Low-Power Resistive Memory with 1D and 2D Electrodes...Low-Power Resistive Memory with 1D and 2D...
Transcript of Low-Power Resistive Memory with 1D and 2D Electrodes...Low-Power Resistive Memory with 1D and 2D...
F. Xiong, Stanford
Low-Power Resistive Memory with 1D and 2D Electrodes
Feng Xiong
Co-advisor: Prof. Yi CuiCo-advisor: Prof. Eric Pop
Electrical Engineering,Stanford University
F. Xiong, Stanford
Timeline of Data Storage
2
2000
2003
2001
1995
1981
1980
1966
1956
1928
1750
1440
100
BC
4000
0 B
CCave Painting Magnetic Tape
Printing DRAM
NAND Flash Blu-Ray
Paper
Punch Card
Hard Drive
3.5ââ Floppy
2.5ââ Portable Hard Drive
SD Card
USBKey
2012
PCRAM
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Memory in Our Lives
3
32 GB
512 GB
128 GB
64 GB
32 GB
Memory Industry~ 500 GGB
~ $80 Billions
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Memory Hierarchy
Off ChipSRAM, DRAM
On Line StorageFlash, Hard-Disk Drives
Off Line StorageOptical Drives, Tapes
On ChipSRAM
G.W. Burr et al, J. of Vac. Sci & Tech. 28, 223 (2010)
*SCM = Storage Class Memory
*
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Why Power Dissipation in Memory?
J. Howard, ISSCC, p. 108 (2010)
Intel CPU power in 45nm CMOS, memory is a big piece of the pie!
ITRS 2010
trade-off between speed vs. energytrade-off between speed vs. energy
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Phase Change Memory Scaling
⢠Phase change memory is highly scalable with electrode size
⢠Use carbon nanotube (CNT) electrodes!
H.-S. P. Wong et al, Proc. IEEE 98, 2201 (2010)
S. Raoux, et al, IBM J.R.Dev. 52, 468 (2008)
PCM âMushroomâ Cell
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Outline
⢠Integrating CNT with PCMsâ Phase change materials + CNT
â Nanotube-PCM Device
â Self-Aligned PCM Nanowire-Nanotube Device
⢠CNT Crossbar RRAMâ Resistive Random Access Memory
â CNT Crossbar
⢠Graphene Ribbons with PCMâ 2D graphene ribbons
â Scalable, flexible and inexpensive
⢠Summary
0 1 2 3 40
1
2
3
4
V (V)
I (
A)
1
2
VT
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Phase Change Materials
Amorphous
â0â and â1â
>>
<<Optically
Electrically
Crystalline
Optical Drive
PCRAM
Ramorphous Rcrystalline
Ďamorphous Ďcrystalline
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Phase Change Memory Working Principle
⢠âsetâ: crystallization data rate limiting (~10 ns)
⢠âresetâ: melt-quench current and power limiting (>0.1 mA)
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Carbon Nanotube Overview
⢠Carbon nanotubes 1D cylinder of carbon atoms
⢠Excellent electrical propertiesâ High mobility ~104 cm2V-1s-1
â Current density ~109 Acm-2
(~1000Ă of Cu)â No electromigration
⢠1D heater â diameter 1~5 nm
A. Liao et al., Phys. Rev. Lett. (2008)On-chip growth by Chemical Vapor Deposition (CVD)
~2 nm
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Nanotube â PCM Device
⢠Make CNT nanogaps by AFM or electrical âcuttingâ⢠CNT nanogap filled with PCMs (here GST)⢠Iset ~ 1 ÎźA, Ireset ~ 5 ÎźA (~100Ă < conventional PCM)
0.1 1 101
10
100
I (A)
R (
M
)
OFF state
ON state
F. Xiong, A. Liao, D. Estrada, E. Pop, Science 332, 568 (2011, April 29 cover article)
Patent TF11023 Filed
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⢠Before switching, low current density low âT⢠After switching, high current density high âT crystallization⢠Small volume of PCM bit ~70 Ă 2.5 Ă 2.5 nm3 1 ÂľA switching
current
Modeling of Nanotube â PCM DeviceF. Xiong, A. Liao, D. Estrada, E. Pop, Science 332, 568 (2011, April 29 cover article)
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Scaling of Nanotube â PCM Devices
⢠Examined >100 devices
⢠Devices highly scalable with bit size
⢠Thresholds VT ~ 3-10 V, currents Iset ~ 1 ΟA,
Ireset ~ 5 ÎźA (~100Ă < conventional PCM)
0 100 200 3000
10
20
30
40
AirArFitting
0 20 40 600.1
1
10
100
OFF
ON
prepared in airprepared in Ar
Nanogap (nm)
200 400
VT (V)
V T(V
)
F ~ 100 V/Îźm
nanogapsprepared in air
in Ar
Approx. nanogap (nm)0 600
R (
MΊ
)
BA
Nanogap Size
F. Xiong, A. Liao, D. Estrada, E. Pop, Science 332, 568 (2011, April 29 cover article)
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F. Xiong, Stanford
Where Do We Go From Here?
