Microsemi SiC Products - Eurocomp...Power Matters Customer Case Study –SiC Diode for Solar...

Power Matters

Microsemi SiC Products

James KerrDirector of MarketingPower Discrete Products

Power Matters

Diodes

SiC Schottky Diodes 650V, 1200V, and 1700V

Si Fast Recovery Epitaxial Diodes “FRED” (200V-1200V)

Si Schottky, low VF and fast switching (200V)

MOSFETs (100V-1200V) Highest Performance

SiC MOSFETs 1200V

MOSFETs

FREDFETs (MOSFET with fast body diode)

COOLMOSTM (Superjunction MOSFET)

Microsemi Power Products

Internal body diode

IGBTs (600V-1200V) Lowest Cost

PT (Punch-Thru) – short tail current

NPT (Non Punch-Thru) – low switching losses and easy to parallel

Field Stop – low conduction losses

separate diode

(combi)

© 2014 Microsemi Corporation

http://en.wikipedia.org/wiki/Image:Schottky_diode_symbol.svg

http://upload.wikimedia.org/wikipedia/commons/b/b4/Diode_symbol.svg

Power Matters© 2014 Microsemi Corporation CONFIDENTIAL 3

Silicon Carbide (SiC) ManufacturingMicrosemi SiC Wafer Fab located in Bend, Oregon USA

Complete In-house process capability since 2007

Current capacity of 200 wafers/week (100mm)

12 Issued SiC technology patents

Over 1,000,000 SiC Schottky Diodes produced

SiC MOSFETs and SiC Schottky Diodes

Production Implanter Post Implant Annealing to 1700°CMOSFET Gate Oxidation Surface Roughness to 1Å

Microsemi SiC Schottky Diodes


Power Matters

Characteristics SiC vs. Si Results Benefits

Breakdown Field 10x Higher Lower On-Resistance Higher efficiency

Band Gap 3x Higher Higher operating temperature Improved cooling

Thermal

conductivity3x Higher Higher power density Higher current capabilities

Positive

Temperature

coefficient

- Self regulation Easy paralleling

Temperature

Independent

switching behavior

-Stable high temperature

performanceLower losses

Almost no Reverse

Recovery charge-

Lower switching losses

Higher switching capabilitiesHigher performance

SiC Advantages


Power Matters

Target Markets for SiC

© 2014 Microsemi Corporation 6

Markets Applications High Temp. High Freq.Small, Light

System

Low Loss,

Efficiency

Aerospace

Actuation

Air Conditioning

Power Distribution

X X X X

Defense

Oil drilling

Motor Drives

Aux. Power Supplies X X X X

Transportation

Power Train

Fast Battery Charger

DC/DC Converters

KERS

X X X X

Solar Energy PV inverter X X X

Wind turbine Inverter X X

Industrial

Motor drives

Welding

UPS, SMPS

Induction Heating

X X X

MedicalMRI power supply

X-Ray power supplyX X X

Power Matters© 2014 Microsemi Corporation

Microsemi Advantages

Superior Passivation Technology

leads to higher reliability. Microsemi thin film passivation applied in the wafer fab vs. competitors’ spin on passivation applied post wafer fab.

Patented Technology

Junction barrier structure has a lower VF than any equivalent die size (due to larger Schottky area and buried P-Wells).

Microsemi SiC Wafer Fab

SiC MOSETs are Designed and Manufactured at Microsemi’s SiC Wafer Fab in Bend, Oregon.

650V SiC Schottky DiodesVolts

IF(avg) VF

Amps Volts Part Number Package

650

10 1.5 APT10SCD65K TO-220

20 1.5 APT20SCD65K TO-220

30 1.5 APT30SCD65B TO-247

2 x 10 1.5 APT10SCD65KCT TO-220

1200V SiC Schottky Diodes

1200

101.5 APT10SCD120B TO-247

1.5 APT10SCD120K TO-220

201.5 APT20SCD120B TO-247

1.5 APT20SCD120S D3

301.5 APT30SCD120B TO-247

1.5 APT30SCD120S D3

2 x 10 1.5 APT10SCD120BCT TO-247

1700V SiC Schottky Diodes1700 10 1.5 APT10SCE170B TO-247

Future products650V, 1200V, and 1700V 20A & 50A single chip design

Microsemi SiC Schottky Diodes

Power Matters

Customer Case Study – SiC Diode for Solar

Application

Solar Inverter – 3 level inverter, full bridge

Design Goal

Improve system reliability with new generation SiC Schottky Diode

Customer Options

• Microsemi's New 1200V 10A SiC Schottky Diode

• Competitor's Incumbent 1200V 10A SiC Schottky Diode

Customer Solution


• Improved reliability in field trial. 5,000 tested in 6 month field trial with zero failures vs. previous supplier 2% per year failure rate

• Competitive price

• Strong customer support

Microsemi’s New SiC Schottky Diode!


