LED PACKAGING Market, Technology and Industry Landscape · PDF fileFromTechnologies to Market...
Transcript of LED PACKAGING Market, Technology and Industry Landscape · PDF fileFromTechnologies to Market...
From Technologies to Market
LED PACKAGING
-
Market, Technology and Industry Landscape
2017 Sample
Market and Technology ReportSource: Nasa
2
REPORT OBJECTIVES
This report serves to detail:
• LED industry and market status
• Process flows and technologies in LED packaging
• Recent LED packaging trends
• The importance of cost reduction in LED packaging
• Who is doing what
This report also provides market
• metrics at the LED material level
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REPORT METHODOLOGY
Market segmentation methodology
Market forecast methodology
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REPORT METHODOLOGY
Technology analysis methodology Information collection
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o About the Author of the Report P8
o Glossary P9
o Executive Summary P10
o Status of the LED Industry (1/2) P35
LED Epitaxy Capacity Trends
• GaN MOCVD Capacity Evolution per Region (2010-2016)
• Top 10 Global LED Chip Manufacturers by Capacity
• Focus on China
• Top-20 LED Chipmakers In China
• Analysis
• GaN MOCVD Capacity Supply vs. Demand Trends
• Capacity and Wafer Start Geographic Breakdown
Packaged LED Market and Industry Trends
• Segmentation of Packaged LEDs
• History of LED Industry
• Market landscape
• Industrial Landscape
• Key Highlights
• Packaged LED Revenue Forecast - Split by Application
• Packaged LED Volume Forecast
• Split by Application
• Split by Package Type
• Split by Chip Type
• 2015 in a nutshell
• 2016 in a nutshell
• LED Market Trends
• Displays
• General Lighting
• Video Projector for Outdoor Display
• LED Packaging Companies Overview
o Status of the LED Industry (2/2) P35
Leading LED Packaging Companies / Regions
• Top-10 Players Revenue Analysis (2012 - 2015)
• 2015 Top-30 Players
• Market Shares Evolution per Region
• Trends
Zoom on Chinese Packaged LED Market and Industry
• Chinese Packaged LED Market and Industry Overview
• Top-30 LED Packaging Companies
• Overview
• Geographical Distribution
• 2015 Revenue
• Capacity (as of Q3-2016)
• Global Trends
Recent Trends in the Packaged LED Industry
• Overview
• Application Diversification - Automotive Lighting
• Vertical Integration - Module Level
• Vertical Integration - System Level
• Product Diversification - UV LEDs
• Product Diversification - IR LEDs
o LED Package Development (1/2) P78
Introduction
GaN-on-Si LEDs and GaN-on-GaN LEDs
• GaN-on-Si LEDs
• GaN-on-GaN LEDs
• Trends
Chip on Board (COB) LEDs
• Introduction
• Positioning - Package or Module?
• Drivers for Integration
TABLE OF CONTENT (1/6)
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o LED Package Development (2/2) P78
Chip on Board (COB) LEDs
• Technology Trends
• High Density COB
• Spectrum Enhanced COB
• COB Evolution
• Industry
• Overview of Suppliers
• Main Areas of Development
• Manufacturing Process
• Market Segmentation and Uses
• COB LED Volume Forecast (2012 - 2021)
LED Filaments
• Overview
• Substrate Materials
• Manufacturing Process
• Performance and Cost
• Industry Trends
Flip Chip LEDs
• Introduction
• Benefits
• Key Players
• Applications
• TV
• Flash
• Automotive and General Lighting
• Flip Chip LED Volume Forecast (2012 - 2021)
Chip Scale Package (CSP) LEDs (1/2)
• Introduction
• Benefits
• CSP vs. Conventional Package
• Differences in CSP Architectures / Packages
Chip Scale Package (CSP) LEDs (2/2)
• CSP Cost Structure
• Low and Middle Power LEDs
• High Power LEDs
• Manufacturing Process
• Challenges
• Overview
• CSP Assembly onto Module / PCB
• Industry
• Key Players
• Highlights on US and European Manufacturers
• Highlights on Japanese Manufacturers
• Highlights on Korean Manufacturers
• Highlights on Taiwanese Manufacturers
• Highlights on Chinese Manufacturers
• Applications
• Flash
• Backlighting
• General Lighting
• Market Opportunities and Challenges
• CSP LED Volume Forecast (2012 - 2021)
o Overview of LED Packaging P144
The Functions of LED Packaging
Key Components of a Packaged LED
LED Packaging Typical Process Flow
Trends in GaN LED Chip Designs
Low and Middle Power LED Packaging
High Power LED Packaging
