MOSFET Common Source Amplifierstorage.googleapis.com/wzukusers/user-19186504/documents...MOSFET...

37
Slide 1 BITS Pilani, Dubai Campus Lecture on Microelectronics Circuits Dr. Vilas Microelectronic Circuits MOSFET Common Source Amplifier

Transcript of MOSFET Common Source Amplifierstorage.googleapis.com/wzukusers/user-19186504/documents...MOSFET...

Slide 1 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Microelectronic Circuits

MOSFET Common Source

Amplifier

Slide 2 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Small signal Model

The definition of Transconductance

The definition of output resistance

The definition of voltage gain

OVn

VvGS

Dm V

L

Wk

v

ig

GSGS

'

D

A

IiD

DSo

I

V

i

vr

DD

Dm

i

ov Rg

v

vA

Slide 3 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Small signal model

(a) neglecting the channel-length modulation effect

(b) including the effect of channel-length modulation, modeled by output resistance ro = |VA| /ID.

Slide 4 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Small signal model

(a) The T model of the MOSFET augmented with the drain-to-source resistance ro.

(b) An alternative representation of the T model.

Slide 5 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Single Stage Cs Amplifier

Input resistance with no load

Input resistance

Open-circuit voltage gain

Voltage gain

LRi

ii

i

vR

LRi

ovo

v

vA

i

ov

v

vA

i

ii

i

vR

Open-circuit overall voltage gain

overall voltage gain

LRsig

vov

vG 0

sig

vv

vG 0

Slide 6 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Single Stage Cs Amplifier

Slide 7 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Single Stage Cs Amplifier

Small Signal equivalent circuit

Slide 8 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Single Stage Cs Amplifier

Input resistance

Voltage gain

Overall voltage gain

Output resistance

Gin RR

)////( LDomv RRrgA

)////( oLDm

sigG

Gv rRRg

RR

RG

Doout RrR //

Slide 9 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Source Amplifier

Very high input resistance

Moderately high voltage gain

Relatively high output resistance

Slide 10 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

CS Amplifier with Source resistance

Slide 11 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

CS Amplifier with Source resistance

Slide 12 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

CS Amplifier with Source resistance

Input resistance

Voltage gain

Overall voltage gain

Output resistance

Gin RR

Sm

LDmv

Rg

RRgA

1

)//(

Sm

LDm

sigG

Gv

Rg

RRg

RR

RG

1

)//(

Dout RR

Slide 13 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

CS Amplifier with Source resistance

Including RS results in a gain reduction by the factor (1+gmRS)

RS takes the effect of negative feedback.

Slide 14 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Gate Amplifier

Slide 15 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Gate Amplifier

Slide 16 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Gate Amplifier

Input resistance

Voltage gain

Overall voltage gain

Output resistance

min gR /1

)( LDmv RRgA //

Dout RR

sigm

LDmv

Rg

RRgG

1

)( //

Slide 17 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Gate Amplifier

Noninverting amplifier

Low input resistance

Has nearly identical voltage gain of CS amplifier, but the

overall voltage gain is smaller by the factor (1+gmRsig)

Relatively high output resistance

Current follower

Superior high-frequency performance

Slide 18 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Drain or voltage follower

Slide 19 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Drain or voltage follower

Slide 20 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Drain or voltage follower

Input resistance

Voltage gain

Overall voltage gain

Output resistance

Gin RR

mL

Lv

gR

RA

1

mL

L

sigG

Gv

gR

R

RR

RG

1

mout

gR

1

Slide 21 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

Common Drain or voltage follower

Very high input resistance

Voltage gain is less than but close to unity

Relatively low output resistance

Voltage buffer amplifier

Power amplifier

Slide 22 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

MOSFET Internal Capacitances

The MOSFET Internal Capacitance and High-Frequency Model

Internal capacitances

The gate capacitive effect

Triode region

Saturation region

Cutoff region

Overlap capacitance

The junction capacitances

Source-body depletion-layer capacitance

Drain-body depletion-layer capacitance

Slide 23 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

MOSFET Internal Capacitances

The MOSFET Internal Capacitance and High-Frequency Model

MOSFET operates at triode region

MOSFET operates at saturation region

MOSFET operates at cutoff region

oxgdgs WLCCC21

0

32

gd

oxgs

C

WLCC

oxgb

gdgs

WLCC

CC 0

Slide 24 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

MOSFET Internal Capacitances

The MOSFET Internal Capacitance and High-Frequency Model

Overlap capacitance results from the fact that the source and drain diffusions extend slightly under the gate oxide. The expression for overlap capacitance

