MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan...
-
Upload
esmond-miller -
Category
Documents
-
view
216 -
download
1
Transcript of MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan...
![Page 1: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/1.jpg)
MURITotal Ionizing Dose Effects in Bulk
Technologies and Devices
Hugh Barnaby, Jie Chen, Ivan SanchezDepartment of Electrical EngineeringIra A. Fulton School of Engineering
Arizona State University
![Page 2: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/2.jpg)
Outline
Overview of ASU tasks
Total ionizing dose defect models
Device TID responseo Drain-to-source leakage
o Inter-device leakage
Analysis of defect buildup across oxide structure and between technologies
Other work
![Page 3: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/3.jpg)
ASU task
• Characterize and model TID effects in modern devices, primarily CMOS transistors
• Technologies: deep sub-micron bulk CMOS, and silicon on insulator, general isolations
![Page 4: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/4.jpg)
ASU task
• Characterize and model TID effects in modern devices, primarily CMOS transistors
• Technologies: deep sub-micron bulk CMOS, and silicon on insulator, general isolations
In Year 1, we have primarily focused ondeep-sub-micron bulk CMOS and generalisolation technologies.
![Page 5: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/5.jpg)
Primary TID Threat
TID defect build-up in the “thick” shallow trench isolation (STI)
Defects
• Not - oxide trapped charge (E’ )• Nit – interface traps (Pb)
Both Nit and Not are related to holesgenerated and/or hydrogen present inoxide
Not, Nit tox
first orderassumption
STI
Gate oxide
halo implants
n+ source n+ drain
p-body
STI
> 300 nm < 3 nm
Trapped charge buildup in STI
![Page 6: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/6.jpg)
oxotygot tεfεfDkΔN
After Fleetwood et al. TNS 1994
Model Parameters
Model for Not buildup
D - total dose [rad]
kg - 8.1 x 1012 [ehp/radcm3]
fy - field dependent hole yield [hole/ehp]
fot - trapping efficiency [trapped hole/hole]
tox - oxide thickness [cm]
![Page 7: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/7.jpg)
Hole trapping processes
+
+ - surviving hole (p)
- hole trap (NT)
- trapped hole (Not)
fp- hole flux
area =
Si-SiO2
interface
-+
-
+
-
+ +
-
+ +fp,i
tox
Ionizing radiation Si-SiO2
interface
-+
-
+
-
+ +
-
+ +fp,i
tox
Ionizing radiation
![Page 8: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/8.jpg)
ip,T
otpotT
ot
σfN
(t)Nσf(t)NN
t
N
After Rashkeev et al. TNS 2002
Simple analytical model (Not)
yg
ygp
fkD
t
pfkD
x
f
oxygip, tfkDf (steady state) (fp > 0 for all x)
oxygTot tftkDσNN
fot D(No saturation or annealingand traps at interface)
![Page 9: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/9.jpg)
oxitDHygit tffεfDkΔN
After Rashkeev et al. TNS 2002
Model Parameters
Model for Nit buildup
D - total dose [rad]
kg - 8.1 x 1012 [ehp/radcm3]
fy - field dependent hole yield [hole/ehp]
fDH - hole, D’H reaction efficiency [H+/hole]
fit - H+, SiH de-passivation efficiency [interface trap/H+]
tox - oxide thickness [cm]
![Page 10: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/10.jpg)
De-passivation processes
- protons
- Si-H (NSiH)
- dangling bond (Nit)
area = it
H
H+
fH - proton flux
- hydrogen defect (D’H)
Si-SiO2
interface
-+
-
+
-
+
H
-
+fH
tox
Ionizing radiation
H
xd
H
D’H volume
fp
H+
H+
![Page 11: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/11.jpg)
HitSiH
it
itHititSiH
it
fσN
(t)Nfσ(t)NN
t
N
After Rashkeev et al. TNS 2002
De-passivation processes
pDHDH
pDHDHH
fNt
HfN
x
f
doxDHygH xtffkDf
oxyDHgSiHit tfftkDσNN
fitD
(fH > 0 for all x)(steady state)
(No saturation or annealingand traps at interface)
![Page 12: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/12.jpg)
Leakage paths
1 2
3
1
2
3
NMOS Drain-to-Source
NMOS D/S to NMOS S/D
NMOS D/S to NWELL
Defect build-up in STI creates leakage paths in CMOS ICs.
