Low Power Design of Integrated Systems

46
Low Power Design of Integrated Systems Assoc. Prof. Dimitrios Soudris [email protected]

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Low Power Design of Integrated Systems. Assoc. Prof. Dimitrios Soudris [email protected]. Technology Directions: SIA Roadmap. Technology Process Evolution. Technology Directions: SIA Roadmap 2002. Transistors. #Transistors. Frequency. Performance. Performance. Power Consumption. - PowerPoint PPT Presentation

Transcript of Low Power Design of Integrated Systems

Page 1: Low Power Design  of Integrated Systems

Low Power Design of Integrated Systems

Assoc. Prof. Dimitrios Soudris

[email protected]

Page 2: Low Power Design  of Integrated Systems

Technology Directions:SIA Roadmap

Technology Directions:SIA Roadmap

Year 1999 2002 2005 2008 2011 2014Feature size (nm) 180 130 100 70 50 35

Logic trans/cm2 6.2M 18M 39M 84M 180M 390MCost/trans (mc) 1.735 .580 .255 .110 .049 .022

#pads/chip 1867 2553 3492 4776 6532 8935Clock (MHz) 1250 2100 3500 6000 10000 16900

Chip size (mm2) 340 430 520 620 750 900Wiring levels 6-7 7 7-8 8-9 9 10

Power supply (V) 1.8 1.5 1.2 0.9 0.6 0.5High-perf pow (W) 90 130 160 170 175 183

Battery pow (W) 1.4 2 2.4 2.8 3.2 3.7

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Technology Process EvolutionTechnology Directions:

SIA Roadmap 2002Technology Directions:

SIA Roadmap 2002

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Transistors#Transistors

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Frequency

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PerformancePerformance

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Power ConsumptionPower consumption

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Power Terminology

• Power is the rate at which energy is delivered or exchanged» electrical energy is converted to heat energy

during operation

• Power Dissipation - rate at which energy is taken from the source (Vdd ) and converted into heat

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Why Smaller Power?

• Large Market of Portable devices– e.g. laptops, mobile phones

• Achieve larger transistor integration– Pentium IV contains 42 million transistors– Teraflops chip contains 1.9 billion

transistors

• Need for “green” computers– 10% of total electrical energy consumed by

PCs

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Battery Technology Improvements

Battery Technology Improvements

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The Industry’s Reaction

• Reduce chip capacitance through process scaling

==> Expensive

• Reduce Voltage levels from 5V ί� 3.3V ί�2V

==> Industry is hard to move (microprocessors, memory,...)

• Better Circuit Techniques

==> Gated clocks, Power-Down of non-operational units…

• Example: IBM 80 MHz PowerPC RISC (3 W @ 3.3V)–Power Management Logic determines activity on per cycle basis

–Clocks of idle blocks are turned off ί� 12-30% savings

–Doze - Nap and Sleep mode (5 mW)

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Example: Intel Pentium-II processor

• Pentium-1: 15 Watt (5V - 66MHz)• Pentium-2: 8 Watt (3.3V- 133 MHz)

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Where Does Power Go in CMOS?

• The power consumption in digital CMOS circuits Pavg = Pdynamic + Pshort-circuit + Pleakage

• Dynamic Power Consumption

• Short Circuit Currents

• Leakage (Static)

Charging and Discharging Capacitors

Short Circuit Path between Supply Rails during Switching

Leaking diodes and transistors

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Present & Future in Power Consumption

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Dynamic Power Consumption(1)

• where VDD supply voltage, CL capacitance, N is the average number of transitions per clock cycle, and f frequency operation

OUT

C L

Chargingcurrent

OUT

C LDischarging

current

(b) (c)

IN OUT

C L

(a)

V dd V dd V dd

P C V N fdynamic L dd 2

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• For technologies up to 0.35 m, the dynamic consumption is about 80% of the total consumption

• Goal ===> reduce dynamic power consumption– reduction capacitance– reduction of supply voltage– reduction of frequency– reduction of switching activity– or combination of above factors

Dynamic Power Consumption (2)