LED Package Power vs. Application
Cost Structure of Packaged LED
Supply Chain (Equipment and Material)
TABLE OF CONTENT (2/6)
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o Wafer Bonding P158
Position in the Process Flow
Synthesis
Introduction
Process Selection
Technologies (Status, Trends and Alternatives)
Carrier Substrate
Equipment Suppliers
Miscellaneous - IP Aspects
o Substrate Removal P168
Position in the Process Flow
Synthesis
Introduction
Technologies
Laser Lift Off
• Overview
• Equipment Suppliers
• IP Aspects
• Yield Aspects
Chemical Lift Off
Other Techniques
The Case of GaAs-Based LEDs
o Die Singulation P180
Position in the Process Flow
Synthesis
Introduction
Overview of Die Singulation Techniques
Diamond Scribing
UV Laser Scribing
Scribing & Breaking - Comparison of Scribing Techniques
Blade Dicing
• Overview
• Advantages & Drawbacks
Laser Dicing / Ablation
• Overview
• Advantages & Drawbacks
• Focus on Serial Multibeam Laser Dicing
Stealth Dicing
• Overview
• Comparison with Traditional Dicing Techniques
Plasma Dicing
• Introduction
• Technologies of Panasonic and Plasma-Term
Global Benchmark of Dicing Technologies
Comparison of Die Singulation Technologies for LED
Cost Aspects
Dicing (and Backgrinding) Tape
Equipment Suppliers
Market Share by Technology
o Packaging Substrates (1/2) P205
Position in the Process Flow
Synthesis
Introduction
Low and Middle Power Packaged LEDs
• Overview
• New Materials (PCT, EMC, SMC and Ceramic)
High Power Packaged LEDs
• Thermal Management of High Power LEDs
• Leadframe Substrates
• Ceramic Substrates
• Choosing the Substrate Type
TABLE OF CONTENT (3/6)
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o Packaging Substrates (2/2) P205
Chip On Board
• Substrate Comparison - MCPCB vs. Ceramic PCB
• COB vs. Package Substrate
Packaging Substrate Market
• Substrates vs. Circuit Board Material Options
• Choosing the Right Substrate
• High Power LED Substrate - Market Share by Substrate Type
• High Power LED Substrate Volume and Revenue Forecast (2012 -2021)
o ESD Protection P245
Position in the Process Flow
Synthesis
ESD / EOS Issues of High Power LEDs
Where are ESD / TVS Diodes Used?
Typical Symptom of ESD / EOS Damage
Zener / Avalanche Diodes
• Overview
• Illustration
• Trends
Zener / Avalanche Diodes Suppliers
Zener / Avalanche Diodes Volume and Revenue Forecast (2012 - 2021)
o Die Attach (1/2) P257
Position in the Process Flow
Synthesis
Introduction
Overview of Materials and Techniques
Resin / Adhesives
• Epoxy, Acrylic and Silicone
• Silver-Filled Epoxy
• Gold-Filled Epoxy
o Die Attach (1/2) P257
HMP Eutectic Soldering
• Au/Sn Solder Paste
• Metallization Techniques
• Flux Eutectic vs. Direct Eutectic
Silver Sintering
Potential Failure Associated to Die Attach
Comparison of Die Attach Techniques
• Gluing vs. Soldering
• Matching with Packaging Substrate
Die Attach Material vs. LED Package Power (and Applications)
Die Attach Technique vs. LED Package Type
Die Attach Material Volume and Revenue Forecast (2012 - 2021)
o Interconnections P286
Position in the Process
Synthesis
Overview
Wire Bonding
• Overview
• Comparison of Techniques
• Challenges
• Typical Failure
• Alternative - Ribbon Bonding
Flip Chip
• Overview
• Layout Principles and Technologies
• Main Techniques
• Underfill
• Trends
TABLE OF CONTENT (4/6)
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o Encapsulation / Primary Optics P316
Position in the Process Flow
Synthesis
Introduction
Materials
• Overview
• Epoxy vs. Silicone
• Silicone (Overview and Comparison of Silicone Types)
Process
• Overview of Main Techniques
• Dispensing
• Molding
• Transfer vs. Compression Process
• Processability
• Comparison (Dispensing vs. Molding)
Interactions Encapsulant / Phosphors
• Overview
• Focus on Phosphor Sedimentation
• Focus on Chemical Compatibility
Failure Mechanisms
Material Suppliers (Overview, Analysis, Emerging Players & Recent Exits)
The Case of Packaged LED Lens
• Manufacturing Process
• Material
Trends
• Epoxy vs. Silicone
• Other Developments
Price Trends
Encapsulant Volume and Revenue Forecast (2012 - 2021)
Packaged LED Lens Material Volume and Revenue Forecast (2012 -2021)
o Phosphors (1/2) P350
Position in the Process Flow
Synthesis
The Different Ways to Generate White Light!
