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IF/RF MICROWAVE COMPONENTSISO 9001 ISO 14001 AS 9100P.O.Box 350166, Brooklyn, New York 11235-0003(718) 934-4500Fax (718) 332-4661U.S. Patents 7739260, 7761442448 rev HPOWERSPLITTERSCOMBINERS as low as79from 2 kHz to18 GHzNOW!The Industrys Largest Selection includes THOUSANDS of models, from 2 kHz to 18 GHz, at up to 300 watts power, and in coaxial, flat-pack, and surface-mount housings for 50 and 75systems.From 2-way through 48-way designs, with 0, 90, or 180 phase configurations, Mini-Circuits power splitters/combinersoffer outstanding performance for insertion loss, isolation, and VSWR. Decades of experience with multiple technologies make it all possible, from core & wire, microstrip, and stripline, to semiconductors and LTCC ceramics.Get easy-to-find, detailed data and performance curves, S-parameters, outline drawings, PCB layouts, and everything else you need to make a decision quickly, at minicircuits.com. Just enter your requirements, and our patented search engine, Yoni 2, searches actual test data to find the models that meet your needs.All Mini-Circuits catalog models are in stock, continuously replenished, and backed by our 1-year guarantee. We even list current stock quantities and real-time availability, as well as pricing, to help our customers plan ahead and make quick decisions. So why wait? Take a look at minicircuits.com today! o SCOMPLI ANTRoHS Compliant Product availability is listed on our website. pwrSplitsprd448revG.indd 1 10/26/11 5:16 PM MC_F448revG1111 REVISED.indd 5 3/28/12 1:50 PMMWJWIN_TECHNOLOGY1011.indd 6 3/28/12 1:50 PMMWJK&L0911.indd 7 3/28/12 1:50 PMFREQUENCY GAIN NOISE NOMINAL PEAKMODEL RANGE GAIN FLATNESS FIGURE VSWR P1dB Psat CURRENT @ 30VNUMBER (GHz) (dB, Min.) (dB, Max.) (dB, Max.)IN/OUT (dBm, Min.) (dBm, Min.) (mA)AMFG-3F-00030100-60-33P 0.03-1 42 1.5 6 2:2 34 36 750*AMFG-3F-00030300-60-33P 0.03-3 40 2 6 2:2.2 33 35.5 750*AMFG-3F-00030400-60-32P 0.03-4 40 2 6 2:2 32 35 750*AMFG-3F-00040250-60-33P 0.04-2.5 40 2 6 2:2.2 33 35.5 670AMFG-3F-00050100-50-34P 0.5-1 40 1.5 5 1.8:1.8 34 37 750*AMFG-3F-00230025-30-37P 0.23-0.25 50 1 3 1.5:2 37 40 250*AMFG-3F-00500350-60-32P 0.5-0.35 40 1.75 6 2:2.2 33 35 600*AMFG-3F-00700380-60-35P 0.7-3.8 40 2 6 2.5:2.5 35 39 1500AMFG-3F-00800220-60-35P 0.8-2.2 40 1.5 6 2:2 35 38 900*AMFG-2F-01000300-60-35P 1-3 40 2 6 2:2.2 35 39 1500AMFG-2F-01000200-60-38P 1-2 35 2 6 2:2 36 37 1500Notes: Psat is defined as the output power where a minimum of 3 dB gain compression takes place.Higher power available, please contact MITEQ.* 12V version available.100 Davids Drive Hauppauge, NY 11788TEL.: (631) 436-7400 FAX: (631) 436-7430www.miteq.com100 Davids Drive Hauppauge, NY 11788TEL.: (631) 436-7400 FAX: (631) 436-7430www.miteq.comAD 582_7.75x10.75:Layout 110/18/114:17 PMPage 1MWJSUPP_MITEQ1111.indd 8 3/28/12 1:51 PMUnder powered and over budget? 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Visit our website or call 888-641-7364.www.aeroflex.com/metelicsPart Number ConfigurationDrive Voltage*RecommendedSwitch DriverFrequency Band(MHz)MSW2000200 T-R Switch, TX Left +V Only MPD2T28125-700 10 to 1,000MSW2001200 T-R Switch, TX Left +V Only MPD2T28125-700 400 to 4,000MSW2002200 T-R Switch, TX Left +V Only MPD2T28125-700 2,000 to 6,000 MSW2022-200 T-R Switch, TX Right +V & -V MPD2T5N200-702 2,000 to 6,000 MSW2050205 T-R Switch, TX Left +V Only MPD2T28125-700 20 to1,000MSW2051205 T-R Switch, TX Left +V Only MPD2T28125-700 400 to 4,000MSW2030203 Symmetrical SP2T +V Only MPD2T28125-700 10 to 1,000MSW2031203 Symmetrical SP2T +V Only MPD2T28125-700 400 to 4,000MSW2032203Symmetrical SP2T +V Only MPD2T28125-700 2,000 to 6,000MSW2040204 Symmetrical SP2T +V Only MPD2T28125-700 50 to 1,000MSW2041204 Symmetrical SP2T +V Only MPD2T28125-700 400 to4,000MSW2060-206 Symmetrical SP2T +V & -V MPD2T5N200-702 10 to 1,000MSW2061-206 Symmetrical SP2T +V & -V MPD2T5N200-702 400 to 4,000MSW2062-206 Symmetrical SP2T +V & -V MPD2T5N200-702 2,000 to 6,000MSW3100310 Symmetrical SP3T +V Only MPD3T28125-701 10 to 1,000MSW3101310 Symmetrical SP3T +V Only MPD3T28125-701 400 to 4,000MSW3200-320 Symmetrical SP3T +V & -V MPD2T5N200-703 10 to 1,000MSW3201-320 Symmetrical SP3T +V & -V MPD2T5N200-703 400 to 4,000PIN Diode Switch and Driver Combinations* +V Only = Up to +28V and +125V +V & -V = Up to +5V and -200VEval Boards Available From StockBuy Online atAeroflex.com/MSWMWJAEROFLEX_SOLVED1011.indd 9 3/28/12 1:51 PMAPRIL 2012VOL. 55 NO. 4FeaturesC O V E R F E A T U R E22Architecture and Amplifer Device Developments in CATV NetworksEric Higham, Strategy AnalyticsExplores the CATV industry as it is undergoing dramatic upgrades in capabilities, and how developments in amplifer technology will address future needsM V P : M O S T V A L U A B L E P R O D U C T38I/Q Demodulator Eases Bandwidth ConstraintsLinear Technology Corp. A new wide bandwidth zero-IF I/Q demodulator addresses dynamic range and bandwidth shortcomings of traditional designsP E R S P E C T I V E443G Power Amplifers: Moving from GaAs to CMOSJavelin SemiconductorRobert Wagner, director of marketing, provides a commentary on how 3G CMOS PAs are outperforming traditional GaAs handset modulesS P E C I A L R E P O R T S50MIMO.... and All That JazzDavid Vye, Microwave Journal Editor Explores the upcoming CTIA show and highlights the RF/Microwave Zone and Expert Panels on LTE MIMO OTAtesting issues72Being Seventy-Five Still Young: The Doherty Power AmpliferR. Giofr, L. Piazzon, P. Colantonio and F. Giannini, University of Tor VergataExplores the evolution of the Doherty power amplifer through its frst seventy-fve years and explains how this architecture has adapted, and is being utilized to realize todays advanced power amplifer stages for wireless systemsT E C H N I C A L F E A T U R E S90Compact Microstrip Lowpass Filter with Wide Stopband and High AttenuationMohsen Hayati, Sohrab Majidifar and Omid Sadeghi Fathabadi, Razi UniversityFeatures a compact microstrip lowpass flter with a 3 dB cutoff frequency of 2.07 GHz that has been designed,fabricated and measuredMicrowave Journal (USPS 396-250) (ISSN 0192-6225) is published monthly by Horizon House Publications Inc., 685 Canton St., Norwood, MA 02062. Periodicals postage paid at Norwood, MA 02062 and additional mailing offces.Photocopy Rights: Permission to photocopy for internal or personal use, or the internal or personal use of specifc clients, is granted by Microwave Journal for users through Copyright Clearance Center provided that the base fee of $5.00 per copy of the article, plus $1.00 per page, is paid directly to the Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923 USA (978) 750-8400. For government and/or educational classroom use, the Copyright Clearance Center should be contacted. The rate for this use is 0.03 cents per page. Please specify ISSN 0192-6225 Microwave Journal International. Microwave Journal can also be purchased on 35 mm flm from University Microflms, Periodic Entry Department, 300 N. Zeeb Rd., Ann Arbor, MI 48106 (313) 761-4700. Reprints: For requests of 100 or more reprints, contact Barbara Walsh at (781) 769-9750. POSTMASTER: Send address corrections to Microwave Journal, PO Box 3256, Northbrook, IL 60065-3256 or e-mail mwj@omeda.com. Subscription information: (847) 291-5216. This journal is issued without charge upon written request to qualifed persons working in the RF & microwave industry. Other subscriptions are: domestic, $120.00 per year, two-year subscriptions, $185.00; foreign, $200.00 per year, two-year subscriptions, $370.00; back issues (if available) and single copies, $10.00 domestic and $20.00 foreign. Claims formissing issues must be fled within 90 days of date of issue for complimentary replacement. 2012 by Horizon House Publications Inc.Posted under Canadian international publications mail agreement #PM4061260855 Yearsof Publishing Excellence10 MICROWAVE JOURNAL n APRIL 2012_4M04 FINAL.indd 10 3/30/12 8:15 AMA high performance signal analyzer ready to take you into the wireless future.Wireless technology never stops moving forward. Success depends on your ability to evolve. The Agilent PXA signal analyzer helps you keep ahead by maximizing exibility, scalability and longevity so you can drive your evolution.Thats thinking ahead.Thats Agilent.PXA Signal Analyzer (N9030A)160 MHz analysis bandwidthUp to -88 dBc 3GPP ACLR dynamic rangeLTE and HSPA+; just two of over 25 measurement apps.LTE-Advanced and 802.11ac with 89600 VSA softwareu.s. 1-800-829-4444 canada 1-877-894-4414Scan or visit http://goo.gl/c5PjF for videos on optimized signal analysisGet the new 802.11ac app noteRequest your wireless standards posterwww.agilent.com/nd/PXA160 2011 Agilent Technologies, Inc.MWJSUPP_AGILENT1111.indd 11 3/30/12 8:03 AM017......Mark.Your.Calendar018......Coming.Events055......Defense.News059......International.Report063......Commercial.Market066......Around.the.Circuit128......Catalog.Update132......New.Products142......The.Book.End144......Ad.Index144......Sales.Reps146......MWJ.Puzzler12 MICROWAVE JOURNAL n APRIL 2012STAFFPublisher:Carl Sheffres editor:David VyeManaging editor:Jennifer DiMarcotechnical editor:Patrick Hindleassociate technical editor:Dan Massstaff editor: Laura Casasantoeditorial assistant:Barbara Walshconsulting editor:Harlan Howe, Jr.consulting editor:Frank Bashoreconsulting editor:Peter Staeckerconsulting