CMOS inverters
2 and 3 are inter-device leakage
![Page 13: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/13.jpg)
NMOS drain-to-source leakage
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0k
100k
500k
No
rm. d
rain
cu
rren
t [A
/m
]
gate-to-source bias [V]
VG = 1.32V20 rad/s
Polysilicongate
N+ drain
N+ Source
LeakageLeakage
Polysilicon gate
N+ drain
N+ Source
LeakageLeakage
Polysilicongate
N+ drain
N+ Source
LeakageLeakage
Polysilicon gate
N+ drain
N+ Source
LeakageLeakage
130 nm bulk CMOS
Increasingtotal dose
![Page 14: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/14.jpg)
Parasitic leakage model
“as drawn” “edge”
Weff
tOX-eff
VTH-eff“as drawn” “edge”
Weff
tOX-eff
VTH-eff
• Parasitic “edge” device modeled as MOSFET operating in parallel with “as drawn” FET.
• “Effective” parameters for “edge” device are extracted from data.
![Page 15: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/15.jpg)
Extracting electrical characteristics
ID“edge”(post) ≈ IDtotal(post) – IDtotal(pre)
ID“edge”(post)
IDtotal(post)
IDtotal(pre)
Two assumptions:
1. IDtotal(pre) ≈ ID“as-drawn”(pre)
2. ID“as-drawn”(post) ≈ ID“as-drawn”(pre)
![Page 16: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/16.jpg)
“Edge” Capacitor
Prior to radiation exposure, the
MOS capacitor of the “edge” device has small dimensions, W and tox
STI
Weff tox-eff
++
++
![Page 17: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/17.jpg)
++
“Edge” Capacitor
Upon radiation exposure, the “edge capacitor is degradedand the dimensions enlarged.
STI
Weff tox-eff
++
++
STI
Weff
tox-eff
++
+ ++
++
Increasingtotal dose
![Page 18: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/18.jpg)
++
“Edge” Capacitor
Increased defect buildup in theSTI sidewall leads to further increases in W and tox, until inherent limitations are met.
STI
Weff tox-eff
++
++
STI
Weff
tox-eff
++
+ ++
++
Increasingtotal dose
++
STI
Weff tox-eff
++
+ ++
+++
++++
++++
+++
+
![Page 19: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/19.jpg)
2D simulations
Not = 2×1012 cm-2 Not = 5×1012 cm-2 Not = 7×1012 cm-2
Simulations show how increased Not along sidewall increases the width of the channel and the capacitor thickness
Weff Weff
Weff
![Page 20: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/20.jpg)
New Test Structure
Devices designed by Faccio and fabricated at STMicro enable measurements on sidewall capacitor.
•1.3 um
•90 um
overlap
Pre-rad
![Page 21: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/21.jpg)
Parameter extraction
1.00E-16
1.00E-14
1.00E-12
1.00E-10
1.00E-08
1.00E-06
1.00E-04
-0.5 0 0.5 1 1.5
gate bias (V)
drai
n cu
rren
t (A
) 100 krad
500 krad
1 Mrad
Series1
Series2
Series3
Expon.(Series1)Expon.(Series2)Expon.(Series3)
Img (1 Mrad)
2 1
3
4
Img (500 krad)
Img (100 krad)
1. Weff increases withTID (increased strong -inv current)
2. Not and Nit increase with TID (shift in threshold voltage)
3. Nit and tox increasewith TID (reducedsubthreshold slope)
4. Not increasewith TID (shifts inmidgap voltages)
![Page 22: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/22.jpg)
Simultaneous equations
dsF
22
-qV /kTq2φ /kTsi a ids S F eff
F
e f
a
f ε qN kT nI (φ = 2φ ) =μ e (1-
L 4φ
We )
q N
si a B OTOX-efmg FB F f
OX
2ε qN φ - qV = V + φ +
ε
Nt
ITb
OX-ef
XO f
C + qn = 1+ ( )
ε
Dt
OX dsds eff gs TH-ef
eff
OX-efds
ff
ε VI = μ (V - V ) -
tV
L 2
W
1.
2.
3.
