MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches...

MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE

ENERGY EXTRACTIONDevelopment of

Semi-Conductor Switches

Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev, Knud Dahlerup-Petersen TE-MPE-EE


OUTLINE

S.C.E.E.: Why? Where? When? Current development and topologies IGxT x = B or C is the question Design Criteria 600 A SM18 Summarizing Questions Where are we today?


Reminder


WHY ? THREE DIFFERENT REASONS

1 - Demand coming from MSC group (SM18) for Extraction Systems : Fast (< 1 ms), High Current (10 kA, 30 kA and 14 kA), Medium Energy (4 – 5 MJ).

Fast (< 1 ms) means; can not be done with Electro-Mechanical Breakers!» Alternative: Semi-Conductors

2 - LHC: Increasing worry 600 A spare Energy Extraction Switches/Systems

Back-Up solution in case of major events or degrading… Maintenance (preventive and corrective) is time and resource consuming

3 – (HL-)LHC: Development of New Inner Triplet Magnets most likely will need Fast, High Current Energy Extraction Systems – In house knowledge and experience will be present!


WHERE & WHEN ?TWO MAIN LOCATIONS:

1 - SM18 for Extraction Systems : FRESCA HFM 10 kA circuit - 2016-2017 D Cluster 30 kA circuit - 2018 A Cluster 14 kA circuit - 2019

2 – LHC tunnel: Replacement of existing 600 A Energy Extraction Systems

UA and UJ33 areas radiation free – LS3 RR areas rad- tolerant version – LS3

2a - LHC: New Inner Triplet Magnets – LS ?


Current Development

1 – High Current for SM18: 10 kA – 30 kA

Design phase

2 – Medium Current for LHC tunnel 600 A

Test phase (Re-design)


Different Topologies

2 – Medium Current for LHC tunnel Redundant (min. 2 elements in series) No elements in parallel (600 ADC max) Bi-polar (current in both directions)

semi-conductor is mono-polar

1 – High Current for SM18: Not redundant (no elements in series) Many elements in parallel (~2kA per branch) Mono-polar (current in one direction)


Semi-Conductors candidates

IGBTIGCT

3.5 kA


Insulated Gate Bipolar Transistor (IGBT)

Developed based on (power) MOSFET technology in the 1980s Combines the power handling capability of the bipolar transistor and the

advantages of the isolated gate drive of the power MOSFET. It has the advantages of being a minority carrier device leading to good

performance in the on-state, even for high voltage devices. With the high input impedance of a MOSFET it can be driven On or Off with a very

low amount of power (voltage-driven). The voltage drop in the on-state for high current DC applications between 1.5 to

3.5 V

IT IS NOT A BI-POLAR DEVICE! Current only in one direction.


Integrated Gate-Commutated Thyristor (IGCT)

Developed in the 1990’s based on Gate-Turn-Off Thyristor (GTO) and the Gate Commutated Thyristor (GCT).

The IGCT is basically an improved GTO with also a four layer npnp structure with anode, cathode and integrated gate terminals. The integration of the gate terminals leads to extreme low coupling inductances allowing a faster turn-off process with lower losses.

The result is a combination of the strengths of both the GTO and the Insulated Gate Bipolar Transistor (IGBT) without the complex control unit of the GTO and the snubber-needs of the IGBT.

Voltage drop in on-state for high current DC applications between 1.5 V and 2.5 V


Design criteria 1

ReliabilityMajor failure causes due to

Thermal design (DC application) Device voltage rating - stray

inductances Cosmic Rays (FIT see next slide)

Forward losses (Overrating!)Commercial Availability


Design criteria 2

The Failures In Time (FIT) rate of a semi-conductor is the number of failures that can be expected in 109 hours of operation

or for 500 devices during 2 million hours (228 years) strongly dependent on the applied voltage

small dependence on temperature

Typical FIT numbers for IGCT: 100 & Gate driver: 200 => 300IGBT: 250 & Gate driver: 150 => 400


600 A


600A Energy Extraction Systems

202 systems installed in the LHC tunnel Corrector circuits with stored energy between 2.2 and

150 kJ

In 15 different locations; 8 x UA parallel service tunnel and 6 x RR and 1 x UJ tunnel

caverns

Systems developed in close collaboration between CERN and the Budker Institute of Nuclear Physics (BINP), Novosibirsk, Russia.

Reminder


Remember: Different Topologies



1 – High Current for SM18: Not redundant (no elements in series) Many elements in parallel (2kA per branch) Mono-polar (current in one direction)


Why worry after LS1?

