Microelettronica Anno Accademico 2006-2007 Prof. Adelio Salsano
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Transcript of Microelettronica Anno Accademico 2006-2007 Prof. Adelio Salsano
1: Introduction Slide 1CMOS VLSI Design
Microelettronica
Anno Accademico 2006-2007
Prof. Adelio SalsanoPresentazione e programma del
corso
1: Introduction Slide 2CMOS VLSI Design
OBIETTIVO
Tecnologie, blocchi elementari e architetture per l’analisi e la sintesi di circuiti e sistemi microelettronici
ALTERNATIVECircuiti non programmabili
Circuiti programmabiliCircuiti dedicatiSoluzioni miste
Il corso fornisce le competenze necessarie per la valutazione delle prestazioni di circuiti e sistemi elettronici come
prerequisito per la sintesi
1: Introduction Slide 3CMOS VLSI Design
Notizie sul corsoOrarioMercoledì 11,30 Aula 9Giovedì 11,30 Aula 7Venerdì 11,30 Aula 12
Materiale didattico Diapositive lezioni N.H.E. Weste, D. Harris “Principles of CMOS VLSI Design”,
Addison Wesley R. L. Geiger, P.E. Allen, N.R. Strader VLSIdesign techniques
for analog and digital Circuits, Mac Graw Hill Int. Ed.
1: Introduction Slide 4CMOS VLSI Design
PROGRAMMA DEL CORSO Introduzione Considerazioni generali Aspetti tecnici ed economici Richiami circuitali:
– Inverter, NAND, NOR– Pass transistor, transmission gate– Latch, flip flop– Regole di progetto
Il transistor MOS– Caratteristiche I-V– Caratteristiche C-V– Modelli delle capacità G,S,D– Effetti non ideali
1: Introduction Slide 5CMOS VLSI Design
(segue Programma) Inverter CMOS
– Caratteristiche in DC– Beta, rapporto dei beta, margini di rumore– Inverter dipendenti dal rapporto dei beta
Inverter a pass transistor e tristate Modelli RC di ritardo Tecnologie CMOS:
– Litografia,formazione del canale, ossidazione, contatti e metallizzazione
– Regole di progetto Elementi circuitali: transistor, caoacità, resistenze,
transistor bipolari, memorie
1: Introduction Slide 6CMOS VLSI Design
(segue Programma)
Stima delle prestazioni– Ritardi dei circuiti elementari: sforzo logico– Dissipazione di potenza– nterconnessioni– Margini progettuali
Affidabilità e diagnostica dei circuiti integrati: – elettromigrazione, riscaldamento, latchup– guasti transitori e permanenti – testing on line e off line– modelli di guasto– design for testability
1: Introduction Slide 7CMOS VLSI Design
(segue Programma) La simulazione circuitale: SPICE Logica a pass transistor Circuiti BICMOS Confronto tra le famiglie Logica statica e dinamica Sistemi digitali complessi: latch, flip flop, sincronizzazione
– microprocessori, memorie, logica programmabile Circuiti e sistemi analogici:
– Interruttori e resistenze attive– specchio di corrente– riferimenti di corrente e tensione – amplificatori invertenti e differenziali – amplificatore operazionale
1: Introduction Slide 8CMOS VLSI Design
Brief HistoryTill 1970 I.C. bipolar, afterwards MOSFET
SSI 1-100 MOS
MSI 100-1000 MOS
LSI 1000-100.000 MOS
VLSI 100.000 -106 MOS
ULSI > 106 MOS
1: Introduction Slide 9CMOS VLSI Design
Brief History (cont.) 1958: First integrated circuit
– Flip-flop using two transistors– Built by Jack Kilby at Texas Instruments
2003– Intel Pentium 4 processor (55 million transistors)– 512 Mbit DRAM (> 0.5 billion transistors)
53% compound annual growth rate over 45 years– No other technology has grown so fast so long
Driven by miniaturization of transistors– Smaller is cheaper, faster, lower in power!– Revolutionary effects on society