editor:Dan SwansonWeb editor:Chris Stanfaaudience develoPMent Manager:Michelle Barrytraffic Manager:Edward KiesslingMarketing and event coordinator: Kristen Andersondirector of Production & distribution: Robert Basslead designer & Production coordinator:Janice LevensongraPhic designer:Sachiko StiglitzeuroPeinternational editor:Richard Mumfordoffice Manager:Nina PlesucorPoratestaffceo:William M. BazzyPresident:Ivar Bazzyvice President:Jared Bazzyeditorial revieW boardDr. I.J. BahlF.M. BashoreDr. C.R. BoydM. GoldfarbJ.L. HeatonDr. G. HeiterH. Howe, Jr.Dr. T. ItohDr. J. LaskerDr. S. MaasDr. G.L. MatthaeiDr. D.N. McQuiddyDr. J.M. OsepchukDr. J. RautioDr. U. RohdeM. SchindlerDr. P. StaeckerF. SullivanD. SwansonDr. R.J. TrewG.D. VendelinProf. K. Wuexecutive editorial office:685 Canton Street, Norwood, MA 02062Tel: (781) 769-9750FAX: (781) 769-5037e-mail: mwj@mwjournal.comeuroPean editorial office:16 Sussex Street, London SW1V 4RW, EnglandTel: Editorial: +44 207 596 8730Sales: +44 207 596 8740FAX: +44 207 596 8749www.mwjournal.comPrinted in the USAFeatures100Integrated SAW Broadband Antenna for WLAN/WiMAX I-Tseng Tang, National University of Tainan Details a compact integrated SAW antenna with broadband performance designed and fabricated on a piezoelectric substrate, using photolithography and evaporation techniquesP R O D U C T F E A T U R E s106Pulsed IV, Pulsed S-Parameters and Compact Transistor ModelsMaury MicrowaveIntroduction to the BILT/IVCAD Pulsed IV, Pulsed S-Parameter andCompact Transistor Modeling system that allows characterization and modeling of GaN FETs 112Ultra Low-Noise Crystal OscillatorsSynergy Microwave Corp. (Research GmbH)Introduction to the LNXO-series that is available with standard frequencies and packages with good phase noise performance, yet without the need for special quartz-selection116 s124Monitor RF Power Anywhere in the WorldAnritsu126Five-in-One Wireless Connectivity SolutionsTexas InstrumentsDepartments_4M04 FINAL.indd 12 3/30/12 8:15 AMAchievehyper speedsimulations on complex multi-tone circuits MICROWAVE OFFICEStop waiting and waiting and waiting for your complex multi-tone designsto simulate. AWR users dont wait. They simulate at turbo speeds thanks to multi-rate harmonic balance (MRHB) technology. With simulation times that are typically 10x faster, designs with 2, 3, 4 or even more tones converge quickly and nail the performance, too! Fewer mouse clicks and novel MRHB technology mean shorter process times, right-the-rst-time designs, and less stress for you. Dont you deserve that? Grab a test copy at awrcorp.com/MWO.Stop waiting and start designingMWJAWR0412.indd 13 3/28/12 1:51 PMOnlineFree WebinarsInnovations in EDA by: Agilent TechnologiesFast Characterization ofPower Amplier PerformanceAvailable On DemandAgilent in Aerospace/Defense SeriesFast and Accurate Frequency Converter Characterization 4/19/12 at 1:00 PM ETAgilent in Signal Generation and AnalysisMulti-Signal, Multi-Format Analysis with the 89600 VSA 4/25/12 at 1:00 PM ETInnovations in LTE Seriesby: Agilent TechnologiesOptimize UE Design for GreaterBattery Run-Time4/26/12 at 1:00 PM ETTechnical Education SeriesRadar Fundamentals4/24/12 at 11:00 AM ETSponsored by: TektronixWeb SurveyI cant livewithout you...Whats the most important tool in your design arsenal?Look for our multiple choice survey online at mwjournal.comExecutive InterviewUlrich Rohde, Founder and Chairman of Synergy Microwave, talks about his life in microwave engineering, the importance of phase noise and his companys work in advancing the state-of-the-art in oscillator technology.Improving Measurement Accuracy for High Frequency RF Connectors Ronnie Rice, RF IndustriesHigh Temperature, High Power RF Life Testing of GaN on SiC RF Power TransistorsBrian Barr and Dan Burkhard, M/A-COM Technology SolutionsPresented by: Richardson RFPDSolutions for Testing Very High Throughput 802.11ac SignalsWhite Paper, Agilent TechnologiesVoice and SMS in LTEWhite Paper, Rohde & SchwarzThe Advantages of Outsourcing your RF/Microwave Assembly to an Onshore ContractorWhite Paper, SemiGenWhite Papers14 MICROWAVE JOURNAL APRIL 2012LinkedInRF & Microwave CommunityCongratulations to our10,000th member!CommunityWatchHarmonic Load Pull [84 votes] (13%)Non-linear Device Models [33 votes] (5%)S-parameters [75 votes] (11%)X-parameters [14 votes] (2%)Cripps Method [461 votes] (69%)Alan SeahManaging Director, Rohde & Schwarz, Malaysia@visit us mwjournal.comFebruary SurveyHow do you determineload impedance?_4M04 FINAL.indd 14 3/30/12 8:15 AM Info & Free SamplesThe New Low in Frequency Synthesis FeaturesLow Noise and Spurious Levels, 375MHz to 6GHz Frequency SynthesizersOur new ultralow noise, integer-N frequency synthesizers provide best-in-class phase noise and spurious performance.The LTC6945 is a low noise, low 1/f corner PLL core for use with an external VCO while the LTC6946 is a completefrequency synthesizer including a low phase noise VCO. The free, easy-to-use PLLWizardTM CAD tool quickly and accuratelysimulates synthesizer performance to ensure an optimal design. So, creating low noise designs without performance compromises is done without losing sleep. Low 226dBc/Hz Normalized In-BandPhase Noise Floor Industrys Lowest In-Band 1/f NoiseCorner Spurious Levels Learn more at ni.com/redene800 813 5078 2012 National Instruments. All rights reserved. LabVIEW, National Instruments, NI, and ni.com are trademarks of National Instruments. Other product and company names listed are trademarks or trade names of their respective companies.WIRELESS TECHNOLOGIESNational Instruments supports a broad range of wireless standards including:LTE802.11a/b/g/n/acWCDMA/HSPA/HSPA+GSM/EDGECDMA2000/EV-DOBluetoothRedening RF andMicrowave Instrumentationwith open software and modular hardwareMWJNI0411.indd 33 3/28/12 1:54 PM34 MICROWAVE JOURNAL APRIL 2012Cover FeatureWe v e c o n d e n s e da l l t h e p o w e r , p e r f o r m a n c ea n d f u n c t i o n o fo u r r a c k - m o u n t e da m p l i f i e r s y s t e m si n t o a h i g h l yc o mp a c t p a c k a g e105 Baylis Road, Melville, NY 11747 Tel: (631) 777-8900Fax: (631) 777-8877 www.comtechpst.comComtech, the industrys leader for solid state, broadband, high power amplifer systems, ofers a new line of compact integrated systems for frequencies up to 6 GHz and beyond. These systems combine RF and microwave components, such as LNAs, High Power Switches, Limiters, Directional Couplers, and Detectors, into a highly compact package. These units can be confgured to your exact needs and are ideally suited for many defense applications. Contact us today with your requirements and specs...well meet your needs and exceed your expectations.Comtech...Simply More.Model BME25869-352500-6000MHz35 Watt Power Amplifer SystemCOM28510NewTechAdMJIsHlf.indd 1 8/18/10 11:15 AMpotential for lower cost devices. There are GaN-on-Si devices for other mar-ket applications and development ac-tivity for RF applications, but the vast majorityofdevicescurrentlyusedin CATVapplicationsareGaN-on-SiC. With pricing pressure as the driver, it will be interesting to see how the two processing methods evolve.GaN activity for CATV applications issubstantial,asrecentannounce-mentsillustrate.RFMDbeganpre-productionshipmentsofGaN-based CATVhybridampliersattheend of2009.Theyanticipaterevenueof $4to$5millionfromGaN-based ampliersforCATVapplicationsin 2012 and they expect this will double in2013.Theseapplicationstypically consist of power doubler devices that useGaAsPHEMTdriversandGaN HEMToutputstages.Nitronexhas revealedshipmentsofmorethan 200,000GaNamplierstoaU.S.-basedCATVampliersupplierand, in August 2011, Anadigics announced that they had incorporated GaN into theirsurface-mountCATVlineam-plier portfolio.Figure5revisitstheCATVam-pliermarketrevenuesegmentation, with GaN added. As the chart shows, StrategyAnalyticsestimatesship-ments of GaN-based ampliers began in2010andtheywillcapturemarket shareveryquickly.Weforecastthe marketvaluewillgrowwithaCom-poundAverageAnnualGrowthRate (CAAGR) in excess of 150 percent to reach nearly $25 million in revenue by 2015.CONCLUSIONThisisanexcitingtimeinthe CATVindustryforconsumers,opera-tors,equipmentsuppliersanddevice manufacturers.Anindustrythathad seenlittlechangeinitsrst60years isundergoingadramaticupgradein capability,inresponsetotheexplo-sionofvideoconsumption.Services likedigitalTV,HDTV,3DTV,video-on-demand, pay per view and targeted programmingarebeingembracedby consumers.Thebandwidthandtech-nologyrequirementstomeetthese consumerdemandsaredrivingnew networkarchitecturesandcompound semiconductortechnologies,mostno-tably GaN, are enabling these new ar-chitectures. thankstoitsrelativelycloselattice matchtoGaNanditsexcellentther-mal conductivity properties. While ma-terialandprocessimprovementshave helped with the quality of SiC wafers, it remains a difcult and expensive mate-rial to produce.Recently,high-resistivitysilicon hasbecomeaviablealternativeto SiCforcertainGaNapplications.Al-thoughthelatticematchwithGaN and the thermal properties are not as goodasSiC,silicondoesprovidethe GaNclaimthispricepremiumdoes notreectthetruecostdifferential and is not sustainable.A big cost element is the lack of suit-ablenativeGaNsubstratesonwhich togrowlattice-matched,defect-free epilayersanalogoustoGaAsorsilicon transistorfabrication.Intheabsence of production-scale, single-crystal GaN wafers,manufacturersmustinstead use foreign host materials such as sap-phire, SiC or silicon. SiC has been the material of choice for RF applications, _4M27 FINAL.indd 34 3/30/12 8:16 AMNothing But Up TimeBonding Sources consistent product delivers a consistent result.We have served over 700 customers since 2006 and shipped over 750,000 epoxy pre-forms worldwide. 