LED設備•·晶應用-LED設備說明.pdf · Sapphire (藍寶石)的主要成份為氧化鋁(Al 2...
Transcript of LED設備•·晶應用-LED設備說明.pdf · Sapphire (藍寶石)的主要成份為氧化鋁(Al 2...
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LED TO CHANCE
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Sapphire ( )
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Sapphire () (Al2O3) ,, , ,
(LED)
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LED
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GaP/GaP LPE 565 700
GaAsP/GaP VPE 630 650
AlGaAs/GaAs LPE 660
ZnCdSe MBE 565
I nGaAlP/GaAs MOCVD 570 645
I nGaAlP/GaP
I nGaAlP/Sapphire
I nGaAlP/Silicon
I nGaN/Sapphire MOCVD 430 525
()I nGaN/Silicon
I nGaN/SiC
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LED
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LED
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SiC
MES/SPC
MES/SPC
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KY
CZ
MES /SPC
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SPC
MES
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Al2O3
:
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30KY
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30KY
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1 2
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60KY
,
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SEMC-RC150
Ingot 2~6Ingot(): 250mm
5 KW
, V 220/110()
, Hz 50/60
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MES/200MES
INVOICE
INVOICE
INVOICE
INVOICE
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MES/200MES
ERP
ERP
ERP
MES
MES
MES
MES
MES
MES
MES
MES
FQC
MES
MES
ERP
ERP
PullingInspMountDrillingCutting
GrindingFlattingInsp FQC Packing
MES
Ingot NO Shipping NO
Shipping Lebel
:Al2O3
Crystal NO
R/M No
25~30kg / 1Run
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200MES
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200MESProject Schedule
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200MES Document Management
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30
MES
SPC
60~80
HEM
CZ
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30,
HEM
101
182
18,3
25
5
4
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105
106
107
58
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KYCZ
HEM
Process
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CZ V.S. KY
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(mm)
(kg)
MPa
cm-2
4040 3.0 100 150 >105
450500 200 1.0 105
Kyocera
Namiki
30050 11 30 105SapphireTech.
100 103 105CrystalSys./GT
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- II
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-Rocking Curve
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-Rocking Curve
Rocking Curve
-CZ :4.4 5.8sec () -KY3.6 3.8sec-HEM:5.5 11.7sec
Rocking CurveKYRocking CurveCZ
-KY EPD: 100102-2-CZ EPD 0.91.2105 -2
EPDKYEPDCZ
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Kyropulos Method (KY)
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CZ Method
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KY V.S. CZ
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Kyropulos Method--- Cz Method---
High quality()
Poor quality
()
Low Cost ()
High cost()
Hard to study mass production()
Poor quality
()
For larger crystal growth ()
Hard to control the orientationwell()
Low Growth Speed()
High growth speed()
KY V.S. CZ
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KY CZ
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CZ vs KYGrowth Method CZ KY
Boule size 4, useable length 200mm
30KG
Growth Axis A A
Crucible Ir Mo/W
Hot zone ZrO2 Mo
Heating High Frequency Including Heating
Resistive Heating
Cycle time 7.2 days 10 days
Max. output per month (2) 1120mm 2100mm
Crucible Cost (CZ) 360000 15000
Crucible repair cycle time(Ir)/ Crucible Life time(W) 1.5 2.5
Crucible Repair Cost(CZ) 33000 0
Crucible Repair Cost(CZ)/ Crucible Cost (KY) 22000 6000
Machine Cost (include hot zone/ exclude Crucible ) 450000 250000
EM wave Serious Very small
Power consumption 45kw 42kw
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Sapphire for 2 Substrate
LED
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Turnkey solution provider
Sales
Support
Application
Support
Service
Support
After LED RD line set up:
1. 2. 3. 4. 5. SOP6.
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1~6 6~12 12~
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move-in
(trouble-shooting)
SOP
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SOP
()
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2 inch wafer Spec.
: 1st Yield:85%;Total Yield:95%
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2 inch PSS wafer Spec.
:1st Yield:60%;Total Yield:90%
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Sapphire for 2Substrate
Sapphire () in LED industry
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Pattern Sapphire Substrate (PSS)Dry Etch(DPSS)Wet Etch (WPSS)
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()
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HMDS
ICP
PR-
Strip
PR-
Strip
+ D P S S ; ~ 5 0 K
+ W P S S , ; ~ 5 0 K
SiO2
Annea-
ling+
HMDS
BOE-
Strip
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Sapphire Process Introduction
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Diamondwire slicing
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Double Side Lapping + B4C F240 (GC JIS240)Upper wheel balancing unit
Both plate cooling system
4 Independent Drives
Machine Features on points
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Step 1 B4C Double side lapping process
Step 2
Resin Special Copper + diamond slurry process
Step 3
Special Metal Tin + diamond slurry process
Step 4-5 Rough & Fine CMP process
Template or Wax bonding
OR
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Double Side Polish Process
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Double Side Polish
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Bow/Wrap result
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-Bow/Warp result
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Single Side Diamond Lapping Machine
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Single Side Diamond Lapping Machine
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CMP Machine
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Cost Analyze for 2 sapphire wafer (100K)
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Polish wafer
RD Line : 1.2
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Polish wafer
100K :2
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DPSS
DPSS50K :1.5~2
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PSS
WPSS50K :1.2~1.5
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2 inch wafer
Price and Profit by 2011 Q4
2011 Q4 Sapphire 2 inch wafer (USD)
2 inch ingot by 1 mm $8
2 inch Polished Wafer $13-15
2 inch PSS Wafer $23-25
waferUSD3
USD23
PSS wafer
USD5USD56
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Note:2 inch Polish wafer :NTD200,000,000/29 =USD 6,896,5512 inch PSS wafer :NTD150,000,000/ 29=USD 5,172,414
LED sapphire wafer