Measurement Introduction - Gunma University · 2016-12-13 · DS = 2V 20V (2V step) Measurement...
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Keita Kurihara*, H. Aoki, N. Tsukiji, S. Shibuya, M. Higashino, R. Takahashi, and H. Kobayashi Division of Electronics and Informatics, Gunma University * Email: [email protected] Introduction Electron Mobility Modeling of AlN/GaN MIS-HEMTs With Embedded Source Field-Plate Structures A28 Device Modeling Research Background Device Structure Summary Conclusion Reference The electron mobility model for drain current simulations of GaN MIS-HEMTs has been developed. The model has been implemented in MIT Virtual Source model with modifications of Verilog-A source codes. The results of HSPICE simulations showed excellent agreements with the measurements. Future work Develop Scalable model for gate length and width, gate fingers, and the number of cells Support small signal AC and transient behaviors [1] K. Chikamatsu, et al., ” SSDM2015 Conf. Dig., pp. 122-123, Sept., 2015. [2] H. Hanawa, et al., “Similarities of Lags, Current Collapse and Breakdown Characteristics between Source and Gate Field-Plate AlGaN/GaN HEMTs,” IEEE IRPS Symp. Dig., pp. CD1.1-5, June 2013. [3] U. Radhakrishna, et al., “Physics-based GaN HEMT Transport and Charge Model: Experimental Verification and Performance Projection,” IEEE IEDM, Dig., pp. 13.6.1-4, Dec. 2012. [4] H. Aoki, “Dynamic Characterization of a-Si TFT- LCD Pixels,” IEEE Trans. Electron Devices, vol. 43, no.1, pp.31-39, 1996. [5] BSIM:http://www-device.eecs.berkeley.edu/bsim/ Electron Mobility Model Measurement & Simulations Measurement Simulation V DS = 2V ～20V (2V step) Measurement Simulation V DS = 2V ～20V (2V step) Log( I ds ) 0 , 1 Leff eff Gate SFP U U U Effective channel length Gate voltage Source field plate 1.0 eff L LP Leff U UP e 2 2 2 gs th gs th Gate fm fm V V V V U UA UB T T 1 SFP ds U USFP V Surface Electric field Temperature _ s eff temp dev nom T T 2 2 2 , 1 1 eff eff s sat ds x c E E Drift Current ,0 , ds ix x sat I WQ v F Gate width Charge Drift speed of carrier Empirical function Employ MIS gate structure MIT Virtual Source Model Saturation region Excellent agreements Characterization of ESFP dependencies Apply for switching circuits For high breakdown voltage Add Embedded Source Field-Plate (ESFP) Electric Field : Concentrate ⇩ Distributed Electronic circuit simulator Id vs Vg Log(Id) vs Vg Id vs Vd New Electron Mobility Model Drain-source current : Normally-on ⇩ Normally-off Gallium Nitride(GaN) is used in spotlights as the material of semiconductor. Drain currents of GaN HEMTs are normally-on. ➔ NOT suitable for switching devices. Especially, GaN HEMT is expected to be used for high power applications. Blue LED Research Background Research Objective Research & develop the drain current model of normally-off GaN-MIS HEMTs Need many money & Time… Design Implementation Measurement Specification Evaluation Design Simulation Specification Evaluation Low cost & speedy. Modeling Model Simulation Measurement
Transcript of Measurement Introduction - Gunma University · 2016-12-13 · DS = 2V 20V (2V step) Measurement...
Keita Kurihara*, H. Aoki, N. Tsukiji, S. Shibuya, M. Higashino, R. Takahashi, and H. Kobayashi
Division of Electronics and Informatics, Gunma University
* Email: [email protected]
Introduction
Electron Mobility Modeling of AlN/GaN MIS-HEMTs
With Embedded Source Field-Plate Structures
A28
Device Modeling Research Background
Analogy with Shutter Speed
Device Structure
SummaryConclusion Reference
The electron mobility model for drain current simulations of GaN MIS-HEMTshas been developed.
The model has been implemented in MIT Virtual Source model with modifications of Verilog-A source codes.
The results of HSPICE simulations showed excellent agreements with the measurements.
Future work
Develop Scalable model for gate length and width,
gate fingers, and the number of cells
Support small signal AC and transient behaviors
[1] K. Chikamatsu, et al., ” SSDM2015 Conf. Dig., pp.
122-123, Sept., 2015.
[2] H. Hanawa, et al., “Similarities of Lags, Current
Collapse and Breakdown Characteristics between
Source and Gate Field-Plate AlGaN/GaN HEMTs,”
IEEE IRPS Symp. Dig., pp. CD1.1-5, June 2013.
[3] U. Radhakrishna, et al., “Physics-based GaN
HEMT Transport and Charge Model: Experimental
Verification and Performance Projection,” IEEE IEDM,
Dig., pp. 13.6.1-4, Dec. 2012.
[4] H. Aoki, “Dynamic Characterization of a-Si TFT-
LCD Pixels,” IEEE Trans. Electron Devices, vol. 43,
no.1, pp.31-39, 1996.
[5] BSIM:http://www-device.eecs.berkeley.edu/bsim/
Electron Mobility Model Measurement & Simulations
Measurement
Simulation
VDS = 2V～20V (2V step)
Measurement
Simulation
VDS = 2V～20V (2V step)
Lo
g(
I ds
)
0,
1
Leff
eff
Gate SFP
U
U U
Effective
channel length
Gate voltage
Source
field plate
1.0 effL LP
LeffU UP e
2
2 2gs th gs th
Gate
fm fm
V V V VU UA UB
T T
1SFP dsU USFP V
Surface
Electric field
Temperature_
seff temp
dev
nom
T
T
2 2 2,
11
eff eff
s
sat dsx
c
E
E
Drift Current , 0 ,ds i x x satI W Q v F
Gate widthCharge
Drift speed
of carrierEmpirical
function
Employ MIS gate structure
MIT Virtual Source Model
Saturation region
Excellent agreements
Characterization of ESFP dependencies
Apply for switching circuits
For high breakdown voltage
Add Embedded Source Field-Plate
(ESFP)
Electric Field : Concentrate
⇩Distributed
Electronic circuit simulator
Id vs Vg
Log(Id) vs Vg
Id vs Vd
New Electron
Mobility Model
Drain-source current : Normally-on
⇩Normally-off
Gallium Nitride(GaN) is used in spotlights
as the material of semiconductor.
Drain currents of GaN HEMTs are normally-on.
➔ NOT suitable for switching devices.
Especially, GaN HEMT is expected
to be used for high power applications.
Blue LED
Research Background
Research Objective
Research & develop the drain current model of normally-off GaN-MIS HEMTs
Need many
money & Time…
Design
Implementation
Measurement
Specification
Evaluation
Design
Simulation
Specification
Evaluation
Low cost
& speedy.
Modeling
Model
Simulation
Measurement