Key Requirements for LED Downconverters
LED Downconverters for Display Applications
LED Downconverters for Lighting Applications
Major White LED Designs
• Downconverter Combinations
• Trends
Configurations and Deposition Methods
On-Chip Configuration
• Overview
• Comparison
• The Case of CSP
Remote Phosphor
Material / Compositions
• Yellow Phosphors
• Green and Red Phosphors
• Focus on Garnets
• Focus on Silicates
• Focus on Nitrides and Oxynitrides
• Focus on Mn4+ Red Phosphors (PFS / KFS)
• Focus on “UV Chip + RGB Phosphor” Solutions
• Trends
• Timeline
• Application Matrix
Competitive Landscape
• Overview
• Focus on China
TABLE OF CONTENT (5/6)
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o Phosphors (2/2) P350
Price Trends
• Introduction
• Focus on YAG and Nitrides
Quantum Dots
• Benefits & Challenges
• Display Applications
• Lighting Applications
Phosphor Volume Forecast (2012-2021) - Remote vs. On-Chip
Phosphor Revenue Forecast (2012-2021) - Split by Material
o Wafer Level Packaging P394
Synthesis
Overview
Manufacturing Status of WLP
True WLP
Technology Challenges
Trends
o Conclusion P402
o Appendix P406
TABLE OF CONTENT (6/6)
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Biography & contact
ABOUT THE AUTHORS
Pars Mukish
Pars Mukish holds a master’s degree in Materials Science & Polymers (ITECH - France) and a master’s degree in Innovation &Technology Management (EM Lyon - France). Since 2015, he has overseen developing LED, OLED, and sapphire activities as aBusiness Unit Manager at Yole Développement. Previously, Pars worked for several years as a Marketing Analyst and Techno-Economic Analyst at the CEA (French Research Center).
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Sample of the report
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Total MOCVD capacity increased almost by a factor x5 since 2010 driven mostly by China (x25).
GaN MOCVD Capacity Evolution per Region (2010-2016)
LED EPITAXY CAPACITY TRENDS
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LED packaging companies have emerged in time in what could be simplistically summarized as 4 waves:
• 1st wave: The technology pioneers which developed GaN chips and white LED technologies through the 1990’s are usually referred to in theindustry as the big 5.
• 2nd wave: A large group of LED companies later appeared in Taiwan composed of start ups leveraging technologies developed by the IndustrialTechnology Research Institute (ITRI) as well as existing optoelectronic components manufacturers leveraging on their existing competences andinfrastructure to enter the high brightness LED business.
• 3rd wave: After year of R&D and strong IP activities, both LG and Samsung invested massively in LED chip and packaging capacity in order topartially supply internal needs for LCD TV backlight and positioning themselves for future growth in the lighting business.
• 4th wave: The strong focus on energy and technology in the China’s 12th 5-year plan made vast amount of subsidies available in order to develop astrong LED supply chain from chips to systems.This resulted in the emergence of 100’s of new LED packaging and luminaire companies.
History of the LED industry - Industrial landscape
STATUS OF THE LED INDUSTRY
1st wave:“The big 5”
• Nichia (JP)
• Toyoda Gosei (JP)
• Osram (EU)
• Philips Lumileds (US)
• Cree (US)
2nd wave:Taiwan and Korea “start ups” and new entrants
• Everlight (TW)
• Oasis (TW)
• Unity Opto (TW)
• Edison Opto (TW)
• Lite On (TW)
• Harvatek (TW)
• Kingbright (TW)
• BrightLED (TW)
• Seoul Semiconductors (KR) (…)
3rd wave:The Korean Chaebols
(Conglomerates)
• LG (KR)
• Samsung (KR)
4th wave:China’s12th 5-Year Plan
• Honglitronics (CN)
• Nationstar (CN)
• Refond (CN)
• MLS (CN)
• Jufei (CN)
• Mason (CN) (…)
1995 - 2000 2000-2006 2007-2008 2011-2015
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Smart lighting will provide a further boost to lighting applications.
We expect “planned obsolescence” to become part of the luminaire maker strategy in consumer application.
LED Market Trends - General Lighting
STATUS OF THE LED INDUSTRY
• General lighting will drive LED demand.
• Strong penetration in outdoor and architectural lighting.
• Accelerating penetration in residential lighting.
• Better prospects than initially expected for LED as replacement of fluorescent tubes.
• Better prospects than expected in industrial lighting.
• Socket saturation won’t occur as fast as initially anticipated!
• Models usually assumed that because of the long lifetime of LEDs, the market will saturate once the majority of the light sockets havebeen converted… BUT:
• Actual lifetime is not as long as initially anticipated: 20,000-25,000 hours (or less) rather than 50,000 to 100,000 hours (initially quoted bythe industry).
• Smart lighting will trigger obsolescence in some markets.
• The availability of efficient, cheap and versatile light sources (LED) will increase the average consumption of artificial light per capita.
Photo credit: Nasa
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Overall utilization rate stands at 74% in Q3-2016 after Epistar decreased its capacity.
