Millimetre-wave solutions for 5G backhaul - Interlligent UK · • Importance of detailed device...

Millimetre-wave solutions for 5G backhaul

Mike Geen

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© Filtronic 2017

Summary

• The Mobile Backhaul Background• Fixed wireless bands and available BW

• Use cases

• The impact of 5G

• Spectrum availability

• Increasing capacity• mm-Wave transmission characteristics

• Modulation order vs channel width vs multichannel

• mm-Wave technology overview• Semiconductors

• mm-Wave module construction

• mm-Wave transceiver design• Key features

• Importance of detailed device characterisation

• Key components

• Conclusions and further information

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© Filtronic 2017

3www.filtronic.com

Basic microwave backhaul

“……. the backhaul portion of the network comprises the intermediate links between the core network, or backbone networkand the small subnetworks at the "edge" of the entire hierarchical network”.

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https://en.wikipedia.org/wiki/Core_network

https://en.wikipedia.org/wiki/Backbone_network

© Filtronic 2017

Backhaul Media

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Typically costs between £30,000 and £80,000 per km to lay new fibre.Often impossible to lay new fibre where it is needed.

Optical Fibre installation tool Microwave installation tool

© Filtronic 2017

Backhaul spectrum

www.filtronic.com

• In the traditional bands there are a number of narrow channels spread between 6 and 42GHz. The total bandwidth available for mobile backhaul below 42GHz is just 15GHz. This now heavily used and expensive licences are required to operate in these bands.

• In contrast, the millimetre wave bands will provide an additional 21GHz of bandwidth in large chunks allowing very high data rates to be achieved.

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© Filtronic 2017© ETSI 2016. All rights reserved

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© ETSI 2016. All rights reserved

Area Traffic

Capacity

10 Mbps/m2

Ultra Dense

Tera Cell

Connections

1,000KConnections

/ Km2

Mobility

500km/hHigh-speed

railway

Throughput

10Gbps/ connection

Latency

1 msE2E

Latency

5G

100Mbps 10K 350Km/h30~50ms Small Cells

LTE

GA

P 30~50x 100x 100x 1.5x Densification

Diversified challenges and gaps for 5G

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© Filtronic 2017

Pressure on spectrum from 5G mobile access

• The mobile industry is now paving the way towards the standardization of the fifth generation of mobile telecommunications technology. 5G services intend to offer higher efficiency and significantly faster mobile data services.

• To achieve the target of 10Gbits peak download capacity requires several GHz of contiguous spectrum – (>1GHz per operator)

• Spectrum above 6 GHz now under consideration for 5G to provide wider bandwidth channels to support higher volume data communication to wireless devices.

• Ofcom commissioned a study which identified top 5 bands as candidates for 5G – all mm Wave

• Ofcom subsequently also identified lower frequency bands although these may not offer sufficient bandwidth

• Similar work ongoing with ITU and FCC

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Source; Ofcom 5G and Future Technologies presentations: http://stakeholders.ofcom.org.uk/spectrum/spectrum-events/5g-future-technology/ Quotient Associates - 5G Candidate Band Study: http://stakeholders.ofcom.org.uk/binaries/consultations/above-6ghz/qa-report.pdf

© Filtronic 2017

5G mobile access will create challenges for mobile backhaul

• Potential threat to existing fixed service bands - the allocation of bands above 6GHz for 5G (deployments after 2020), can endanger the capability of operators to properly operate backhaul networks for 3 and 4G

“All discussions about allocation of spectrum for 5G must consider the needs of the operators for backhaul, current (3 and 4G) and future (5G)”*

“The allocation of spectrum for 5G cannot be separated by the allocation of sufficient and suitable spectrum to deploy the backhaul network” *

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* Renato Lombardi – ETSI mWT ISG Chairman.

© Filtronic 2017

Summary


• Use cases









• Key components


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© Filtronic 2017

Mobile backhaul today

11© ETSI 2016. All rights reserved

11

© Filtronic 2017 14

• Ten different portions of spectrum are available (when some contiguous portions are considered), from 92 to 200GHz, allocated primarily to Fixed Service, covering almost 54% of the whole band under consideration (92-200GHz).

