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Transcript of Logic Design with Memristors - Technionacrc.ee.technion.ac.il/uploads/file/workshop 07_03...
![Page 1: Logic Design with Memristors - Technionacrc.ee.technion.ac.il/uploads/file/workshop 07_03 /Shahar... · Memristors are Useful for Logic •Two terminal resistive device •Not only](https://reader031.fdocuments.net/reader031/viewer/2022021418/5aac8c2e7f8b9a8d678d0af3/html5/thumbnails/1.jpg)
Logic Design
with Memristors
Shahar Kvatinsky
Technion – Israel Institute of Technology ACRC Workshop March 2012
1
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Memristors are Useful for Logic
• Two terminal resistive device
• Not only memory
• This talk is about
memristor-based logic circuits
2
Resistor
v R i
Capacitor
q C v
Inductor
L i
Memristor
M q
Chua, “Memristor – The Missing Circuit Element,” IEEE Trans., 1971
Chua and Kang, “Memristive Devices and Systems,” Proceedings of the IEEE, 1976
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RON
ROFF
Voltage [V] C
urr
en
t [m
A]
Logic with Memristors
• Memristors as a building block
• Memristor can:
– Store an input value
– Store an output value
– Perform logic operation
– Act as a state register (latch, Flip-Flop)
– Act as a configurable switch
3
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Why Use Memristors in Logic?
Integrating memristors with standard logic
4
Logic inside the memory
Memristor layer
CMOS
layer
Save die area
More logic on die Beyond Von-Neumann
Flexible
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Memristor Polarity
5
Decrease resistance Increase resistance
Current
Voltage
Current
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Outline
• Motivation / Why logic with memristors?
• Integrating memristor with standard logic
• Memristor-based logic inside the memory:
– IMPLY logic Gate
– Memristor Aided LoGIC (MAGIC)
• Design methodology
• Conclusions
6
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AND and OR (Eshraghian 2011)
• Voltage as logic state
• Memristors only as computational elements
7
K. Eshraghian, course notes on “Memristive Circuits and Systems,” Technion, June 2011
OR AND
IN1 IN1
IN2 IN2
OUT OUT
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AND Operation
8
K. Eshraghian, course notes on “Memristive Circuits and Systems,” Technion, June 2011
Decrease resistance
AND IN2 IN1
0 0 0
0 1 0
0 0 1
1 1 1
ROFF
RON
0
0
No current 0
1
1
1
Increase resistance
ROFF >> RON
~0
IN1
IN2
OUT
ON ONOUT CC CC CC
ON OFF OFF
R RV V V V
R R R
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AND to OR
9
K. Eshraghian, course notes on “Memristive Circuits and Systems,” Technion, June 2011
AND IN2 IN1
0 0 0
0 1 0
0 0 1
1 1 1
IN1
IN2
OUT
OR IN2 IN1
0 0 0
1 1 0
1 0 1
1 1 1
AND OR
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OR Operation
10 K. Eshraghian, course notes on “Memristive Circuits and Systems,” Technion, June 2011
OR IN2 IN1
0 0 0
1 1 0
1 0 1
1 1 1
1
0
Increase resistance
Decrease resistance
RON
ROFF
~1
OFFOUT CC CC
ON OFF
RV V V
R R
ROFF >> RON
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Need for Amplification
• Chain of memristor-based logic gates
11
AND
OR
0
VCC
VCC
0 OR
1 V
1 V
ONCC
ON OFF
RV
R R
OFFCC
ON OFF
RV
R R
0.97 V
OFF ON OFFCC
ON OFF ON OFF
R R RV
R R R R
0.01V
0.99V
VCC = 1V
RON = 100 Ω
ROFF = 10 kΩ
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CMOS Compatibility
• Memristors can be fabricated with CMOS
• Input/output are voltages – as in standard CMOS logic
• Amplify signal – signal restoration
12 K. Eshraghian, course notes on “Memristive Circuits and Systems,” Technion, June 2011 J. Borghetti etl al, “A Hybrid Nanomemristor/Transistor Logic Circuit Capable of Self-Programming,” PNAS 2008
AND OR
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Integrating Memristor with Standard Logic - Summary
• Good for integration with standard logic
• Signal restoration through CMOS
• Save die area: 2 transistor - 2 memristor
• CMOS - memristor layer transition:
vias, power and area overhead
13
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Outline
• Motivation / Why logic with memristors?
