MOSFET CoolMOS™ P6 · 600V CoolMOS™ P6 Power Transistor IPB60R380P6, IPP60R380P6, IPA60R380P6,...

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CoolMOS™P6600VCoolMOS™P6PowerTransistorIPx60R380P6

DataSheetRev.2.2Final

PowerManagement&Multimarket

2

600VCoolMOS™P6PowerTransistorIPB60R380P6,IPP60R380P6,IPA60R380P6,

IPD60R380P6

Rev.2.2,2015-07-10Final Data Sheet

12

3

tab

D²PAKtab

TO-220 TO-220FP

tab

12

3

DPAK

DrainPin 2, Tab

GatePin 1

SourcePin 3

1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighterandcooler.

Features•IncreasedMOSFETdv/dtruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Veryhighcommutationruggedness•Easytouse/drive•Pb-freeplating,Halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)

ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 380 mΩ

Qg.typ 19 nC

ID,pulse 29 A

Eoss@400V 2.7 µJ

Body diode di/dt 500 A/µs

Type/OrderingCode Package Marking RelatedLinksIPB60R380P6 PG-TO 263

IPP60R380P6 PG-TO 220

IPA60R380P6 PG-TO 220 FullPAK

IPD60R380P6 PG-TO 252

6R380P6 see Appendix A

3


IPD60R380P6


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4


IPD60R380P6


2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

10.66.7 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 29 A TC=25°C

Avalanche energy, single pulse EAS - - 210 mJ ID=1.8A; VDD=50V; see table 12

Avalanche energy, repetitive EAR - - 0.32 mJ ID=1.8A; VDD=50V; see table 12

Avalanche current, repetitive IAR - - 1.8 A -

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V

Gate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation (Non FullPAK) TO-220, TO-252, TO-263 Ptot - - 83 W TC=25°C

Power dissipation (FullPAK) TO-220FP Ptot - - 31 W TC=25°C

Storage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque (Non FullPAK) TO-220 - - - 60 Ncm M3 and M3.5 screws

Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws

Continuous diode forward current IS - - 9.2 A TC=25°C

Diode pulse current2) IS,pulse - - 29 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°Csee table 10

Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°Csee table 10

Insulation withstand voltage forTO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min

1) Limited by Tj max. Maximum duty cycle D=0.752) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG

5


IPD60R380P6


3Thermalcharacteristics

Table3Thermalcharacteristics(NonFullPAK)TO-220Values


Thermal resistance, junction - case RthJC - - 1.5 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

Table4Thermalcharacteristics(FullPAK)TO-220FPValues


Thermal resistance, junction - case RthJC - - 4 °C/W -

Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

Table5ThermalcharacteristicsTO-252,TO-263Values


Thermal resistance, junction - case RthJC - - 1.5 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint

Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W

Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.

Soldering temperature, wave & reflowsoldering allowed Tsold - - 260 °C reflow MSL1

6


IPD60R380P6


4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table6StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA

Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=0.32mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=600,VGS=0V,Tj=25°C

VDS=600,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.3420.889

0.380- Ω VGS=10V,ID=3.8A,Tj=25°C

VGS=10V,ID=3.8A,Tj=150°C

Gate resistance RG - 7.8 - Ω f=1MHz,opendrain

Table7DynamiccharacteristicsValues


Input capacitance Ciss - 877 - pF VGS=0V,VDS=100V,f=1MHz

Output capacitance Coss - 42 - pF VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energy related1) Co(er) - 33 - pF VGS=0V,VDS=0...400V

Effective output capacitance, time related2) Co(tr) - 135 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=4.8A,RG=3.4Ω;seetable11

Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=4.8A,RG=3.4Ω;seetable11

Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=4.8A,RG=3.4Ω;seetable11

Fall time tf - 7 - ns VDD=400V,VGS=13V,ID=4.8A,RG=3.4Ω;seetable11

Table8GatechargecharacteristicsValues


Gate to source charge Qgs - 5.4 - nC VDD=400V,ID=4.8A,VGS=0to10V

Gate to drain charge Qgd - 7 - nC VDD=400V,ID=4.8A,VGS=0to10V

Gate charge total Qg - 19 - nC VDD=400V,ID=4.8A,VGS=0to10V

Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=4.8A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

7


IPD60R380P6


Table9ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=4.8A,Tj=25°C

Reverse recovery time trr - 232 - ns VR=400V,IF=4.8A,diF/dt=100A/µs;see table 10

Reverse recovery charge Qrr - 2.1 - µC VR=400V,IF=4.8A,diF/dt=100A/µs;see table 10

