

TAB

Order codes VDS RDS(on) max ID PTOT

STF110N10F7100 V 0.007 Ω

45 A 30 W

STP110N10F7 110 A 150 W

Table 1. Device summary

Order codes Marking Package Packaging

STF110N10F7110N10F7

TO-220FPTube

STP110N10F7 TO-220

www.st.com

http://www.st.com

Contents STF110N10F7, STP110N10F7

2/16 DocID024058 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

DocID024058 Rev 2 3/16

STF110N10F7, STP110N10F7 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol ParameterValue Unit

TO-220FP TO-220

VDS Drain-source voltage 100 V

VGS Gate-source voltage ± 20 V

ID(1)

1. This value is rated according to Rthj-c.

Drain current (continuous) at TC = 25 °C 45 110 A

ID (1) Drain current (continuous) at TC = 100 °C 32 76 A

IDM(2)

2. Limited by safe operating area.

Drain current (pulsed) 180 415 A

PTOT (1) Total dissipation at Tc = 25 °C 30 150 W

EAS(3)

3. Starting TJ=25 °C, ID=18, VDD=50 V.

Single pulse avalanche energy 490 mJ

TJ Operating junction temperature-55 to 175

°C

Tstg Storage temperature °C

Table 3. Thermal resistance

Symbol ParameterValue

UnitTO-220FP TO-220

Rthj-case Thermal resistance junction-case 5.00 1.00 °C/W

Rthj-amb Thermal resistance junction-amb 62.50 °C/W

Electrical characteristics STF110N10F7, STP110N10F7

4/16 DocID024058 Rev 2

2 Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage (VGS= 0)

ID = 250 µA 100 - V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 100 V 1 µA

VDS = 100 V; TC=125 °C 10 µA

IGSSGate body leakage current

(VDS = 0)VGS = 20 V 100 nA

VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2.5 4.5 V

RDS(on)Static drain-source on- resistance

For TO-220FP:VGS= 10 V, ID= 22.5 A

5.1 7 mΩFor TO-220:VGS= 10 V, ID= 55 A

Table 5. Dynamic


Ciss Input capacitance

VDS =50 V, f=1 MHz, VGS=0

- 5117 - pF

Coss Output capacitance - 992 - pF

CrssReverse transfer capacitance

- 39 - pF

Qg Total gate charge VDD=50 V, ID = 110 A

VGS =10 VFigure 17

- 72 - nC

Qgs Gate-source charge - 31 - nC

Qgd Gate-drain charge - 16 - nC

Table 6. Switching times


td(on) Turn-on delay timeVDD=50 V, ID= 55 A, RG=4.7 Ω, VGS= 10 VFigure 16

- 25 - ns

tr Rise time - 36 - ns

td(off) Turn-off delay time - 52 - ns

tf Fall time - 21 - ns

DocID024058 Rev 2 5/16

STF110N10F7, STP110N10F7 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max. Unit

ISD

Source-drain current:

For TO-220FP - 45 A

For TO-220 - 110 A

ISDM(1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed):For TO-220FP - 180 A

For TO-220 - 415 A

VSD(2)

2. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward on voltage

For TO-220FP:ISD = 22.5 A, VGS=0

- 1.2 VFor TO-220:ISD = 55 A, VGS=0

trr Reverse recovery time ISD = 110 A, di/dt = 100 A/µs,

VDD=80 V, Tj=150 °C

- 77 ns

Qrr Reverse recovery charge - 150 nC

IRRM Reverse recovery current - 4.3 A


6/16 DocID024058 Rev 2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP

ID

100

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this a

rea is

Limite

d by max RDS(on)

100µs

1ms

10ms

Tj=175°CTc=25°CSingle pulse

AM15957v1

Single pulse

0.050.020.01

δ=0.5K

10 tp(s)-5 10 -4 10 -3

10 -3

10 -610 -4

10 -2

10 -2

10 -1

Zth_TOFPDEF

Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220

ID

100

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this a

rea is

Limite

d by max RDS(on)