• More than 30GHz of spectrum available in total in bands ranging from 1 GHz to 12.5 GHz:

© ETSI 2016. All rights reserved 14


• The rain attenuation in W-band and D-band can be derived from the figure below. It should be noted that the rain attenuation of D-band is around 2dB larger than E-band. In addition it should be noted that the rain attenuation in D-band is almost flat.

• Compared to V-band, both W and D-band, similarly to E-band, are in the part of spectrum not affected by Oxygen absorption peaks

• Gas attenuation, is 1 to 2dB/km in D-band. This is not a dominant factor for the link distance limitation.

• The gas attenuation in D-band is almost flat. In W-band it’s lower than 1 dB/km

• System simulations undertaken within the ETSI mWT ISG suggest link distances of several hundred metres are practical at D band frequencies with comparable antenna sizes to E Band

© ETSI 2016. All rights reserved


Rain Attenuation

• ~80% of the Continental US and most of Western Europe falls into rain zone K and below.

• To operate at a 99.99% availability level, a radio system’s fade margin must be designed to withstand a maximum rainfall rate of 42 mm/hour

• Equates to ~16dB/km loss at 86GHz compared to ~11dB/km at 40GHz

• E band Antennas give 6dB more system gain than at 40GHz for a given aperture

© Filtronic 2017

Increasing capacity - Modulation vs BW

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• Doubling channel width has 3dB impact on C/N at Rx and therefore range• Doubling data rate through modulation order has more severe impact on min C/N required to achieve error free

operation:• 7dB impact QPSK to 16 QAM, • 12dB impact 16QAM to 256QAM and • 12 dB impact 256QAM to 4096 QAM

© Filtronic 2017

Modulation Order and E-band Link Range

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Tx

12 to 32dBm 43dBi

Gain = 𝜋2 𝑑2

λ2ε

Ga=

43dBi

Rx

NF=

7dB

Free space loss=

20log(4πd/λ)

131dB for d=1km,

145dB for d=5km

50dBi 60cm Antenna will increase range by approx. 40% to 60% depending on power, modulation & rain fade

PA back off required at higher orders to ensure linearity and mask compliance

QPSK

16QAM

256QAM

© Filtronic 2017

Increasing the data rate

• Higher order modulation• Conserves Spectrum

• Diminishing returns for data rate* and severe impact on system gain

• Places severe demands on phase noise, PA linearity, Gain flatness, IQ amplitude and phase matching (some of these can be mitigated to some extent within the modem)

• 256 QAM readily achievable and just 512QAM possible with using available components.

• Wider channels• Consumes spectrum

• Increases demands on base band A/Ds D/As and diff amps

• Tx and Rx gain flatness requirements more sever

• Less impact on link budget

• Multi channel systems – XPIC, LOS-MIMO, Multiband• Recent published results: 40 Gbps over 4.2km , 36Gbps over 10km

• Consumes spectrum

• Higher cost –• Multiple transceivers,

• Additional passive components; multiplexers OMTs polarisers etc

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*symbol rate =log2 of QAM orderELVA-1 http://www.prweb.com/releases/2017/04/prweb14269512.htm

© Filtronic 2017

Summary


• Use cases









• Key components


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© Filtronic 2017

Semiconductor technology status

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• GaAs

• Highly integrated single chip receivers and medium power transmitters available from several vendors

• Power amplifiers to 28dBm Psat demonstrated with commercial 0.1um pHEMT Foundry (WIN)

• GaAs mHemt processes have demonstrated 2dB NF in E band (BAe 50nm mHEMT)

• InP <2.5dB NF demonstrated with 0.1um InP HEMT (Northrop Grumman)

• GaN PAs with Psat > 30dBm to 100GHz demonstrated (HRL 0.14um GaN on SiC)

• InGaP/GaAs HBT – Low phase noise VCOs -95dBc/Hz at 1MHz after multiplication to 86GHz

• SiGe First generation (130nm, ~250GHz fT) highly integrated chips available. Power 12dBm to 18dBm (Psat), Noise figure 8 dB to 11dB. (up-to 16dB over temperature). Phase noise ~ -83 dBc/Hz. Well suited to 60GHz small cell and WiGig

• BiCMOS – PAs reported up to 20dBm on 40nmCMOS. NF similar to SiGe. mmWave CMOS Still at development phase – very high initial investment so will require very high volume application.


