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Transcript of MICROSYSTEMS LABORATORY DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING A CMOS Voltage Adjustable...
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MICROSYSTEMS LABORATORYDEPARTMENT OF ELECTRICAL &
COMPUTER ENGINEERING
A CMOS Voltage Adjustable All-Pass Circuit
Robert W. Newcomb
Talk for SWAN 06December 8, 2006
(Systems Workshop on Adaptive & Networks)At the Automation and Robotics Research Institute
The University of Texas at Arlington
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With Great Thanks to, and Respect for,
Frank Lewis
And especially for taking the initiative toOrganize SWAN 06
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Main topic of this talk:The design of a VLSI all-pass CMOS circuit for variable phase controlled by a voltage . Possible uses: An alternate type of phase locked loop(may have a phase noise advantage)Phase correction for various purposes.
Outline:The degree one circuit of Maundy-Aronhime; Generalization to any degreeConversion to VLSI transistors; VLSI layoutSpice simulations; MathCad symbolic analysisAt end: Some Microsystems research topics.
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Reference: B. J. Maundy & P. Aronhime, "A Novel First-Order All- Pass Filter," International Journal of Electronics, Vol. 89, No. 9, 2002, pp. 739 - 743.
The ideas are based upon the circuit of Maundy & Aronhime. Their circuit gives
Vout=2*V3-Vin Using the RC voltage divider V3={(1/sC)/[R+(1/sC)]}Vin which is
V3={1/[1+sRC]}Vin
gives the degree one all-pass transfer function
Vout/Vin=[1-sRC]/[1+sRC] = T(s)=1/T(-s)
Angle T(jw) = -2*arctan(RCw); |T(jw)|=1
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The Maundy - Aronhime Circuit
IDM2=IDM1=>VGSM1=VGSM2=>V3-Vx=Vb-0IDM4=IDM3=>VGS4=VGS3=>Vin-Vy=Vx-0IDM6=IDM5=>VGS6=VGS5=>V3-Vo=Vy-0=> Vo=V3-Vy=V3-[Vin-Vx]=V3-[Vin-(V3-Vb)]=> Vo=2V3-Vin -Vb Here Vb is a DC offset; M4&M3 require Vin offset > 2Vthreshold NMOS
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Generalization to arbitrary rational all-pass
port.-1 lossless a of impedancepoint driving the
as blesynthesiza is z(s) , thereforeand,function reactance a is d[D(s)]Ev[D(s)]/O*R z(s) where
d[D(s)]Ev[D(s)]/OR/sz
z(s)Rz(s)
z(s)/R1z(s)/R
Od[D(s)]Ev[D(s)]Ev[D(s)]
inV
3V
or
D(s)s)]/2D([(D(s)
1)inVoutV
)T(1(*)2
1(inV3V
(2) into (1)
(2) 1))in
V3
V(2(*)T(
inVoutV
set
(1) monic and Hurwitz D(s) withD(s)D(-s)
)T(in
Vout
V
D(s)N(s)
T(s)
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Transistorization for VLSI and with variable R 7
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Spice run: Phase in degrees8
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Spice run: Magnitude in DB 9
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Bias conditions for proper operation 10
Need to account for offsets due to substrates of M2, M4, M6Not connected to their sources; adds [(-Vbs)^½-^½] to VTO
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Small Signal Analysis
By replacing each transistor by its pi equivalent, and Numbering x=4, y=5, ground=6, the indefinite Y matrixis obtained. Deleting the 6th row and column yields thenodal admittance matrix.
Y11 s( )s Cg gor
0
0
s Cg gm6 go5 go6
Y12 s( )
gor
s Cgs gm6
0
0
s Cgs
s Cgd gm5
Y21 s( )
gor
0
s Cgs gm4
s Cgs
0
s Cgd
Y22 s( )
s C3 gor
s Cgs gm2
0
s Cgs
s 2 Cg( ) gm2 go2 go1
s Cgd gm3
0
s Cgd
s 2 Cg( ) gm4 go4 go3
*
Form the 2-port Y(s)=Y11-Y12*Z22*Y21 where Z22=Y22^-1From which: T(s)=-Y(s)[2,1]/Y(s)[2,2]Display by float 4 to 4 digits and then solve, for the poles and zeros at different resistor control voltages, Vr.
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Using MathCad symbolic analysis, by eliminating Internal nodes (3,4,5) the transfer function is obtained
At Vr=1; T1 s( ) .1000e-1.3408e59s
3 .4601e71s2 .4245e82s .1936e89 .5113e48s
4
.3336e47s4 .1436e59s
3 .1552e70s2 .4136e80s .1892e87
T1poles
280224017903.14247865
110019883211.21689326
40207159123.703935431
4575253.5434072945902
T1zeros
281533881897.68268219
95130927327.539115326
4560434.1831566032044
310006620783.99776471
At Vr=2; T2 s( ) .1000e-1.3407e59s
3 .4601e71s2 .4245e82s .2394e88 .5113e48s
4
.3336e47s4 .1436e59s
3 .1552e70s2 .4136e80s .2343e86
Poles
83119048162807652755.
31070021145535858293.
12849299996210576479.
2267389.3405606996897
Zeros
84495397124519949174.
25577256343187389599.
2252388.7205777607871
77665064967802876332.
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Mathcad plots from symbolic transfer function
100 1 103
1 104
1 105
1 106
1 107
200
180
160
140
120
100
80
60
40
20
0
Phase1 w( )
Phase2 w( )
w
100 1 103
1 104
1 105
1 106
1 107
0.1
1
10
A1 w( )
A2 w( )
w
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VLSI Layout for 1.2U AMI fabrication14
6 main transistors10ux10u, cap 38ux32u
Vdd
Gnd
In
OutVr
Vb
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Other research topics of Microsystems Laboratory:1. Use of ABR (=Acoustic Brain-Stem Response) for
characterizing hearing loss and creation of hearing aids.Possible use for control of Parkinsons' disease.
2. Use of Beeler-Reuter heart models for VLSI mimic of heart electrical control for effect of drugs on arrythmias.
3. Spice models for flexible transistor circuit design.
4. Spice models of DNA electrical characterization and use of braid group models of DNA type structures.
5. Use of nano sized Y-junctions for room temperature nano-computers based upon electron swarms.
6. Neural networks using single electron quantum dots.
7. VLSI realization of Prof. Roa’s neural simulink model incorporating Ca channels.
8. Wireless data collection for on patient sensors
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