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Our laser engineer provides layout support and design guidelines for all types of epoxy pre-forms.www. bondingsource.comMWJBONDING0212.indd 35 3/28/12 1:54 PMMILMEGA Limited Park Road,Ryde,Isle of Wight,PO33 2BEUnited KingdomTel. +44 (0) 1983 618004 Fax. +44 (0) 1983 811521 sales@milmega.co.uk www.milmega.co.ukDesigners and Manufacturers of High Power Microwave and RF Ampliers1994In 1994, the MILMEGAdesign team turned itsexperience gained on solidstate radar transmitters tothe problem of replacingtravelling wave tube ampli-fiers, at lower microwavefrequencies, with a solidstate equivalent.Our first 1 to 2GHz product was conceived and,with it, the concept of the corporate structureamplifier (CSA) was introduced to the EMC testcommunity. The building blocks were then laidfor the quality, reliability and ownership benefitsthat the CSA architecture would translate, to forMILMEGAs future customer community. Ourcompetition believed it to be a costly andinflexible method of amplifier implementation.It would take 10 to 15 years before they toobegan to adopt this flexible architecture withcustomer benefits.2003In 2003, following input fromusers within the automotiveEMC market,MILMEGAdeveloped the dual bandconcept. Its fundamentalgoal was to ensure thatcustomers paid only for thepower they required and notthe power competitive product forced on themthrough ineffective power architecture choice.While competitors seemed obsessed withdemonstrating how clever they were technically,MILMEGAs obsession was with providing qualityproduct, effectively targeted at customers testrequirements and their limited budgets. The dualband concept was simple two independent am-plifiers, each covering its own specific frequencyband, switched at the appropriate point in a testcycle. The upper frequency band amplifier had itspower tailored by the fact that the gain of testantennae increased with frequency, requiring lessamplifier power to be applied at these higherfrequencies. When first introduced the conceptdelivered up to a $150,000 saving when comparedagainst competitor solutions. The customer com-munity loved it. The competitor community hatedit, some even writing application notes as to whydual band amplifiers would never catch on. Nineyears later those application notes have beenwithdrawn and competitors have their own dualband offerings. One or two have even borrowedand modified our slogan from our early adverts.So... Wheresthe rest of it?Nearly Half The Size And Half The Weight... Yet More Guaranteed Power MILMEGA Limited Ryde Bus|ness Park,N|cho|son Road,Ryde,ls|e of W|ght,PO33 1BOn|ted K|ngdomTel. +44 (0} 1983 618004 Fax. +44 (0} 1983 811521 sa|es@m||mega.co.uk www.m||mega.co.ukDesigners and Manufacturers of HighPower M|crowave and RF Amp||fers*AR 200S1G4AP1dB 160W min Weight 172kg P1dB 191W min Weight 87kgMILMEGA AS0840-200/200Height 13uHeight 25u

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m o d g n |k u2005In 2005, MILMEGA intro-duced a concept to thecustomer community, whichhas never been formallymatched by our competitors despite them having 7years to catch up. It was thefully expensed, 5 yearwarranty. All MILMEGAcustomers benefit from the reliability and qualitypedigree inherent in all our products. Our cus-tomer service levels reflect the customer focusmindset that drives our operations. It was our be-lief that our customers should bear no additionalcosts if a MILMEGA amplifier failed within 5 yearsof ownership no shipping costs, no labour costs,no component costs. So, in 2005, we introducedour simple 5 year warranty no slippery caveats,no additional service contracts / insurance topurchase, just a plain and simple promise that inthe first 5 years of ownership, if you have aproblem, you pay no costs of repair. Our competi-tors called it financial madness, we called itcustomer service. Seven years on the competitionare still shaking their collective heads (servicerevenue is valuable to them) and have made noeffort to match our unique quality statement.Our 5 year warranty remains unique and, as aquality statement, it is unrivalled.5The unique MILMEGA5 Year WarrantySetting a New Standardfor Customer ServiceNo hidden costs, no additional service contracts to purchase, no pressure to buy a replacement -just 5 years peace of mind and a simple promise to deliver the type of service you deserve.Add to th|s the benefts of our unr|va||ed upgradeab|e topo|ogy, c|ass |ead|ng power dens|ty andan env|ab|e reputat|on for go|ng the extra m||e for our customers and |t becomes c|ear whyMl|MEGA |s the preferred cho|ce for so||d state power amp||fers.F|nd out more by contact|ng Ml|MEGA, or v|s|t m||mega.co.uk for more |nformat|on.MILMEGA Limited Park Road,Ryde,ls|e of W|ght,PO33 2BEn|ted K|ngdomTel. +44 (0} 1983 618004 Fax. +44 (0} 1983 811521 sa|es@m||mega.co.uk www.m||mega.co.uk48 Hour Factory TurnaroundNo Shipment costsNo Labour costsNo Parts costsNo SweatBeneft ChecklistDes|gners and Manufacturers of H|ghPower M|crowave and RF Amp||fers2008Since early 2002 MILMEGAwere experimenting withprototype versions of wideband gap power devices,driven by a keen understand-ing that these devices, whenmature, would change thedesign landscape of amplifierdesign.Our focus was on theuse of this technology inmulti-octave band commercial amplifiers and notthe narrow band application that the technologywas derived for. IN 2008, after significant researchand development, MILMEGA introduced the firstcommercially available multi-octave band SiliconCarbide,1000W amplifier operating over the200MHz to 1000MHz band. It was up a thirdsmaller than competitive product. In 2011 weintroduced a GaN 80MHz to 1000MHz product.The 1000W product is up to 3 times smaller thanrival product and does not require the additionaloverhead of an air-conditioned room to operate in.With 10 years experience in designing with wideband gap devices, we remain well placed to buildon the exciting future opportunities of thistechnology. Our competitors have yet to matchthis significant design and market achievement.Oops...weve done it again!Oont|nu|ng Amp||fer lnnovat|on From Ml|MEGA For fu|| amp||fer spec|fcat|on, p|ease v|s|t our webs|te www.m||mega.co.ukMl|MEGA ||m|ted Park Road,Ryde,ls|e of W|ght,PO33 2BEn|ted K|ngdomTel. +44 (0} 1983 618004 Fax. +44 (0} 1983 811521 sa|es@m||mega.co.uk www.m||mega.co.ukDes|gners and Manufacturers of H|gh PowerM|crowave and RF Amp||fersOops... Oo Oops... s ps... weve done it again! eve done it again!O d d done it again! done it again!O p Oops... e it again!it again!it again!it again! e it again!ps... a aaga in in! aN transistor technology GaN transistor technologyp exceptional,rfor nsistor technology c nsistor technologyp o oven,r pr ptional, o logyreliability r prehensive Compre for ease of r suite for ease of rCable fr e hensivem communications ote interfacing emote interfacingof rease of ree eemotherboar RF motherboar communications emote interfacingd RF motherboar year 5 year fully expensed warranty y expensed warranty ully expensed warranty fully expensed warranty t n o O g n | u n | to r F p m A gl M m o n l r e f | | pG E M | t a v o n nA G n o | t w e n e h Tm p o | e v e dn a r t N a G o r F5 2 - 0 0 0 1 F R 0 8 wh w g n | r u d t n e mo | o n h c e t r o t s | s n l M m oh t s | r e f | | p m a 0E M | l M e m | t h c |a p o | e v e d o t y g G E M |e v o f o t | u s e r e hs e n r a h s a h A G Ex e h t | w t c u d o r p a A Gg | s e d s r a e y 3 r er e p o r p e h t d e s sb a | | e r | a n o | t p e c x d n a n gf o s e | t ry t | | | b n a r t N a Gr e t t e b t As u d n | e h tu p e r r | e h ty t | | a u q a o | o n h c e t r o t s | s ns e h t f | a h n a h t re y | | u f y | n o s ` y r t sg n | o g r o f n o | t a t uo c y t | | | b a | | e r d n a a p o | e v e d o t y gt h g | e w d n a e z | sr a e y 5 d e s n e p x ee | | m a r t x e e h t g| p s a s r o t | t e p m o x e h t | w t c u d o r p at e p m o c e h t f o tM | l M , y t n a r r a w rt a h w r e v | | e d o t. o t e r b a | | e r | a n o | t p e c xk c a b d n a , n o | t | tn e r e h t r u f A G E Mn a w s r e m o t s u c . y t | | | by b d e ke c n a h nh t | w , t n y qa | | u f r o FD yc f | c e p s r e f | | p m aa M d n a s r e n g | s e D p pv e s a e | p , n o | t a cH f o s r e r u t c a f u n a e t | s b e w r u o t | s |r e w o P h g | H a g e m | | m . w w w k u . o c . l Mel. TTe } 0 ( 4 4 + Md e t | m | | A G E M | a P4 0 0 8 1 6 3 8 9 1 . x a F Fe | s l , e d y R , d a o R k r a. 2 5 1 1 8 3 8 9 1 } 0 ( 4 4 +R d n a e v a w o r c | sB 2 3 3 O P , t h g | W f o e. a g e m | | m @ s e | a s 1 2r e f | | p m A F m o d g n | K d e t | n E Bk u . o c g e m | | m . w w w k u . o c . a g2011In 2011 we introduced ournew 80MHz to 1000MHz,1000W concept. Building onour modular concept from1994 and our discussionswith the EMC communityit was a triumph of theextraordinary over the ordi-nary. Maximising asset use, extreme portability,the absence of a requirement for expensivesupport