Master Project Intermediate presentation – 03/07/14 Cindy Wiese.
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Transcript of Master Project Intermediate presentation – 03/07/14 Cindy Wiese.
Integration of amorphous silicon photodiodes to
microfluidic scintillation detectorsMaster Project
Intermediate presentation – 03/07/14
Cindy Wiese
Goal of the projectMicrochannels:
Vertical sidewallsTilted tipsContains the liquid scintillatorAluminium coating for light reflection
Photodiodes:p-i-n structure (in reverse voltage) to optimize
electrons collection in the depletion zoneAmorphous silicon to avoid radiation damages
Silicon
Reflective coating
PhotodiodePyrex
Channels roughnessEtching process
Etching profil along the channel width
Roughness at the middle of the channel
40% KOH etching,
60°C
40% KOH etching,
60°C + 3µm wet ox +
BHF etching
40% KOH + IPA etching,
60°C
Notching effectChannels length = 5 mm
Etching
process
Etching profil along the channel
lengthD
40% KOH
etching, 60°C
4.88 µm
40% KOH
etching, 60°C +
3µm wet ox + BHF etching
6.13 µm
40% KOH +
IPA etching,
60°C
1.26 µm
Conclusion on roughness improvement processesKOH etching + Wet ox + BHF etching:
Improve microscopic roughness
KOH + IPA etching:Improve macroscopic roughness (smoothed
profil, low notching)
Notching effect40% KOH etching
Channel
length
Etching profil along the
channel lengthD
5 mm 4.88 µm
8 mm13.34 µm
13 mm 11.9 µm
50 mm 14.6 µm
Wafers inventoryMicrofluidic tests:
Wafer n°
KOH etching
Al sputtering Bonding
1 Channels perforated
2 Wafer broken
3 Wafer broken in SPTS after TM
4 Wafer damaged by TM
5 Waiting for Anodic Bonding
Wafers inventoryScintillation detectors:
Wafer n°
KOH etching
Al sputteri
ngBonding Grindin
g
1
HCl decontamination after bonding Al etched
2 Pyrex broken
3
4
5
6 Used for measurements