Course Title: Microelectronic Devices and Circuits Course Number: ECEG-4121

ECTS Credit: 5 Module: Elective Contact Hours (per week): 6

Semester: VII Course status: Compulsory Lecturer: KATTASWAMY MERGU

CHAPTER 1

Modeling

1.1 General Comments

1.2 Empirical Device Models

1.3 Why Semiconductors? Why Transistors?

1.4 Circuit Models for Junction Diodes

1.4.1 Large-Signal Models

1.4.2 Static Small-Signal Linear Models

1.5 Design of rectifier circuit and computer aided analysis

CHAPTER 2:- BJT models

2.1 The Ebers-Moll Model for Uniformly Doped

One-Dimensional BJTs

2.1.1 Superposition

2.1.2 The Forward Portion

2.1.3 The Reverse Portion

2.1.4 Full Solution: The Ebers-Moll Model

2.1.5 Characteristics and Operating Regions

2.1.6 Basic Transistor Design

2.1.7 Beyond Ebers-Moll: Limitations of the Model

2.2 Circuit Models for Bipolar Junction Transistors

2.2.1 Large-Signal Models

2.2.2 Static Small-Signal Linear Models

2.2.3 Dynamic Small-Signal Transistor Models

CHAPTER 3:- MOSFET Transistors

3.1 NMOS and PMOS transistor operating principle

3.2 PMOS transistor operating principle

3.3 Modeling of MOS transistors

3.3.1 Large-Signal Model: The Gradual Channel

Approximation

3.3.2 Static Small-Signal Linear Model

CHAPTER 4:- CMOS Transistors

4.1 CMOS Inverter technology

4.2 Static characteristic of CMOS

4.3 Dynamic behavior of the CMOS inverter

4.4 Power Dissipation and Power Delay Product in CMOS

4.5 Advantages and limitations of the simulation models

Assessment/Evaluation: Attendance (5%); Assignment (20%), Chapter Quizzes (15%); Tests (20%); Final Examination (40%)

Textbook:

-References:

Computer Simulation of electronic circuits, by R. Raghuram;

Microcomputer - Aided Analysis of Electronic Circuits by M.Bialko

Data sheets and SPICE models of Texas Instruments

Microelectronics: Digital and Analog Circuits and Systems J. Millman McGraw Hill,1979