infrastructure, modular to its core and ourunique (still unique after 7 years) 5 year warranty. Itsummarises our journey since 1994 customerfocussed, application efficient and a willingness totake technology risks rather than stand still. Weremain the benchmark that competitors look toand subsequentlyemulate.2000In 2000, MILMEGA intro-duced the concept of theamplifier power and fre-quency upgrade to the EMCand wireless communicationtest communities. Based onthe modular architecture ofthe MILMEGA product, theupgrade philosophy allowedcost effective power upgrades within the samechassis facilitating re-use of chassis componentsand minimising waste in a era before it was com-pulsory to do so. The concept was very simply putat the time as enabling the customers capabilityto grow, cost effectively, as their test requirementsgrew and the budget became available. With theability to grow a 100W amplifier to 200W by simplyadding 100W (and for the cost of 100W),customers were given the opportunity to engagein future capability planning, with the comfort thatMILMEGA would grow their current assets inpartnership. Our competition believed powerupgrades had no future and, taking a short termrevenue based view, believed that MILMEGAwould regret offering upgrades to its customercommunity. It would take 8 years before they toobegan to offer the concept of an upgrade but nonewith the elegance of the MILMEGA solution.MILMEGA Limited Ryde Business Park,Nicholson Road,Ryde,Isle of Wight,PO33 1BQUnited KingdomTel. +44 (0) 1983 618004 Fax. +44 (0) 1983 811521 sales@milmega.co.uk www.milmega.co.ukDesigners and Manufacturers of HighPower M|crowave and RF Amp||fersPsat 55WPsat 125WPsat 250WUpgrade yourex|st|ng amp||ferpgrad|ng your amp||fer |s eas|erthan upgrading your PC You call MILMEGA g Upg ra e rade yy yo r your n | t s | x e p a p m a gg n e | r e f | | p at 125WPsat 250W Psat 125WPsat 250W y g n | d a r g p e f | | p m a r u o y Psat 250Wr e | s a e s | r e Psat 250W g n | | e e f e h t w o n k e Wo y o d o t y t | | | b a r u o yn | n g | s n o O ! r e w o p y g n | d a r g p than upgrading your PCt s a ffa s | e g n a h c f o e c a p e h T ! gs e y e k | | s m e e s y | n o t l . b o j r u oe h t o t r e f | | p m a g n | t s | x e e h t g ndemand for higher powers, with justifying budgets today? e f | | p m a r u o ythan upgrading your PCs e | c a u q e d a n | e h t g n | t h g | | h g | ht a h t t h g u o b u o y e c n | s y a d r e t s| u p o p e b o t g n | o g t ` n s | f | e h s edemand for higher powers, with justifying budgets today? r e | s a e s | r ethan upgrading your PCd n a r e f | | p m a t n e r r u c r u o y f o sd e e n u o y w o n d n a r e f | | p m a tc n a | a b u o y o d w o H . r e h t | e r ademand for higher powers, with justifying budgets today? g n | s | m o r p m o c de h t e | b u o d o t ds ` w o r r o m o t e fu o y n e h t d n a .t a p e d a r g p u n e v o r pn a m e d s t n e m e r | u q e re | | h w , e v | t c e ff f e t s o c ou callYYou call a r o p r o O r u o f o t f e n e b e h t t e go p d n a y c n e u q e r f h t o b r o f , he d r a | u d o m e u q | n u r u O . t | d nf n o | t a t u p e r r u o g n | n | a t n | a m eCheck out our pr ou callILMEGA Mo | o p o t r e f | | p m A e r u t c u r t S e t as e | t | | | b a p a c e h t g n | w o | | a , r e wu t a h t s e r u s n e h c a o r p p a n g | so f y t | s n e d r e w o p d e | | a v | r n u r o.milmega.co.uk oducts at www Check out our pr ILMEGA. y g o ILMEGA M ovides you with an easy prs a , w o r g o t r e f | | p m a r u o y f oo b s | r e f | | p m a r u o y g n | d a r g p us a | O e v a w o r c | m e t a t s d | | o s r o.milmega.co.uk ,ovides you with an easyr u o y , n e h w d n ad n a s s e | n | a p h t o. s r e f | | p m a A s s MILMEGA Limitedel. TTel. +44 (0) 1983 618004 Designers and ManufacturMILMEGA Limited yde Business Park,Nicholson Road,R R +44 (0) 1983 618004 Fax. +44 (0) 1983 811521 sales@milmega.co.uk w o r c | M r e w o P ers of Highyde,Isle of W yde Business Park,Nicholson Road,R +44 (0) 1983 811521 sales@milmega.co.uk Designers and Manufacturs r e f | | p m A F R d n a e v a ight,PO33 1BQUnited Kingdom yde,Isle of W +44 (0) 1983 811521 sales@milmega.co.uk.milmega.co.uk www ight,PO33 1BQUnited Kingdom.milmega.co.uk1st Modular amplifier Series 2000 Upgradeable amplifiers Dual Band 5 Year Warranty introduced 1st commercial SiC Amplifier introducedMILMEGA, aCompanyWhere we lead... ...others followwhereweleadMWJ > 10450-Milmega Timeline DPS Ad 396x273 Final_Layout 114/02/201212:44Page 1MWJMILMEGA0412.indd 36 3/28/12 1:54 PMMILMEGA Limited Park Road,Ryde,Isle of Wight,PO33 2BEUnited KingdomTel. +44 (0) 1983 618004 Fax. +44 (0) 1983 811521 sales@milmega.co.uk www.milmega.co.ukDesigners and Manufacturers of High Power Microwave and RF Ampliers1994In 1994, the MILMEGAdesign team turned itsexperience gained on solidstate radar transmitters tothe problem of replacingtravelling wave tube ampli-fiers, at lower microwavefrequencies, with a solidstate equivalent.Our first 1 to 2GHz product was conceived and,with it, the concept of the corporate structureamplifier (CSA) was introduced to the EMC testcommunity. The building blocks were then laidfor the quality, reliability and ownership benefitsthat the CSA architecture would translate, to forMILMEGAs future customer community. Ourcompetition believed it to be a costly andinflexible method of amplifier implementation.It would take 10 to 15 years before they toobegan to adopt this flexible architecture withcustomer benefits.2003In 2003, following input fromusers within the automotiveEMC market,MILMEGAdeveloped the dual bandconcept. Its fundamentalgoal was to ensure thatcustomers paid only for thepower they required and notthe power competitive product forced on themthrough ineffective power architecture choice.While competitors seemed obsessed withdemonstrating how clever they were technically,MILMEGAs obsession was with providing qualityproduct, effectively targeted at customers testrequirements and their limited budgets. The dualband concept was simple two independent am-plifiers, each covering its own specific frequencyband, switched at the appropriate point in a testcycle. The upper frequency band amplifier had itspower tailored by the fact that the gain of testantennae increased with frequency, requiring lessamplifier power to be applied at these higherfrequencies. When first introduced the conceptdelivered up to a $150,000 saving when comparedagainst competitor solutions. The customer com-munity loved it. The competitor community hatedit, some even writing application notes as to whydual band amplifiers would never catch on. Nineyears later those application notes have beenwithdrawn and competitors have their own dualband offerings. One or two have even borrowedand modified our slogan from our early adverts.So... Wheresthe rest of it?Nearly Half The Size And Half The Weight... Yet More Guaranteed Power MILMEGA Limited Ryde Bus|ness Park,N|cho|son Road,Ryde,ls|e of W|ght,PO33 1BOn|ted K|ngdomTel. +44 (0} 1983 618004 Fax. +44 (0} 1983 811521 sa|es@m||mega.co.uk www.m||mega.co.ukDesigners and Manufacturers of HighPower M|crowave and RF Amp||fers*AR 200S1G4AP1dB 160W min Weight 172kg P1dB 191W min Weight 87kgMILMEGA AS0840-200/200Height 13uHeight 25u

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f | s n e d r e w o p d e | | a v | r n u r e f f o ae t t e b a g n | v | g ( e c n a m r o fo r e p Bo t y n o m | t s e t | u f r e w o p | | a e r ab d e d | v o r p t f e n e b e h t g n | s | m | xp e d a r g p u n e v o r p , y s a e n a h tn e m e r | u q e r r u o y , n e h w d n a , som AR Data Sheet AR200S1G4A 12/06/07 *Data taken fr

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. s r e f | | p m a r e w o p e t a t s d | | o st a c f | c e p s s u o | r u p s d n a c | n o m. s r e n g | s e d r e f | | p m ac a g e m | | M , y g o | o p o t " r e f | | p m Ae | t | | | b a p a c e h t g n | w o | | a , r e w om | | m . w w w t a e g n a r t c u d o r p rom AR Data Sheet AR200S1G4A 12/06/07

