mems based optical hydrogen sensor

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    MEMS Based Optical HydrogenSensors

    FABRICATION AND CHARACTERIZATION OF MEMS BASED OPTICAL

    HYDROGEN SENSORS(2012)

    HWANGIL HWANG

    SAKTHIVISHNU.R

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    Need for sensor

    Energy crisis - limited resources of fossil fuels.

    Hydrogen - most attractive energy resources for its high

    efficiency, renewability.

    Fact is environmentally friendly.

    Hydrogen - fuel for internal-combustion engines and fuel cells.

    Ubiquitous in automobiles and homes - cleaner emissions -

    industrial combustion engines.

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    Need for sensor - safety General hydrogen sensors like catalytic, electrochemical and

    semiconductor sensors use electrical leads.

    Which may induce sparks and provide a cause for ignition in

    hazardous atmospheres.

    Optical type hydrogen sensors based on fiber optics allow

    working in an explosive environment too.

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    Schematic diagram of MEMSbased sensors

    Transparent 3c-sic

    membrane

    Sensing layer

    Photovoltaic effect

    Detecting layer

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    Sensing layer

    oxide wafer

    2 m 3C-SiC thin film,

    sensing part

    Gasochromic materials of Pd

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    Gasochromic devices

    Gasochromic devices, which consists of an electrochromic layer

    and a thin catalyst coating.

    Can reversibly react with hydrogen & exhibiting significant

    changes in their optical properties.

    Transition metal oxide WO3 are well known electrochromic

    materials.

    Pure palladium has high selectively and very highly permeable

    to hydrogen.

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    An alpha-beta phase transition which occurs at temperatures

    below 310C makes the metal dimensionally unstable and liable

    to severe distortion and failure.

    Current interest in gasochromic devices arises a interest on the

    application over the optical based sensor.

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    Detection layerPhotovoltaic effect

    N-type 3C-SiC

    P-typeSi

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    Sensing part 3C SiC

    3C-SiC Schottky barrier diode - atmospheric pressure chemical

    vapor deposition technique.

    The barrier height, ideality factor and series resistance

    IV

    characteristic - 0.44 eV, 1.55 and 1.02 104, respectively.

    The transient photocapacitance measurements indicate that the

    capacitance of the 3C-SiC Schottky diode is very sensitive to

    illumination.

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    Silicon carbide is a semiconductor, which can be doped to n-

    type by nitrogen or phosphorus and p-type by aluminium,boron, gallium or beryllium

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    Responses graph

    Responses of the sensors towarddifferent

    H2 concentrations at room

    temperature for Pd.

    Pd/WO3 shows low photovoltaic

    compared with Pd only

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    Photovoltaic variations for Pd &Pd/WO3

    Non - linear response

    linear response

    R d i f Pd d

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    Response and recovery time of Pd and

    Pd/WO3 with hydrogen

    concentration

    Pd was 300, 900 sec

    Pd/WO3 was 180, 500

    sec

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    Variation of response factor (%) withhydrogen concentration.

    H2 (%) Pd Pd/WO3

    2 7.69 1.334 12.30 4

    6 34.61 5.33

    8 38.46 7.33

    10 42.3 10

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    Response factor (%)

    Response factor (%)

    = ( ) /()100

    Vinitial is the voltage measured in air

    Vresponse is the voltage at each hydrogen concentrations.

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    Conclusion

    Pd, output signal decreased at high concentration of hydrogen

    by phase transition.

    Pd/WO3 shows linear response signal with hydrogen

    concentrations.

    However, Pd/WO3 structure shows low response factors

    compared with pd.

    This means the Pd/WO3 has more low penetration ratio

    compared with Pd

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    REFERENCE

    Raman spectroscopic studies of gasochromic a-WO3 thin

    films, DCH Technology inc., Valencia CA 91355, USA

    Palladium alloy diffusion cells COMMERCIAL UNITS FOR

    THE PRODUCTION OF ULTRA-PURE HYDROGEN by

    H. Connor, B.Sc. Platinum development department, Johnson

    Matthey & co limited.

    Electrochromism - Wikipedia, the free encyclopedia

    Silicon carbide - Wikipedia, the free encyclopedia.

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    Thank you