SiC MOSFETs vs. IGBTs


Power Matters

Transistor Power Loss Comparison

0

20

40

60

80

100

120

140

160

180

TFS IGBT PT IGBT NPT IGBT SiC MOSFET

Po

wer

Lo

ss [

W]

(30kHz, 50% duty cycle, ILOAD=15A, VOFF=800V, TCASE=80°C, TJ=125°C)

Turn-off Losses

Turn-on Losses

Conduction Losses

TJ=150°C

Power Matters

0

100

200

300

400

500

600

700

800

0 5 10 15 20 25 30 35 40 45 50

Fm

ax

[kH

z]

ILOAD [A]

(50% duty cycle, VOFF= 800V, TCASE=80°C, TJ=125°C)

SiC MOSFET (Tj=150°C)

NPT IGBT

TFS IGBT

PT IGBT

Max Switching Frequency vs. Current

Power Matters

0

50

100

150

200

250

300

350

400

0 5 10 15 20 25 30 35 40 45 50

Po

wer

Lo

ss [

W]

ILOAD [A]

(30kHz, 50% duty cycle, VOFF= 800V, TCASE=80°C, TJ=125°C)


NPT IGBT

TFS IGBT

PT IGBT

Total Transistor Power Loss vs. Current

Power Matters

Normalized Total Power Losses versus Current

0

1

2

3

4

5

6

7

8

0 5 10 15 20 25 30 35 40 45

No

rmalized

To

tal P

ow

er

Lo

ss

ILOAD [A]

(30kHz, 50% duty cycle, VOFF=800V, TCASE=80°C, TJ=125°C)


NPT IGBT

TFS IGBT

PT IGBT

Microsemi SiC MOSFETs


Power Matters

Microsemi SiC MOSFETsProduct Roadmap



• Best in class RDS(ON) vs. Temperature• Low Switching Losses• Low Conduction Losses

Voltage Current RDS(ON) Part Number Package Availability

1200V 40A 80mΩ

APT40SM120B TO-247

Available Now!APT40SM120S D3

APT40SM120J (32A) SOT-227

1200V 20A 160mΩAPT20SM120BAPT20SM120S

TO-247D3

December 2014

700V 50A 40mΩ APT50SM70BAPT50SM70SAPT50SM70J

TO-247 D3SOT-227

December 2014

1200V 80A 40mΩAPT80SM120BAPT80SM120SAPT80SM120J

TO-247 D3SOT-227

February 2015

1700V 5A 800mΩAPT5SM170BAPT5SM170S

TO-247D3

April 2015

• Short Circuit Withstand Rated• Superior Stability• Patented SiC MOSFETs

Power Matters© 2014 Microsemi Corporation CONFIDENTIAL

Best in Class RDS(ON) vs. TemperatureMicrosemi Advantage vs. Competition

11.11.21.31.41.51.61.71.81.9

22.12.22.32.4

25 50 75 100 125 150 175 200

No

rmalized

RD

SO

N(t

o 2

5 C

)

Tj [ C]

Competitor 2

80mΩ

Competitor 1

80mΩ

Microsemi

APT40SM120B

80mΩ

Microsemi

APT50SM120B

50mΩ


0

1

2

3

4

5

6

7

8

9

10

0 1 2 3 4 5

RG

(Ω)

Ultra Low Gate Resistance Minimized Switching Energy Loss & Higher Switching Frequency

AP

T5

0S

M1

20

B

50m

Ω

AP

T4

0S

M1

20

B

80m

Ω

Co

mp

eti

tor

2

Microsemi

Co

mp

eti

tor

1

Oscillation-free with

minimal external RG

Microsemi Low RG

Competition High RG


0

1

2

3

4

5

6

0 10 20 30 40 50 60 70 80

To

tal S

wit

ch

ing

En

erg

y [m

J]

Current [A]

Microsemi 80mΩMicrosemi 50mΩCompetitor 2 80mΩ

† Tc=25°C; VDD=900V

>30% less switching loss translates to cooler dynamic operations and capability

for higher switching frequencies

Switching Energy BenchmarkMicrosemi Advantage vs. Competition


Maximum Switching Frequency BenchmarkMicrosemi Advantage vs. Competition

Dynamic performance breakaway enablers:

Superior EON (ton) due to high gm, ultra low RG

Superior EOFF due to extremely low RG (yet oscillation free with very low external RG)

Low RDSON at high temperatures extends switching frequency and current capability

1.E+03

1.E+04

1.E+05

1.E+06

0 10 20 30 40 50 60

fma

x[H

z]

ID [A]

† Tj=150°C; Tc=75°C

Microsemi

APT40SM120B

80mΩ

Microsemi

APT50SM120B

50mΩ

Competitor 2

80mΩ


Competitor 1

80mΩ

Superior Short Circuit WithstandMicrosemi Advantage vs. Competition

Microsemi’s 80mΩ SiC MOSFET demonstrates 25%

longer short circuit capability

8.5µs

Microsemi

APT40SM120B

80mΩ

Competitor 1Microsemi

Power Matters

Summary – Microsemi SiC MOSFETs


Microsemi’s Best-in-Class SiC MOSFETs enable

customers to design ultra efficient high power

electronics


• Best-in-class RDS(ON) vs. Temperature

• Ultra Low Gate Resistance

• Low Conduction Losses

• Low Switching Losses

• Short Circuit Withstand Rated

• Reliable Technology Platform

SiC in Electric Vehicles


Power Matters


Toyota approximates that 20% of HV total electrical power loss occurs in the power semiconductors

One key to improving fuel efficiency is to improve power semiconductor efficiency

Compared to silicon, SiC MOSFETs operate with 1/10 the power loss and switching frequency can be increased by a factor of ten.

Increased fuel efficiency and smaller PCUs

Aim to leverage the benefits of high frequency and high efficiency to enable PCU downsizing of 80%

Over 5% fuel efficiency improvement confirmedwith SiC MOSFETs under JC08 test cycle

GOAL: Toyota is aiming for a 10% improvement in fuel efficiency with SiC MOSFETs

Source: Toyota-Denso presentation, Automotive Engineering Exposition in Japan May 2014


Power Matters

5% Cost Reduction

with SiC MOSFETs!

86%

80%

2.2%

6.2%

4.3%

2.2%

1.4%

1.0%

6.5%

6.0%

75%

80%

85%

90%

95%

100%

Si IGBT SiC MOSFET

% O

rig

ina

l C

ost

Battery Semiconductors Magnetics Passives Other

SiC in Electric VehiclesTotal Inverter & Battery Cost Reduction with SiC

350V Battery

225kW 3-Phase Inverter

- 84 Si IGBT solution (IXGX72N60B3H1)

- 60 SiC MOSFET solution (40mΩ, 700V)


Power Matters

0%

1%

2%

3%

4%

5%

6%

7%

8%

9%

10%

0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100%

Sem

ico

nd

ucto

r L

oss [

% E

ffic

ien

cy]

Inverter Load [%]

Si IGBT

SiC MOSFET

Semiconductor % Efficiency Loss versus Load

350V Battery

225kW 3-Phase Inverter

- 84 Si IGBT solution

(IXGX72N60B3H1)

- 60 SiC MOSFET solution

(40mΩ, 700V)

55

-70

mp

h



Power Matters

SiC in Electric VehiclesSiC MOSFET versus IGBT Summary

5% reduction in Inverter & Battery cost using SiC MOSFETs

7% improvement in fuel efficiency using SiC MOSFETs

Lower switching losses

Higher switching frequency

Higher temperature capable

Better current sharing when paralleled

No need for anti-parallel diode


SiC Power Modules Advantages


Power Matters© 2014 Microsemi Corporation

Technology Topology VoltageCurrent

Tc=80°C

Rdson max.

per switch

Tj=25°C

Package - Height

APTMC120TAM12CTPAG 3-Phase leg + Parallel diode 1200V 150A 12mΩ SP6P – 12mm



APTMC120AM25CT3AG Phase Leg + Parallel diode 1200V 80A 25mΩ SP3 – 12mm

APTMC120AM16CD3AG Phase Leg + Parallel diode 1200V 100A 16mΩ D3 – 30mm





Low Profile and Industry standard packages

Great design flexibility to offer modified versions!

SP1 SP3 SP6P D3

NEW PRODUCTS

28

Microsemi SiC Power Modules

Power Matters

Packaging choice will help to emphasize the best of SiC performance for the application.

