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MSR in Diamond
1. Natural diamond 2. Synthetic Diamond3. Synchrotron characterisation4. Muon Spin Rotation studies5. Coherence
SH Connell, K Bharuth-Ram, S Cox
University of Johannesburg, Univ. of KwaZulu-Natal, Rutherford Appleton Lab
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5 mm
"…. It seems, indeed, to be a general truth, that there are comparatively few
diamonds without cavities and flawsand that this mineral is a fouler
stone than any other used in jewelry …."
Sir David Brewster 1862
Courtesy J Hansen - Hansen Future Materials
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This is all changing …….
… diamond for high tech applications
The Star of Africa ~ 50 ct CLEO diamond tracker - OSU
Bentdiamond
ESRF
“ … the dawn of diamond electronics has arrived …"Element Six MD, Christian Hultner 24-02-2005
“… a crucial new role for diamond in an ultra-high technology area is emerging …”
SYNCHROTRON RADIATION NEWS, Vol. 18, No. 1, 2005
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Diamond
IR Spectra P1 nitrogenpeak at 1130 cm-1
HPHT and SC-CVD
(many HPHT and SC-CVD)
Number Year Reference
123 1990 F Bridges et al in J. Phys Cond. Mat.,2 (1990) 2875-2928
300+ 1998 AM Zaitsev et al in Handbook of Industrial Diamond and Diamond Films, Dekker, New York, (1998)
Consider absorption, luminescence and EPR centresVery complex …..
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Electronic grade SC-CVD(~100 GBP /mm3)
Optical grade PC-CVD(~25 GBP /mm3)
Nano diamond(~1 $ /cm3)
CVD diamond
Properties (at best)
1. Substitutional N, B < few ppb2. CCD ~ 1mm3. Combined mobility ~ theoretical4. Best case : Residual strain ~ 10-6 5. Plates 5 – 10 mm sides
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Properties (at best)
1. Substitutional N, B ~ few ppb2. Best case : Residual strain ~ 10-8 3. Plates 5 – 10 mm sides
HPHT diamond
Low Strain IIa HPHT (~1000 €/mm3)
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Co
mb
ine
d M
ob
ilit
y (
cm
2/V
s)
Bandgap (eV)
Study•Charge carrier dynamics
•Near surface defects
•Contacts•Electrically active defects
“Electronic" diamond
> 2 s, CCD > xmaterial
Intrinsic p-type? … n-type
c high combined mobility, g wide band gap, Eb high breakdown field, high resistivity high thermal conductivity, broad spectral band,r low relative permeabilitynv very radiation hard
FoMvarious)
Diamond >> Si8000 x
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“Optical” Diamond
high thermal conductivity,
low linear X-ray absorption,
low thermal expansion
x500
SiliconDiamond
1
μασ
For Silicon : liquid N2 cooling works up to 400 W/mm2
For FEL’s: 10-100 GW/pulse (tpulse = 100fs)Response to transients important
Eg. Monochromator for Synchrotron X-rays
Thermal Diamond (0.07% 13C) Silicon Copper
Diffusivity (cm2/s) 18.5 0.86 1.25
PRB42(1990)1104 – T Anthony et al
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Optical microscope White beam topograph
UVluminescence
Incr
easi
ng
qu
alit
y
Improvements in Diamond Synthesis
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30/11/05
Courtesy J Hansen - Hansen Future Materials
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top
middle bottom
Images from Growth program of the DTC
AboveWireframe of growth sectors, schematic
BelowPhoto, UV Luminescence 1-3
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Clockwise
Visible image
Birefringence image
UV - luminescence
WB X-ray Topograph
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HPHT vs CVDTechniques are complimentary – both are necessary
1. CVD growth conditions cold for diamond – allow better control of impurities however, defects can freeze in.Leads to purer diamond (c<1ppb), but residual strain is compromised (bundles of dislocations emanating from defects in substrate, maybe more still >10-6).Niche is Electronic Applications
2. HPHT growth conditions hotter, and in the pressure capsule its more difficult to control impurities, growth is in “annealing” conditions.Leads to low strain diamond ~10-8, but more impurities, c<10ppb.Niche is Optical Applications
HPHT CVD
White Beam Topographs - In each case illustrative samples (not the best available)
Situation evolves
DRM17(2008)262
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E = 14.413 keV
Δλ/λ 10-8 ( 0.0023”)
0.18”
Si (975), |b| 40
Si (111)
Si (111)
Ge (331) CRL
Si (975), |b| 40Si (111), |b| 18.3
detector
diamond (400)diamond (400)
ESRF/ID18
High-resolution diffractometry set-upHigh-resolution diffractometry set-up
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h 1 mm
footprint = 1 x 0.4 mm
WHITE BEAM TOPOGRAPHY and Rocking Curve Broadening
HPHT with inclusion
fit after convolution “defects broadening” “defects broadening” function
-4 -2 0 2 4 6
0.01
0.02
0.05
0.1
0.2
0.5
1
FWHM0.07 ’’
FW20%M0.14 ’’
FW2%M0.48 ’’
-4 -2 0 2 4 6
1000
5000
10000
50000
100000.
500000.
1. 106
-4 -2 0 2 4 6
1000
5000
10000
50000
100000.
500000.
1. 106
-6 -4 -2 0 2 4 6
0.001
0.005
0.01
0.05
0.1
0.5
1
- theo * app
- exp
-6 -4 -2 0 2 4 6
0.01
0.02
0.05
0.1
0.2
0.5
1
● exp
- fit Δd/d =
1.2 x 10-5
arcsecs
arcsecsarcsecs
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position
position
width
width
height
height
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Micrometer scaled resolved X-ray diffraction
image of diamond
0.5o x 10-3
3 x 104
0 x 104
+4o x 10-3
-4o x 10-3
2.5o x 10-3
f(FWHM)
f(R)in a.u.
f(q)
Bendable Monochromator
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Quantificationof strain at the
10-8 level E =12 keV Si (444) C* (115)
rrd
dtanr B
perfB
maxI
I
dR
d
wp
arc secs
Working point on the non-dispersive double crystal reflectivity curve
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Also with this very high strain sensitivity
a rather homogenous zone is present,there crystal quality close to that of
silicon
MPWT Bragg
20keV, Si [800] C* [800]
Δd/d > 1.2 10-8
MPWT Bragg
12keV, Si [444] C* [115]
Δd/d > 4 10-8
WBTLaue case
1 mm
scratches
dislocations
Increasing strain sensitivity
ESRF Newsletter
45(2007))27
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1 mm
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-220 and 220-reflections
sample dimension 4x4 mm2
The crystal quality seen with the strain sensitivity of white beam topography is very good! No macroscopic defects like dislocations are
visible.White beam topographs in
transmission
Dislocation free
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Quantum Diamond
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p+
e-
+
e-H Mu
.999 mr (me) .995
.529 A0 (A) .531
-13.59 E0 (eV) -13.54
1.42 0 (GHz) 4.46
Why study Muonium ?
1. Mu chemically similar to H2. Dynamics are different3. Reconcile Mu, H studies4. Study quantum diffusion
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Focus on Hydrogen in diamond
Observations
• Diamonds are always contaminated with H in some
form
• Passivates acceptors and dopants
• Compensates deep recombination centres
• Possibly a mechanism to generate extended defects.
• H role in surface conductivity
• Possible role in shallowing of donor states –
Hn-X complexes
• “MSR only unambiguous probe” – MA Stoneham in “The Properties
of Diamond”
•Traps at the NV centre NVH
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The search for shallow donors in diamond
Elemental : • N - Ed ~ 1700 meV, also deep• P - Ed ~ 550 meV, e ~ 200 cm2/V, probably attracts defects
Molecular :
Many theoretical suggestions Bond compression shallows state • N-B-N• N-H-N • N-O• Hn-X
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HT
H2*
H4*
E
0
Diamond HBC
HBC
H2* di-HBC
H4*
Dislocation dipole
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Typical MSR in Diamond
CN ~ 100 ppm
CN ~ 1 ppm
CN ~ 1 ppm
CN ~ 1 ppm
CN ~ 1 ppm
CN ~ 10 ppb
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TF MSR for Tetrahedral Muonium - MuT
Beating of the two closely spaced precession frequencies 12 and 23
Note the damping of the oscillations
Extract the depolarisation rate (T)
(T)
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Four measurements of the Muonium Diffusion
1. TF Methods
a. Ensemble dephases by different arrival times at traps.
• Boron Impurities
• Vacancies
b. Ensemble dephases due to motion against a background of randomly oriented moments
• 13C enriched diamond
2. LF Methods
a. Depolarisation by spin-lattice relaxation
• 13C enriched diamond
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Wave-like motion
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1. Assume deep trapping at B after rapid diffusion
2. Observation of passivation
3. Observation of fast motion, then power law
transition to slower hop rates (T-2)
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1. Assume deep trapping at V after rapid diffusion
2. Observation of fast motion, then power law
transition to slower hop rates (T-2)
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1. Assume deep trapping at V after rapid diffusion
2. Observation of fast motion, then power law
transition to slower hop rates (T-1)
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1. Motional narrowing for inhomogeneous background of randomly oriented nuclear spins
2. Observation of fast motion, then power law
transition to slower hop rates (T1.3)
TF MSR in a 13C diamond
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LF MSR in a 13C diamond
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LF MSR in a 13C diamond
Data Analysis by Redfield MethodFit this expression to all Time Differential LF spectra at all temperatures simultaneously, and extract the nuclear hyperfine constant and hop rate.
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LF MSR in a 13C diamond
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LF MSR in a 13C diamond
DMu ~ 2.4 x 10-6 cm2/sc.f. DH ~10-12 cm2/s
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LF MSR in a 13C diamond
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LF MSR in a 13C diamond
Conclusions
1. The spin relaxation rate, T1-1, does have a power law behaviour, but
this is due to a change in the nuclear hyperfine constant rather than the hop rate. As the temperature increases, the muonium localises. This could be the onset of the MuT MuBC transition.
2. The hop rate is very high : 6 x 1010s-1. It is also almost constant in temperature over the range studied. This is consistent with previous conclusion of quantum diffusion.
3. Apart from this general agreement, the results of the LF measurements do not fully reconcile with the TF measurements.
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Possible MuBC thermal ionisation
MuT MuBC MuBC+
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Conclusions
1. MuT MuBC transition observed in LF for the first time with the correct activation energy of 0.476eV.
2. The transition MuT MuBC occurs faster than the trapping of MuT at nitrogen centres at high temperatures. This supports the idea that MuT must first localise before it can convert.
3. If MuBC is ionising, its rate is faster than 2 x 108s-1.
4. This would also imply the level of MuBC in the gap is 0.60 – 1.80 eV (dependant on data analysis model)
5. There is still the possibility (very small) that MuBC has become mobile, accounting for its depolarisation. (Recent measurement to higher T to check this).
Possible MuBC thermal ionisation
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MSR in Diamond
SH Connell, K Bharuth-Ram, S Cox
University of Johannesburg, Univ. of KwaZulu-Natal, Rutherford Appleton Lab
ElectronicOptical
Quantum