MRF9045NR1, 945 MHz, 45 W, 28 V Lateral N-Channel Broadband ...

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MRF9045NR1

1RF Device DataFreescale Semiconductor

RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications in 28 voltbase station equipment.

• Typical Performance at 945 MHz, 28 VoltsOutput Power � 45 Watts PEPPower Gain � 19 dBEfficiency � 41% (Two Tones)IMD � -31 dBc

• Integrated ESD Protection

• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power

Features• Excellent Thermal Stability• Characterized with Series Equivalent Large-Signal Impedance Parameters• Dual -Lead Boltdown Plastic Package Can Also Be Used As Surface

Mount.• 200�C Capable Plastic Package• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage VDSS - 0.5, +65 Vdc

Gate-Source Voltage VGS - 0.5, +15 Vdc

Total Device Dissipation @ TC = 25°CDerate above 25°C

PD 1771.18

WW/°C

Storage Temperature Range Tstg - 65 to +150 °C

Operating Junction Temperature TJ 200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (1) Unit

Thermal Resistance, Junction to Case RθJC 0.85 °C/W

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model M2 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 °C

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTFcalculators by product.

Document Number: MRF9045NRev. 12, 9/2008

Freescale SemiconductorTechnical Data

MRF9045NR1

945 MHz, 45 W, 28 VLATERAL N-CHANNEL

BROADBANDRF POWER MOSFET

CASE 1265-09, STYLE 1TO-270-2PLASTIC

© Freescale Semiconductor, Inc., 2008. All rights reserved.

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2RF Device Data

Freescale Semiconductor

MRF9045NR1

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS � � 10 μAdc

Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS � � 1 μAdc

Gate-Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS � � 1 μAdc

On Characteristics

Gate Threshold Voltage(VDS = 10 Vdc, ID = 150 μAdc)

VGS(th) 2 2.8 4 Vdc

Gate Quiescent Voltage(VDS = 28 Vdc, ID = 350 mAdc)

VGS(Q) 3 3.7 5 Vdc

Drain-Source On-Voltage(VGS = 10 Vdc, ID = 1 Adc)

VDS(on) � 0.22 0.4 Vdc

Forward Transconductance(VDS = 10 Vdc, ID = 3 Adc)

gfs � 4 � S

Dynamic Characteristics

Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Ciss � 70 � pF

Output Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss � 38 � pF

Reverse Transfer Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss � 1.7 � pF

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two-Tone Common-Source Amplifier Power Gain(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,f1 = 945.0 MHz, f2 = 945.1 MHz)

Gps 17 19 � dB

Two-Tone Drain Efficiency(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz)

η 38 41 � %

3rd Order Intermodulation Distortion(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD � -31 -28 dBc

Input Return Loss(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL � -14 -9 dB

Two-Tone Common-Source Amplifier Power Gain(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz)

Gps � 19 � dB

Two-Tone Drain Efficiency(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz)

η � 41 � %

3rd Order Intermodulation Distortion(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz)

IMD � -31 � dBc

Input Return Loss(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz)

IRL � -13 � dB

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MRF9045NR1


Figure 1. MRF9045NR1 930-960 MHz Broadband Test Circuit Schematic

Z3 0.14″ x 0.32″ MicrostripZ4 0.47″ x 0.32″ MicrostripZ5 0.16″ x 0.32″ x 0.62″ TaperZ6 0.18″ x 0.62″ MicrostripZ7 0.56″ x 0.62″ MicrostripZ8 0.33″ x 0.32″ MicrostripZ9 0.14″ x 0.32″ MicrostripZ10 0.36″ x 0.08″ MicrostripZ11 1.01″ x 0.08″ MicrostripZ12 0.15″ x 0.08″ MicrostripZ13 0.29″ x 0.08″ Microstrip

B1, B2 Short Ferrite Beads, Surface MountC1, C7, C13, C14 47 pF Chip CapacitorsC2, C8 2.7 pF Chip CapacitorsC3 3.9 pF Chip CapacitorC4, C5, C8, C9 10 pF Chip CapacitorsC6, C15, C16 10 μF, 35 V Tantalum Surface Mount CapacitorsC10 2.2 pF Chip CapacitorC11 4.7 pF Chip CapacitorC12 1.2 pF Chip CapacitorC17 220 μF, 50 V Electrolytic CapacitorL1, L2 12.5 nH InductorsZ1 0.20″ x 0.08″ MicrostripZ2 0.57″ x 0.12″ Microstrip

B1

C1

RF

INPUT

RF

OUTPUT

VGG VDD

C6

L1

Z5Z4Z3

C2

Z2Z1 Z7

C8

C9

Z8 Z9 Z10 C13

C14

B2

C15 C16 C17

C4

C5

Z6

+ +C7

++

C12

C3

Z11 Z12 Z13

L2

DUT

C10 C11

Figure 2. MRF9045NR1 930-960 MHz Broadband Test Circuit Component Layout

CU

T O

UT

AR

EA

MRF9045MR1 Ground

C1C2

C3 C4

C5

C6

C7

C8C9

C10 C11 C12 C13

C14 C15 C16

L1 L2

A1 A2

B1B2

WB

1

WB

2

Ground

Vbias VsupplyC17

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductorsignature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will haveno impact on form, fit or function of the current product.

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4RF Device Data


MRF9045NR1

Figure 3. MRF9045NR1 930-960 MHz Broadband Test Circuit Schematic

Z1 0.260″ x 0.060″ MicrostripZ2 0.240″ x 0.060″ MicrostripZ3 0.500″ x 0.100″ MicrostripZ4 0.215″ x 0.270″ MicrostripZ5 0.315″ x 0.270″ MicrostripZ6 0.160″ x 0.270″ x 0.520″ TaperZ7 0.285″ x 0.520″ MicrostripZ8 0.140″ x 0.270″ MicrostripZ9 0.450″ x 0.270″ MicrostripZ10 0.250″ x 0.060″ MicrostripZ11 0.720″ x 0.060″ MicrostripZ12 0.490″ x 0.060″ MicrostripZ13 0.290″ x 0.060″ MicrostripBoard Taconic RF-35-0300, εr = 3.5

B1 Short Ferrite BeadB2 Long Ferrite BeadC1, C8, C13, C14 47 pF Chip CapacitorsC2 0.4-2.5 pF Variable Capacitor, Johanson GigatrimC3 3.6 pF Chip CapacitorC4 0.8-8.0 pF Variable Capacitor, Johanson GigatrimC5, C6, C9, C10 10 pF Chip CapacitorsC7, C15, C16 10 μF, 35 V Tantalum Chip CapacitorsC11 7.5 pF Chip CapacitorC12 0.6-4.5 pF Variable Capacitor, Johanson GigatrimC17 220 μF Electrolytic Chip CapacitorL1, L2 12.5 nH Surface Mount InductorsWB1, WB2 10 mil Brass Wear Blocks

B1

C1

RF

INPUT

RF

OUTPUT

VGG VDD

C7L1

Z5Z4Z3

C2

Z2Z1 Z7

C10

C9

Z8 Z9 Z10 C13

L2

C14

B2

C15 C16 C17

C6

C5

Z6

+ +C8

++

C11C4

C12

Z11 Z12 Z13

C3

Figure 4. MRF9045NR1 930-960 MHz Broadband Test Circuit Component Layout

CU

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AR

EA

WB

1

WB

2C1

C2C3

C5

C6

C7

C8

C9C10

C4 C11 C12

C13

C14

C15 C16

C17

L1 L2

Rev−02900 MHzMRF9045MB

OUTPUTINPUT

VGG

VDD

DUT

B1 B2

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductorsignature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will haveno impact on form, fit or function of the current product.