GaN MOCVD Capacity Supply vs. Demand Trends
LED EPITAXY CAPACITY TRENDS
Highlights:
Wafer consumption dropped significantly in Q3- and Q4-2015 but recovered rapidly in the first half of 2016 and reached record high inearly Q3. We expect demand to show some seasonal weakness in Q4 as LED makers adjust their inventory but not at the scaleexperienced in 2015.
Capacity increase over the last 12 months reflects mostly process efficiency improvement and new reactor procurement at San’an.However, not all reactors have been started yet
LED Reactor End Demand vs. Capacity
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More and more packaged LED manufacturers moving to module level!
Vertical Integration - Module Level
RECENT TRENDS IN THE PACKAGED LED INDUSTRY
• Packaged LED manufacturers master LED binning strategy which represent a strong competitive advantage for LED lighting moduleassembly.
• Process manufacturing variability creates multiple binning of LED parameters: Color control / Flux control /VF control.
• Good binning strategy helps to select the LEDs for:
• Reaching the product specification.
• Guarantying the supportability.
• Minimizing the stocks.
• Control of LED production allows to stabilize value at module level using variable LEDs.
LED
Full Proliferation
Color, flux and voltage
specification
Substrate
(size, material, connectivity version…)
ASSEMBLY LED LINE FOR LED MODULE
Binning
Tables
Pick &
PlaceReflow Control LED Module
Source: LED Module Report - Yole Développement©2016 | www.yole.fr | LED Packaging 2017: Market, Technology and Industry Landscape | Sample
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Most of the COB LED manufacturers are located in Asia.
Industry - Overview of Suppliers
COB LED
US:
Cree, Bridgelux, Lumileds (…)
+ 3 other players detailled in
the report
Russia:
XX
South Korea:
Seoul Semi., LG Innotek (…)
+ 6 other players detailled in the report
China:
Honglitronic, APT, CETC Huaying Electronics (…)
+ 17 other players detailled in the report
Germany:
Osram
Japan:
Sharp, Nichia, (…)
+ 4 other players
detailled in the report
Taiwan:
Edison Opto, Lextar,
Everlight (…)
+ 14 other players
detailled in the report
Finland:
XX
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While a dedicated supply chain has emerged, sapphire filaments are often produced from rejected LED wafers.
Manufacturing Process (1/2)
LED FILAMENT
• The filament substrates typical dimension is: 30 (L) * 0.8 (W) * 0.4 to 0.8 (thickness) mm.
• They were initially cut with wire saws from 2” sapphire wafers (in many cases, reject from production for LED substrates).
• As demand increased, a dedicated supply chain emerged: many suppliers now start from a rectangular brick which is then sliced intoindividual window blanks before double side polishing. Laser cutting has replaced diamond wire saws.
• The filaments are then assembled onto a lead frame to facilitate subsequent processing for the manufacturing of the COB-typefilament (silver electrode metallization, die attach, interconnect, phosphor coating…).
Sapphire filament substrates
Picture: Zhejiang Terios New Energy
Finished and assembled LED filaments
Picture: Tevaja
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Compared to MESA and vertical structures, Flip Chip LED can offer advantages toward reliability and lifetime, luminous output, package size and manufacturing cost.
Benefits (1/2)
FLIP CHIP LED
• Flip Chip (FC) LED manufacturing process use (in most case) a gold-tin eutectic direct bonding method where the chip is “stuck” onto the package substrate.
• Such structure of package allow for several features compared to MESA and vertical LEDs which have some unavoidabledisadvantages, such as faulty wire weld, surge strike, insufficient resistance to high current, bond wire breakage caused by the thermalexpansion and contraction of packaging silicone, yield affected by bond wire in manufacturing process (…).
No Wire Bonding
Reduce LEDs damage risk1
Increase light emitting area
Reduce package size
Low Sheet Resistance
/ Low Driving Current Allow for better thermal dissipation
Low Thermal
ResistanceAllows for high electrical currents
Flip Chip
LED
-
Direct
Bumping
or Eutectic
Bonding
Increase of reliability
and lifetime
Increase of luminosity
(with increased
operating efficiency)
Potential increase of
lm/W and lm/$
Decrease of package
size and allow for new
package structure
1. As gold wire can break during LED manufacturing process, under LED operation with huge temperature differences (…).
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• Nichia has developed a CSP architecture to enable light output only on top of the LED contrary to other LED manufacturers.
• It allow to place the LEDs close to each other on the PCB because there is no side emission of the light and therefore no mutual absorption of light.
• Gap between LED can be reduced to 0.2mm compared to 1mm for conventional CSP LEDs.
• Following Nichia statement, there is no color shifting contrary to other CSP LEDs.
Differences in CSP Architectures / Packages
CSP LED
Difference between Nichia and conventional CSP architecture
Source: Nichia
• Seoul Semiconductor has developed its own CSP architecture that is simpler than conventional CSPdesign since there is no ceramic substrate.
• WICOP (Wafer Level Integrated Chip on PCB) is designed to directly connect the chip to the PCB as thereis no intermediate substrate.