2W E Band Power Amplifier

Filtronic Cerus Power Amplifier

• OIP3 39dBm• 18dB gain• Integrated power detector• 40x40x47mm• 4V, 3.6A

• E Band Waveguide is small• Efficient power combining

therefore possible in a compact outline

© Filtronic 2017

RF Analog Semiconductor Technologies Trends

• Compound semiconductors are essential for high performance systems

• Highly integrated GaAs chip sets available now – relatively low initial investment makes these well suited to backhaul volumes

• Si based technologies offer a good solution for short reach systems but demand high volumes to justify initial investment

• SiGe /GaAs combinations achieving usable levels of Macro cell performance.

• Phase noise currently a major limitation for fully integrated SiGe– Use of external low noise VCO required For reliable operation with high order modulation,

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RF –Semitechnology

Use

Cases

Mac

ro

Ce

ll

Bac

khau

l

Mac

ro

Ce

ll

Fro

nth

aul

Smal

l

Ce

ll

Bac

khau

l

Smal

l

Ce

ll

Fro

nth

aul

Fixe

d B

B

Wir

ele

ss t

o

Ho

me

..

Ne

xt

gen

. (5

G)

SiGe + GaAs

2016 Over time2020

BiCMOS

CMOS

GaAs

SiGeGaAs

GaAs BiCMOS *

GaN (PA)

BiCMOS

CMOSSiGe

GaAs

SiGeGaAs

BiCMOS

CMOS

BiCMOSCMOS

GaN

BiCMOS *

GaN (PA) InP/mHEMT (LNA)

InP/mHEMT (LNA)

InP

* Up/Down conversion – III-V PA/LNA

To>3000m

16 to 256 QAM

250 to 2000MHz CS

1 to 10Gbps (with XPIC/MIMO)

› To>300m

› QAM64+

› typ.500MHz CS

› >1Gbps

› (Steerable low gain antennas)

› 50-200m

› QPSK,16QAM

› >1GHz CS

› >1Gbps

50-200m

mod TBA

>1GHz CS

To 10Gbps

© Filtronic 2017

D Band Semiconductor Status

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130 to 134 141 to 148.5 GHz 151.5 to 164 GHz 167 to 174.5 GHz

90nm SiGe Bi’ 140GHz 6dB NF 22 dBm Psat

65nm CMOS 140GHz PA4dBm Psat

100nm InGaAs mHEMT 155 GHz PA 11dBm P1dB

100nm InP p HEMT 170GHz PA 13dBm Psat

35nm InP p HEMT 185GHz LNA 4dB NF

50nm InGaAs m HEMT 210GHz LNA 4.8dB NF

130nm SiGe BiCMOS 148GHz PA 4.5dBm Psat

• All proposed channel agreements can be supported with III-V technology• Si based technology currently only applicable to 160GHz (SiGe) and 140GHz (CMOS)• Note, there are no COTS devices currently available

55nm SiGe BiCMOS 160GHz PA 10dBm Psat

.

© Filtronic 2017

mmWave assembly technology

• Packaged mmWave die to allow SMT assembly are appearing in form of SIP/ MCMs, chip scale BGAs and flip chip die, however, any form of packaging will impact the performance – up to 2dB loss in typical plastic BGA. Also concerns over thermal impedance and reliability of flip chip PAs

• FBL has in house automatic die attach and wire bond capability to allow direct integration into microwave assemblies to achieve the highest level of performance without the need for the addition complexity and cost of a packaging.

• Hybrid construction gives ability to mix and match technologies e.g. Quartz filters and printed micro strip components – plus SMT components.

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0 20 40 60 80 100

Frequency (GHz)

s_parameters

-5

-4

-3

-2

-1

0

86 GHz-2.936 dB

86 GHz-1.55 dB

DB(|S(2,1)|)

Ribbon

DB(|S(2,1)|)

Wire

Assembly Challenges 1

Manual wire / ribbon bonding

MMIC to MMIC connections


Bond compensation

Nominal case:- 300um long

reduction in thru loss

Improvementin return loss

Assembly Challenges 2

Possible to apply compensation but still subject to assembly tolerance and variations in bond length

© Filtronic 2017

Die & Component Placement

• Fully automated component placement equipment enables tightly controlled, accurate and repeatable die placement