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MRF9045NR1


TYPICAL CHARACTERISTICS

960

12

20

−38

50

IRL

IMD

f, Frequency (MHz)

Figure 5. Class AB Broadband CircuitPerformance

Gps

, P

OW

ER

GA

IN (

dB) 18 40

17 35

16 −30

19 45

15 −32

14 −34

13 −36

955950945940935930

VDD = 28 Vdc

Pout = 45 W (PEP)

IDQ = 350 mA

Two−Tone Measurement

100 kHz Tone Spacing

100

17

21

IDQ = 525 mA

420 mA

VDD = 28 Vdc

f1 = 945 MHz

f2 = 945.1 MHz

Pout, OUTPUT POWER (WATTS) PEP

Figure 6. Power Gain versus Output Power

Gps

, P

OW

ER

GA

IN (

dB)

350 mA

280 mA

20.5

20

19.5

19

18.5

18

17.5

1010.1 100

−15

IDQ = 280 mA

350 mA

VDD = 28 Vdc

f1 = 945 MHz,

f2 = 945.1 MHz


Figure 7. Intermodulation Distortion versusOutput Power

INT

ER

MO

DU

LAT

ION

DIS

TO

RT

ION

(dB

c)IM

D,

420 mA

525 mA

−20

−25

−30

−35

−40

−45

−50

−55

1010.1

100

−10

1

7th Order

VDD = 28 Vdc

IDQ = 350 mA

f1 = 945 MHz

f2 = 945.1 MHz


Figure 8. Intermodulation Distortion Productsversus Output Power

INT

ER

MO

DU

LAT

ION

DIS

TO

RT

ION

(dB

c)IM

D,

3rd Order

5th Order

−20

−30

−40

−50

−60

−70

−80

10

Figure 9. Power Gain and Efficiency versusOutput Power

η

Gps

−10

−18

−14

, D

RA

IN�

EF

FIC

IEN

CY

(%

)

IMD

, IN

TE

RM

OD

ULA

TIO

N

DIS

TO

RT

ION

(dB

c)

IRL,

IN

PU

T R

ET

UR

N

LOS

S (

dB)−12

−16

100

20

0

50

ηVDD = 28 Vdc

IDQ = 350 mA

f = 945 MHz

Pout, OUTPUT POWER (WATTS) AVG.

Gps

, P

OW

ER

GA

IN (

dB)

14

30

10

20

12 10

40

1 10

Gps

22

16

18

60

, D

RA

IN E

FF

ICIE

NC

Y (

%)

η

0.1

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6RF Device Data


MRF9045NR1

TYPICAL CHARACTERISTICS

0

5

10

15

20

25

30

35

40

45

50

55

60

65

70

22 24 26 28 30 32

VDD, DRAIN VOLTAGE (VOLTS)

Figure 10. Output Voltage versus Supply Voltage

Pou

t,

OU

TP

UT

PO

WE

R (

WA

TT

S)

PE

P

Pin = 0.3 W

Pin = 0.6 W

Pin = 1 W

IDQ = 350 mA

f = 945 MHz

Two−Tone Measurement

100 kHz Tone Spacing

Figure 11. MTTF Factor versus Junction Temperature

210

1011

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than ±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

1010

108

MT

TF

FA

CT

OR

(H

OU

RS

X A

MP

S2 )

90 110 130 150 170 190100 120 140 160 180 200

109

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MRF9045NR1


Figure 12. Series Equivalent Source and Load Impedance

fMHz

ZsourceΩ

ZloadΩ

930

945

0.81 - j0.25

0.85 - j0.05

2.03 + j0.09

2.03 + j0.28

VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP)

f = 945 MHz

Zo = 5 Ω

f = 930 MHz

f = 945 MHz

f = 930 MHz

ZloadZsource

Zsource = Test circuit impedance as measured from gate to ground.

Zload = Test circuit impedance as measured from drain to ground.

Zsource

Zload

Input

Matching

Network

Device

Under Test

Output

Matching

Network

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8RF Device Data


MRF9045NR1

PACKAGE DIMENSIONS

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MRF9045NR1


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10RF Device Data


MRF9045NR1

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MRF9045NR1


PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

12 Sept. 2008 • Data sheet revised to reflect part status change, including use of applicable overlay.

• Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 8-10. Corrected cross hatch pattern inbottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changedfrom Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDECStandard Package Number.

• Added Product Documentation and Revision History, p. 11

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12RF Device Data


MRF9045NR1

How to Reach Us:

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Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. �Typical� parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including �Typicals�, must be validated for each customer application bycustomer�s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.

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Document Number: MRF9045NRev. 12, 9/2008

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