Micro- and Nano-Technology · 2013-05-15 · Micro- and Nano-Technology..... for Optics 3.2...
Transcript of Micro- and Nano-Technology · 2013-05-15 · Micro- and Nano-Technology..... for Optics 3.2...
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
U.D. U.D. ZeitnerZeitnerFraunhofer Institut fFraunhofer Institut füür Angewandte Optik und Feinmechanikr Angewandte Optik und Feinmechanik
JenaJena
Micro- and Nano-Technology...... for Optics
3.2 Lithography
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
“Printing on Stones”
Map of Munich
Stone Print
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Contact Printing
resist
substrate
light
mask
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Mask Aligner
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Mask Aligner
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Mercury Emission Spectrume - lineghi
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Proximity Printing
resist
substrate
light
mask
proximity gap
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Projection Lithography
resist
substrate
light
mask
projection optics
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
The inverse microscope
microscope lithography
microscope lens projection lens
imageobject
image object
light source
light source
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Photolithography Examples
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ASML-Stepper
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Zeiss SMT, WO 2003/075049
… for DUV-Lithography
Stepper Objective …
…aspheric lenses
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Double Patterning
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Principle ofhalf tone masks
Principle ofgray tone masks
brightness in the wafer plane
0
1
2
-1
-2grating period or pitch > λ
0
1
2
-1
-2
0
1
2
-1
-2
0 0 0
grating period ore pitch < λ
small medium highfilling factor:
blocking of higher orders by a lens
- Sub wavelength masks- HEBS glass masks- LDW glass masks
higher orders do not exist
Physics of Half-Tone- and Gray-Tone-Masks
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
half tone mask
objective
gray tone image
pulse densitypulse width
type of masks
+1-1
Courtesy of K. Reimer, ISIT/FhG
Also possible:
- combinations
- Error diffusion
Half-Tone Lithography
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Holography Examples
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
12
3 4
5
67special features:
• adjustable angle of incidence: 0deg- 55deg ( ±1deg ) • low divergence: 0.1deg• interference filter: 313nm, 365nm, 435nm
1234567
mercury lampcollimatorpolarizerinterference filtercold-light mirrormasksubstrate
Mask Aligner With Collimated Illumination
12
3 4
5
67
oblique incidence
normal incidence Suss MA6-NFH
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
h
ϕL
-1st0thϕ0ϕ-1
d b
Two beam interference Symmetricdiffraction angles
only 0th and -1st order→ wavelength
dd
23
2 << λ
Littrow - mounting→ angle of incidence
dL 2sin
λϕ =
Parameters:• Wavelength λ / Pitch d • Angle of incidence ϕ• Groove depth h
Duty cycle f = b / d
rigorous calculations→ duty cycle and
groove depth of themask grating
Equal intensities
Mask
ResistSubstrate
Principle of Pattern Transfer
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Experimental Results
1 µm
1 µm
Mask
Copy
Phase mask Amplitude mask
1 µm
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
λ/2 < p < 3λ/2 λ/2 < p < λ
pmp
p p=pm/2
Incidence Angle
� also usable for gratings with different orientations (e.g. circular gratings)
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Laser Lithography
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
Laser Lithography – Scanning Beam
scanwidth
AOD
U~ deflection angle
substrate motion
AOM
U~ profile
mirror
focusing lens
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
DWL 400-FF Laser Writer
HIMT
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
basis system: DWL 400, Heidelberg InstrumentsLaser: He-Cd, λ=442nmmax. writing field: 200mm x 200mmmin. spot size: ∼1µmautofocus system: opticalwriting mode: variable dose (max. 64 level)
spot positioning by stage movement andbeam deflectionlateral scan (width up to 200µm at max. resolution)
writing speed: 10 – 20 mm²/min on planar substrates(depending on structure)
writing on curved substrates:substrate table: cardanic mount, tilt in two orthogonal axesmin. radius of curvature: ∼10mmmax. surface tilt angle: <10°max. sag: 30mm
DWL 400-FF Laser Writer
INSTITUTE of APPLIED PHYSICSFriedrich-Schiller University Jena
variable dose exposure:
development:
resist
substrate
intensity modulatedexposure beam
t1 t2x
y
e-beam,laser beam
writing pathsubstratemovement
• dose dependent profile depth after development process• high flexibility for arbitrary surface profiles
Lithography with variable dose exposure