• Integrating memristor with standard logic
• Memristor-based logic inside the memory:
– IMPLY logic Gate
– Memristor Aided LoGIC (MAGIC)
• Design methodology
• Conclusions
14
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Logic Inside the Memory
• Based on memristor-based crossbar memory
15
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RON
ROFF
Voltage [V] C
urr
en
t [m
A]
Logical State as Resistance
• RON → logical ‘1’, ROFF → logical ‘0’
• The input of the logic gate is the
memristor-based cells value
• The result is stored into the
memory
16
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IMPLY Function
17
p IMP q q p
1 0 0
1 1 0
0 0 1
1 1 1
If p then q
p → q
IMPLY + FALSE Complete logic
• One of the elementary 2 input Boolean functions
Truth Table
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IMPLY Logic with Memristors
18
p IMP q q p
1 0 0
1 1 0
0 0 1
1 1 1
Logic 0 → ROFF
Logic 1 → RON
ON G OFFR R R
| | | |COND SETV V
J. Borghetti et al, “Memristive Switches Enable „Stateful‟ Logic Operation via Material Implication,” Nature, 2010
IN IN OUT
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Behavior for Different Cases
20
p IMP q → q q p Case
1 0 0 1
1 1 0 2
0 0 1 3
1 1 1 4
IN OUT Decrease resistance
~1 V
0.5 V 1 V
1 kΩ
RON = 100 Ω
ROFF = 10 kΩ
10 kΩ ~0 V
100 Ω 100 Ω ~0.5 V
~0.5 V
10 kΩ
State Drift S. Kvatinsky et al, “Memristor-based IMPLY Logic Design Procedure,” ICCD, 2011
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Performance and Robustness Tradeoff
21
p IMP q → q q p Case
1 0 0 1
1 1 0 2
0 0 1 3
1 1 1 4
Write time
State drift
TRADEOFF
IN OUT Refreshing the gate
S. Kvatinsky et al, “Memristor-based IMPLY Logic Design Procedure,” ICCD, 2011
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General Functions with IMPLY
• Sequential operation of IMPLY and FALSE
• NAND:
– Step 1 – FALSE(S)
– Step 2 – P IMPLY S
– Step 3 – Q IMPLY S
• 1- bit Full Adder
– Naive approach: 89 computation steps
– Parallel approach: 5 computation steps
22
1-bit Full
Adder
A B
Cin Cout
S Wald and Satat B.Sc. Project, Technion 2012
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IMPLY Summary
• Performance and robustness tradeoff
• Need for refresh because of state drift
• For general Boolean function needs many
computation stages:
– Slow
– Complex controller
– Power consumption
23 S. Kvatinsky et al, “Memristor-based IMPLY Logic Design Procedure,” ICCD, 2011
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Outline
• Motivation / Why logic with memristors?
• Integrating memristor with standard logic
• Memristor-based logic inside the memory:
– IMPLY logic Gate
– Memristor Aided LoGIC (MAGIC)
• Design methodology
• Conclusions
24
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MAGIC – Memristor Aided LoGIC
25
AND
OR
NAND
S. Kvatinsky et al, “MAGIC: Memristor Aided LoGIC,” unpublished 2012
NOR
• One applied voltage VG
• Separate input and output memristors IN1 IN2 OUT
IN1
IN2
OUT
VG
VG
IN1 IN2 OUT VG
IN1
IN2
VG
OUT
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MAGIC NOR
26
NOR IN2 IN1
1 0 0
0 1 0
0 0 1
0 1 1
RON
S. Kvatinsky et al, “MAGIC: Memristor Aided LoGIC,” unpublished 2012
ROFF >> RON
ROFF
ROFF <<VG
Increase resistance
>VG/2
ROFF
RON
RON
State drift
Initialize OUT to RON
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MAGIC NOR in Crossbar
27
S. Kvatinsky et al, “MAGIC: Memristor Aided LoGIC,” unpublished 2012
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MAGIC - Summary
• Good for logic inside the memory
• Separate input and output memristors
• Easy and intuitive
• State drift phenomenon - noise margin issues
28 S. Kvatinsky et al, “MAGIC: Memristor Aided LoGIC,” unpublished 2012
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Outline
• Motivation / Why logic with memristors?