• As the LED chip is directly connected onto the PCB, hence its thermal dissipation channel is especiallyshort, and has low thermal resistance. As a result, the driving current is double that of the average LEDpackage.
• Even if there are some differences between CSP LED manufacturers in the architecture of the “package”,all CSP LEDs have no need for main parts such as package or wire bonding.
Difference between Seoul
Semiconductor CSP and conventional
CSP architecture
Source: Seoul Semiconductor
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LED Packaging Process Flow
OVERVIEW OF LED PACKAGING
Epiwafer
Carrier wafer
Epitaxial
substrate
Die
Lens
Carrier wafer
MESA
&
Vertical
Flip
Chip
LEGEND
Only for vertical LED
packaging
Can be “mixed” with
interconnection for Flip
Chip LED packaging
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For both GaAs-based and Sapphire-based LEDs, wafer bonding enables improved thermal, electrical and/or optical properties.
Introduction (2/2)
WAFER BONDING
• In such designs (i.e.:VTF and TFFC LEDs), Sapphire is replaced by another carrier that offers higher thermal conductivity:
• Silicon-based LEDs involve also the transfer to a silicon carrier (i.e.: bonding step) and removal of the original Siliconsubstrate. Indeed, unlike Sapphire which is transparent, Silicon re-absorbs most of the light emitted toward the substrate.This significantly decreases the efficiency of the LED. The most common solution to the problem is to use a vertical LED structure:
• Regarding GaN-based LEDs (i.e.: GaN-on-GaN LEDs), no wafer bonding process is required.
Epitaxy Substrate
LED Epitaxial Layers
1. LED epiwafer
Bonding Layer
Bonding Layer
Carrier substrate
Epitaxy Substrate
LED Epitaxial Layers
Bonding Layer
Carrier substrate
LED Epitaxial Layers Bonding layer
Carrier substrate
LED Epitaxial Layers
4. VTF LED structure
Bonding Layer
n-contact pad
Epitaxy Substrate
LED Epitaxial LayersBonding Layer
Bonding Layer
Carrier substrate
Epitaxy Substrate
LED Epitaxial Layers
Bonding Layer
Carrier substrate
LED Epitaxial Layers Bonding layer
Carrier substrate
LED Epitaxial Layers
Bonding Layer
n-contact padTypical process flow of Vertical
Thin Film (VTF) LED
manufacturing
n-GaN
p-GaN
Epitaxy Substrate (Si)
Mirror layer
Carrier substrate (Si)
n-GaN
p-GaN
Epitaxy Substrate (Si)
Mirror layer
n-GaN
p-GaN Active layers
Epitaxy
Substrate (Si)
Emitted light
Absorbed light
n-GaN
p-GaN
Mirror layer
Carrier substrate (Si)
1. LED-on-Si 2. Mirror layer deposition 3. Carrier substrate bonding 4. Substrate removal
Bonding and removal
process for LED-On-Si
2. Carrier substrate bonding 3. Substrate removal
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LLO is the most common substrate removal technique used for volume manufacturing. However, IP constraints, cost, performance limitations and damage caused to the epilayer provide incentive for the development of alternatives.
Other Techniques
SUBSTRATE REMOVAL
• We have identified 3 new techniques for substrate removal but current performance (development status) are not sufficient yet todirectly compete with LLO.
Technique Developer Comments
Chemical Mechanical
PlanarizationASTRI
• The process uses standard grinding and polishing combined with “polish stops”
structures made of hard material embedded into the structure to protect the
epi layers.
• Potentially, multiple wafers can be processed in batch.Also, there is less patent
issues than for LLO. And an increase of yield in terms of reverse current
specification can be achieved compared to LLO.
Electrochemical EtchingYale
University
• Substrate removal technique based on the creation of a nanoporous layer of
GaN using an electrochemical etcher. Further nitride layers are then grown. A
new substrate can then be applied to the top of the structure and the growth
substrate removed at the weakened nanoporous region.
Mechanical TransferNTT
• NTT has developed a technique for growing high-quality layered BN thin films
on sapphire substrates, and also growing high-quality GaN-based thin films on
BN. Since in this structure the cleavable BN plays the role of a release layer, one
can easily detach the GaN-based thin-film devices from the sapphire substrates
and transfer them to the other substrate.