• Vacuum picked from waffle pack or reels

• X/Y placement accuracy +/- 12 microns

• Automated recognition system for alignment of fiducials and components

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© Filtronic 2017

Summary


• Use cases









• Key components


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© Filtronic 2017

10Gbps E Band Outdoor unit

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Filtronic Orpheus Transceiver

Filtronic Orpheus based ODU reference design

© Filtronic 2017

E Band Transceiver Key Features

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Parameter Main System impact Typical specRef to Antenna port

Sate of the Art

Tx Linearity Mask complianceModulation order

IMD3 -20dBc @ 20dBm OIP3 27dBm

OIP3 >36dBm

Phase Noise Modulation order -92dBc/Hz@100kHz-112dBc/Hz@1MHz

-98dBc/Hz @100kHz

Rx Noise Figure

Rx Sensitivity - Range <9dB <4dB

Tx Power Max Range Psat >23dBm Psat 35dBm

Rx Linearity Min Range, CWinterferer immunity

-32dBc@-23dBm IPPower

-

Tx Noise floor Mask Compliance <(Pout-77) dBm/MHzwithin 2.5xCS

-

Tx/Rx BB Bandwidth

Data Rate 3000 MHz ADC and BB diff Amplimitation

Tx Power control

System Dynamic Range

30dB (settable within ±1dB at top of range)

-

On board micro manages channel setting and application of calibration data for Txpower monitor, LO cancelation, sideband suppression, temperature compensation, etc.


ETSI E-Band Mask

Shown for 2GHz channel spacing

Note; Mask is relative, noise floor must therefore decrease dB for dB with Tx PowerRef ETSI EN 302 217-2 V3.0.8 (2016-06)

The noise floor attenuation depends on the CS

© Filtronic 2017

Example Tx Line-up

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• All element models based on measured data

• Data files contain the mmW performance at numerous bias points

• Line-up actively adjusts individual elements to provide modelled performance at defined Tx output power (reflecting real-world operation)

mmW WGLaunch

Diplexer etc

BasebandInput

E-Band LOInput

© Filtronic 2017

Sensitivity to the linearity of Tx chain elements

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Tx Chain sensitivity to PA linearity

Tx Chain sensitivity to modulator linearity Tx Chain sensitivity to MPA linearity

Parameter Min PA Requirement

Comment

Gain 23dBPsat 26dBm Transceiver Linier Pout

20dBmOIP3 at 20dBm

32dBm Min required to ensure transceiver OIP3 of 27dBm.

OIP3 at 17dBm

32dBm

OIP3 at 5dBm

27dBm

PA dominates Tx Chain linearity

Pout 20dBm

Pout 20dBm Pout 20dBm


IM3 measured on PAs from four manufacturers

32dBm

PA 1

PA 3

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

5 10 15 20 25 30

IMD

3 (

dB

c)

Output power (dBm)

DUT2 Fixed Vg -414mV

71.0

73.5

76.0

OIP3

OIP3 32dBm

36dBm

PA 2

PA 4


IMD3 vs Power vs Bias conditions


60 70 80 90

Frequency (GHz)

gAPZ0052_DUT1_NoRibbon

-30

-20

-10

0

10

20

30

86 GHz81 GHz

DB(|S(2,1)|)gAPZ0052_DUT1_Vd 3p3V_Vg1 n351mV_Id1 350mA_Vg2 n350mV_Id2 400mA_05Dec16



"TYPICAL" s21 spec

min s11 and s22 spec

s21

s22

s11

s-parameters probed on chip vs ribbon bonded

60 70 80 90

Frequency (GHz)

gAPZ0052_DUT1_PlusRibbon

-30

-20

-10

0

10

20

30

86 GHz81 GHz

81.4 GHz21.85 dB

86 GHz-4.478 dB

86 GHz14.34 dB

DB(|S(2,1)|)gAPZ0052_DUT1_Probe Points_Vd 3p3V_Vg1 n354mV_Id1 350mA_Vg2 n353mV_Id2 400mA_07D



60 70 80 90

Frequency (GHz)

gAPZ0051_DUT1_noRibbon

-30

-20

-10

0

10

20

30

76 GHz71 GHz




"TYPICAL" s21 spec

"MIN" s11 spec

"MIN" s22 spec

s21

s11

s22

60 70 80 90

Frequency (GHz)

gAPZ0051_DUT1_plusRibbon

-30

-20

-10

0

10

20

30

76 GHz71 GHz

74.7 GHz-4.729 dB

76 GHz16.21 dB

DB(|S(2,1)|)

gAPZ0051_DUT1_Probe Points_Vd 3p3V_Vg1 n345mV_Id1 275mA_Vg2 n326mV_Id2 400mA_07D

DB(|S(1,1)|)