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Leakage current consumption

• the reverse-bias diode leakage at the transistor drains and

• the sub-threshold current through an turned-off transistor channel

p+ p+

n-type substrate

+V dd

leakagecurrent

reversed-biased diode(drain-substrate)

gate

The leakage of a reverse-biased pMOS transistor.0.5 1 1.5 20

10 -1510 -13

10 -9

10 -11

10 -7

10 -3

10 -5

Subthresholdregion

Saturatedregion

Decreasing V DS , V dd

Log I D

V GS , volts

Subthreshold leakage with respect to gate-sourcevoltage

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The Design Flow

SystemSpecifications

System-Level Design

Architecture-LevelDesign

Logic-Level Design

Circuit-Level Design /Layout synthesis

SystemSpecifications

System-Level Design

System-LevelAnalysis/Estimation

Architecture-LevelDesign

Architecture-LevelAnalysis/Estimation

Logic-Level Design

Logic-LevelAnalysis/Estimation

Circuit-Level Design /Layout synthesis

Circuit-LevelAnalysis/Estimation

Power modelsfor System-level

components

Power modelsfor macrocells,

control logic

Power modelsfor gates, cells

(a)

(b)

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Power savings in terms of the design level

System level

Behavior level

Logic level

Transistor level

Layout level

RT level

10-20 x

2-5 x

20-50%

Incr

easin

g po

wer s

avin

gs

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Lower Vdd Increases Delay

CL * Vdd

I=Td

Td(Vdd=5)

Td(Vdd=2)=

(2) * (5 - 0.7)2

(5) * (2 - 0.7)2

4

I ~ (Vdd - Vt)2

Relatively independent of logic function and style.

1.00

1.50

2.00

2.50

3.00

3.50

4.00

4.50

5.00

5.50

6.00

6.50

7.00

7.50

2.00 4.00 6.00Vdd (volts)

NO

RM

AL

IZE

D D

EL

AY

adder (SPICE)

microcoded DSP chip

multiplier

adder

ring oscillator

clock generator2.0m technology

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P x td = Et = CL * Vdd2

E(Vdd=2)=

(CL) * (2)2

(CL) * (5)2E(Vdd=5)

Strong function of voltage (V2 dependence).

Relatively independent of logic function and style.

E(Vdd=2) 0.16 E(Vdd =5)

0.03

0.05

0.07

0.1

0.15

0.20

0.30

0.50

0.70

1.00

1.5

1 2 5

51 stage ring oscillator

8-bit adder

Vdd (volts)

quadratic dependence

NO

RM

AL

IZE

D P

OW

ER

-DE

LA

Y P

RO

DU

CT

Power Delay Product Improves with lowering VDD.

Reducing VddReducing Vdd

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Lowering the Threshold

DESIGN FOR PLeakage == PDynamic

Vt = 0.2Vt = 0

ID

VGS

Reduces the Speed Loss, But Increases Leakage

Vdd

Delay

2Vt

Interesting Design Approach:

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Transistor Sizing for Power Minimization

Minimum sized devices are usually optimal for low-power.

Small W/L’s

Large W/L’s

Higher Voltage

Lower Voltage

Lower Capacitance

Higher Capacitance

Larger sized devices are useful only when interconnect dominated.

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Techniques to reduce supply voltage

Algorithm

Architecture

Circuit/Logic

Technology

Transformation to exploitconcurrency

Parallelism and Pipelining

Transistor Sizing, Fast LogicStructures

Threshold Voltage Reduction,Feature Size scaling

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Techniques to minimizing the switched capacitance

Partitioning, Power-down, power states

Complexity, Concurrency, Regularity,Locality, Data representation

Concurrency, Instruction set selection,Signal correlations,

Data representation, Data Encoding

Transistor sizing, Logic optimization,Power down, Layout Optimization

Advanced packaging, SOI

Architecture

Circuit/Logic

Technology

Algorithm

USystem

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13.6

4.4

910

33

rela

tive

en

ergy

/op

erat

ion

rela

tive

en

ergy

0.0

0.2

0.4

Power consumption of transfer and storage over datapath operations both in hardware [Men95] and software [Tiw94,

Gon96] .

Power consumption of transfer and storage over datapath operations both in hardware [Men95] and software [Tiw94,

Gon96] .

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Architecture Power Optimization Techniques

•Architecture-driven voltage reduction: The key idea is to speed up the circuit in order to be able reduces voltage while meeting throughput rate constraints. Voltage reduction can be achieved by introducing parallelism in hardware or inserting flip-flops

•Switching activity minimization: Try to prevent the generation and propagation of spurious transitions or to reduce the number of transitions, e.g. retiming, path balancing, data representation

•Switched capacitance minimization: Aim at the minimization of switched capacitance

•Dynamic power management: Under certain conditions, a circuit part becomes inactive, avoiding unnecessary calculations, e.g. gated clocks, operand isolation, pre-computation, and guarded evaluation

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Architecture Trade-offs: Reference Data Path

• Critical path delay Tadder + Tcomparator (= 25ns), fref = 40MHz

• Total capacitance being switched = Cref

• Vdd = Vref = 5V

• Power for reference datapath = Pref = Cref Vref2 fref

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Voltage Reduction Technique: Parallelism

