MANSE Midterm Review Organic Spintronics Current team members Franklyn Burke (graduate student,...

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MANSE Midterm Review Organic Spintronics ent team members klyn Burke (graduate student, 2007-) yin Tokuc (graduate student, 2008-) . Greg Szulczewski Walton Fellow 2008-2009 n Electronics with Organic Materials”

Transcript of MANSE Midterm Review Organic Spintronics Current team members Franklyn Burke (graduate student,...

MANSE Midterm Review

Organic Spintronics

Current team membersFranklyn Burke (graduate student, 2007-)Huesyin Tokuc (graduate student, 2008-)

Prof. Greg Szulczewski SFI Walton Fellow 2008-2009“Spin Electronics with Organic Materials”

MANSE Midterm Review

Research Acitivities

• Growth of organic microcrystals and nanowires by physical vapor deposition

• Characterization of organic wires by SEM, TEM, XRD, PL, EPR, FT-IR, and SQUID magnetometery

• Fabrication of nanogap electrodes

• Set-up high impedance probe for magnetotransport studies on crystalline organic semiconductors

• Construction of UHV chamber for spin valve growth

• Transport measurements on Alq3 based MTJs

MANSE Midterm Review

Organic Crystal GrowthAl doped 8-hydroxyquinoline

rubrene

Cu phthalocyanine (CuPc)

Physical vapor deposition

Alq3

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SQUID Magnetometery of Alq3

0 25 50 75 100 125 150 175 200 225 250 275 300

0.00000

0.00002

0.00004

0.00006

0.00008

0.00010

0.00012

0.00014

0.00016

0.00018

Mag

netic

mom

ent,m

-mo (

10-3A

m2)

Temperature (K)

Field -- 1TWeight -- 63.2 mg

The concentration of paramagnetic (S= ½) defect centers in Alq3 is estimated to be: 4 x10-4/formula unit.

This yield an average defect separation of ~ 11 nm.

Al-doped8-hydroxyquinolinenanowires

Unshaved materialscavenges Fe from thestainless steel die!

MANSE Midterm Review

Alignment of crystals on electrodes

Al-doped 8-hydroxquinoline rubrenea = 24.936 Å, b = 28.551 Å, c = 3.787 Å a = 14.44 Å, b = 7.18 Å, c = 26.97 Å

Nano gap

Largest μ along B axis

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Fabrication of nano gap electrodes

UV optical lithography to prepare Deposit Pt contacts on nanowire Hall bar by electron beam deposition

Focused–ion beam etching to produce trench

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Magnetotransport in organic nanowires

Al-doped 8-hydroxyquinoline

NiFe electrodes Au electrodes

Tunneling

NNH

VRH

-5 -4 -3 -2 -1 0 1 2 3 4 50

10

20

30

40

50

30K

20K

10K

4.2K

R/R

[%

]

Magnetic Field (T)

10 15 20 25 30 35 40 45 500.0

20.0

40.0

60.0

80.0

100.0

120.0

140.0

160.0

180.0

200.0

220.0

0 T

0.5 T

1 T

5 T

(k

Oh

ms.

cm)

Temperature (K)

-4 -2 0 2 40

100

200

300

400

50 K

30 K

20 K

10 K

4.2 K

(x4)

(x10)

R

/R [%

]

Magnetic Field (T)

(x2)

-4 -2 0 2 40

100

200

300

400

50 K

30 K

20 K

10 K

4.2 K

(x4)

(x10)

Magnetic Field (T)

(x2)

-4 -2 0 2 40

100

200

300

400

50 K

30 K

20 K

10 K

4.2 K

(x4)

(x10)

Magnetic Field (T)

(x2)

-4 -2 0 2 40

100

200

300

400

50 K

30 K

20 K

10 K

4.2 K

(x4)

(x10)

Magnetic Field (T)

(x2)

-4 -2 0 2 40

100

200

300

400

50 K

30 K

20 K

10 K

4.2 K

(x4)

(x10)

Magnetic Field (T)

(x2)

-4 -2 0 2 40

100

200

300

400

50 K

30 K

20 K

10 K

4.2 K

(x4)

(x10)

Magnetic Field (T)

(x2)

MANSE Midterm Review

Rubrene crystals on NiFe electrodes

-1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

-10 -5 0 5 10

-3

-2

-1

0

1

2

3

Cu

rre

nt

(A)

Voltage (V)

70K

70K

75K

80K

100K

150K

200K

250K

290K

Cu

rre

nt (A

)

Voltage (V)

Semiconducting behavior

σ = σo exp[-(TM/T)1/(1+d)

d =1 and TM ~ 235 K 280nm gap

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Magnetotransport for rubrene on NiFe

-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6

3.82x106

3.84x106

3.86x106

3.88x106

3.90x106

3.92x106

3.94x106

3.96x106

3.98x106

4.00x106

Res

ista

nce

()

Magnetic Field (T)

70K

1V

MR proportional to T-2.25

Negative MR scales linearly at high H

Positive MR seen at low H

No MR observed using Au electrodes

Negative MR is predicted to scale as T-1.5 for 1D VRH*

*Nguyen et al. JETP 1985, 62, 1021

300nm gap

70 K

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TMR characteristics of 24 x 24μm2 junctions

2.5 nm Al2O32.5 nm Al2O3/ 1nm Alq3

The MTJ Stack: SiO2/Ta(30)/CoFe(5)/Barrier/CoFe(3)/IrMn(10)/Ta(5)/Pt(5)

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On-going work• Metal phthalocyanine (MPc) films and crystal growth M= Mn, Fe, Co, Ni, Cu, and Zn

• Deposition of vertical spin valvesin new UHV chamber

Future work

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• Fabricate lateral spin valves with different coercivity electrodes and gap separation

• Vertical spin valves with crystalline MPc’s

e.g. CoFe/MgO/MPc/LiF/Co

• Magnetometery, spectroscopy, and microscopy of FM/organic and organic/FM interfaces