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m o d g n |k u2005In 2005, MILMEGA intro-duced a concept to thecustomer community, whichhas never been formallymatched by our competitors despite them having 7years to catch up. It was thefully expensed, 5 yearwarranty. All MILMEGAcustomers benefit from the reliability and qualitypedigree inherent in all our products. Our cus-tomer service levels reflect the customer focusmindset that drives our operations. It was our be-lief that our customers should bear no additionalcosts if a MILMEGA amplifier failed within 5 yearsof ownership no shipping costs, no labour costs,no component costs. So, in 2005, we introducedour simple 5 year warranty no slippery caveats,no additional service contracts / insurance topurchase, just a plain and simple promise that inthe first 5 years of ownership, if you have aproblem, you pay no costs of repair. Our competi-tors called it financial madness, we called itcustomer service. Seven years on the competitionare still shaking their collective heads (servicerevenue is valuable to them) and have made noeffort to match our unique quality statement.Our 5 year warranty remains unique and, as aquality statement, it is unrivalled.5The unique MILMEGA5 Year WarrantySetting a New Standardfor Customer ServiceNo hidden costs, no additional service contracts to purchase, no pressure to buy a replacement -just 5 years peace of mind and a simple promise to deliver the type of service you deserve.Add to th|s the benefts of our unr|va||ed upgradeab|e topo|ogy, c|ass |ead|ng power dens|ty andan env|ab|e reputat|on for go|ng the extra m||e for our customers and |t becomes c|ear whyMl|MEGA |s the preferred cho|ce for so||d state power amp||fers.F|nd out more by contact|ng Ml|MEGA, or v|s|t m||mega.co.uk for more |nformat|on.MILMEGA Limited Park Road,Ryde,ls|e of W|ght,PO33 2BEn|ted K|ngdomTel. +44 (0} 1983 618004 Fax. +44 (0} 1983 811521 sa|es@m||mega.co.uk www.m||mega.co.uk48 Hour Factory TurnaroundNo Shipment costsNo Labour costsNo Parts costsNo SweatBeneft ChecklistDes|gners and Manufacturers of H|ghPower M|crowave and RF Amp||fers2008Since early 2002 MILMEGAwere experimenting withprototype versions of wideband gap power devices,driven by a keen understand-ing that these devices, whenmature, would change thedesign landscape of amplifierdesign.Our focus was on theuse of this technology inmulti-octave band commercial amplifiers and notthe narrow band application that the technologywas derived for. IN 2008, after significant researchand development, MILMEGA introduced the firstcommercially available multi-octave band SiliconCarbide,1000W amplifier operating over the200MHz to 1000MHz band. It was up a thirdsmaller than competitive product. In 2011 weintroduced a GaN 80MHz to 1000MHz product.The 1000W product is up to 3 times smaller thanrival product and does not require the additionaloverhead of an air-conditioned room to operate in.With 10 years experience in designing with wideband gap devices, we remain well placed to buildon the exciting future opportunities of thistechnology. Our competitors have yet to matchthis significant design and market achievement.Oops...weve done it again!Oont|nu|ng Amp||fer lnnovat|on From Ml|MEGA For fu|| amp||fer spec|fcat|on, p|ease v|s|t our webs|te www.m||mega.co.ukMl|MEGA ||m|ted Park Road,Ryde,ls|e of W|ght,PO33 2BEn|ted K|ngdomTel. +44 (0} 1983 618004 Fax. +44 (0} 1983 811521 sa|es@m||mega.co.uk www.m||mega.co.ukDes|gners and Manufacturers of H|gh PowerM|crowave and RF Amp||fersOops... Oo Oops... s ps... weve done it again! eve done it again!O d d done it again! done it again!O p Oops... e it again!it again!it again!it again! e it again!ps... a aaga in in! aN transistor technology GaN transistor technologyp exceptional,rfor nsistor technology c nsistor technologyp o oven,r pr ptional, o logyreliability r prehensive Compre for ease of r suite for ease of rCable fr e hensive m communications ote interfacing emote interfacingof rease of ree eemotherboar RF motherboar communications emote interfacingd RF motherboar year 5 year fully expensed warranty y expensed warranty ully expensed warranty fully expensed warranty t n o O g n | u n | to r F p m A gl M m o n l r e f | | pG E M | t a v o n nA G n o | t w e n e h Tm p o | e v e dn a r t N a G o r F5 2 - 0 0 0 1 F R 0 8 wh w g n | r u d t n e mo | o n h c e t r o t s | s n l M m oh t s | r e f | | p m a 0E M | l M e m | t h c |a p o | e v e d o t y g G E M |e v o f o t | u s e r e hs e n r a h s a h A G Ex e h t | w t c u d o r p a A Gg | s e d s r a e y 3 r er e p o r p e h t d e s sb a | | e r | a n o | t p e c x d n a n gf o s e | t ry t | | | b n a r t N a Gr e t t e b t As u d n | e h tu p e r r | e h ty t | | a u q a o | o n h c e t r o t s | s ns e h t f | a h n a h t re y | | u f y | n o s ` y r t sg n | o g r o f n o | t a t uo c y t | | | b a | | e r d n a a p o | e v e d o t y gt h g | e w d n a e z | sr a e y 5 d e s n e p x ee | | m a r t x e e h t g| p s a s r o t | t e p m o x e h t | w t c u d o r p at e p m o c e h t f o tM | l M , y t n a r r a w rt a h w r e v | | e d o t. o t e r b a | | e r | a n o | t p e c xk c a b d n a , n o | t | tn e r e h t r u f A G E Mn a w s r e m o t s u c . y t | | | by b d e ke c n a h nh t | w , t n y qa | | u f r o FD yc f | c e p s r e f | | p m aa M d n a s r e n g | s e D p pv e s a e | p , n o | t a cH f o s r e r u t c a f u n a e t | s b e w r u o t | s |r e w o P h g | H a g e m | | m . w w w k u . o c . l Mel. TTe } 0 ( 4 4 + Md e t | m | | A G E M | a P4 0 0 8 1 6 3 8 9 1 . x a F Fe | s l , e d y R , d a o R k r a. 2 5 1 1 8 3 8 9 1 } 0 ( 4 4 +R d n a e v a w o r c | sB 2 3 3 O P , t h g | W f o e. a g e m | | m @ s e | a s 1 2r e f | | p m A F m o d g n | K d e t | n E Bk u . o c g e m | | m . w w w k u . o c . a g2011In 2011 we introduced ournew 80MHz to 1000MHz,1000W concept. Building onour modular concept from1994 and our discussionswith the EMC communityit was a triumph of theextraordinary over the ordi-nary. Maximising asset use, extreme portability,the absence of a requirement for expensivesupport infrastructure, modular to its core and ourunique (still unique after 7 years) 5 year warranty. Itsummarises our journey since 1994 customerfocussed, application efficient and a willingness totake technology risks rather than stand still. Weremain the benchmark that competitors look toand subsequentlyemulate.2000In 2000, MILMEGA intro-duced the concept of theamplifier power and fre-quency upgrade to the EMCand wireless communicationtest communities. Based onthe modular architecture ofthe MILMEGA product, theupgrade philosophy allowedcost effective power upgrades within the samechassis facilitating re-use of chassis componentsand minimising waste in a era before it was com-pulsory to do so. The concept was very simply putat the time as enabling the customers capabilityto grow, cost effectively, as their test requirementsgrew and the budget became available. With theability to grow a 100W amplifier to 200W by simplyadding 100W (and for the cost of 100W),customers were given the opportunity to engagein future capability planning, with the comfort thatMILMEGA would grow their current assets inpartnership. Our competition believed powerupgrades had no future and, taking a short termrevenue based view, believed that MILMEGAwould regret offering upgrades to its customercommunity. It would take 8 years before they toobegan to offer the concept of an upgrade but nonewith the elegance of the MILMEGA solution.MILMEGA Limited Ryde Business Park,Nicholson Road,Ryde,Isle of Wight,PO33 1BQUnited KingdomTel. +44 (0) 1983 618004 Fax. +44 (0) 1983 811521 sales@milmega.co.uk www.milmega.co.ukDesigners and Manufacturers of HighPower M|crowave and RF Amp||fersPsat 55WPsat 125WPsat 250WUpgrade yourex|st|ng amp||ferpgrad|ng your amp||fer |s eas|erthan upgrading your PC You call MILMEGA g Upg ra e rade yy yo r your n | t s | x e p a p m a gg n e | r e f | | p at 125WPsat 250W Psat 125WPsat 250W y g n | d a r g p e f | | p m a r u o y Psat 250Wr e | s a e s | r e Psat 250W g n | | e e f e h t w o n k e Wo y o d o t y t | | | b a r u o yn | n g | s n o O ! r e w o p y g n | d a r g p than upgrading your PCt s a ffa s | e g n a h c f o e c a p e h T ! gs e y e k | | s m e e s y | n o t l . b o j r u oe h t o t r e f | | p m a g n | t s | x e e h t g ndemand for higher powers, with justifying budgets today? e f | | p m a r u o ythan upgrading your PCs e | c a u q e d a n | e h t g n | t h g | | h g | ht a h t t h g u o b u o y e c n | s y a d r e t s| u p o p e b o t g n | o g t ` n s | f | e h s edemand for higher powers, with justifying budgets today? r e | s a e s | r ethan upgrading your PCd n a r e f | | p m a t n e r r u c r u o y f o sd e e n u o y w o n d n a r e f | | p m a tc n a | a b u o y o d w o H . r e h t | e r ademand for higher powers, with justifying budgets today? g n | s | m o r p m o c de h t e | b u o d o t ds ` w o r r o m o t e fu o y n e h t d n a .t a p e d a r g p u n e v o r pn a m e d s t n e m e r | u q e re | | h w , e v | t c e ff f e t s o c ou callYYou call a r o p r o O r u o f o t f e n e b e h t t e go p d n a y c n e u q e r f h t o b r o f , he d r a | u d o m e u q | n u r u O . t | d nf n o | t a t u p e r r u o g n | n | a t n | a m eCheck out our pr ou callILMEGA Mo | o p o t r e f | | p m A e r u t c u r t S e t as e | t | | | b a p a c e h t g n | w o | | a , r e wu t a h t s e r u s n e h c a o r p p a n g | so f y t | s n e d r e w o p d e | | a v | r n u r o.milmega.co.uk oducts at www Check out our pr ILMEGA. y g o ILMEGA M ovides you with an easy prs a , w o r g o t r e f | | p m a r u o y f oo b s | r e f | | p m a r u o y g n | d a r g p us a | O e v a w o r c | m e t a t s d | | o s r o.milmega.co.uk ,ovides you with an easyr u o y , n e h w d n ad n a s s e | n | a p h t o. s r e f | | p m a A s s MILMEGA Limitedel. TTel. +44 (0) 1983 618004 Designers and ManufacturMILMEGA Limited yde Business Park,Nicholson Road,R R +44 (0) 1983 618004 Fax. +44 (0) 1983 811521 sales@milmega.co.uk w o r c | M r e w o P ers of Highyde,Isle of W yde Business Park,Nicholson Road,R +44 (0) 1983 811521 sales@milmega.co.uk Designers and Manufacturs r e f | | p m A F R d n a e v a ight,PO33 1BQUnited Kingdom yde,Isle of W +44 (0) 1983 811521 sales@milmega.co.uk.milmega.co.uk www ight,PO33 1BQUnited Kingdom.milmega.co.uk1st Modular amplifier Series 2000 Upgradeable amplifiers Dual Band 5 Year Warranty introduced 1st commercial SiC Amplifier introducedMILMEGA, aCompanyWhere we lead... ...others followwhereweleadMWJ > 10450-Milmega Timeline DPS Ad 396x273 Final_Layout 114/02/201212:44Page 1MWJMILMEGA0412.indd 37 3/28/12 1:54 PM Most Valuable ProductZero-IFreceiversarenotnew;theyhave beenaroundforsometimeandare prominently used in cell phone handsets. Howevertheiruseinhighperformancereceiv-ers,suchasthoseinwirelessbasestations, hashadlimitedsuccess.Thisisdueprimarily to their limited dynamic range and that they are less understood. A new wide bandwidth zero-IF I/Qdemodulatorhelpstorelievethedynamic range and bandwidth shortcomings for main as well as digital pre-distortion (DPD) receivers and enables 4G base stations to cost effectively ad-dresstheever-increasingbandwidthneedsof mobileaccess.Thisfeaturecovershowtoop-timizeperformancebyminimizingtheIM2non-linearity and DC offset that reduce the dynamic range of zero-IF receivers, thus offering a viable alternative to an otherwise challenging design.PUSHING EVER WIDER BANDWIDTHUntilrecently,mostbasestationsneededto onlydealwitha20MHzwidechannelband-width,typicallyallocatedtovariouswireless carriers. Associated with this 20 MHz channel is acompanion100MHzbandwidthDPDreceiver tomeasureintermodulationdistortionspursup tofth-orderforeffectivedistortioncancella-tions. These requirements can generally be met effectivelywithhigh-IF(heterodyne)receivers. Nowadays though, such designs become much morechallengingwithindustrytrendspushing for base stations that support operation over the entire60MHzbands.Accomplishingthisfeat hassignicantcostsavingimplicationsforthe entirewirelessmanufacturing,installationand deployment business model.To accommodate the three times increase in bandwidth,theDPDreceiverbandwidthhasto increase from 100 to 300 MHz. In 75 MHz bands, theDPDbandwidthgrowstoastaggering375 MHz.Thedesignofreceiversthatcansupport this bandwidth is not trivial. Noise increases due tothewiderbandwidth,gainatnessbecomes more difcult to achieve, and the required sam-pling rate of A/D converters increases dramati-cally. Furthermore, the cost of such higher band-width components is appreciably higher.The modest bandwidth of a traditional high-IF receiver is no longer sufcient to support the 300 MHz or higher DPD signal with typically 0.5 dB gain atness. The 300 MHz baseband bandwidth wouldrequirechoosinganIFfrequencyof150 MHz at a minimum. It is not trivial to nd an A/D converter capable of a sampling rate upward of 600 Msps that is reasonably priced, even at 12-bit resolution. One may have to compromise and resort to a 10-bit converter.NEW I/Q DEMODULATOR EASES BANDWIDTH CONSTRAINTSLinear Technologys LTC5585 I/Q demodulator isdesignedtosupportdirectconversion,thus allowingareceivertodemodulatetheafore-mentioned300MHzwideRFsignaldirectlyto baseband (see the following link for I/Q demodu-lator theory of operation www.mwjournal.com/IQtheory). The I and Q outputs are demodulated toa150MHzwidesignal,onlyhalftheband-widthofahigh-IFreceiver.Inordertoattaina passbandgainatnessof0.5dB,thedevices 3 dB corner must extend well above 500 MHz.TheLTC5585supportsthiswidebandwidth withatunablebasebandoutputstage.Thedif-ferentialIandQoutputportshavea100pull-uptoVCCinparallelwithaltercapacitanceof about 6 pF (see Figure 1). This simple R-C network allowsfortheformationofoff-chiplowpassor bandpasslternetworkstoremovehigh-level out-of-bandblockersandequalizationofgain roll-off the baseband amplier chain that follows the demodulator. With a 100 differential output Linear Technology Corp.Milpitas, CA38 MICROWAVE JOURNAL APRIL 2012I/Q Demodulator Eases Bandwidth Constraints_4M20 FINAL.indd 38 3/30/12 8:16 AMWhat have we accomplished together?USA: +1 480-961-1382Europe: +32 9 235 3611www.rogerscorp.com/acm Get the full contest details at www.rogerscorp.com/acmcontest. Contest ends on May 1, 2012 and the winner will be announced at IEEE/IMS 2012; Montreal, Canada.199220112002197819841958All winners receive a free ad campaign.For more details and to enter go to: www.rogerscorp.com/acmcontest ENTER to Win a ROG Award!1960Award Categories:Most Extreme Conditions Most Unique & Creative Use of Material Most Challenging Board BuildBest Digital ApplicationLongest Product LifeMost Innovative DesignTell us your story and you could WIN!Winners will be announced at the Rogers Customer Appreciation Event during IMS2012 in June.ACMcontestfullad19.indd 1 10/14/11 2:06:56 PMMWJROGERS1111.indd 39 3/30/12 2:54 PM40 MICROWAVE JOURNAL n APRIL 2012Most Valuable ProductLOisspaced10MHzapartat2130 MHz.TheresultantIM2spurwould fallatf2-f1,or1MHz.TheLTC5585 hastheuniqueabilitytoadjustfor minimumIM2spursindependentlyon theIandQchannelsbyusingexter-nalcontrolvoltages.Figure3shows a typical set-up for IIP2 measurement and calibration. The differential base-bandoutputsarecombinedusinga balunandthe1MHzIM2difference frequency component is selected with alowpassfltertopreventthestrong maintonesat10and11MHzfrom compressingthespectrumanalyzer frontend.Withoutthelowpassflter, 20 to 30 dB of attenuation and long av-eragedmeasurementtimesarenec-essaryonthespectrumanalyzerto attain a good measurement. As shown in the output spectrum of Figure 4, the IM2componentpredictablyfallsin-bandat1MHz.Theplotalsoshows theIM2productbeforeandafterad-justment,reducingthespurlevelby approximately20dBbyadjustingthe controlvoltagesontheIP2IandIP2Q pins. This adjustment reduces the IM2 spur down to a level of -81.37 dBc.With this IIP2 optimization capability, two possible strategies of IP2 calibration maybeconsidered.Onecanbeaset-and-forgetcalibrationstepperformed at the factory. In this case, a simple trim potentiometerforeachadjustmentpin suffces, as illustrated in Figure 3. Alter-natively, an automatic, closed loop cali-brationalgorithmcanbeimplemented in the software which allows the equip-ment to be calibrated on a periodic ba-sis.ForDPDreceiversthatarealready canbeextended from250to630MHz using a series induc-tance of 18 nH and a shuntcapacitance of4.7pF.Figure2 showsthevariety ofoutputresponses thatarepossible withdifferentload-ing.Oneresponse iswithdifferential loadingresistances of200Wand10kW. For 10 kW loading, the -0.5dBbandwidth canbeextended from150to360MHz usingaseriesinduc-tanceof47nHanda shunt capacitance of 4.7 pF.Second-order IntermodulatIon dIStortIon SpurS matterIn a direct conversion receiver, the secondorderintermodulationdistor-tion products (IM2) fall directly in-band at the baseband frequencies. Take, for example, two equal power RF signals, f1 and f2, spaced 1 MHz apart at 2140 and2141MHz,respectively,whilethe loading resistance in addition to the ex-ternal 100 W pull-up resistors, the -3 dB bandwidth reaches 840 MHz.BaSeBand BandwIdth extenSIonAsingleL-Cfltersectioncanbe usedtoextendthebandwidthofthe basebandoutput.Figure1showsthe chips baseband equivalent circuit with basebandbandwidthextension.With 200Wloading,the0.5dBbandwidth Most Valuable Products Fig. 1Baseband output equivalent circuit for bandwidth extension with L = 18 nH and C = 4.7 pF.PACKAGEPARASITICSAC CURRENTSOURCE100 100 30 mA 30 mALTC5585RPULLUP100 RPULLUP100 RLOAD(DIFF)200 C4.7 pFC4.7 pF6 pF 6 pF0.2 pF0.2 pFGND1K1+1

1.5 nF1.5 nFVCCVCCL18 nFL18 nF0.5 dB BW = 630 MHzs Fig. 2Conversion gain vs. baseband frequency with differential loading resistance and L-C bandwidth extension.4202468101.0 0.8 0.6 0.4 0.2TC = 25C0CONVERSION GAIN (dB)BASEBAND FREQUENCY (GHz)R = 200 , BW = 250 MHzL = 18 nH, C = 4.7 pF, R = 200 , BW = 630 MHzR = 10 k, BW = 150 MHzL = 47 nH, C = 4.7 pF, R = 10 k, BW = 360 MHzs Fig. 3Test set-up for IIP2 calibration with 1 MHz lowpass flters to select the IM2 component.f2 = 2141 MHzf1 = 2140 MHzI-CHANNEL OUT TOSPECTRUM ANALYZER1 MHz LPF1 MHz LPFIP2IIP2Q LOfLO = 2130 MHzRF6 dB1V1VLTC558590Q-CHANNEL OUT TOSPECTRUM ANALYZERs Fig. 4Output spectrum without lowpass.0102030405060708090100110120IM2 PRODUCTBEFORE ADJUSTRef Lv10 dBmStart 0 Hz 2 MHz/ Stop 20 MHz25A35AADelta 1 [T2]RBW 10 kHzVBW 10 kHzSWT 500 msRF Att 20 dBUnitdBm2AVG3VIEW81.37 dB9.00000000 MHzAFTER ADJUST40 MICROWAVE JOURNAL n APRIL 2012_4M20 FINAL.indd 40 3/30/12 8:16 AMMWJCPI_Beverly.indd 41 3/28/12 1:54 PMmonitoringtheirtransmittersoutput, this is trivial as the transmitters can eas-ily generate the two test tones. For main receivers,thiscalibrationmayinvolve additionalhardwaretoloopbackthe twotesttonestothereceiverchannel. In any event, these can all be performed during an off-line calibration cycle. Such anapproachwouldtakeintoaccount the actual operating environmental fac-torsthatmayaffectthebasestations performance.Optimizing A/D COnverter DynAmiC rAngeAsimilaradjustmentcapabilityis also integrated into the chip to zero out the I and Qs DC output voltage. DC off-set, a product arising from internal mis-match and self-mixing of the LO and RF input leakages, can diminish the ADCs dynamicrangewhenthesignalchain is DC coupled throughout. To illustrate, amodest10mVofoutputDCoffset voltage, when passed through a 20 dB gain stage, would result in 100 mV of DC offset at the input of the A/D converter. With 2 Vp-p input range of a 12-bit ADC, thisamountofDCoffsetrepresents 205 LSBs of headroom reduction, or ef-fectivelyreducingtheADCsdynamic range by 0.9 dB.Tominimizetheleakagebetween theLOandRFinputs,careshouldbe takentoisolatethesetwosignals.In the PCB layout, separate these two sig-nal traces from one another to prevent cross-coupling.TheLOsignal,evenif thereismeasurableleakagetotheRF port,willself-mixtoformaDCoffset termattheoutput.FortunatelytheLO level is usually constant, so the DC off-setvoltageisalsoconstantandcan beeasilycanceledbytheadjustment. More problematic is the RF input, which canvaryoverwidesignallevels.Any signalleakagetotheLOinputwould self-mixandproduceadynamicDC offset voltage as the signal varies. This willdistortthedemodulatedsignal.So keepingtheleakagesmallwillhelpto reduce the DC offset to a minimum.pOtentiAl COst Benefits Of DireCt COnversiOn reCeiversAzero-IFreceiverisparticularly compellingduetoitspotentialcost savings.Asmentionedabove,theRF signal demodulates to a low frequency baseband.Atlowerfrequencies,the designoftheflterbecomeseasier. Furthermore, zero-IF demodulation pro-ducesnoimageatthebaseband,thus eliminatingtheneedforarelatively expensiveSAWflter.Perhapsmost attractiveofallisthattheADCsam-pling rate can be signifcantly reduced. Inourexampleabove,the150MHz IandQbasebandbandwidthcanbe effectivelyaddressedwithadual310 Msps ADC such as Linear Technologys LTC2258-14,withoutresortingtoa much more expensive higher sampling rate ADC.Asthebandwidthandperformance ofwirelessreceiversincrease,anew widebandquadraturedemodulatorof-fers an alternative approach that helps toaddressitsarchitecturalshortcom-ingsandraisesthelevelofreceiver performancewhiledrivingacompel-ling cost metric.Linear Technology Corp.,Milpitas, CA(408) 432-1900,www.linear.com.42 MICROWAVE JOURNAL APRIL 2012Greenray OCXOs provide exceptional FrequencyStability, Vibration, Shock, and Acceleration Sensitivityperfomance for the most demanding Communications,Aerospace, and Test & Measurement applications.TEL 717-766-0223 www.greenrayindustries.comsales@greenrayindustries.comFrequency 10 - 100 MHzAttributes Small SizeLow Phase NoiseBest Stability 5 x 10-8Output CMOS, Sine waveSize 20.32 x 12.70 x 9.140.8 x 0.5 x 0.36 in., DIPFrequency 10 - 100 MHzAttributes CompactPackageBest Stability 1 x 10-8Output CMOS, Sine waveSize 25.4 x 25.4 x 13.461.0 x 1.0 x 0.53 in.Frequency 10 - 120 MHzAttributes Ultra-lowPhase NoiseBest Stability 5 x 10-9Output Sine waveSize50.80 x 50.80 x 19.052.0 x 2.0 x 0.75 in., SMAYH1420 YH1460 YH1322think GreenrayMade in the USAocxo_mrf.4.12final:gri_mwj_5.113/12/126:16 PMPage 1Most Valuable Product_4M20 FINAL.indd 42 3/30/12 8:16 AM498 rev.BThe Design Engineers Search Engine finds the model you need, Instantly For detailed performance specs & shopping online see

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Excellent electrical performance across the entire frequency rangemakesthemidealnotonlyforaerospaceandmilitary groundapplications, butanywherelong-termrel i abi l i ty addsbottom-linevalue:instrumentation, heavyindustry, high-speedproduction, andunmannedfacilities, to name just a few. So why wait? Go to minicircuits.com for performance data, technicalspecifcations, andremarkablylowprices, and see what MAC mixers can do for your applications today!MAC498revBmac.indd 1 2/27/12 12:55 PM MWF498REVB0412.indd 43 3/28/12 1:54 PMPerspectiveSeveralAustin,Texascompanies were founded on the fundamen-tal idea of applying mixed-signal CMOStechnologytoanalogdesign challenges that traditionally used com-plicated and expensive semiconductor technologyordiscreteanalogcom-ponents.Repeatedly,onceaviable CMOSsolutionwasintroduced,the marketmadeawholesaleshifttothe CMOS implementation. In the case of Javelin, the technical challenge was to designalinearcellularpowerampli-fer (PA) instandard CMOS technol-ogy when existing suppliers are using proprietaryGaAstechnology.Several companieshadalreadyinvestedmil-lionsofdollarsandmorethanade-cadeofdesigneffortattemptingto developacellularPAinCMOS,but theywereunabletomeetstringent 3Gperformancerequirementsina CMOSimplementation.Therefore, Javelinwasalsofacedwiththebusi-nesschallengeof provingthecapa-bilities of CMOS for 3G applications and convincingaTierI handsetmanufac-turertoqualifya new PA supplier.Javelinsees3G astheentrypoint forCMOStobe-comeamainstream processtechnology forthecellularPA. Therequirements for a 3G PA are very demanding in terms ofperformance(ef-44 MICROWAVE JOURNAL APRIL 20123G Power Amplifers: Moving from GaAs to CMOSfciency,linearityandnoise),reliabil-ity and also in having a high yielding, largecapacitymanufacturingsupply chain.Javelinisthefrstcompanyto produceaCMOS3GPAthatdoes notcompromiseanyofthesere-quirements.TobreaktheGaAsPA monopolyinthe3Ghandset,Javelin developed an innovative mixed-signal architecture offering performance ad-vantageswhilemeetingorexceeding allstringentindustryrequirements. Theinnovativearchitectureprovides aninherentbandpassresponseto minimizereceivenoisefor3Gand other radios in the handset, while de-livering excellent effciency across the wide range of required output power levels.BecauseJavelinsPAisa100 percent CMOS implementation, sup-ply limitations are eliminated.JavelinsPAwasmodeledand designedtomeettheoutputpower andlinearityrequirementsofthe 3GPPUMTSstandards.ThePAhas a bandpass architecture that includes aninputmatchingnetwork,tunable bandpass fltering between each am-pliferstageandanoutputmatch-ingnetwork(seeFigure1).ThePA Robert Wagner, Director of Marketing, Javelin Semiconductor, Austin, TXs Fig. 1JAV550X architecture.VBATREGULATOR/BIASRFOCPLICPLORFIINPUTMATCHMPICONTROL(OPTIONAL)PACONTROLVM0 VEN VM1OUTPUTMATCH_4M29 FINAL.indd 44 3/30/12 8:16 AMVisit cree.com/rf to sign up for the RF enewsletter and request samples, or call us at +1 866 924 3645Cree is the worlds largest provider ofGaN-on-SiC products and services for the RF/wireless industry. Whether you need foundry services, chips or packaged product, Cree has the capacity and commercial availability you need to elevate your designs performance with the highest reliability.Broadband CW Power Applications20 MHz 1000 MHz2.0 GHz 6.0 GHz 20 MHz 6000 MHz2.5 GHz 6.0 GHz0.5 GHz 2.5 GHz6.0 GHz 18.0 GHzTelecomRadarSatcom4G LTEL-BandC-BandSmall CellS-BandX-BandMulti-bandX-BandKu-BandCREE GaN-on-SiC DEVICES DELIVER INDUSTRY-LEADING PERFORMANCECREE RF PRODUCTScr4851 MWJ 04/11 Cree Wireless/RF Version Overview Portfolio AF.indd 1 3/20/12 11:22 AM MWJCREE0412.indd 45 3/28/12 1:54 PMPerspective46 MICROWAVE JOURNAL n APRIL 2012foracceptablereceivesensitivity(de-sense). This level of isolation from the DPXisachallenge,andverycareful PCBlayoutisrequiredfortheDPX andsurroundingcomponents.Jave-lins PA reduces the DPX isolation re-quirementbytheTX-to-RXgaindif-ference.Inthiscase,theDPXisola-tionrequirementisreducedbymore than 10 dB.Also,particularlyinsmartphones, the bandpass fltering can provide ben-eftstooverallperformance.Smart-phonescontainmultiplewirelessin-terfaces, such as Wi-Fi, Bluetooth and GPS,whichhavelowreceivesignal powerlevels.Thebandpassfltering reduces interference with these other wireless interfaces and helps to lessen theRFdesignchallengeswithinthe smartphones.JavelinoffersafamilyofCMOS PAscoveringthemostpopular UMTSbandsincludingsolutionsfor Band I (1920 to 1980 MHz), Band II (1850 to 1910 MHz), Band V (824 to 849 MHz) and Band VIII (880 to 915 MHz).Javelinsarchitectureensures consistentperformancebyusinga patenteddesignwithtunableflter-ingtooptimizeperformanceand maximizemanufacturingyield.The resultisahighlymanufacturable, high yielding device that consistently meetsstringentspecifcations.For example,theJAV5501offers26.5 dBmmaximumlinearoutputpower inhighpower(HP)mode,28.5dB typicalgaininHPmode,-42dBc ACLRwith5MHzoffset,-148 dBm/HznoiseinRXbandwith190 MHzoffsetand1.5percenttypical error vector magnitude (EVM).AllofJavelinsPAsofferlowav-eragecurrentwithadirectconnec-tiontothebattery.TheJAV5505 andJAV5508leadtheindustrywith DG-09averagecurrentbelow19 mA,whichisover30percentlower thancompetingdevices.Atspecifc lowoutputpowerlevels,PAcurrent canbereducedbyover60percent. Thelowaveragecurrentisachieved using typical low power (LP, -47 to 6 dBm),mediumpower(MP,6to15 dBm)andhigherpower(HP,15to 26dBm)switchpoints,andwithout the additional cost and board area of a switch-mode power supply (SMPS) DC/DCconvertertocontrolthePA supplyvoltage.Figure3showsthe flter can be removed, saving both cost and board area. The result is a band-passresponsewithlowout-of-band skirts that reduces receiver noise (see Figure 2).Inthesituationwheretransceiver noise is already low and a TX SAW is notrequired,thebandpassfltering provides additional margin for ease of implementationaswellasmanufac-turing margin. Even with a low-noise transceiverandatraditionalPAof anyband,theduplexer(DPX)must maintain greater than 45 dB isolation also integrates complete circuitry for power regulation, PA bias and power control.Theintegratedbandpassflter-ingcanhaveasignifcantbeneftin UMTSBandI(1920to1980MHz transmitand2100MHzreceive)ap-plications,whichissupportedbythe BandIPA.Typically,thetransceiver transmitnoiseinBandIisfltered withasurfaceacousticwave(SAW) flter between the transceiver RF out-put and PA RF input. With the band-passflteringinthisdesign,theSAW s Fig. 2Bandpass flter response for vari-ous PAs.40302010010203040502.8 2.5 2.2 1.9 1.6 1.3 1.0GAIN (dB)FREQUENCY (GHz)GaAs PA #1GaAs PA #2GaAs PA #3CMOS PAs Fig. 3Weighted average current in each mode according to the DG-09 average cur-rent defnition.302520151050DG-09 AVERAGE CURRENT (mA)POWER MODEGaAs PAJAV5508LP MP HP LP+MP+HP_4M29 FINAL.indd 46 3/30/12 8:16 AMUSA: 781-376-3000 Asia: 886-2-2735 0399 Europe: 33 (0)1 43548540 Email: sales@skyworksinc.comwww.skyworksinc.com NASDAQ: SWKSSamples and Evaluation Boards Available at www.skyworksinc.comUltra Low Noise Ampliers (LNAs) Select LNAs Available from Stock for Prototype or High-Volume Production IExcellent Noise Figure, as Low as 0.50 dBIUnconditional Stability Matching CircuitsITemperature-Stable PerformanceILow Cost, Small Form Factor PackagingINarrow and Broadband OptionsIHigh Linearity and Adjustable Gain DesignsLNAs for Cellular Infrastructure, GPS, Broadband, ISM Band, and WLAN ApplicationsSkyworks Green products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green, document number SQ04-0074. Part NumberNew Products ApplicationFrequency Range(MHz)Test Frequency (MHz)Gain(dB)NF(dB)OIP3(dBm)OP1 dB (dBm)VDD (V) (Operating Range)IDD (mA) (Operating Range)Package(mm)SKY67101-396LF Cellular Infrastructure4001200 900 17.5 0.57 34 19 4(3.35.0)54(2090)DFN 8L 2 x 2 x 0.75SKY67100-396LF Cellular Infrastructure12002300 1950 17.5 0.7 34 18.5 4(3.35.0) 55(2090)DFN 8L 2 x 2 x 0.75SKY67102-396LF Cellular Infrastructure20003000 2600 17.2 0.8 34 15 4(3.35.0) 50(2090)DFN 8L2 x 2 x 0.75SKY67001-396LF Cellular Infrastructure7001000 900 17.5 0.6 40.5 21 5 (3.35.0) 100 (50120)DFN 8L2 x 2 x 0.75SKY67002-396LF Cellular Infrastructure16002100 1950 17.5 0.65 39.5 20 5(3.35.0) 95 (50120)DFN 8L2 x 2 x 0.75SKY67003-396LF Cellular Infrastructure20003000 2600 17.5 0.88 39 19.75 (3.35.0)100 (50120)DFN 8L 2 x 2 x 0.75SKY67105-306LF Cellular Infrastructure6001100 850 37 0.7 41 26 5 (3.55.0) 140 (120155) QFN 16L 4 x 4 x 0.90SKY67106-306LF Cellular Infrastructure15003000 1950 35 0.65 37 24 5 (3.55.0) 100 (80125)QFN 16L 4 x 4 x 0.90SKY67107-306LF Cellular Infrastructure23002800 2600 32 0.85 37.5 18.5 5 (3.55.0)125 (50145)QFN 16L4 x 4 x 0.90SKY67012-396LF General Purpose 300600 450 16.5 0.85 24 14 3.3 (1.85.0)15(530) DFN 8L 2 x 2 x 0.75SKY67013-396LF General Purpose 6001500 900 14 0.85 26 15.5 3.3 (1.85.0)15(530)DFN 8L2 x 2 x 0.75SKY67014-396LF General Purpose 15003000 2450 13 0.95 26 15 3.3 (1.85.0)15(530)DFN 8L 2 x 2 x 0.75SKY65404-31 5.8 GHz WLAN and ISM Band49005900 5800 13 1.2 20 9 3.3(2.85.0)11(1015)DFN 6L1.5 x 1.5 x 0.45SKY65405-21 2.4 GHz WLAN and ISM Band24002500 2450 15 1.1 24 15 3.3(2.85.0)12(1016)DFN 6L1.5 x 1.5 x 0.45MWJSKYWORKS0312.indd 47 3/28/12 1:54 PM48 MICROWAVE JOURNAL APRIL 2012Perspectivecurrentlevelsthataretheweighted averagecurrentsineachmode,ac-cordingtotheDG-09averagecur-rent denition.Because the PA delivers signicant powerandisconnectedtothebat-teryandtheantenna,TierIhandset manufacturersrequirenotonlyhigh performance,butalsohighquality andreliability.InJavelinscase,stan-dardCMOStechnologybecomesa majorbenet,becauseamonolithic CMOSapproachleadstothehighest manufacturinglineyieldandmaxi-mizes long term reliability in the eld. Javelins PA family utilizes the worlds largestcapacityprocessnodeofthe CMOSsupplychaincombinedwith industrystandardhigh-volumepack-agingtechnologytoofferworld-class quality and reliability, including a very hightolerancetoelectrostaticdis-charge (ESD) events. Javelin PAs are rated at 6 kV on RF pins and 3 kV on all other pins which is critical to man-ufacturingqualityandreliability.Ad-ditionally,JavelinPAscanwithstand driving full output power into a short circuitoropencircuitwithoutdam-age,whichiscriticaltoeldquality and reliability.The3Gsmartphonemarketisan ideal starting point for a CMOS PA, as 3G is forecasted to be the largest seg-ment of the mobile phone market over the next ve years. Comparatively, the LongTermEvolution(LTE)market segment is currently small on a world-wide basis, but continues to experience rapidgrowth.Javelinsmixed-signal CMOSarchitectureiswellsuitedfor LTE.ThetransitiontoLTEwillcre-ateadditionalPAdesignchallenges while the higher peak to average ratios willrequireadvancedarchitectures withmoreintegratedintelligenceand CMOS is well suited for this trend. As anexample,theMIPIRFFront-End (RFFE)controlinterface,supported onJavelinPAs,isanindustrystan-darddigitalcommunicationsinterface whichwasdenedtoenabletheinte-grationofadvancedfeaturesintothe PA. In the future, this digital interface tothePAcanbeusedforadvanced powercontrolandenvelopetrack-ingtechniques.Thus,Javelinseesthe CMOSPAtrendcontinuingfrom3G to LTE and beyond. IMS is your optimal source for passive components!Get Samples and See More at www.ims-resistors.com! Chip Attenuators- DC-40GHzIAX Series, V-Series & A-Series Power Ratings to 100W 11 Sizes- 0402 to 3725 Values to 70dB 1/2dB Steps to 16.5dB Solder, Epoxy or Wirebond Terminals Millions in Stock!Resistors RF Loads Attenuators Splitters Couplers Dividers Filters Thermal Management CustomsAlN Power Resistors & TerminationsN-Series Power Ratings to 380W Characterized to 40GHz 8 Sizes- 0505 to 3725 Values to 10 to 2K Solder, Epoxy or Wirebond Terminals 4 Weeks Max Lead Time!For ANY RF & Microwave application50 Schoolhouse Lane Portsmouth, RI 02871 Ph: (401) 683-9700 Fx: (401) 683-5571 _4M29 FINAL.indd 48 3/30/12 8:16 AMHUBER+SUHNER AG 9100 Herisau / Switzerland, info@hubersuhner.com, hubersuhner.comThe SUCOFLEX 400 microwave cable family has been specially developed for high perfor-mance defence, medical and test & measure-ment applications. Lowest loss on the market up to 26.5 GHz Best phase stability versus temperatureand bending Excellent VSWRSUCOFLEX 400 the loss RevolutionHSI_SF400_T+M_MW_journal_April.indd 1 14.03.2012 12:35:41HUBER+SUHNER AG 9100 Herisau / Switzerland, info@hubersuhner.com, hubersuhner.comThe SUCOFLEX 400 microwave cable family has been specially developed for high perfor-mance defence, medical and test & measure-ment applications. Lowest loss on the market up to 26.5 GHz Best phase stability versus temperatureand bending Excellent VSWRSUCOFLEX 400 the loss RevolutionHSI_SF400_T+M_MW_journal_April.indd 1 14.03.2012 12:35:41MWJH+S0412.indd 49 3/30/12 3:14 PMSpecial ReportMIMO and All That JazzA preview of the MIMO OTA expert panels to speak at this years CTIA Wireless conference in New Orleans.To deliver higher data rates, greater cov-erage areas, and lower operational costs, 4GwirelesstechnologiessuchasLTE and LTE-Advanced employ enhanced spectral effciency through the use of MIMO antennas. InMIMOsystems,atransmittersendsmul-tiplespatialstreamsusingmultipletransmit antennas. These streams are transmitted over-the-airthroughachannelconsistingofmulti-ple paths, arriving at multiple receive antennas atdifferenttimes.Thereceiverthendecodes the received signal vectors into the original in-formation.Multipleantennatechniquesinclude: 1.) pre-coding or multi-stream beamforming, whereby the same signal is emitted from each transmitterantennawithappropriatephase weightinginordertomaximizethesignal poweratthereceiverinput2.)spatialmulti-plexing whereby a high rate signal is split into multiple lower rate streams and each stream is transmittedthroughthechannelatthesame frequencyand3.)diversitycodingwhereby the signal is emitted from each transmit anten-na with full or near orthogonal coding, exploit-ing the independent fading in the antenna links to enhance signal diversity.Codingandsignalprocessingarekeyel-ementsinasuccessfulimplementationof MIMO.Everycommunicationchannelrep-resentsamajorfactorintheperformanceof a wireless system and therefore is the focus of muchresearch.BecauseMIMOoperatesat an unprecedented level of complexity in order toexploitthechannelspace-timeresources, anewlevelofunderstandingofthechannel space-time characteristics is required to assess thepotentialperformanceofpracticalmulti-antenna links. MIMO terminal performance is a combination of antenna characteristics, radio propagationconditions,RF,basebandhard-ware,andsoftware,andthereforetheyneed tobewellunderstoodthroughsomeformof MIMOOver-the-Air(OTA)testsystem.The conventionalwayoftestingtheantennachar-acteristicsandthesignalprocessingperfor-manceseparatelydoesnotassesstheMIMO device performance realistically.Lastyear,MicrowaveJournalteamedup withMIMOOTAtestexpertsfromETS-Lindgren,AgilentTechnologies,Spirent,and Elektrobit to present a two-hour panel session atCTIAWireless2011.Theliveforumand simultaneouswebcastfocusedonthefunda-mentals of MIMO OTA testing as an accurate and cost-effective solution to validate complex MIMOdeviceperformance,providinganun-derstanding of the core elements that facilitate systematic and repeatable measurements.50MICROWAVEJOURNALAPRIL2012Lastyearsforumhighlightedthetechnicalfea-tures of the test system, including the chamber, software and instrumentation. The speakers pre-sented information on cost-effective ways to per-formMIMOOTAcharacterizationusingantenna pattern measurements, concepts and underlying assumptions behind MIMO OTA models and the importance of radio channel modeling and valida-tioninMIMOOTAtesting.Aninteractivepanel discussionwiththespeakersallowedaudience members to explore a range of related topics with these experts frsthand.The CTIA Wireless 2011 MIMO Expert Forum Q&Asessionexploredarangeoftopics.Moray Rumney (Agilent), Dr. Michael Foegelle (ETS-Lind-gren), Doug Reed (Spirent Communications) and Jukka-PekkaNuutinen(Elektrobit)tookturnsan-swering questions on OTA system calibration, vali-dation through feld mapping, the current situation on OTA standards and more. To see a sample of the CTIA Wireless 2011 MIMO panel discussion, go to mwjournal.com/CTIAW2011_MIMO_QandA._4m28 FINAL.indd 50 3/30/12 8:16 AMOver-the-Air (OTA) Signal Challenges and Implications -Recommendation for LTE RANProtocolsusedbyLTEnetworkstoleverage MIMOtechnologiesaresignifcantlyimpacted bycorrelationandthusbythechannelmod-elsu