High stray inductances will lead to higher oscillation and voltage spikes

Not efficient paralleling will compromise reliability of the system

Built-in internal series gate resistor for easy paralleling

SiC MOSFET and Module Packaging


62mm package – 30mm height

30nH stray inductance





29

Power Matters© 2014 Microsemi Corporation 30

SiC Module advantages vs. Discrete

Features Benefits

Higher power density Size and cost reduction

Isolated and conductive substrate Excellent thermal management

Internal wiring Less external hardware

Minimum parasitic Higher performance and efficiency

Minimum output connections Reduced assembly time

Mix & match components Optimized losses

System improvement

Performance

Reliability

Size

Cost

SiC COST

Reduced size and cost of magnetics and heatsink

Power Matters

MORE POWER

in

SMALLER VOLUME


SiC Module = Higher Power Density

ParameterMicrosemi

APTGLQ300A120G

MicrosemiAPTMC120AM20CT1AG

Comparison

SiC vs Si

Semiconductor type Trench4 IGBT SiC Mosfet

Ratings @ Tc=80°C 300A/1200V 108A/1200V

Package type SP6 – 108x62mm SP1 – 52x41mm 3x smaller

Current @ 30kHzTc=75°C, D=50%, V=600V 130A 130A -

Current @ 50kHzTc=75°C, D=50%, V=600V 60A 115A ~2.0x higher

Eon+Eoff @ 100ATj=150°C, V=600V 16.0mJ 3.4mJ 4.7x lower

Power Matters

Parallel diode to SiC MOS: to Be or not to Be?


Si MOSFET SiC MOSFET SiC ADVANTAGE

Intrinsic

Body diode

Poor

Reverse Recovery

Characteristics

Low Vf

Good

Reverse Recovery

Characterisitcs.

Higher Vf

Low SiC diode switching losses

Additional

Fast Series &

Parallel diode

Blocking diode

mandatory to avoid

slow body diode to

conduct

No Need for

blocking diode

Less components count and

less conduction losses

Additional

Parallel

diode

No advantage:

Current flow would go

to body diode only

Mandatory

to reduce high

conduction losses

of body diode

Allows full SiC-MOS

performance without limitation of

body diode losses

• SiC MOSFET Body diode is enough when operated at low duty cycle

• SiC MOSFET parallel diode required if operated at high duty cycle

• Parallel diode can be avoided if MOSFET is turned ON (Synchronous Rectification)

32

Power Matters

SiC MOSFET Gate Drive


• To minimize the diode conduction losses the SiC MOSFET should be

turned ON with VGS = 20V

• Increasing Gate voltage to 20V reduces total losses by 30%

• Negative gate bias further reduces losses,

• Vgs voltage range should be within -5V to +20V to optimize total losses

Power Matters

SiC MOSFET Power module application


Practical example:

DC Voltage = 535V

Sinusoidal RMS current = 136A out

Water cooled heat sink - inlet temperature = 14°C

DC power = 61.6kW

Efficiency = 99.2% @ Fsw=217KHz ZVS

INDUCTION

HEATING

CUSTOMER’s OBJECTIVE

MODULE COUNT REDUCTION PER SYSTEM

IMPROVED PERFORMANCE AND

RELAIBILITY

LOWER SYSTEM COST

10 x 1200V – 80mΩ SiC Mosfet per switch

12 x 1200V – 10A SiC schottky per switch

34

Power Matters

SiC MOSFET Power module application


Practical example in race car application

3-phase inverter – 3 modules per phase

100KW

DC voltage = 900V

>220A RMS @ Tc=75°C

Fsw >100kHz

AUTOMOTIVE

CUSTOMER’s OBJECTIVE

SMALLER AND LIGHTER SYSTEM

RELIABILITY

PERFORMANCE

2 x 1200V – 25mΩ SiC Most per switch

2 x 1200V – 20A SiC schottky per switch

35

9 modules size 52mm x 41mm

Power Matters 36

• SiC Schottky Diode

• Parker Hannifin custom 40A SiC Schottky Diode

half-bridge

• Cooling pump module for Boeing 787

• 20,000 pcs in 2014

Module Products

Many with SiC


Microsemi SiC in Aerospace

SiC Discrete

Products in

Aerospace

http://www.parker.com/

Power Matters

Summary – Microsemi SiC MOSFETs


Microsemi’s Best-in-Class SiC MOSFETs enable

customers to design ultra efficient high power

electronics


• Best-in-class RDS(ON) vs. Temperature

• Ultra Low Gate Resistance

• Low Conduction Losses

• Low Switching Losses

• Short Circuit Withstand Rated

• Reliable Technology Platform

Power Matters

Thank You!

Microsemi SiC Products - Eurocomp...Power Matters Customer Case Study –SiC Diode for Solar...

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