• Integrating memristor with standard logic
• Memristor-based logic inside the memory:
– IMPLY logic Gate
– Memristor Aided LoGIC (MAGIC)
• Design methodology
• Conclusions
29
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Need Design Methodology
• Decide which family to use
• Determine proper circuit parameters
– RG?
– Voltage levels? VCOND? VSET?
– Logic gate delay?
30 S. Kvatinsky et al, “Memristor-based IMPLY Logic Design Procedure,” ICCD, 2011
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Developing Design Methodology
• IMPLY logic gate design methodology (ICCD 2011)
• Developing a complete design methodology
• General design constraints:
– Power
– Area
– Performance
• Specific design constraints
31 S. Kvatinsky et al, “Memristor-based IMPLY Logic Design Procedure,” ICCD, 2011
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Outline
• Motivation / Why logic with memristors?
• Integrating memristor with standard logic
• Memristor-based logic inside the memory:
– IMPLY logic Gate
– Memristor Aided LoGIC (MAGIC)
• Design methodology
• Conclusions
32
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Logic with Memristors
Many issues – huge opportunities!
33
MAGIC IMPLY Hybrid
Reduce die area
More computation on die
Beyond Von-Neumann architecture
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BACKUP
35
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Conventional FPGA
• FPGA power consumption:
– 90% - SRAM (routing)
– 10% - computing
LB – logic blocks
CB – connection blocks
SB – switching blocks 38
Cong and Xiao, “mrFPGA: A Novel FPGA Architecture with Memristor-Based Reconfiguration,” NANOARCH 2011
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Switching and Connection Blocks
• Memristor as configurable switch
• 1.6X better power consumption
• 2.28X better critical path delay
39 Xia et al, “Memristor-CMOS Hybrid Integrated Circuits for Reconfigurable Logic,” Nano Letters 2009
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Logic Block
• LUT with 1T1M instead of SRAM
40 Liu and Wang, “rFPGA: Exploring RRAM Application in FPGA,” NANOARCH 2008
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Linear Ion Drift Model
41
Write time
State variable - w
Memristance MQ
Time [nsec]
Case 3
Case 1
p IMP q q p Case
1 0 0 1
0 0 1 3
State drift
S. Kvatinsky et al, “Memristor-based IMPLY Logic Design Procedure,” ICCD, 2011 Time [nsec]
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Design Flow
42
Understand circuit behavior and determine
state at beginning of operation
Simplified memristor
switching model
Roughly determine circuit parameters
Detailed memristor
model
Estimate the final
parameters
S. Kvatinsky et al, “Memristor-based IMPLY Logic Design Procedure,” ICCD, 2011
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8-bit Full Adder Example
43
C_out S C_in B A
0 0 0 0 0
0 1 1 0 0
0 1 0 1 0
1 0 1 1 0
0 1 0 0 1
1 0 1 0 1
1 0 0 1 1
1 1 1 1 1
1-bit Full Adder
A B
C_in C_out
S
in
out in
S A B C
C A B C A B
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General Design Constraints
• Power consumption
• Performance – gate delay time
• Area – number of memristors (and transistors)
44
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IMPLY Design Constraints
• Power – determine VSET and VCOND
• Performance - minimize computation steps
• Area - minimize number of memristors
• Solution – parallel computing
45
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8-bit IMPLY Full Adder
• Naive approach:
– 89 computation steps per bit
– 3 memristors per bit + 5 memristors
• Improved approach:
– Parallel computing, scheduling
– 5 computation steps per bit (+18)
– 9 memristors per bit (72 total) 46
Wald and Satat B.Sc. Project, Technion 2012
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Hybrid CMOS-Memristor Design Constraints
• Minimize number of CMOS-memristor
transitions (number of vias)
• Solution: use inverter (or buffers) only when
necessary
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8-bit Hybrid CMOS-Memristor Full Adder
• 144 memristors
• Area and vias is depended on memristor behavior:
– Linear memristor – 160 transistors, 80 vias
– Nonlinear memristor- 256 memristors, 96 vias
48 Wald and Satat B.Sc. Project, Technion 2012
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Design Summary
49
Hybrid CMOS-Memristor
IMPLY
6X faster 1 step
Sequential 58 steps
Performance
144 memristors 72 memristors 2X smaller
Area – memristor layer
Memristor behavior 80-96 transistors
Controller Area – CMOS layer
Static and dynamic More power
Dynamic power
Power