More details on these Other Techniques
given in appendix
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Global Benchmark of Dicing Technologies (i.e.: Not LED-Centric) (1/2)
DIE SINGULATION
Blade Dicing Laser Ablation Stealth Dicing Plasma Dicing
Upfront cost $200k XX XX
Cost of
Ownership (CoO)Medium XX Medium XX
Technology type Chipping Chipping No chipping No chipping
Debris Dust XX Dust-free XX
Water XX Required No water / cleaning required XX
Die strength Low XX Medium XX
Production yield Dicing line limitation Not so good: Line limitation Low kerf loss better yield High productivity
Thermal effect on
the deviceHeat effect Heat effect Unaffected Heat-free
Wafer breakage Breakage strength Wafer breakage Superior breakage strength Chip strength: > 3,000 MPa
Main Advantages• Standard process suitable for thick
wafer (> 250µm)• XX
• Clean process
• XX
• XX
• High level device strength
• Independent of die size
• XX
• XX
Main Drawbacks
• Dirty process
• Crack propagation
• Increased damage for thinner wafers
and small die
• XX
• Lateral damage
• XX
• Scratch on the surface > 200 µm
• XX
• XX
• Heat propagation can damage the die
• Disruptive technology
• XX
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The diversity of LED structures, power levels, applications and process equipment considerations require different die attach solutions to optimize cost and performance aspects.
Die Attach Material vs. LED Package Power (and Applications)
DIE ATTACH
ApplicationThermal ConductivityDie Attach Material
LEGEND
LOW POWER SUPER HIGH POWERHIGH POWERMIDDLE POWER
XX
XXXX, XX, XX
LED Downlight
XX
Automotive Exterior Lighting (DRL, Tail, Signal)
Auto Head Lamp
T8 Tube Lamps
7 - XX W/mK
XX - XX W/mK > 200 W/mKXX - 200 W/mK
• XX
• XX
• Silver-Filled Epoxy
• XX
Pressure-Assisted Sintered
Ag
Pressureless Sintered Ag
XX
Perf
orm
an
ce (
Th
erm
al
an
d R
eliab
ilit
y)
0 - 0.3W > 4W1 - 4W0.3 - 1W
Source: Yole Développement / Alpha
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• White light from packaged LEDs is generated by combining blue photons from LED chips with photons of other colors from phosphor material(s).However, as phosphors are mostly produced as powders, LED manufacturers have to blend it the encapsulant to suspend the phosphor powderand allow for simple deposition onto the blue LED chip.
• Many encapsulating materials are available on the market with a wide variety of physical and performance characteristics. LED packagers evaluateperformance of such materials along optical, mechanical, chemical and thermal metrics (with some figures of merit bearing more importance tothe overall package performance than others).
• Additionally, they have to make sure that such material will have the best fit with the phosphor used.
• Below are presented key parameters to consider for encapsulant and potential associated interactions with phosphor materials.
Interactions Encapsulant / Phosphors - Overview
ENCAPSULATION / PRIMARY OPTICS
KEY PARAMETERS
OF
INTERACTIONS
BETWEEN
ENCAPSULANT
AND PHOPSHORS
OPTICAL PROPERTIES
MECHANICAL PROPERTIES
CHEMICAL COMPATIBILITY
THERMAL CONDUCTIVITY
CURING PROCESS
More details on Each Parameter of
Interactions in appendix
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Encapsulant material should represent a market volume of ~XX Metric Tons by 2021, mostly driven by Methyl Silicone (and Phenyl Silicone) materials.
EncapsulantVolume Forecast (2012-2021)
ENCAPSULATION / PRIMARY OPTICS
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Phosphor quantity can vary significantly from one type of package to another.
On-Chip Configuration - Overview
PHOSPHORS
• Downconverters are usually mixed with a binder (Silicone, Epoxy) and deposited on the device. Alternatively, they can be in a ceramicform or embedded into a solid-state binder that is paired with phosphor chips afterwards (e.g.: glass).The major types are:
Increasing phosphor packing density
Casting (Dispersion): XX
CREE Osram
Conformal Coating Package level:
Conformal Coating or Pre-Form – Chip only:
Philips LumiledsPicture: System Plus Consulting
Volume conversion On-Chip conversion
Cost efficient but:
• Particle segregation, binder viscosity hard to control.
• XX
• XX
For XX and XX power packages.
Better color uniformity & XX (especially withceramics) but more expensive.
2014: Mostly for XX packages.
2015+: Increased adoption in XX.
©2016 | www.yole.fr | LED Packaging 2017: Market, Technology and Industry Landscape | Sample
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Silicates were developed as an alternative to YAG and will lose ground as YAG IP falls into public domain.
Material / Compositions - Focus on Silicates
PHOSPHORS
• M2SiO4:Eu2+ (M=Ba, Sr, Ca) phosphors were originally studied in the 60’s.
• Compositions for LEDs silicate phosphors and the associated intellectual property has beenasserted by a group called the BOSE consortium, consisting of Tridonic, LeuchtstoffwerkBreitungen (LWB) and Litec (now part of Merck) all assignees on the fundamentalUS6809347 silicate patent. The consortium later added Toyoda Gosei which extended theclaims.
• The BOSE consortium later signed a cross licensing agreement with Intematix. Attempt bythe consortium to trademark the name BOSE for phosphors was denied after a complaintby electronic audio company Bose.
• Other companies like GE and Osram also own some IP on silicate phosphors for LEDs.