CNT
⢠How can we improve the PCM memory with nanotube electrodes?
⢠Create nanotube + nanowire device!
PCMnanowire
F. Xiong, M.-H. Bae, Y. Dai, A. Liao, A. Behnam, E. Carrion, S. Hong, D. Ielmini, E. Pop, Nano Lett. 13, 464 (2013)
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Where Do We Go From Here?
CNT
nanogapCNT covered
by PMMA
nanotrenchin PMMA
self-alignedPCM nanowire
⢠CNT heats PMMA creates nanotrench deposit PCM lift-off PMMA⢠PCM nanowire self-aligned with CNT electrodes
⢠How can we improve the PCM memory with nanotube electrodes?
⢠Create nanotube + nanowire device!
PCMnanowire
Patent TF11063 Filed
F. Xiong, M.-H. Bae, Y. Dai, A. Liao, A. Behnam, E. Carrion, S. Hong, D. Ielmini, E. Pop, Nano Lett. 13, 464 (2013)
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Self-Aligned Nanotube-Nanowire Devices
even lower powerâŚIset ~ 0.4 ÎźA
Ireset ~ 1.6 ÎźA
0 2 4 6 80
0.2
0.4
0.6
0.8
1
V (V)
I (
A)
1st VT
10th VT
100th VT
10-1
100
101
102
103
104
10
OFF state
ON state
0.1 10.01I (ÎźA)
R (
M
)0 2500 5000 7500 10000
10-1100101102103104105
Time (s)
R (
M
)
AmorphousCrystalline
crystalline
amorphous
>1000
⢠Threshold voltage (VT) shows some âburn-inâ⢠Excellent ROFF/RON ratio (> 1000) approaches intrinsic GeSbTe limits⢠Great platform to probe other materials, self-aligned DNA, moleculesâŚ
~ 40 nm
F. Xiong, M.-H. Bae, Y. Dai, A. Liao, A. Behnam, E. Carrion, S. Hong, D. Ielmini, E. Pop, Nano Lett. 13, 464 (2013)
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100 101 102 103 104100
101
102
103
Contact Area (nm2)
RES
ET c
urre
nt ( A
)
this work
literature
RESET Current Scaling
⢠Ireset ~ A0.83
⢠CNT electrode 100à reduction in Ireset
⢠Isotropic scaling (equal scaling of all three dimensions) Ireset ~ A1
⢠non-isotropic scaling exponent of 0.83⢠Ireset /A ~ A-0.17 higher current density as device scales
I ~ A0.83
100 101 102 103 104106
107
108
109
1010
1011
Contact Area (nm2)
this work
literature
RES
ET c
urre
nt d
ensi
ty
(A/c
m2 )
F. Xiong, M.-H. Bae, Y. Dai, A. Liao, A. Behnam, E. Carrion, S. Hong, D. Ielmini, E. Pop, Nano Lett. 13, 464 (2013)
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Outline
⢠Integrating CNT with PCMsâ Phase change memory + CNT
â Nanotube-PCM Device
â Self-Aligned PCM Nanowire-Nanotube Device
⢠CNT Crossbar RRAMâ Resistive Random Access Memory
â CNT Crossbar
⢠Graphene Ribbons with PCMâ 2D graphene ribbons
â Scalable, flexible and inexpensive
⢠Summary
0 1 2 3 40
1
2
3
4
V (V)
I (
A)
1
2
VT
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Resistive Random Access Memory
Top Electrode
Bottom Electrode
V = + Vforming
V = 0
Top Electrode
Bottom Electrode
CF
Top Electrode
Bottom Electrode
V = - Vreset
V = 0Top Electrode
Bottom Electrode
Top Electrode
Bottom Electrode
V = + Vset
V = 0
Oxygen Vacancy
Oxygen Ion
Oxygen Atom
ON-state (LRS)
OFF-state (HRS)
⢠Metal oxides (AlOx, HfOx, TiOx)⢠Movement of oxygen ions in E-field
H.-S. P. Wong et al., Proc. IEEE (2012)
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CNT Crossbar RRAMC.-L. Tsai, F. Xiong, E. Pop, M. Shim, ACS Nano 7, 5360-5366 (2013)
⢠CNT crossbar electrodes ~ 2 nm2
⢠High performance and low power
-4 -2 0 2 4 610-13
10-11
10-9
10-7
10-5
|C
urre
nt (A
)|
Top Electrode Voltage (V)
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CNT Crossbar RRAM
105 106 107 108 109 1010 1011105
107
109
1011
R(high)CNT ()
Rde
vice
()
HRS
LRS
C.-L. Tsai, F. Xiong, E. Pop, M. Shim, ACS Nano 7, 5360-5366 (2013)
⢠High-resistance-state (HRS) dominated by OFF state AlOx bit⢠Low-resistance-state (LRS) scales with CNT resistance to ~ 10 MΊ
Rdevice = RAlOx + RCNT + Rcontact
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Outline
⢠Integrating CNT with PCMsâ Phase change memory + CNT
â Nanotube-PCM Device
â Self-Aligned PCM Nanowire-Nanotube Device
⢠CNT Crossbar RRAMâ Resistive Random Access Memory
â CNT Crossbar
⢠Graphene Ribbons with PCMâ 2D graphene ribbons
â Scalable, flexible and inexpensive
⢠Summary
0 1 2 3 40
1
2
3
4
V (V)
I (
A)
1
2
VT
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2D Graphene Ribbons instead of 1D CNTs?