• The clock rate can be reduced by half with the same throughput

fpar = fref / 2

• Vpar = Vref / 1.7 Cpar = 2.15 Cref

• Ppar = (2.15 Cref ) (Vref /1.7)2 (fref /2) 0.36 P ref

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Voltage Reduction Technique: Pipeline

• fpipe = fref, Cpipe = 1.1 Cref, Vpipe = Vref /1.7

• Voltage can be dropped while maintaining the original throughput

• Ppipe = Cpipe Vpipe2 fpipe = (1.1 Cref ) (Vref /1.7)2 fref = 0.37 Pref

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Comparisons

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Logic Style and Power Consumption

• Power-delay product improves as voltage decreases• The “best” logic style minimizes power-delay for a given delay constraint

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The concept of gating clock signals

0 1

R E G clo ck

X Y

B

A <

<

c lo ck

g a tedc lo ck

sch em e 1

<

c lo ck

g a tedc lo ck

sch em e 2

co m p a ra to ro u tp u t

g a ted c lo ck(sch em e 2 )

g a ted c lo ck(sch em e 1 )

c lo ck

0

0

0

0

1 c lo ck p er io d

(a ) (c )(b )

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Resource Sharing Can Increase Activity

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Global bus architecture Local bus architecture

Shared Resources incur Switching Overhead

Reducing Effective CapacitanceReducing Effective Capacitance

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Data representation

• Sign-extension activity significantly reduced using sign-magnitude representation

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Switching Activity in Adders

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Switching Activity in Multipliers

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Signals and Operations Reordering

• Example: complex multiplication

Trading a multiplication for an addition

(a) (b)

x

X r

x

-

X i

A rA i

Y r

x

X r

x

+

X i

A iA r

Y i

A i-A r x

X r

x

+

A r

Y i

x

X i

Y r

A i+A r

-

+

X r X i

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Module Selection

* **i ii iii

+ i

+ ii

(a)

(c)

(d)

* **i ii iii

+

+ ii

*ii iii

+ i

+ ii

** i

Area =2744

Latency=30 ns

Power=1199μW

rippleadder

carryloohahead

adder

Area =3959

Latency=20 ns

Power=1467μW

arraymultiplier

wallacemultiplier

Area =16185

Latency=60 ns

Power=18540μW

Area =18443

Latency=40 ns

Power=23545μW

RTLLibrary

(b)

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Glitching activity reduction (3)

x y

z

ARCHITECTURE 1

Power Consumption:Without glitches: 823.9 μWWith glitches: 1650 μW

ARCHITECTURE 2

Power Consumption:Without glitches: 951.7 μWWith glitches: 1357.7 μW

Functionif (x < y) then z=c+delse z=a+b

a c

0 1

x y

a b c db d

0 1

0 1

z

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Two-Level Logic Circuits Switching Activity Minimization (1)

• Taking into account the static and transition probabilities (i.e. temporal correlation) of the primary inputs, we can insert in certain gates of the first logic level (i.e. AND gates), additional input signals resulting into reduced switching activity

• Appropriately-selected input signals force the outputs of the AND gates to logic level zero for a number of combinations of the binary input signals

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Two-Level Logic Circuits Switching Activity Minimization (2)

• Example:

• Signal x3 exhibits low-transition probability and high static-1 probability, while the signals x0 , x1, and x2 are characterized by high-transition probabilities

F'g4g4

g 1

g 2

g 3

x 0x 1

x 0x 2

x 0x 3

x 3

'y 1

'y 2

'y 3

Fg4

g 1

g 2

g 3

x 0x 1

x 0x 2

x 0x 3

y 1

y 2

y 3

g 4

Intial Logic Circuit Modified Logic circuit

F x x x x x x 0 1 0 2 0 3

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• A. Chandrakasan and R. Brodersen, “Low Power CMOS Design”, Kluwer Academic Publishers, 1995

• Christian Piguet, Editor, « Low-Power Electronics Design”, CRC Press, November 2004

• D. Soudris, C. Piguet, C. Goutis, “Designing CMOS Circuits for Low-Power”, Kluwer Academic Press, October 2002

• F. Catthoor, K. Danckaert, et. al.: 2002, Data Access and Storage Management for Embedded Programmable Processors. Kluwer Academic Publishers

• Stamatis Vassiliadis and Dimitrios Soudris, “Fine- and Coarse-Grain Reconfigurable Computing” Springer, Dordrecht/London/Boston, August 2007

• http://vlsi.ee.duth.gr/~dsoudris• AMDREL website http://vlsi.ee.duh.gr/amdrel

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