This is not building 281


Why worry after LS1?

Still 50 spare breakers available Spare consumption rate (before LS1) approx. 10/year

5 years of “operation” Spare consumption rate (after LS1) ??????

< 5/year but not less than 2 !

Manufacturer closed premises at the end of 2012 and the production suspended

Breakers are now obsolete Spare Systems reduced from 23 to 7 due to water

incident in UA67. So far, unknown if and how much we can recuperate the damaged systems


Global planning 600 A EE Change (partially ?) to semiconductor-based switches, used

as static breakers IGBT (Insulated-Gate Bipolar Transistor) or IGCT (Integrated

Gate-Commutated Thyristor) R&D on-going / necessary:

2012 development and testing of mono-polar Lab version2013 development and testing of Bi-polar Lab version 2014/2015 Design, development and testing of prototype2016 Final Design: proto to series2017/2018 Market Survey/Tender


Achievements Based on IGCT (Integrated Gate-Commutated Thyristor)

R&D on-going: 2012 development and testing of mono-polar Lab version

2 IGCT and 1 Diode in series 2013 development and testing of Bi-polar Lab version

2 IGCT and 1 Diode in series + anti-parallel

2 IGCT and 1 Diode in series

IGBT study on goingCandidates found


IGCT semi-conductor


Monopolar IGCT 600 ADC Switch


Monopolar Switch Test Circuit


Energy Extraction 600A


On-State Characteristics Durchlassmessung für Anfrage CERN (10-064) bei 25°C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2.2 2.4 2.6 2.8 3 3.2 3.4

VF, VT in [V]

IF, IT

in

[A

]

IGCT Switchtwo IGCT + one diode) @ 25°C

Voltage drop at 85 ⁰C

2.7


single components @ 25°CDurchlassmessung für Anfrage CERN (10-064) bei 25°C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

0.6 0.7 0.8 0.9 1 1.1 1.2

VF, VT in [V]

IF, IT

in

[A

]

5SDD 51L2800 (DV 545.50) PP13.48 (5SPA 91W4599)

On-State Characteristics

Single Components @ 25°C


Bi-Polar IGCT 600ADC switch

Diode is needed to cover the reverse-voltage during extraction


Bi-Polar IGCT 600ADC switch


Electronics IGCT

Electronics comes from existing 600 A EE systems (3 cards modified by Bozhidar) Optical transmission of signals (Semi-Conductor type independent) Redundancy in electronics. One Interface PCB per IGCT in one branch


Energy Extraction 250A

0

50

100

150

200

250

0

50

100

150

200

250

0

50

100

150

200

250

14:38:16.335 14:38:16.345 14:38:16.355 14:38:16.365 14:38:16.375 14:38:16.385 14:38:16.395

Time

0

50

100

150

200

250

Input_Current

Upper_IGCT_Current

Dump_Res_Current

Voltage_Across

I, [A]

IIGCT, [A]

IDUMP, [A]

U, [V]


17:49:20.924 17:49:21.124 17:49:21.324 17:49:21.524 17:49:21.724 17:49:21.924 Time

-20

-15

-10

-5

0

5

10

15Currents, [A]

-20

-15

-10

-5

0

5

10

15Voltage, [V]

Input_CurrentUpper_IGCT_CurrentDump_Res_CurrentLower_IGCT_CurrentVoltage_Across

Transition pos to neg – 40A/s

Circuit Current

Dump Resistor Current

Voltage EE system

Current negative IGCT

Current positive IGCT

Less problems at 10A/s

and

Power Converter settings

can be optimised


Next steps 1 Choice of semi-conductor:

IGBT slightly higher forward losses compared to IGCT

Workaround possible by overrating the device

Available in Press-Pack or Modules Wide choice of manufacturers

(Infineon, ABB, Westcode)

Voltage driven («static» switch device «fail safe») Snubber capacitors and varistors needed Driver needed


Next steps 2 Choice of semi-conductor ctd.:

IGCT Lower forward losses Available in press pack only ABB and Mitsubishi are today the only manufacturers Current controlled («active» switch device.. less fail safe) Snubbers needed (Varistor) but simpler than IGBT Integrated driver


Next steps 3 For LHC application; any Semi-Conductor EE system will need

water-cooling Total forward losses: 3V x 600 A = 1800 W x 2 systems = 3.6 kW per rack Water cooling capacity in the tunnel areas available?

Power Converter Boost Voltage: enough to overcome extra voltage drop?