Typical value

This additional component should be added to Cgs and Cgd in all preceding formulas.

oxovov CWLC

LLov 1.005.0

Slide 25 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

MOSFET Internal Capacitances

The MOSFET Internal Capacitance and High-Frequency Model

Source-body depletion-layer capacitance

Drain-body depletion-layer capacitance

o

SB

sbsb

V

V

CC

+1

0

o

DB

dbdb

V

V

CC

+1

0

Csb at zero body-source bias

Magnitude of reverse bias voltage

Built in voltage (0.6V to 0.8V)

Slide 26 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

The MOSFET Internal Capacitance and High-Frequency Model

gmVgsR’L

Cgd

Cgs

G D

S

+

Vo

-

+

Vgs

-

Gsig

'

sigR||RR

sigG

G

sigRR

RV

LDo

'

LR||R||rR

Slide 27 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

The MOSFET Internal Capacitance and High-Frequency Model

Thevenin’s Equivalent Parallel Combination

This circuit can be further simplified

Slide 28 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

gmVgsR’L

Cgd

Cgs

G D

S

+

Vo

-

+

Vgs

-

Gsig

'

sigR||RR

sigG

G

sigRR

RV

X

X’

Igd

Cgd is a bridging capacitor , which connects the output node to the input node.

Slide 29 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

gmVgsR’L

Cgd

Cgs

G D

S

+

Vo

-

+

Vgs

-

Gsig

'

sigR||RR

sigG

G

sigRR

RV

X

X’

Igd

The load current = )( gdgsm IVg

gs

'

Lm

'

LgsmoVRgR)Vg(V

Slide 30 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

gmVgsR’L

Cgd

Cgs

G D

S

+

Vo

-

+

Vgs

-

Gsig

'

sigR||RR

sigG

G

sigRR

RV

X

X’

Igd

gs

'

Lmgd

gs

'

Lmgsgd

ogsgdgd

VRgsC

VRgVsC

VVsCI

1

Slide 31 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

gmVgsR’L

Cgd

Cgs

G D

S

+

Vo

-

+

Vgs

-

Gsig

'

sigR||RR

sigG

G

sigRR

RV

X

X’

Igd

At XX’ the existence of Cgd is known through the current Igd, so Cgd can be replaced by Ceq

Slide 32 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

Look at the input part of the circuit , which is a single time constant circuit of low –pass type.

Slide 33 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

0

1

1

w

sV

RR

RV

sig

sigG

G

gs

Gsigsig

Lmgdgseqgsin

sigin

RRR

RgCCCCCwhereRC

w

||

)(,

'

'

'

11

circuitSTCoffrequencybreakorcorneriswwhere

0

0

Slide 34 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

gs

'

Lm

'

LgsmoVRgR)Vg(V

0

1

1

w

sV

RR

RV

sig

sigG

G

gs

0

1

1

w

s)Rg(

RR

R

V

V '

Lm

sigG

G

sig

o

Combining We get,

Slide 35 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

Which can be expressed in the form

Mid band gain

H

M

sig

o

w

s

A

V

V

1

'

sigin

H

H

'

sigin

H

RC

wfand

RCww

2

1

2

10

Slide 36 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

Thus we can see that, high frequency response will be that of a low pass filter. With 3dB cut off frequency fH

3dB

20 log|AM|

dBV

V

sig

o

f (Hz)

(log scale)

fH

Slide 37 BITS Pilani, Dubai Campus

Lecture on Microelectronics Circuits Dr. Vilas

High Frequency Response

Find the midband gain AM and the upper 3-dB frequency fH

of a CS amplifier fed with a signal source having an internal

resistance Rsig = 100kΩ. The amplifier has RG = 4.7MΩ, RD , RL

=15kΩ, gm = 1mA/V, r0 = 150kΩ, Cgs = 1pF and Cgd = 0.4pF.

For the CS amplifier for above example, find the value of AM

and the upper 3-dB frequency fH if the source resistance

reduced to Rsig = 10kΩ.

Ans: -7. 12V/V, 3.7MHz.