1: Introduction Slide 10CMOS VLSI Design
Vantaggi della tecnologia integrata
Dimensioni: Fette di silicio (2003) fino a 12 pollici Velocità Consumo di potenza Dimensioni del sistema Costo del sistema
Legge di MOORE: raddoppio ogni anno e mezzo del numero di componenti per chip
CHIP
1: Introduction Slide 11CMOS VLSI Design
MERCATO DEI CIRCUITI INTEGRATI
1: Introduction Slide 12CMOS VLSI Design
COMPLESSITA’ MICRO INTEL
1: Introduction Slide 13CMOS VLSI Design
FREQUENZE MICRO INTEL
1: Introduction Slide 14CMOS VLSI Design
Silicon Lattice Transistors are built on a silicon substrate Silicon is a Group IV material Forms crystal lattice with bonds to four neighbors
Si SiSi
Si SiSi
Si SiSi
1: Introduction Slide 15CMOS VLSI Design
Dopants Silicon is a semiconductor Pure silicon has no free carriers and conducts poorly Adding dopants increases the conductivity Group V: extra electron (n-type) Group III: missing electron, called hole (p-type)
As SiSi
Si SiSi
Si SiSi
B SiSi
Si SiSi
Si SiSi
-
+
+
-
1: Introduction Slide 16CMOS VLSI Design
p-n Junctions A junction between p-type and n-type semiconductor
forms a diode. Current flows only in one direction
p-type n-type
anode cathode
1: Introduction Slide 17CMOS VLSI Design
nMOS Transistor Four terminals: gate, source, drain, body Gate – oxide – body stack looks like a capacitor
– Gate and body are conductors– SiO2 (oxide) is a very good insulator– Called metal – oxide – semiconductor (MOS)
capacitor– Even though gate is
no longer made of metaln+
p
GateSource Drain
bulk Si
SiO2
Polysilicon
n+
1: Introduction Slide 18CMOS VLSI Design
nMOS Operation Body is commonly tied to ground (0 V) When the gate is at a low voltage:
– P-type body is at low voltage– Source-body and drain-body diodes are OFF– No current flows, transistor is OFF
n+
p
GateSource Drain
bulk Si
SiO2
Polysilicon
n+D
0
S
1: Introduction Slide 19CMOS VLSI Design
nMOS Operation Cont. When the gate is at a high voltage:
– Positive charge on gate of MOS capacitor– Negative charge attracted to body– Inverts a channel under gate to n-type– Now current can flow through n-type silicon from
source through channel to drain, transistor is ON
n+
p
GateSource Drain
bulk Si
SiO2
Polysilicon
n+D
1
S
1: Introduction Slide 20CMOS VLSI Design
pMOS Transistor Similar, but doping and voltages reversed
– Body tied to high voltage (VDD)– Gate low: transistor ON– Gate high: transistor OFF– Bubble indicates inverted behavior
SiO2
n
GateSource Drain
bulk Si
Polysilicon
p+ p+
1: Introduction Slide 21CMOS VLSI Design
Power Supply Voltage GND = 0 V In 1980’s, VDD = 5V VDD has decreased in modern processes
– High VDD would damage modern tiny transistors
– Lower VDD saves power VDD = 3.3, 2.5, 1.8, 1.5, 1.2, 1.0, …
1: Introduction Slide 22CMOS VLSI Design
Transistors as Switches We can view MOS transistors as electrically
controlled switches Voltage at gate controls path from source to drain
gs
d
g = 0
s
d
g = 1
s
d
gs
d
s
d
s
d
nMOS
pMOS
OFF ON
ON OFF
1: Introduction Slide 23CMOS VLSI Design
CMOS InverterA Y
0
1
VDD
A Y
GNDA Y
1: Introduction Slide 24CMOS VLSI Design
CMOS InverterA Y
0
1 0
VDD
A=1 Y=0
GND
ON
OFF
A Y
1: Introduction Slide 25CMOS VLSI Design
CMOS InverterA Y
0 1
1 0
VDD
A=0 Y=1
GND
OFF
ON
A Y
1: Introduction Slide 26CMOS VLSI Design
CMOS NAND GateA B Y
0 0
0 1
1 0
1 1A
B
Y
1: Introduction Slide 27CMOS VLSI Design