Seems ok for 200 oo 202 systems if UF is lower or equal to 3.5V

Power Converter 0 ampere crossing: can it be regulated better?

Desperate need for a designer!


Modular Design Independent of choice of semi-conductor:

Identical Electronics Chassis with optical in/output Predefined Power Chassis with either IGBT, either

IGCT switch, including driverseventually included dump-resistorSimilar as the power part of the EPC power converter

One water in- and outlet per rackWater-cooling topology is a lot(!) simpler (higher

reliability) for modules compared to press-packs


General

Rack-Layout


BudgetsChange (partially – only rad free areas) to solid state breakers

Semi-conductor technology EE systemsBudget for R&D?Budget for replacement of 202 systems IGBT: 5.8 MCHF Budget for replacement of 202 systems IGCT: 6.7 MCHF

Only UA/UJ areas (rad free) would be 75% of total

Plan B: New Electro-Mechanical Circuit Breaker Budget for replacement of 202 systems EM-CB: 5.1

MCHFSimilar problems as today to be expected

but before getting there.. development starting from scratch – Very time consuming and expensive study!


SM18


Remember: Different Topologies



1 – High Current for SM18: Not redundant (no elements in series) Many elements in parallel (2kA per branch) Mono-polar (current in one direction)


Parallelism - Design Highest available device is rated 5500A (IGCT)

or 4800 A (IGBT) But for DC applications this means 2500A in order to stay

in the SOA (Safe Operating Area) A5 surface dimensions to give an idea

For 10 kA this means roughly 4 devices parallel Major advantage: UF -25%

For 30 kA this means 12 devices parallel


Master-Slave drivers commercially available

• Up to 4 IGBTs in parallel: hardware commercially availableFor a larger number of IGBTs =>

Careful synchronising on the high level electronics side. Still to be investigated.


Parallelism - Design Transient processes commutating very fast very

high currents creates very high voltage spikes Stray inductance to be kept as low as possible

1 uH of non compensated stray inductance will lead to kV spikes

Important parameter to stay within design voltage

Need for intelligent geometrical mechanical designTrade-off efficient cooling & stray inductance

Need for multi-level snubber compensationIGCT is slower than an IGBT: smaller/less snubbers can

be used


SnubbersNeeded to reduce DV/Dt during switchingSeveral layers of snubber capacitors over:

the complete switch each semi conductor-branch each semi conductor


Simulations – electrical and thermal

Simulations should start as soon as possible Simulate parasitical capacitances and inductances

Narrow down semi-conductor brand and type and get pspice models

If not available create our own…


SM 18 Budgets EE switches

Fresca – HFM – 2nd circuit 10 kA Budget switch: 100 – 125 kCHFOperational 2016 !!!

Cluster D circuit 30 kA Budget switch: 300 – 350 kCHF Operational 2017? Tbc..

Horizontal Banc A circuit 14 kA Budget switch: 150 – 175 kCHF Operational 2019? Tbc..


Summarizing Questions

In spite of the already huge job done so far and the gathered knowledge and experience there are still important questions:

Paralleling large numbers of IGBTs or IGCTs. Geometric mechanical topology. Clear ideas up to 10kA (since it can fit to

one rack). 14-30kA circuits layout not so clear. Still to be investigated. Design will be Trade-off between efficient cooling & stray inductance.

Where to focus? Bus bars topology. For 30kA at 1.7 A/mm2 => 17650 mm2 =>42x42cm!

Water cooled bus bars ? Indirect cooling? Topology should be chosen also according to SM18 infrastructure

Switch-on-off criteria – No overcurrent during ramp-up? Will the last off-switching branch take all current (ns range)?


Where we are today?

Crucial point: continue only by ourselves (CERN re-inventing the wheel)

or Study existing installations in collaborating institutes

• 2016.. not much time => no time for trial-and-error• Main responsibility still LS1 and, after re-start, LHC operation• Not to copy but learning from their experiences• Desperate need for Electro-Mechanical CAD designer

• (preferably with plumbing experience)


SM18and/or LHC

Dump-Resistors


Compact Dump-Resistors

Development of Energy Absorbers for medium- to high energy applications :

• Compact design for use in LHC underground locations• Primary cooling by immersion into dielectric, heat-transfer liquid• Built-in liquid-to-water heat exchanger• Modular design to facilitate change of resistance value (typically

10 to 300 mOhm).• For energy absorption up to 10 MJ.• Development cost + prototype: 150 kCHF

• Agreement of principle for collaboration with BARC, India

MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches...

Documents

Transcript of MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches...