MOCVD Horizon for Cost & Efficiency · MOCVD Horizon for Cost & Efficiency Subject: Presentation...
Transcript of MOCVD Horizon for Cost & Efficiency · MOCVD Horizon for Cost & Efficiency Subject: Presentation...
MOCVD Horizon for Cost & Efficiency
Jay Montgomery
DOE SSL Manufacturing R&D Workshop Boston, MA June 5-6, 2013
Copyright ©2013 Veeco Instruments Inc. 2
Current MOCVD Challenges
• Process ‒ Capacity is not enough ‒ Improved equipment performance is required
• Integration
‒ Testing at the device level is most relevant and critical
• Inflection Points ‒ Significant interest in GaN-on-Silicon ‒ Standardization of PSS ‒ Emerging competition
Copyright ©2013 Veeco Instruments Inc. 3
Technology and Cost Curve: Still A Way to Go • CoO will continue to drive the demand curve for earlier adoption
• The market appears to be focused on 4” production and can benefit greatly from high-capacity, automated equipment with significant floor-space efficiency
• GaN-Si LED manufacturing: ‒ Emerging quickly to leverage significant silicon knowledge and capital
‒ Can benefit from a high-yield reactor requiring alternate hardware
less than
of World’s Lighting is LED
5%
Copyright ©2013 Veeco Instruments Inc. 4
DOE Funding Complements Industry Investments to Keep Pace with SSL Roadmap Even In Downturns
• 3.0x increase in CapEx Efficiency • >2.5x lower Cost of Ownership
1.0
0.77
0.64
0.44 0.39
2010
0.33
Next Gen C1 Next Gen C2 Roadmap
2013 R&D >$50M
Copyright ©2013 Veeco Instruments Inc. 5
4” and 6” Wafer Production Will Dominate Market Pe
rcen
tage
of P
rodu
ctio
n Sy
stem
by
Waf
er S
ize
(%)
85%76% 72%
65%56%
48%34%
27% 21%
15%21%
22%27%
32%36%
42%
41%40%
2%6% 9% 11% 14%
19%25%
29%
1% 2%5% 7% 10%
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2009 2010 2011 2012 2013 2014 2015 2016 2017
8" Wafer6" Wafer4" Wafer2" Wafer
Notes: Yole and Veeco estimates.
Wafer size production
CAGR 2014-17
2” -13%
4” 19%
6” 48%
8” 90%
• 4” and 6” will dominate LED production from 2014 • PSS adoption has slowed transition to larger wafers
Copyright ©2013 Veeco Instruments Inc. 6
Leveraging MOCVD Performance
• Improvements & advances in epitaxial growth cascade through the manufacturing & R&D supply chains
Brightness
Structure Vertical vs. Horizontal
Materials
Substrates
Color
Wafer-Level Binning
Blend Binning
Electrical
Driver Integration
Process Control
Wafer-Level Binning
CoO
Capital
Epi-Specific Metrology
Silicon-Based 200mm Reuse
Copyright ©2013 Veeco Instruments Inc. 7
MOCVD Enables Aggressive Chip Cost Reduction Description 4” Sapphire
Production Next-Gen GaN:Si
Relative Brightness (lm/mm2) 100% 92%
Chip Yield (lm/mm2, Vf) 75% 85%
Wafer Mean Wavelength Yield (5 nm bin) 85% 95%
WiW Wavelength Yield (5 nm bin) 85% 90%
Relative Chip Cost ($/lm) 100% 76%
Continued DOE funding can accelerate disruptive Next-Gen MOCVD GaN-on-Si technologies for
>20% cost reduction of medium power SSL chips to stay ahead of current and emerging Chinese
competition
Copyright ©2013 Veeco Instruments Inc. 8
A Model of DOE-Funded Success
Fund Key Manufacturing
Enablers Leverage EPI CoO
GaN:Si Capital Reuse
Encourage Collaboration Close cooperation
within SSL food chain Materials – OEM Analytical – Fab
Rapid Prototype Pilot
Production Reduce barriers to
testing new process equipment
Focused strategy to accelerate low-cost commercialization
Copyright ©2013 Veeco Instruments Inc. 9
2007 2008 2009 2010 2011 2012
Mar
ket S
hare
MOCVD Success Supported by DOE • Created high-tech U.S. manufacturing jobs • Increased U.S. competitiveness • Accelerated the LED roadmap
K465 24%
29%
44%
62%
51%
MaxBright MHP (2012) • ↑ 20% WiW Uniformity • ↓ Cost of Ownership
MaxBright (2011) • ↑ 5x Productivity • ↑ Footprint Efficiency
K465i (2010) • Improved Flow Uniformity • Improved Serviceability
…. Long-term
Next Generation Platform • ↑ Yield • ↓ CoO • In-situ Control • Automation