DB(|S(2,2)|)


s11

s21

s22

© Filtronic 2017

20

21

22

23

24

25

26

27

28

29

30

1 2

P1

dB

(d

Bm

)

DUT#

71

73.5

76

20

21

22

23

24

25

26

27

28

29

30

1 2

Psa

t (d

Bm

)

DUT#

71

73.5

76

Fixed Id Fixed Vg

Effect of ribbon bonds on Power 71 to 76GHz

38

DUT1 (with ribbon bonds) DUT1 (with ribbon bonds)

fixed Vg

fixed Vgfixed Id fixed Id fixed Vg

Fixed Id Fixed Vg

20

21

22

23

24

25

26

27

28

29

30

1 2

Psa

t (d

Bm

)

DUT#

71

73.5

76

fixed Vg

20

21

22

23

24

25

26

27

28

29

30

1 2

P1

dB

(d

Bm

)

DUT#

71

73.5

76

Fixed Id Fixed IdFixed Vg

DUT2 (probed on chip)DUT2 (probed on chip)

© Filtronic 2017

LO Sources

• LO signals generated within the Tx and Rx modules using internal PLL and low phase noise GaAs VCOs

• To reduce power consumption, VCO outputs can be shared via power splitters between same frequency RF modules

• RF filtering suppresses unwanted products generated by the VCOs and multiplication stages

• High stability TXCOs employed

• Typical Phase noise vs carrier offset after multiplication (at E-Band) is defined in the table below

• Field proven to robustly support 256QAM operation

39

Carrier offset

Phase Noise (dBc/Hz)

1KHz 50

10kHz 55

100kHz 95

1MHz 115

10MHz 135

100MHz 140

© Filtronic 2017

Filters / Multiplexers

• Filtronic has long experience designing and manufacturing E-band filters, diplexers and multiplexers

• In-house developed software “Network Synthesis” for initial filter synthesis

• AWR Microwave Office to create ideal filter model

• Keysight EMPro to create advanced 3D EM filter model

• Manufacturing tolerances need to be considered at the design stage

• The plots below show the yield analysis based on +/-10um (left) and +/-5um (right) machining and plating tolerances

• At D Band manufacturing tolerances of +/-2um are required

• Multiplexers allow simultaneous multi-channel operation for efficient use of the E-band spectrum, since WG dimensions are small at E Band it is possible to incorporate these into a very compact assembly

• For example, a 2x4 channel multiplexer system incorporating a polariser can facilitate 4 simultaneous transmit/receive links each operating with a 2GHz BW

• Plot showing E-band multiplexer simulation (green) versus measured performance (black/red)

• In addition, Filtronic can integrate receivers directly onto the multiplexer to reduce weight and insertion loss leading to lowest possible noise figure solutions

• Filtronic employs the following tool chain to robustly simulate filter/multiplexer performance:

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69 74 79 84 88

Frequency (GHz)

epl_rect_post_pw1_pl1p6_php57

-80

-60

-40

-20

0

DB(|S(1,1)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0



DB(|S(1,1)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance



69 74 79 84 88

Frequency (GHz)

epl_rect_post_pw1_pl1p6_php57

-80

-60

-40

-20

0







© Filtronic 2017

Transmitters Receivers and PAs

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• Filtronic transmitters and receivers offer excellent gain, gain control and linearity

• Integrated VCOs deliver market leading phase noise and reduce size & weight

• On-board microcontroller and pre-calibration takes care of the Tx output power regardless of the requested frequency, power or ambient temperature

• Receiver modules developed employing ultra-low noise figure MMICs

• Cerus 2W E-Band PA (can be scaled to >3W) proven to deliver high gain and excellent linearity. Demonstrated 32dBm linear power at Mobile World Congress, Barcelona March 2017

© Filtronic 2017

Multichannel Long Range Transceivers

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Parameter Spec

OM

T/Po

lari

ser Frequency Range 71-86GHz

Insertion Loss <0.8dB

XPD >30dB

Dimensions 20x20x20mm

Weight <25g

Mu

ltip

lexe

r Passband partitioning To suit customer requirements within range 71-76GHz/81-86GHz

Insertion Loss*4 <0.8dB

Return Loss *4 >14dB

Channel Isolation(Tx-Tx or Rx-Rx)*4

>25dB

Channel Isolation (Tx to Rx)

>90dB

Dimensions (example for 4 channels)

100x100x6mm

Weight (example for 4 channels)

<200g

• The specification below presents one possible system architecture.