Peak reverse recovery current Irrm - 17 - A VR=400V,IF=4.8A,diF/dt=100A/µs;see table 10

8


IPD60R380P6


5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation(NonFullPAK)

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

10

20

30

40

50

60

70

80

90

Ptot=f(TC)

Diagram2:Powerdissipation(FullPAK)

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

35

Ptot=f(TC)

Diagram3:Max.transientthermalimpedance(NonFullPAK)

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01single pulse

ZthJC=f(tP);parameter:D=tp/T

Diagram4:Max.transientthermalimpedance(FullPAK)

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

9


IPD60R380P6


Diagram5:Safeoperatingarea(NonFullPAK)

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram6:Safeoperatingarea(FullPAK)

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC


Diagram7:Safeoperatingarea(NonFullPAK)

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC


Diagram8:Safeoperatingarea(FullPAK)

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs100 µs

1 ms

10 ms

DC


10


IPD60R380P6


Diagram9:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

20

25

3020 V

10 V

8 V

7 V

6 V

5.5 V

5 V4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram10:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

3

6

9

12

15

1820 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram11:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 5 10 15 200.60

0.70

0.80

0.90

1.00

1.10

1.20

1.30

1.40

1.50

1.60

1.70

1.80

1.90

2.00

20 V

5.5 V 6 V 6.5 V 7 V

10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram12:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.10

0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

98% typ

RDS(on)=f(Tj);ID=3.8A;VGS=10V

11


IPD60R380P6


Diagram13:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

5

10

15

20

25

30

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 15 200

1

2

3

4

5

6

7

8

9

10

480 V120 V

VGS=f(Qgate);ID=4.8Apulsed;parameter:VDD

Diagram15:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram16:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

25

50

75

100

125

150

175

200

225

EAS=f(Tj);ID=1.8A;VDD=50V

12


IPD60R380P6


Diagram17:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175520

540

560

580

600

620

640

660

680

700

VBR(DSS)=f(Tj);ID=1mA

Diagram18:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram19:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Eoss=f(VDS)

13


IPD60R380P6


6TestCircuits

Table10DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table11SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table12UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

14


IPD60R380P6


7PackageOutlines

Figure1OutlinePG-TO263,dimensionsinmm/inches

15


IPD60R380P6



16


IPD60R380P6


A2

H

b

D

c

b2

E

e1

e

L

Q

øP

L1

N

D1

A

DIM

A1

DOCUMENT NO.

Z8B00003319

2.5

REVISION

04

05-05-2014

ISSUE DATE

EUROPEAN PROJECTION

1.130

0.177

MIN

0.095

0.026

0.016

0.617

0.037

0.092

0.394

0.503

0.116

0.124

0.111

0.353

2.862.42

2.54 (BSC)

5.08

28.70

0.95

15.67

0.40

0.65

10.00

2.83

3.15

2.95

12.78

8.97

3

29.75

0.90

0.63

1.51

16.15

3.50

3.38

3.45

13.75

10.65

9.83

MILLIMETERS

MIN

4.50

2.34

MAX

4.90

2.85

0.113

0.100 (BSC)

0.200

3

1.171

0.059

0.636

0.025

0.035

0.419

0.136

0.133

0.138

0.541

0.387

0

INCHES

0.193

MAX

0.112

SCALE

5mm

0

2.5

b1 0.0370.95 1.38 0.054

b4 0.0260.65 1.51 0.059

b3 0.0260.65 1.38 0.054

Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches

17


IPD60R380P6



18


IPD60R380P6


8AppendixA

Table13RelatedLinks

• IFXCoolMOSTMP6Webpage:www.infineon.com

• IFXCoolMOSTMP6applicationnote:www.infineon.com

• IFXCoolMOSTMP6simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/P6



19


IPD60R380P6


RevisionHistoryIPB60R380P6, IPP60R380P6, IPA60R380P6, IPD60R380P6

Revision:2015-07-10,Rev.2.2

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2013-12-05 Release of final version

2.1 2013-12-05 Release of multi-package datasheet

2.2 2015-07-10 PG-TO 263 package added

WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]

PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

MOSFET CoolMOS™ P6 · 600V CoolMOS™ P6 Power Transistor IPB60R380P6, IPP60R380P6, IPA60R380P6,...

Documents

Transcript of MOSFET CoolMOS™ P6 · 600V CoolMOS™ P6 Power Transistor IPB60R380P6, IPP60R380P6, IPA60R380P6,...