4.Solving simultaneouslyenables extraction ofparameters and defectlevels at each TID value
![Page 23: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/23.jpg)
Parameters and sidewall defects
VTH-eff (V) tOX-eff (nm) Weff (nm)
pre N/A N/A N/A
100 krad 0.194 17.9 43.7
500 krad 0.180 17.9 99.9
1 Mrad 0.169 20.0 128.1
Parameters
Defects
Not (cm-2) NIit (cm-2)
100 krad – 500 krad 8.5×1010 6.4×1010
100 krad – 1 Mrad 1.0×1011
1.2×1011
![Page 24: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/24.jpg)
Inter-device leakage
Aluminum line Polygate
Polygate
p+ p+n+n+
Aluminum gate
+++ + + + + + + + + + + + +
++
n+ p+n+
Leakage path
n+
p+ n+
n-well
n-well
VDD0V
Aluminum line Polygate
Polygate
n+ n+n+n+
Aluminum gate
+++ + + + + + + + + + + + +
++
n+ n+ n+n+
Aluminum line Polygate
Polygate
n+ n+n+n+
Aluminum gate
+++ + + + + + + + + + + + +
++
n+ n+ n+n+
Leakage path
VDD0V
n+ D/S to n-well n+ D/S to n+ D/S
Charge build-upin STI base
![Page 25: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/25.jpg)
Field oxide transistors
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
0 10 20 30 40
gate-to-source bias [V]
dra
in c
urr
en
t [A
]
50k
100k
500k
130 nm bulk CMOS
noisefloor
p-well
STIn+ n+
n-well
-n+ D/S
n+ D/S n-well
n-well
Metal 1
Metal 1
++++
![Page 26: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/26.jpg)
Field oxide capacitors
1500 Single Cell FOXCAPs in parallel
gate area of individual cell ~ 7.4 μm x 11.4 μm
Single cell
0.97
0.98
0.99
1
-40 -30 -20 -10 0 10 20 30
Gate Voltage [V]
Nor
mal
ized
Cap
actia
nce
Pre-rad
Rad-inducedshift
After 1-weekanneal
0.97
0.98
0.99
1
-40 -30 -20 -10 0 10 20 30
Gate Voltage [V]
Nor
mal
ized
Cap
actia
nce
Pre-rad
Rad-inducedshift
After 1-weekanneal
130 nm data
![Page 27: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/27.jpg)
Defect build-up in STI base
Total Dose [krd(Si)]
Def
ect
s [c
m-2
]
Defect build-up is:
1. Greater for higher oxidefields (consistent w/ fy)
2. Linear with dose(no saturation … yet)
![Page 28: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/28.jpg)
Comparison to other isolation technologies (Not)
Device tox (nm) Type Area (cm2) ∆Vot (V) K (x 103)
FOXCAP 320 p 0.0023 6.5 63.5
RF25 600 p 0.0012 4.175 11.6
XFCB 600 p 0.0070 6.12 17
E4403/W21* 1080 n 0.030 7.7 33.01
SIMOX 370 n 0.022 2.2 16.07
*data taken after 20 krad(SiO2) exposures
**radiation bias is 0V for all devices
yotox
g
2ox
ot ffε
qk
Dt
ΔVK
![Page 29: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/29.jpg)
Sidewall vs. Base Comparison (Not)
01E+162E+163E+164E+165E+166E+167E+168E+16
100 400 700 1000Total Ionizing Dose (krad)
No
rmal
ized
No
t
STI sidewall
STI base
Indicates saturation in defect buildup
500 k 1000k
STI sidewall .0147 .0068
STI base .0109 .0094
otyff
![Page 30: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/30.jpg)
Sidewall vs. Base Comparison (Nit)
0
1E+16
2E+16
3E+16
4E+16
5E+16
6E+16
7E+16
100 400 700 1000
TID (krad)
NIT
(n
orm
. to
ox
ide
thic
kn
ess
)STI sidewall
STI base
![Page 31: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/31.jpg)
Other Work
• Separation of switch state defects in thick isolationoxides using frequency dependent charge pumping
• Packaging issues
![Page 32: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/32.jpg)
Gate sweep data
12 umbase
collector
gate
emitter
12 umbase
collector
gate
emitter
Nss
Nss
Increased current is caused by switching state buildup (Nss) whichis composed of both interface and border traps
![Page 33: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/33.jpg)
Separation of Switching States
Indicates border traps
![Page 34: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/34.jpg)
Packaging IssuesGate Sweep (Crane)
1.E-09
1.E-08
1.E-07
1.E-06
-100 -80 -60 -40 -20 0
Vg (V)
Ib (
A)
sealed @ 30krad
unsealed @ 30Krad after 8 days• Recent testing showed
3x increase in Nit in GLPNP devices packaged with sealed gold plated kovar lids than packages with taped-on lids.