100µs

1ms

10ms

Tj=175°CTc=25°CSingle pulse

AM15958v1

Single pulse

0.050.020.01

δ=0.5K

10 tp(s)-5 10 -4 10 -3

10 -2

10 -610 -3

10 -2 10 -1

Zth_280TOL

Figure 6. Output characteristics Figure 7. Transfer characteristics

ID

300

200

100

00 2 VDS(V)4

(A)

1 3 5

4V

5V

6V

VGS=8, 9, 10V

150

50

250

6

7V

7 8

350

AM15948v1

ID

300

200

100

00 4 VGS(V)8

(A)

2 6

VDS=2V

50

150

250

AM15949v1

DocID024058 Rev 2 7/16

STF110N10F7, STP110N10F7 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance for TO-220FP

VGS

6

4

2

00 Qg(nC)

(V)

40

8

20

10

VDD=50VID=110A12

60 80

AM15950v1RDS(on)

5.10

5.05

5.00

4.955 15 ID(A)

(mΩ)

25 35

5.15

5.20

VGS=10V5.25

AM15959v1

Figure 10. Static drain-source on-resistance for TO-220

Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage vs temperature

Figure 13. Normalized on-resistance vs temperature

RDS(on)

5.2

5.1

5.0

4.90 20 ID(A)

(mΩ)

40 60

5.3VGS=10V

80 100

AM15960v1 C

3000

2000

1000

00 20 VDS(V)

(pF)

10

4000

30

Ciss

CossCrss

40 50 60 70 80

5000

6000

AM15952v1

VGS(th)

0.7

0.6

0.5

0.4-75 0 TJ(°C)

(norm)

-50

0.8

7525 50

ID=250µA

-25 125 150

0.9

1

1.1

1.2

100

AM015953v1 RDS(on)

1.6

1.4

0.8

0.4TJ(°C)

(norm)

0.6

1.2

1

1.8

ID=55A

-75 0-50 7525 50-25 125 150

2

100

AM15954v1


8/16 DocID024058 Rev 2

Figure 14. Normalized BVDSS vs temperature Figure 15. Source-drain diode forward vs temperature

V(BR)DSS

TJ(°C)

(norm)

0.94

0.96

0.98

1.00

1.02

1.04

ID=250µA

-75 0-50 7525 50-25 125 150100

AM15955v1VSD

0 40 ISD(A)

(V)

20 10060 800.5

0.6

0.7

0.8

TJ=-55°C

TJ=175°C

TJ=25°C

0.9

1

1.1

AM15956v1

DocID024058 Rev 2 9/16

STF110N10F7, STP110N10F7 Test circuits

3 Test circuits

Figure 16. Switching times test circuit for resistive load

Figure 17. Gate charge test circuit

Figure 18. Test circuit for inductive load switching and diode recovery times

Figure 19. Unclamped inductive load test circuit

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Package mechanical data STF110N10F7, STP110N10F7

10/16 DocID024058 Rev 2

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

http://www.st.com

DocID024058 Rev 2 11/16

STF110N10F7, STP110N10F7 Package mechanical data

Table 8. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2


12/16 DocID024058 Rev 2

Figure 22. TO-220FP drawing

7012510_Rev_K_B

DocID024058 Rev 2 13/16

STF110N10F7, STP110N10F7 Package mechanical data

Table 9. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95


14/16 DocID024058 Rev 2

Figure 23. TO-220 type A drawing

DocID024058 Rev 2 15/16

STF110N10F7, STP110N10F7 Revision history

5 Revision history

Table 10. Document revision history

Date Revision Changes

03-Dec-2012 1 Initial release.

16-Jul-2013 2

– Part numbers (STF45N10F7 and STH110N10F7-2) have been moved to two separate datasheets

– Modified: title, IDM value for TO-220– Added: EAS

– Modified: the entire typical values in Table 5 and 6

– Modified: typical and max values in Table 7– Modified: Figure 16, 17, 18, 19, Table 9 and Figure 23– Minor text changes

STF110N10F7, STP110N10F7

16/16 DocID024058 Rev 2

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N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE ... · 5.15 5.20 VGS=10V 5.25 AM15959v1...

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