CMOS NAND GateA B Y
0 0 1
0 1
1 0
1 1
A=0
B=0
Y=1OFF
ON ON
OFF
1: Introduction Slide 28CMOS VLSI Design
CMOS NAND GateA B Y
0 0 1
0 1 1
1 0
1 1
A=0
B=1
Y=1OFF
OFF ON
ON
1: Introduction Slide 29CMOS VLSI Design
CMOS NAND GateA B Y
0 0 1
0 1 1
1 0 1
1 1
A=1
B=0
Y=1ON
ON OFF
OFF
1: Introduction Slide 30CMOS VLSI Design
CMOS NAND GateA B Y
0 0 1
0 1 1
1 0 1
1 1 0
A=1
B=1
Y=0ON
OFF OFF
ON
1: Introduction Slide 31CMOS VLSI Design
CMOS NOR GateA B Y
0 0 1
0 1 0
1 0 0
1 1 0
A
BY
1: Introduction Slide 32CMOS VLSI Design
3-input NAND Gate Y pulls low if ALL inputs are 1 Y pulls high if ANY input is 0
1: Introduction Slide 33CMOS VLSI Design
3-input NAND Gate Y pulls low if ALL inputs are 1 Y pulls high if ANY input is 0
A
B
Y
C
1: Introduction Slide 34CMOS VLSI Design
CMOS Fabrication CMOS transistors are fabricated on silicon wafer Lithography process similar to printing press On each step, different materials are deposited or
etched Easiest to understand by viewing both top and
cross-section of wafer in a simplified manufacturing process
1: Introduction Slide 35CMOS VLSI Design
Inverter Cross-section Typically use p-type substrate for nMOS transistors Requires n-well for body of pMOS transistors
n+
p substrate
p+
n well
A
YGND VDD
n+ p+
SiO2
n+ diffusion
p+ diffusion
polysilicon
metal1
nMOS transistor pMOS transistor
1: Introduction Slide 36CMOS VLSI Design
Well and Substrate Taps Substrate must be tied to GND and n-well to VDD
Metal to lightly-doped semiconductor forms poor connection called Schottky Diode
Use heavily doped well and substrate contacts / taps
n+
p substrate
p+
n well
A
YGND VDD
n+p+
substrate tap well tap
n+ p+
1: Introduction Slide 37CMOS VLSI Design
Inverter Mask Set Transistors and wires are defined by masks Cross-section taken along dashed line
GND VDD
Y
A
substrate tap well tapnMOS transistor pMOS transistor
1: Introduction Slide 38CMOS VLSI Design
Detailed Mask Views Six masks
– n-well– Polysilicon– n+ diffusion– p+ diffusion– Contact– Metal
Metal
Polysilicon
Contact
n+ Diffusion
p+ Diffusion
n well
1: Introduction Slide 39CMOS VLSI Design
Fabrication Steps Start with blank wafer Build inverter from the bottom up First step will be to form the n-well
– Cover wafer with protective layer of SiO2 (oxide)– Remove layer where n-well should be built– Implant or diffuse n dopants into exposed wafer– Strip off SiO2
p substrate
1: Introduction Slide 40CMOS VLSI Design
Oxidation Grow SiO2 on top of Si wafer
– 900 – 1200 C with H2O or O2 in oxidation furnace
p substrate
SiO2
1: Introduction Slide 41CMOS VLSI Design
Photoresist Spin on photoresist
– Photoresist is a light-sensitive organic polymer– Softens where exposed to light
p substrate
SiO2
Photoresist
1: Introduction Slide 42CMOS VLSI Design
Lithography Expose photoresist through n-well mask Strip off exposed photoresist
p substrate
SiO2
Photoresist
1: Introduction Slide 43CMOS VLSI Design
Etch Etch oxide with hydrofluoric acid (HF)
– Seeps through skin and eats bone; nasty stuff!!! Only attacks oxide where resist has been exposed
p substrate
SiO2
Photoresist
1: Introduction Slide 44CMOS VLSI Design
Strip Photoresist Strip off remaining photoresist
– Use mixture of acids called piranah etch Necessary so resist doesn’t melt in next step
p substrate
SiO2
1: Introduction Slide 45CMOS VLSI Design
n-well n-well is formed with diffusion or ion implantation Diffusion