Parameter Spec

Rec

eive

rs Number of Receivers Multiple

Rx Centre Frequency in Range

71-76GHz/81-86GHz *1

Noise Figure <4dB

RF Bandwidth per Rx 2GHz

Gain 25dB

Gain Adjustment Range 10dB


100x100x20mm

Weight (example for 4 channel)

<400g

Total Power Consumption ~4W

Parameter Spec

Tran

smit

ters Number of Transmitters Multiple

Tx Centre Frequency in Range

71-76GHz/81-86GHz *1

PSAT >33dBm

P1dB >31dBm

Gain ~35dB

Gain Adjustment Range >10dB


100x100x20mm

Weight (example for 4 channels)

<900g*2

Total Power Consumption per channel

~18W*2

*1 Support for multiple channels and cross polarisation.*2 Weight and power consumption dependent on PA output power requirements. *3 Dependent upon antenna gain, dc power availability etc., higher power solution can be designed for ground based system.*4 Example shown for 2GHz channels separated by 3GHz.

© Filtronic 2017

Conclusion

• Wide bandwidth mm Wave radios provide the solution to the increasing backhaul capacity demands of next generation communications system

• Fiber like capacity; 10Gbps in a single channel, 40Gbps in multichannel configurations and with sufficient Tx power, E-band links can operate at high capacity over 10km.

• New spectrum allocations above 95GHz will provide a path to even higher capacities in the future

• Filtronic’s proven E-band technology platform has been developed to enable a rapid, low risk transition from high performance short range terrestrial links to the highest capacity long range links

THANK YOU

43

© Filtronic 2017

An analogy?

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• The population of London grew dramatically in the 19th century but until 1865 the sewage system comprised of 200,000 cesspools connected to creeks and streams flowing into the river Thames, a shared resource providing transport and access to city.

• Joseph Bazalgette realised the flow rate of the river was insufficient to cope and a dedicated high capacity network was needed. He subsequently designed and oversaw the construction of 82 miles of underground brick main sewers to intercept outflows from 1,100 miles of new street sewers.

• When planning the network he took the densest population, gave every person the most generous allowance and came up with a diameter of pipe needed, then doubled it: had he not done so the system would have overflowed in the 1960s, rather than coping, as it has until the present day.

• The demand for telecom capacity is less easy to predict.• 5G seems to be aiming to deliver the equivalent of a main line sewer to every

person!

© Filtronic 2017

Further Information

The following slides provide information on:

• The ETSI millimetre wave Transmission Industry Specification Group

• Filtronic Broadband • Company background

• Design and manufacturing capabilities

45

© Filtronic 2017

About Filtronic

49

• Filtronic was established 1977 currently ~200 employees

• World leader in the design and manufacture of a broad range of customised RF, microwave

and millimetre-wave components and subsystems.

• Two Business Units:

• Filtronic Wireless designs and manufactures RF filters, combiners, TMAs, microwave subsystems and antennas for the mobile telecommunications industry, focusing on equipment for OEMs and network operators. HQ in Leeds with design centres in US and Sweden. Manufacturing is carried out in Suzhou, China

• Filtronic Broadband designs and manufactures 60 to 90GHz millimetre-wave products for mobile broadband backhaul, defence applications as well as providing build to print manufacturing at its state of the art, highly automated facility in Sedgefield Co Durham

• Filtronic has demonstrated world class product quality and reliability, with over 300,000

transceiver modules and 700,000 filter products successfully deployed in the field.

• FBL is a device agnostic supplier of mm-Wave transceivers to OEMs offering high specification,

competitively priced modules that reduce customers time to market

• We brings value to the semiconductor suppliers and OEM customers by acting as a technology

enabler

• Our target customers are focused on supplying system level products to operators and have

retreated from transceiver design and manufacture

© Filtronic 2017

Filtronic Background

• Filtronic Broadband Limited is a well established world leading designer and manufacturer of microwave & millimetre-wave products for the mobile backhaul and adjacent markets. Supplying customised turnkey solutions and providing Contract Manufacturing Services to the European Aerospace and Defence industry.