• Compositions have been developed to cover the green and red portions of the spectra,from 500 to more than 610 nm. However, thermal quenching and chemical instability areoften issues for the most extreme wavelength.
• Significant progress has been made on those aspects. Various types of coating have beenused to improve stability and performance have improved on a continuous basis.Performance of the best silicates are now approaching those of Yellow/Green YAGphosphors. However, those higher performance silicates come at a cost premium.
• Yellow silicates are being quickly displaced by YAG. Green silicates remain used in displayapplications. Orange silicates offer a cheaper alternative to some nitride for mid power LEDwhere photon flux and operating temperature are not too high.
Companies constituting the BOSE consortium
or having cross licensing agreement on silicates
©2016 | www.yole.fr | LED Packaging 2017: Market, Technology and Industry Landscape | Sample
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TERMS AND CONDITIONS OF SALES
33
FIELDS OF EXPERTISE
Yole Développement’s 30 analysts operate in the following areas
MEMS & Sensors
LED
Compound
Semi.
Imaging
Photonics
MedTech
Manufacturing
Advanced
Packaging
Batteries / Energy
Management
Power
Electronics
Displays
RF
Devices &
Techno.
©2016 | www.yole.fr | About Yole Développement
34
4 BUSINESS MODELS
o Consulting and Analysis
• Market data & research, marketing analysis
• Technology analysis
• Strategy consulting
• Reverse engineering & costing
• Patent analysis
www.yole.fr
o Reports
• Market & Technology reports
• Patent Investigation and patent infringement risk analysis
• Teardowns & Reverse Costing Analysis
• Cost Simulation Tool
www.i-Micronews.com/reports
o Financial services
• M&A (buying and selling)
• Due diligence
• Fundraising
• Maturation of companies
• IP portfolio management & optimization
www.yolefinance.com
www.bmorpho.com
o Media
• i-Micronews.com website
• @Micronews e-newsletter
• Communication & webcast services
• Events
www.i-Micronews.com
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35
A GROUP OF COMPANIES
Market,
technology and
strategy
consulting
www.yole.fr
M&A operations
Due diligences
www.yolefinance.com
Innovation and business maker
www.bmorpho.com
Manufacturing costs analysis
Teardown and reverse engineering
Cost simulation tools
www.systemplus.fr
IP analysis
Patent assessment
www.knowmade.fr
©2016 | www.yole.fr | About Yole Développement
36
OUR 2016 REPORTS PLANNING (1/2)
MARKET AND TECHNOLOGY REPORTS
by Yole Développement
o MEMS & SENSORS
− Gas Sensor Technology and Market 2016
− Status of the MEMS Industry 2016
− Sensors for Cellphones and Tablets 2016
− Inkjet Printhead Market & Technology Trends 2016
− Sensors for Biometry and Recognition 2016
− Finger Print Sensors Market and Technologies 2016
− Silicon Photonics 2016
− Emerging Non Volatile Memories 2016
o IMAGING & OPTOELECTRONICS
− Status of the CMOS Image Sensor Industry 2016
− Uncooled Infrared Imaging Technology & Market Trends 2016
− Imaging Technologies for Automotive 2016
− Sensors for Drones & Robots: Market Opportunities and Technology
Evolution 2016
− Silicon Photonics 2016
o MEDTECH
− BioMEMS: Microsystems for Healthcare Applications 2016
− Point of Need Testing 2016: Application of Microfluidic Technologies
o ADVANCED PACKAGING
− Fan-Out WLP: Technology Trends and Business Update 2016
− Embedded Die Packaging: Technologies and Markets Trends 2016
− 2.5D & 3D IC Business Update 2016
− Status and Prospects for the Advanced Packaging Industry in China 2016
− Fan-in Wafer Level Packaging: Market and Technology Trends 2016
o MANUFACTURING
− Equipment and Materials for Fan Out Technology (Wafer vs Panel)**
− Equipment and Materials for 3D T(X)V Technology**
− Thinning & Dicing Equipment for Advanced Packaging, MEMS, Photovoltaics,
LED, CMOS 2016
**To be confirmed
©2016 | www.yole.fr | About Yole Développement
37
OUR 2016 REPORTS PLANNING (2/2)
o COMPOUND SEMICONDUCTORS
− Power SiC 2016: Materials, Devices, Modules, and Applications
− GaN Modules, Devices and Substrates for Power Electronics 2016
− Sapphire Applications & Market 2016: from LED to Consumer Electronics
− GaN RF Devices Market: Applications, Players, Technology, and Substrates
2016 – 2022
− RF components and modules for cellphones 2016**
o LED
− Sapphire Applications and Market 2016: From LED to Consumer Electronics
− Thermal Management for LED and Power 2016
− LED Packaging 2016
− Microdisplays and MicroLEDs 2016**
− UV LEDs - Technology, Manufacturing and Application Trends
− OLED for Lighting - Technology, Industry and Market Trends 2016
− Automotive Lighting: Technologies, Industry and Market Trends 2016
o POWER ELECTRONICS
− Power Electronics for EV/HEV 2016: Market, Innovations and Trends
− Status of Power Electronics Industry 2016
− Passive Components Technologies and Market Trends for Power Electronics
2016
− Power SiC 2016: Materials, Devices, Modules, and Applications
− GaN Modules, Devices and Substrates for Power Electronics 2016
− Inverter Technologies Trends & Market Expectations 2016
− Opportunities for Power Electronics in Renewable Electricity Generation
2016
− Thermal Management for LED and Power 2016
− GaN RF Devices Market: Applications, Players, Technology, and Substrates
2016 - 2022
o BATTERY
− Stationary Storage and Automotive Li-ion Battery Packs
− Beyond Li-ion Batteries: Present and Future Li-ion Technology Challengers
PATENT ANALYSIS by Knowmadeo Patent Infringement (crossed analysis based on Knowmade and System Plus
Analysis expertise)
o Patent Investigation (crossed analysis based on Knowmade & Yole Développement
expertise)
o Patent Landscape
TEARDOWN & REVERSE COSTING by System Plus
ConsultingMore than 30 teardowns and reverse costing analysis and cost simulation tools to be
published in 2016.