– Place wafer in furnace with arsenic gas– Heat until As atoms diffuse into exposed Si
Ion Implanatation– Blast wafer with beam of As ions– Ions blocked by SiO2, only enter exposed Si
n well
SiO2
1: Introduction Slide 46CMOS VLSI Design
Strip Oxide Strip off the remaining oxide using HF Back to bare wafer with n-well Subsequent steps involve similar series of steps
p substraten well
1: Introduction Slide 47CMOS VLSI Design
Polysilicon Deposit very thin layer of gate oxide
– < 20 Å (6-7 atomic layers) Chemical Vapor Deposition (CVD) of silicon layer
– Place wafer in furnace with Silane gas (SiH4)– Forms many small crystals called polysilicon– Heavily doped to be good conductor
Thin gate oxidePolysilicon
p substraten well
1: Introduction Slide 48CMOS VLSI Design
Polysilicon Patterning Use same lithography process to pattern polysilicon
Polysilicon
p substrate
Thin gate oxidePolysilicon
n well
1: Introduction Slide 49CMOS VLSI Design
Self-Aligned Process Use oxide and masking to expose where n+ dopants
should be diffused or implanted N-diffusion forms nMOS source, drain, and n-well
contact
p substraten well
1: Introduction Slide 50CMOS VLSI Design
N-diffusion Pattern oxide and form n+ regions Self-aligned process where gate blocks diffusion Polysilicon is better than metal for self-aligned gates
because it doesn’t melt during later processing
p substraten well
n+ Diffusion
1: Introduction Slide 51CMOS VLSI Design
N-diffusion cont. Historically dopants were diffused Usually ion implantation today But regions are still called diffusion
n wellp substrate
n+n+ n+
1: Introduction Slide 52CMOS VLSI Design
N-diffusion cont. Strip off oxide to complete patterning step
n wellp substrate
n+n+ n+
1: Introduction Slide 53CMOS VLSI Design
P-Diffusion Similar set of steps form p+ diffusion regions for
pMOS source and drain and substrate contact
p+ Diffusion
p substraten well
n+n+ n+p+p+p+
1: Introduction Slide 54CMOS VLSI Design
Contacts Now we need to wire together the devices Cover chip with thick field oxide Etch oxide where contact cuts are needed
p substrate
Thick field oxide
n well
n+n+ n+p+p+p+
Contact
1: Introduction Slide 55CMOS VLSI Design
Metalization Sputter on aluminum over whole wafer Pattern to remove excess metal, leaving wires
p substrate
Metal
Thick field oxide
n well
n+n+ n+p+p+p+
Metal
1: Introduction Slide 56CMOS VLSI Design
Layout Chips are specified with set of masks Minimum dimensions of masks determine transistor
size (and hence speed, cost, and power) Feature size f = distance between source and drain
– Set by minimum width of polysilicon Feature size improves 30% every 3 years or so Normalize for feature size when describing design
rules Express rules in terms of = f/2
– E.g. = 0.3 m in 0.6 m process
1: Introduction Slide 57CMOS VLSI Design
Simplified Design Rules Conservative rules to get you started
1: Introduction Slide 58CMOS VLSI Design
Inverter Layout Transistor dimensions specified as Width / Length
– Minimum size is 4 / 2sometimes called 1 unit– In f = 0.6 m process, this is 1.2 m wide, 0.6 m
long
1: Introduction Slide 59CMOS VLSI Design
Summary MOS Transistors are stack of gate, oxide, silicon Can be viewed as electrically controlled switches Build logic gates out of switches Draw masks to specify layout of transistors
Now you know everything necessary to start designing schematics and layout for a simple chip!