ΔNot (cm-2) ΔNit (cm-2)
Unsealed ~1.7x1011 ~0.8x1011
Sealed ~1.4x1011 ~2.5x1011
![Page 35: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/35.jpg)
It’s a hydrogen problem
• As sealed lid is removed, H2 moves quickly out of the package and a concentration gradient is established for the remaining H2 in the oxide to diffuse out, thus reducing Nit generation.
100.00000.001917. Xenon
100.00000.000516. Krypton
100.00000.006415. NH3
100.00000.001314. Fluorocarbons
100.00000.003313. Tot. HC and Org.
100.00000.135212. Carbon Dioxide
100.00000.003211. Argon
100.00000.132610. Oxygen
100.00000.00009. Carbon Monoxide
100.000098.25088. Nitrogen
100.00000.00007. Neon (22)
100.00000.00146. Neon (20)
0.50000.09685. Water
100.00000.00584. Methane
100.00000.00143. Helium (4)
100.00000.00002. Helium (3)
100.00001.35931. Hydrogen
LIMIT in %
Volume % (1%=10,000ppm)
GASSES ANALYZED
100.00000.001917. Xenon
100.00000.000516. Krypton
100.00000.006415. NH3
100.00000.001314. Fluorocarbons
100.00000.003313. Tot. HC and Org.
100.00000.135212. Carbon Dioxide
100.00000.003211. Argon
100.00000.132610. Oxygen
100.00000.00009. Carbon Monoxide
100.000098.25088. Nitrogen
100.00000.00007. Neon (22)
100.00000.00146. Neon (20)
0.50000.09685. Water
100.00000.00584. Methane
100.00000.00143. Helium (4)
100.00000.00002. Helium (3)
100.00001.35931. Hydrogen
LIMIT in %
Volume % (1%=10,000ppm)
GASSES ANALYZED
H2
H2
H2
H2
H2
H2H2
H2
H2
H2
H2
H2
H2
H2H2
H2
H2
H2
H2
H2
H2
H2 H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2H2
H2H2
H2 H2H2
H
H
H
H
H
H2 ~ 1.3%
H2
H2
H2
H2
H2
H2H2
H2
H2
H2
H2
H2
H2
H2H2
H2
H2
H2
H2
H2
H2
H2 H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2H2
H2H2
H2 H2H2
H
H
H
H
H
H2 ~ 1.3%
ox
Si
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2 H2
H2
H2
H2
H2
H2
H2
H2
H2 H2
H2
H2
H2
H2<<1.3%
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2H2
H2
H2
H2
H2
H
H
H
H
H
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2 H2
H2
H2
H2
H2
H2
H2
H2
H2 H2
H2
H2
H2
H2<<1.3%
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2
H2H2
H2
H2
H2
H2
H
H
H
H
H
![Page 36: MURI Total Ionizing Dose Effects in Bulk Technologies and Devices Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton.](https://reader035.fdocuments.net/reader035/viewer/2022062801/56649e2c5503460f94b1b452/html5/thumbnails/36.jpg)
Another time dependent process
Results shows time dependence of Nit build-up related hydrogen out diffusion … we are working on the rate equations for this
Peak Base Current Vbe = 0.5V, 30Krad
0.0E+00
2.0E-08
4.0E-08
6.0E-08
8.0E-08
1.0E-07
1.2E-07
1.4E-07
1.6E-07
seal (30K) 1h (30K) 13h (30K) 7d (30K)
Time
Ib (
A)
lid off
taped kovar
taped ceramic
Not (cm-2) Nit (cm-2)
Sealed ~1.7x1011 ~2.4x1011
Unsealed 1hr
~1.6x1011 ~1.5x1011
Unsealed 13hrs
~1.6x1011 ~6.9x1010
Unsealed 7days
~1.6x1011 ~6.1x1010