⢠Graphene Ribbons (GRs) as building blocks:â Interconnects: High current capacity, good scalability and
flexibilityâ Transistors: Semiconducting (<10 nm width) â Sensors: High chemical sensitivity
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X. Li, et al., Science (2008). J. Cai, et al., Nature (2010). L. Jiao, et al., Nat. Nanotechnol. (2010).
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Graphene-PCM Schematics
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300 m
O2 etch
SiO2
Si++SiO2
Si++
Cu foilgraphenePMMA
S1 m
D
500 nm1 Îźm
S D
GSTAlOx
Ti/Au
Si++SiO2
Si++SiO2
O2 etchGST
Deposition gap
GST Window
Contacts
gap
A. Behnam, et al., Nano Lett. 12, 4424 (2012)A. Behnam, F. Xiong, et al., in review (2014)
GNR with GST bit
L = 2 Îźm, W = 40 nm, LG = 70 nm
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Graphene-PCM Device Characteristics
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0 5 100.0
0.5
1.0
1.5
2.0 ON State Sweeps SET Sweeps
Cur
rent
A
)
Voltage (V)
A. Behnam, F. Xiong, et al., in review (2014)
LG = 80 nmW = 30 nm
0 50 100 150 200
1
10
100
RO
N/O
FF (M
)
Time (sec)
OFF
ON
0 1 2 3 4 5 6 7 8 9 10 11 12
100
102
104
RO
N/O
FF (M
)
No. of Cycles
ON
OFF
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⢠Layered materials (on SiO2 at T = 300 K)⢠Graphene
⢠Ο â 1000 â 5000 cm2V-1s-1
⢠Transition Metal Dichalcogenides (TMD)⢠MoS2, MoTe2, WS2, WSe2⢠Ο (TMD) â 10 â 250 cm2V-1s-1
⢠Silicon on Insulator (SOI)⢠Ο degradation below d â 4 nm⢠Poor hole mobility
[1] K. Nagashio et. al. (2009) [6] Liu, et. al. (2013)[2] W. Zhu et. al. (2010) [7] Fang, et. al. (2013)[4] K. Cheng, et. al. (2009) [8] Jariwala, et. al. (2013)[5] K. Uchida et. al. (2003) [9] Kis, et. al. (2012)[6] M. Schmidt et. al. (2009) [10] Sangwan, et. al. (2013)
d ~ 0.35 nm
Graphene
d ~ 0.65 nm
MoS2
Silicon on Insulator (SOI)
Interface roughnessThickness fluctuation
d
K. Uchida et. al. (2003)
SOI
MoS2
graphene
WSe2
0 1 2 3 4
101
102
103
d (nm)
(cm
2 V-1
s-1)
Two-Dimensional Materials
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TLM
2 Âľm
⢠ĎC â 5x10-7 Ί¡cm2 at T = 300 K⢠LT â 50 nm at T = 300 K
⢠Lower deposition pressure (PD = 10-9 Torr) yields 3X improvement for Au contacts
Systematic study of contact resistance (RC)-Various contact metals: Ni, Ti, Au
-Different metal deposition pressures PD = 10-6 Torr, 10-9 Torr
[1] S. Das, et al. (2013)[2] A. T. Neal et al. (2012)
Contact Resistance to MoS2C. English, et al., DRC (2014) and submitted (2014)
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0 200 400 6001.7
1.8
1.9
2
2.1
2.2
Time (s)
V w
rt L
i (V)
In-situ Li Intercalation in MoS2
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Li+
I = -5 nA
I = -10 nA
I = -25 nA
I = -30 nA
⢠In-situ lithiation via electrochemical process
⢠Explore reversible LixMoS2 propertiesâ optical, electrical,
thermal, thermoelectric
V+
MoS2Cu
Au
ElectrolyteLiPF6
Li pellet
V-
Lithiation / Delithiation
F. Xiong, Stanford
Summary⢠Integration of CNT and PCMs⢠Nanotube-PCM Device
â 100Ă lower programming current/powerâ Device scalingâ Supported by FEM
⢠Self-Aligned Lithography-Free Techniqueâ Improve device performanceâ High on/off ratio and better endurance
⢠CNT Crossbar RRAMâ High performance and low power
⢠Graphene-PCM Deviceâ Scalable, flexible and CMOS compatibleâ Proof-of-concept
100 101 102 103 104100
101
102
103
Contact Area (nm2)
RES
ET c
urre
nt ( A
)
this work
literature
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F. Xiong, Stanford
⢠Pop Group
⢠Cui Group
⢠Collaborators
⢠Funding:â DARPA YFAâ MSD MARCOâ Office of Naval Research (ONR)â Beckman Institute Graduate Fellowship
Acknowledgments
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