Modeling a UMS GaN transistor with a B1505, a PNA-X … a UMS GaN transistor (CHZ015A) with a B1505,...
Transcript of Modeling a UMS GaN transistor with a B1505, a PNA-X … a UMS GaN transistor (CHZ015A) with a B1505,...
Modeling a UMS GaNtransistor (CHZ015A) with a B1505, a PNA-X and ICCAP
Benoit Mongellaz
Emmanuel Rosello
Cedric Pujol
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17-Sep-14
Why modeling a transistor ?
“A datasheet might not be enough to design”
– Need to have more info to :
• Match the device to the other parts of the circuit (antenna, filters…)
• Linearize a power-amplifier (Linc/Doherty/Envelope tracking)
• Use the device under different operating conditions (Temperature/Bias)
• Predict other figures of merits (EVM, Spectral regrowth…)
Modeling a UMS GaN CHZ015A
transistor
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How to create a model ?
Modeling a UMS GaN CHZ015A
transistor
Efficiently measure the device
Record measurements in a portable model
Design using measurement-based models
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A glimpse at the transistor
Modeling a UMS GaN CHZ015A
transistor
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Demo outline
– Baseband measurements with the B1505 (B. Mongellaz)
– RF measurements with the PNA-X (E. Rosello)
– Create a Spice model of the CHZ015A using ICCAP (C. Pujol)
– Reusing the Spice model in the ADS design framework (C. Pujol)
Modeling a UMS GaN CHZ015A
transistor
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B1505A Power Device Analyzer
Benoit Mongellaz
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transistor
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B1505A’s Measurement Resources
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transistor
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High Voltage SMU
(B1513B HVSMU)
Up to 3000 V
High Current SMU
(B1512A HCSMU)
Up to 20 A pulse
Medium Current SMU
(B1514A MCSMU)
Up to 1 A / 30 V pulse
Multi Freq CMU
(B1520A MFCMU)
3000V biased CV
Medium Power SMU
(B1511A MPSMU)
Up to 100 V, 100 mA
10 fA resolution
High Power SMU
(B1510A HPSMU)
Up to 200 V, 1 A
10 fA resolution
Ultra High Voltage Unit
(N1268A UHV Expander
and two B1514A MCSMU
or a combination of a
B1512A HCSMU and a
B1514A MCSMU)
Up to 10 kV
High Voltage Medium
Current Unit
(N1266A HVSMU Current
Expander , B1513B
HVSMU and two units of
B1514A MCSMU/B1512A
HCSMU)
±1500 V / 2.5 A ,
±2200 V/ 1.1 A
Ultra High Current
Unit
(N1265A UHC
Expander/Fixture and
two units of
MCSMU/B1512A
HCSMU)
Up to 1500 A / 500 A
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Improved efficiency
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- Standard test fixture for safe packaged device testingThe B1505A supports two standardized test fixture.
Both test fixtures support a variety of different package types.
N1259A Test Fixture for Power Device N1265A Ultra High Current Expander / Fixture
3000 V / 40 A 10 kV / 1500 A
Compatible adapter
for curve tracer TO220/TO3P socket
Universal type moduleTeflon board module
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Improved efficiency
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-Supported and secure on-wafer testing over 400 A
Support more than 400 A and up to 10 kV on-wafer measurement
Provide accessories for sure and safe on-wafer evaluation
Control prober through EasyEXPERT
Test Automation with Module Selector/Quick Test Mode
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PNA-X The new VNA architecture
Emmanuel Rosello
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Traditional Vector Network Analyzer
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Capabilities:
• Measures Scattering
Parameters
• Reflection S11 = A/R1
• Reflection S22 = B/R2
• Forward Transmission S21 =
B/R1
• Rev Transmission S12 =
A/R2
• Vector-error correction used
to overcome hardware
limitations
Source
1
DUT
• Limitations:
• Single synthesized, sweeping source:
• Low power
• High harmonic & spurious content
• Single non-synthesized LO:
• Phase-locked to RF source
• No independently tunable receivers
• Harmonic samplers:
• High noise floor
• Fixed, narrow IF bandwidths
• No pulsed-RF capability
• Limited absolute calibration:
(power, phase)
• Only two ports typically
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4-Port PNA-X Innovative architecture up to 67GHz.
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Single Connection Multiple Measurements concept !
Test port 3
C
R3
Test port 1
R1
Test port 4
R4
Test port 2
R2
A D B
To receivers
LO
Pulse generators
rear panel
1
2
3
4
Source 1
OUT 1 OUT 2
Pulse
modulator
Source 2
(standard)
OUT 1 OUT 2
Pulse
modulator
J9J10J11 J8 J7 J2 J1J4 J3
• Combiner.
• Switches.
• Dual high power and
pure RF sources.
• Pulse Modulators
• Dual coupler
architecture.
• Internal source
attenuators
• Solid state switch on
reference receiver.
• High accuracy
power control out.
• Very high receivers
linearity.
• Rear panel jumpers.
• 4 internals pulse
generators.
• Internal attenuator on
each measurement
receivers.
• Front panel jumpers
for complex and high
power setup.
• All hardware and
setups with Wizards!
• Unique and flexible
hardware.
• High accuracy power
control.
• Much More…
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One Instrument For Component Test6 channel simultaneous measurements with full calibration. No need to connect or disconnect between
measurements. S-parameters + pulsed RF + IMD + Gain Compression + Noise Figure.
Previously ATE systems took >186s with less accuracy. More Accurate and ~ 37x Faster.
Ch1: Standard s-parameters – 201 pts, 2-port Cal, 1 kHz IFBW.
Ch6: Pulsed S21, 401 pts, 2-port Cal, using internal pulse gen and mod, 5 MHz IFBW.
Ch3: Fastest & most
accurate Amplifier Gain
Compression. 101 pts,
Cal: src/rcvr/mismatch
correction. 10 kHz IFBW.
Ch2: Two Tone IMD using
internal broadband
combiner and two PNA-X
sources. 101 pts, src/rcvr
Cal, 100 Hz IFBW.
Ch4: Integrated Noise
Figure. Fastest and most
accurate amplifier noise
figure measurement.
101 pts, Source-corrected
NF Cal, 1 kHz IFBW.
Modeling a UMS GaN CHZ015A
transistor
• Classic VNA.
• 2 internals RF sources (low spurs and PN).
• Spectrum Analyzer.
• Noise Figure Analyzer.
• 4 Pulse Generators.
• Multiple accurate Power meter.
• Switches.
• Front and rear panel jumpers.
• Frequency Offset capabilities.
• External instruments control.
• Setup and calibration Wizards.
• Measurements Classes.
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High Power setup
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Creating a model with ICCAP
Cedric Pujol
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What is a Spice model ?
Modeling a UMS GaN CHZ015A
transistor
Abstract electronics physics into a set of parameters
Angelov-GaN example
(I. Angelov, Chalmers University)
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Driving measurements from a modeling point of view
Measure and collect
Fit the model parameters
Use the model for
design
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transistor
– ICCAP embeds “toolkits” that suggest the relevant measures to achieve
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Fitting the model parameters to measurements
Measure and collect
Fit the model parameters
Use the model for
design
ICCAP toolkits
embed
customizable
strategies to fit
the parameters
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Use the model inside ADS
Measure and collect
Fit the model parameters
Use the model for
design
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Examples of model usage
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Spectral regrowth EVM
Gain
Constellation and spectrum
PAE
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Conclusion
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transistor
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Efficiently measure the device
Record measurements in a portable model
Design using measurement-based models