©2016 | www.yole.fr | About Yole Développement
38
OUR 2015 PUBLISHED REPORTS LIST
o MEMS & SENSORS
− Sensors and Data Management for Autonomous Vehicles
− Sensors for Wearable Electronics And Mobile Healthcare
− Status of the MEMS Industry
− Uncooled Infrared Imaging Technology & Market Trends
− Infrared Detector Technology & Market Trends
− High-End Gyroscopes, Accelerometers and IMUs for Defense, Aerospace &
Industrial
− Emerging Non Volatile Memory (NVM) Technology & Market Trends
o IMAGING & OPTOELECTRONICS
− Camera Module Industry
− Uncooled Infrared Imaging Technology & Market Trends
− Status of the CMOS Image Sensors
− Infrared Detector Technology & Market Trends
o MEDTECH
− Sample Preparation Automation Through Emerging Microfluidic Technologies
− 2015 Microfluidic Applications in the Pharmaceutical, Life Sciences, In-Vitro
Diagnostic, and Medical Device Markets
− Sensors for Wearable Electronics And Mobile Healthcare
o COMPOUND SEMICONDUCTORS
− Sapphire Applications & Market 2015: from LED to Consumer Electronics
− SiC, GaN, and other Wide Band Gap (WBG) materials for power electronics
applications
− GaN and SiC Devices for Power Electronics Applications
o LED
− LED Lighting Module Technology, Industry and Market Trends 2015
− UV LED - Technology, Manufacturing and Application Trends
− Phosphors & Quantum Dots 2015: LED Downconverters for Lighting & Displays
− Sapphire Applications & Market 2015: from LED to Consumer Electronics
o POWER ELECTRONICS
− Power Packaging Technology Trends and Market Expectations
− Energy Management for Smart Grid, Cities and Buildings: Opportunities for Battery
Electricity Storage Solutions
− Status of Chinese Power Electronics Industry
− New Technologies and Architectures for Efficient Data Center
− IGBT Market and Technology Trends
− Status of Power Electronics Industry
− SiC, GaN, and other Wide Band Gap (WBG) materials for power electronics
applications
− GaN and SiC Devices for Power Electronics Applications
o ADVANCED PACKAGING
− Status of the Advanced Packaging Industry
− Supply Chain Readiness for Panel Manufacturing in Packaging
− Fan-in Wafer Level Packaging: Market and Technology Trends
− Flip Chip: Technologies and Markets Trends
− Fan-Out and Embedded Die: Technologies & Market Trends
o MANUFACTURING
− Photolithography Equipment and Materials for Advanced Packaging, MEMS and
LED Applications
− Emerging Non Volatile Memory (NVM) Technology & Market Trends
©2016 | www.yole.fr | About Yole Développement
39
CONTACT INFORMATION
Follow us on
• Consulting and Specific Analysis
• North America: Steve LaFerriere, Director of Northern America Business DevelopmentEmail: [email protected]
• Japan & Asia: Takashi Onozawa, Representative Director, Yole KKEmail: [email protected]
• RoW: Jean-Christophe Eloy, CEO & President, Yole DéveloppementEmail [email protected]
• Report business
• North America: Steve LaFerriere, Director of Northern America Business DevelopmentEmail: [email protected]
• Europe: Lizzie Levenez, EMEA Business Development ManagerEmail: [email protected]
• Japan & Asia: Takashi Onozawa, Representative Director, Yole KK.Email: [email protected]
• Greater China: Mavis Wang, Business Development DirectorEmail: [email protected]
• Financial services
• Jean-Christophe Eloy, CEO & PresidentEmail: [email protected]
• General
• Email: [email protected]
©2016 | www.yole.fr | About Yole Développement