• Filtronic product range includes transceiver modules, multi-chip transceiver packages in Surface Mount Technology (SMT), diplexers and filter products covering a wide frequency range from 4GHz to 110GHz including V-band (57GHz to 66GHz), E-band (71GHz to 76GHz & 81GHz to 86GHz) and W-band (91GHz to 95GHz).

Highlights

• 7 year track record in development of market leading, mmWave modules: Filtronic has an ongoing investment programme in mmWave technology which is delivering market leading TR modules to major OEMs.

• Established volume supplier of microwave & mmWave transmit and receive modules: Filtronic has extensive in-house design and manufacturing capability for microwave modules covering frequencies from 4-86GHz.

• Vertical cost effective solutions: Benefit of investment of over $5M in R&D including our own highly competitive MMIC chipsets.

• Highly integrated architectures: Filtronic designs and manufactures highly integrated microwave sub-systems for mobile backhaul and for military radar applications. A typical module includes full transmit and receive microwave front end electronics together with signal sources, LO synthesisers and baseband conversion. We can also include integrated no tune, low-loss diplexers/filters.

• Long established automated test facility. FBL has made substantial investments in automated microwave test over the frequency range 5GHz to 90 GHz.

• Filtronic is an existing approved vendor to major OEMs and aerospace equipment manufacturers.

• High reliability demonstrated through high volume field deployments.

• Over 300,000 Microwave modules, over 25,000 millimetre-wave modules and over 500,000 SMT multichip modules currently in service in mobile backhaul networks around the world.

50

© Filtronic 2017

Filtronic E-Band Product Overview

• Filtronic design and manufacture E-Band system solutions for multiple applications with high levels of field reliability demonstrated

• Filtronic’s current generation E-Band transceivers operate up to 256QAM and have been proven to 10Gbps in single 2GHz channels

• Innovative architectures with a focus on high levels of integration minimise size, weight and power and enable deployment of multi-channel systems in a small envelope

• Recent focus on pushing the boundaries of performance at E-band has resulted in the development technology suitable for transmit powers >3W and receive noise figures <4dB

• Latest Filtronic E-band technology solutions are particularly appropriate for long range high capacity communications links such as High Altitude Psuedo Satellites

• Vast experience in the highly competitive backhaul market ensures cost effective solutions

51

Examples of Filtronic highly integrated E-band transceiver modules Filtronic E-band booster amplifier -Cerus

© Filtronic 2017

Test Solutions• High speed production test systems to 90GHz• Automated measurement and calibration of Tx Power and Rx Gain

• Two tone IMD 3 on Tx and Rx• Noise Figure• Rx Gain• Calibration for LO cancellation and sideband suppression• Return Loss• P1dB• Gain Flatness• All parameters can be tested over temperature.

• On wafer test to 110GHz• NF, IMD3, Power, s-parameters• Allows benchmarking of emerging devices• Allows batch wafer acceptance testing in production

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mmWave Test Solutions

© Filtronic 2017

Manufacturing Capability

• Proven track record designing, manufacturing and testing carrier grade mmWproducts – for multiple telecoms OEMs

• 26k mm Wave modules (75% E band) shipped to date making Filtronic largest independent mm-Wave transceiver manufacturer, in the world.

• Manufacturing clean rooms with multiple automated production lines

• Epoxy dispense

• Die & component placement

• Wire bonding

• Auto

• Manual

• Automated test to >90GHz

• Data management

• Supply chain management

• All manufacturing in line with MIL-STD-883

• ISO9001 certified

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© Filtronic 2017

Filtronic mm-Wave and Microwave Services

Full custom design and volume manufacturing and test services for

• E Band transceivers 71 to 86GHz

• V band transceivers 57 to 64GHz

• ODU ready E band link reference designs

• Waveguide Filters, Diplexers and OMTs 6GHz to 110GHz

• GaN High power amplifiers 6 to 11 GHz

• Multichip Modules 6 to 24GHz

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Millimetre-wave solutions for 5G backhaul - Interlligent UK · • Importance of detailed device...

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