MRAM Roadmap Proposal v.1.0 MRAM Roadmap Proposal v.1.0

2001. 4. 232001. 4. 23

We propose two categories of FAST MRAM and HIGH DENSITY MRAM.

· The 1st FAST MRAM introduction of 256Mb should be pulled in 2003, while the 256Mb DRAM is near the end of life by its cost model. (chip size </= 60mm2) · The 1st HIGH DENSITY MRAM introduction of 512Mb may be in 2003.

▶ Density

· FAST MRAM : 4x density, 2-year cycle to 2007, then may follow DRAM density after 2007. · HIGH DENSITY MRAM : Going on 4x density, 2-year cycle (or, 8x density 3-year cycle) with multiple stacking layers ▶ Feature size (half pitch)

· FAST MRAM : 2-year cycle to 2008, 3-year cycle after 2008, Following DRAM after 2008 · HIGH DENSITY MRAM : 2-year cycle through 2014

We propose two categories of FAST MRAM and HIGH DENSITY MRAM.

· The 1st FAST MRAM introduction of 256Mb should be pulled in 2003, while the 256Mb DRAM is near the end of life by its cost model. (chip size </= 60mm2) · The 1st HIGH DENSITY MRAM introduction of 512Mb may be in 2003.

▶ Density

· FAST MRAM : 4x density, 2-year cycle to 2007, then may follow DRAM density after 2007. · HIGH DENSITY MRAM : Going on 4x density, 2-year cycle (or, 8x density 3-year cycle) with multiple stacking layers ▶ Feature size (half pitch)

· FAST MRAM : 2-year cycle to 2008, 3-year cycle after 2008, Following DRAM after 2008 · HIGH DENSITY MRAM : 2-year cycle through 2014

MRAM Roadmap Proposal v.1.0MRAM Roadmap Proposal v.1.0

MRAM Roadmap

MRAM Roadmap

64G

16G

1G

4G

256M

2000

Den

sit

y(G

en

era

tion

at

Pro

du

cti

on

)

Year of Production

8G

512M

2G

32G

2002 2004 20142012201020082006

High Density MRAM

Fast MRAM

DRAM

128G

128M

64M

Fast MRAM High Density MRAM DRAM

1999

IBM-Infineonpress release

MRAM Roadmap

MRAM Roadmap

Fast MRAM High Density MRAM DRAM

500

250

70

130

30

2000

Featu

re S

ize (

nm

)

Year of Production

180

50

100

350

2002 2004 2014201220102008200615

Tech

nolo

gy N

od

e -

DR

AM

Half

Pit

ch

(n

m)

500

250

70

130

30

180

50

100

350

15

Fast MRAM 2-Year Node Cycle

Saturated to DRAM3-Year Node Cycle

DRAM3-Year Node Cycle

IBM-Infineonpress release

High Density MRAM2-Year Node Cycle

Year of Production

10

0.1

Cell A

rea (

um

2)

1

2000 2002 2004 20142012201020082006

0.01

MRAM Roadmap

MRAM Roadmap

Fast MRAM High Density MRAM DRAM

Fast MRAM

DRAM

High density MRAM4F2

4F2

6F2

4F2

8F2

8F2

6F2

4F2

MRAM & DRAM Generations

Year of Production Technology

1/2 Pitch(nm)

1/2 Pitch(nm)

Cell Area Factor

Cell Area(um2)

Cell Area(um2)

1/2 Pitch(nm)

Cell Area Factor

Cell Area Factor

Cell Area(um2)

Fast MRAM

High Density MRAM

DRAM

Density(Generation at Production)

Density

Density

2001

-

130

-

0.14

-

-

8

-

-

512M

-

-

2002

180

115

8

0.10

0.25

250

8

4

0.26

-

128M

256M

2003

150

100

8

0.08

0.19

220

8

4

0.18

1G

256M

512M

2004

130

90

8

0.065

0.13

180

8

4

0.14

-

512M

1G

2005

110

80

8

0.038

0.09

150

6

4

0.10

2G

1G

2G

2008

60

60

6

0.022

0.032

90

6

4

0.022

6G

6G

16G

2011

40

40

4

0.0064

0.012

55*

4

4

0.0064

16G

16G

128G

2014

30

30

4

0.0036

0.004

32*

4

4

0.0036

48G

48G

2048G**

2006

90

70

8

0.029

0.068

130

6

4

0.065

-

2G

4G

2000

-

150

-

0.18

-

-

8

-

-

-

-

-

1999

-

180

-

0.26

-

-

8

-

-

256M

-

-

2007

75

65

6

0.025

0.048

110

6

4

0.034

4G

4G

8G

2009

50

50

6

0.015

0.026

80

6

4

0.015

8G

8G

32G

*65nm in 2010*45nm in 2012

**1024 G in 2013